ROHM SST6838 Technical data

SST6838

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Transistors

NPN general purpose transistor

SST6838

zFeatures zExternal dimensions (Unit : mm)

1) BV

CEO

minimum is 40V (IC = 1mA)

2) Complements the SST6839.

zPackage, marking and packaging specifications

Part No. SST6838

Pacaging type

Marking

Code

Basic ordering unit (pieces)

SST3

RBR
T116
3000

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

CBO

V
V

CEO

V

EBO

I

P

Tj

Tstg

C

C

Limits

50
40

0.2

0.2 W

150

−55 to +150

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance

CBO

BV
BV

CEO

I

CBO

I

EBO

CE(sat)

V

FE1

FE2

f

T

Cob

Cib − 17 − pF

−

50

−

40

−

−

−

−

−

−

−

−

−−0.4 IC/IB=50mA/5mA

−−0.5 V IC/IB=10mA/0.2mA

−−0.7 I

200 −−

− 800 −

− V

− V

150 −−−

50−180

2

Rev.A 1/3

5

SST6838

ROHM : SST3

−

−

0.5
5

0.5
5

−

3.5

2.9

1.9

0.95

(1)

V
V

µA

µA

MHzpFV

±

0.2

±

0.2

0.95

(2)

(3)

All terminals have
the same dimensions

0.4

+0.1

−

0.05

0.2

0.2

±

−0.1

+

1.3

2.4

Unit

V
V
V
A

°C
°C

I

C

=10µA

I

C

=1mA
VCB=30V
V

CB

V

EB

V

EB

C/IB

V

CE/IC
CE/IC
CE/IC

V

CE/IC

CE

V

CB

V

EB

=0.5V , f=1MHz

=30V
=4V
=4V

=10mA/0.2mA

=5V/1mA
=5V/1mAh
=5V/1mA− 1000

=5V/10mAh
=12V , IC=2mA , f=100MHz
=12V , f=1MHz

0.15

+0.1

−

0.95

0.06

0.45

+0.2

−

0.1

±

0.1

0~0.1

0.2Min.

(1) Emitter
(2) Base
(3) Collector

°C

(Ta= −40

(Ta= −40

to +125

(Ta=85

(Ta=125

(Ta=85

(Ta=125

(Ta=25
(Ta=85

(Ta=125

°C to

(Ta=85

(Ta=125

°C to

(Ta=25
(Ta=25
(Ta=25

+25

+25

(Ta= −40
(Ta= −40°C to +125

°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C

Transistors

n

.0

)

0

)

0

F

)

0

)

0

)

0

0

zElectrical characteristic curves

50

20

(mA)

C

10

5

2
1

0.5

COLLECTOR CURRENT : I

0.2

0.1
0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

BASE TO EMITTER VOLTAGE : V

25°C

100°C

−55°C

=

Ta

Fig.1 Grounded emitter propagatio

characteristics

500

Ta=25°C

V

CE

=6V

BE

(V)

100

Ta=25°C

80

(mA)

C

60

40

20

COLLECTOR CURRENT : I

0

0

0.4 0.8 1.2 1.6 2

COLLECTOR TO EMITTER VOLTAGE : V

Fig.2 Grounded emitter output

characteristics ( Ι )

500

0.50mA

0.45mA

0.40mA

0.35mA

0.30mA

0.25mA

0.20mA

0.15mA

0.10mA

0.05mA

IB=0A

CE

10

(mA)

C

COLLECTOR CURRENT : I

(V

COLLECTOR TO EMITTER VOLTAGE : V

0.5

(V

SST6838

Ta=25°C

8

6

4

2

0

0

4 8 12 16

Fig.3 Grounded emitter output

characteristics ( ΙΙ )

30µA
27µA
24µA
21µA

18µA
15µA

12µA

9µA
6µA

3µA

IB=0A

Ta=25°C

2

CE

(V

FE

200

100

50

DC CURRENT GAIN : h

20

10

0.2

0.5 1 2 5 10 20 50 100 200

COLLECTOR CURRENT : I

Fig.4 DC current gain vs.

collector current ( Ι )

VCE=5V

3V
1V

C

(mA)

FE

DC CURRENT GAIN : h

Ta=100°C

200

100

50

20

10

0.2 0.5 1 2 5 10 20 50 100 20

25°C

−55°C

COLLECTOR CURRENT : I

C

(mA)

VCE=

5V

Fig.5 DC current gain vs.

collector current ( ΙΙ )

0.2
IC/IB=50

0.1

0.05

0.02

0.01

COLLECTOR SATURATION VOLTAGE : VCE(sat)

0.2

0.5 1 2 5 10 20 50 100 20
COLLECTOR CURRENT : I

20
10

C

(mA)

ig. 6 Collector-emitter saturation

voltage vs. collector current

0.5

(V

0.2

Ta=100°C

0.1

0.05

0.02

0.01

COLLECTOR SATURATION VOLTAGE : VCE(sat)

0.2

Fig.7 Collector-emitter saturation

25°C

−55°C

0.5 1 2 5 10 20 50 100 20
COLLECTOR CURRENT : I

voltage vs. collector current ( Ι )

C

(mA)

IC/IB=10

0.5

(V

CE(sat)

0.2

0.1

0.05

0.02

0.01

COLLECTOR SATURATION VOLTAGE : V

Ta=100°C

25°C

−55°C

0.5 1 2 5 10 20 50 10

0.2
COLLECTOR CURRENT : I

C (mA)

Fig.8 Collector-emitter saturation

voltage vs. collector current (ΙΙ)

IC/IB=50

Ta=25°C

V

E

CE

(mA)

500

(MHz)

T

200

100

TRANSITION FREQUENCY : f

50

−0.5 −1 −2 −5 −10 −20 −50 −10

EMITTER CURRENT : I

Fig.9 Gain bandwidth product vs.

emitter current

=6V

Rev.A 2/3

Transistors

0

s)

.

20

pF)

pF)

10

5

SST6838

Ta=25°C
f=32MH
VCB=6V

Z

Cib

Ta=25°C

f=1MHz

I

E

=0A

I

C

=0A

(p

bb'

200

100

50

2

EMITTER INPUT CAPACITANCE : Cib (

1

COLLECTOR OUTPUT CAPACITANCE : Cob (

0.2 0.5 1 2 5 10 20 50

COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V

Cob

CB

(V)

EB

(V)

Fig.10 Collector output capacitance vs

collector-base voltage
Emitter input capacitance vs.
emitter-base voltage

20

10

−0.2 −0.5 −1 −2 −5 −1

BASE COLLECTOR TIME CONSTANT : Cc·r

EMITTER CURRENT : I

Fig.11 Base-collector time constant

vs. emitter current

E

(mA)

Rev.A 3/3

Appendix

No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

Notes

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1