ROHM SST4403 Schematic [ru]

SST4403 / MMST4403

Transistors

PNP Medium Power Transistor
(Switching)

SST4403 / MMST4403

zFeatu res

1) BVCEO = −40V (Min.) ; at IC= −1mA

2) Complements the SST4401 / MMST4401

zPackage, marking, and p ackaging specifications

Part No.

Packaging type

Marking

Code

Basic ordering unit (pieces)

SST4403

SST3

R2T
T116
3000

MMST4403

SMT3

R2T
T146
3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector power
dissipation

Junction temperature
Storage temperature

∗

+

Mounted on a 7 5 0.6mm CERAMIC SUBSTRATE

+

Symbol

CBO

V
V

CEO

V

EBO

I

P

Tj

Tstg

C

C

Limits

−40

−40

−6

−0.6

0.2

0.35
150

−55 to +150

Unit

V
V
V
A

W

W

˚C
˚C

zElectrical characteristics (T a=25°C)

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

DC current transfer ratio h

Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time

Parameter

Symbol Min. Typ. Max. Unit Conditions

CBO

BV
BV
BV

I

CBO

I

EBO

CE(sat)

BE(sat)

f

Cob

Cib

tstg

T

td

tr

tf

−

CEO
EBO

FE

40

−

40

−

5

−

−

−−−

−−−

−

0.75

−−−

30

60
100
100

20
200

−

−−

−−

−−

−−

−−

−

−

−

−

−

−−

−−

−−

−−−

−

−−

−

−

zDimensions (Unit : mm)

SST4403

ROHM : SST3

MMST4403

ROHM : SMT3
EIAJ : SC-59

V

−

−

−

−

0.1

−

0.1

0.4

0.75 IC/I

0.95

1.3

300

−

8.5
30 pF
15 ns
20 ns

225 ns

30 ns

µA
µA

MHz

pF

C

=

−

100µA

I

V

I

C

=

−

1mA

V

I

E

=

−

100µA

V

CB

=

−

35V

V

EB

=

−

5V

IC/I

B

=

−

B

=

C/IB

=

I
I

C/IB

=

V

CE

=

−

V

CE

=

−

CE

=

−

V
V

CE

=

−

V

CE

=

−

CE

=

−

V
V

CB

=

−

EB

=

−

V

CC

=

−

V
V

CC

=

−

V

CC

=

−

V

CC

=

−

150mA/

−

500mA/

−

150mA/

−

500mA/
1V, I
1V, I
1V, I
1V, I
2V, I
10V, I
10V, f=100kHz

0.5V, f=100kHz
30V, V
30V, V
30V, I
30V, I

V

V

−

15mA

−

50mA

−

15mA

−

50mA

C

=

−

0.1mA

C

=

−

1mA

C

=

−

10mA

C

=

−

150mA

C

=

−

500mA

E

=

20mA, f=100MHz

EB(OFF)

=

−

EB(OFF)

=

−

C

=

−

150mA, I

C

=

−

150mA, I

2V, I
2V, I

B1
B1

C

=

C

=
=
=

−

150mA, I

−

150mA, I

−

I

B2

−

I

B2

=
=

−

15mA

−

15mA

(1) Emitter
(2) Base
(3) Collector

(1) Emitter
(2) Base
(3) Collector

B1

=

−

15mA

B1

=

−

15mA

Rev.C 1/3

Transistors

zElectrical characteristic curves

100

Ta=25˚C

(mA)

C

50

COLLECTOR CURRENT : I

0

COLLECTOR-EMITTER VOLTAGE : V

Fig.1 Grounded emitter output

1.8

(V)

1.6

BE (sat)

1.4

1.2

1.0

0.8

0.6

0.4

0.2
0

1.0 10 100 1000

BASE-EMITTER SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

Fig.2 Base-emitter saturation

voltage vs. collector current

1000

FE

600

500

400

300

200

100

1B=0µA

5

characteristics

CE

Ta=25˚C

C

/ IB=10

I

C

(mA)

100

(V)

SST4403 / MMST4403

1000

FE

100

DC CURRENT GAIN : h

10

0.1 101.0 100 1000
COLLECTOR CURRENT : IC (mA)

Fig.3 DC current gain vs. collector current ( I )

1000

FE

100

DC CURRENT GAIN : h

10

0.1 101.0 100 1000

Ta=125˚C

Ta=25˚C

Ta= −55˚C

COLLECTOR CURRENT : IC (mA)

Fig.4 DC current gain vs. collector current ( II )

Ta=25˚C
V
f=1kHz

CE

=10V

(V)

0.3

CE (sat)

VCE=10V

1V

Ta=25˚C

VCE=10V

Ta=25˚C

C / IB

I

=10

100

AC CURRENT GAIN : h

10

0.1 101.0 100 1000

COLLECTOR CURRENT : IC (mA)

Fig.5 AC current gain vs. collector current

0.2

0.1

COLLECTOR-EMITTER

SATURATION VOLTAGE : V

0

1.0 10 100 1000
COLLECTOR CURRENT : IC (

Fig.6 Collector-emitter saturation

mA)

voltage vs. collector current

Rev.C 2/3