ROHM SST6838 Technical data
SST6838
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Transistors
NPN general purpose transistor
SST6838
zFeatures zExternal dimensions (Unit : mm)
1) BV
CEO
minimum is 40V (IC = 1mA)
2) Complements the SST6839.
zPackage, marking and packaging specifications
Part No. SST6838
Pacaging type
Marking
Code
Basic ordering unit (pieces)
SST3
RBR
T116
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
CBO
V
V
CEO
V
EBO
I
P
Tj
Tstg
C
C
Limits
50
40
0.2
0.2 W
150
−55 to +150
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
CBO
BV
BV
CEO
I
CBO
I
EBO
CE(sat)
V
FE1
FE2
f
T
Cob
Cib − 17 − pF
−
50
−
40
−
−
−
−
−
−
−
−
−−0.4 IC/IB=50mA/5mA
−−0.5 V IC/IB=10mA/0.2mA
−−0.7 I
200 −−
− 800 −
− V
− V
150 −−−
50−180
2
Rev.A 1/3
5
SST6838
ROHM : SST3
−
−
0.5
5
0.5
5
−
3.5
2.9
1.9
0.95
(1)
V
V
µA
µA
MHzpFV
±
0.2
±
0.2
0.95
(2)
(3)
All terminals have
the same dimensions
0.4
+0.1
−
0.05
0.2
0.2
±
−0.1
+
1.3
2.4
Unit
V
V
V
A
°C
°C
I
C
=10µA
I
C
=1mA
VCB=30V
V
CB
V
EB
V
EB
C/IB
V
CE/IC
CE/IC
CE/IC
V
CE/IC
CE
V
CB
V
EB
=0.5V , f=1MHz
=30V
=4V
=4V
=10mA/0.2mA
=5V/1mA
=5V/1mAh
=5V/1mA− 1000
=5V/10mAh
=12V , IC=2mA , f=100MHz
=12V , f=1MHz
0.15
+0.1
−
0.95
0.06
0.45
+0.2
−
0.1
±
0.1
0~0.1
0.2Min.
(1) Emitter
(2) Base
(3) Collector
°C
(Ta= −40
(Ta= −40
to +125
(Ta=85
(Ta=125
(Ta=85
(Ta=125
(Ta=25
(Ta=85
(Ta=125
°C to
(Ta=85
(Ta=125
°C to
(Ta=25
(Ta=25
(Ta=25
+25
+25
(Ta= −40
(Ta= −40°C to +125
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
Transistors
n
.0
)
0
)
0
F
)
0
)
0
)
0
0
zElectrical characteristic curves
50
20
(mA)
C
10
5
2
1
0.5
COLLECTOR CURRENT : I
0.2
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
25°C
100°C
−55°C
=
Ta
Fig.1 Grounded emitter propagatio
characteristics
500
Ta=25°C
V
CE
=6V
BE
(V)
100
Ta=25°C
80
(mA)
C
60
40
20
COLLECTOR CURRENT : I
0
0
0.4 0.8 1.2 1.6 2
COLLECTOR TO EMITTER VOLTAGE : V
Fig.2 Grounded emitter output
characteristics ( Ι )
500
0.50mA
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
IB=0A
CE
10
(mA)
C
COLLECTOR CURRENT : I
(V
COLLECTOR TO EMITTER VOLTAGE : V
0.5
(V
SST6838
Ta=25°C
8
6
4
2
0
0
4 8 12 16
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
30µA
27µA
24µA
21µA
18µA
15µA
12µA
9µA
6µA
3µA
IB=0A
Ta=25°C
2
CE
(V
FE
200
100
50
DC CURRENT GAIN : h
20
10
0.2
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
Fig.4 DC current gain vs.
collector current ( Ι )
VCE=5V
3V
1V
C
(mA)
FE
DC CURRENT GAIN : h
Ta=100°C
200
100
50
20
10
0.2 0.5 1 2 5 10 20 50 100 20
25°C
−55°C
COLLECTOR CURRENT : I
C
(mA)
VCE=
5V
Fig.5 DC current gain vs.
collector current ( ΙΙ )
0.2
IC/IB=50
0.1
0.05
0.02
0.01
COLLECTOR SATURATION VOLTAGE : VCE(sat)
0.2
0.5 1 2 5 10 20 50 100 20
COLLECTOR CURRENT : I
20
10
C
(mA)
ig. 6 Collector-emitter saturation
voltage vs. collector current
0.5
(V
0.2
Ta=100°C
0.1
0.05
0.02
0.01
COLLECTOR SATURATION VOLTAGE : VCE(sat)
0.2
Fig.7 Collector-emitter saturation
25°C
−55°C
0.5 1 2 5 10 20 50 100 20
COLLECTOR CURRENT : I
voltage vs. collector current ( Ι )
C
(mA)
IC/IB=10
0.5
(V
CE(sat)
0.2
0.1
0.05
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
Ta=100°C
25°C
−55°C
0.5 1 2 5 10 20 50 10
0.2
COLLECTOR CURRENT : I
C (mA)
Fig.8 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
IC/IB=50
Ta=25°C
V
E
CE
(mA)
500
(MHz)
T
200
100
TRANSITION FREQUENCY : f
50
−0.5 −1 −2 −5 −10 −20 −50 −10
EMITTER CURRENT : I
Fig.9 Gain bandwidth product vs.
emitter current
=6V
Rev.A 2/3
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