ROHM SST4401, MMST4401 Technical data

SST4401 / MMST4401

Transistors

NPN Medium Power Transistor
(Switching)

SST4401 / MMST4401

zFeatu res

1) BVCEO>40V (IC=1mA)

2) Complements the SST4403 / MMST4403.

zPackage, marking, and p ackaging specifications

Part No.

Packaging type

Marking

Code

Basic ordering unit (pieces)

SST4401

SST3

R2X
T116
3000

MMST4401

SMT3

R2X
T146
3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector power dissipation

Junction temperature
Storage temperature

Mounted on a 7 5 0.6mm CERAMIC SUBSTRATE

∗

+

+

Symbol

CBO

V
V

CEO

V

EBO

I

C

P

Tj

Tstg

Limits

60
40

6

0.6

C

0.2

0.35
150

−

55 to +150

Unit

zElectrical characteristics (T a=25°C)

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current transfer ratio

Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time

Parameter

Symbol Min. Typ. Max.

BV
BV
BV

V

V

I

CBO

I

EBO

CE(sat)

BE(sat)

h

f

Cob

Cib

td

tstg

CBO
CEO
EBO

FE

T

tr

tf

60
40

6

−

−

−−

−−

−−

−−

20
40
80

100

40

250

−

−−

−−

−−

−−

−−

V
V
V
A

W

W

˚C
˚C

−

−

−

−

−

−−

−−

−−

−

−−

−

−

zDimensions (Unit : mm)

SST4401

ROHM : SST3

MMST4401

ROHM : SMT3
EIAJ : SC-59

Unit

C

=

100µA

µA
µA

MHz

pF
pF
ns
ns
ns

V
V
V

V

V

−

I

C

=

1mA

I
I

E

=

100µA

CB

=

35V

V
V

EB

=

5V

I

C/IB

=

150mA/15mA

B

=

500mA/50mA

C/IB

=

150mA/15mA

I
I

C/IB

=

500mA/50mA

V

CE

=

1V, I

CE

=

1V, I

V
V

CE

=

1V, I

V

CE

=

1V, I

V

CE

=

2V, I

CE

=

10V, I

V

CB

=

10V, f=100kHz

V

EB

=

0.5V, f=100kHz

V

CC

=

30V, V

V
V

CC

=

30V, V

V

CC

=

30V, I

V

CC

=

30V, I

−

−

−

0.1

0.1

0.4

0.75 IC/I

0.95

1.2

300

−

6.5
30
15
20

225

30 ns

C

=

0.1mA

C

=

1mA

C

=

10mA

C

=

150mA

C

=

500mA

E

=

−

20mA, f=100MHz

EB(OFF)

=

EB(OFF)

=

C

=

150mA, I

C

=

150mA, I

2V, I
2V, I

B1
B1

Conditions

C

=

150mA, I

C

=

150mA, I

=-

I

B2

=

=-

I

B2

=

15mA
15mA

(1) Emitter
(2) Base
(3) Collector

(1) Emitter
(2) Base
(3) Collector

B1

=

15mA

B1

=

15mA

Rev.B 1/3

Transistors

zElectrical characteristic curves

100

Ta=25°C

600

500

1000

FE

SST4401 / MMST4401

Ta

=25°C

400

50

COLLECTOR CURRENT : Ic(mA)

0

COLLECTOR-EMITTER VOLTAGE : V

300

200

100

IB=0µA

5

100

CE

(V)

Fig.1 Grounded emitter output
characteristics

(V)

CE(sat)

0.3

0.2

0.1

0

1.0 10 100 1000

COLLECTOR EMITTER SATURATION VOLTAGE : V

COLLECTOR CURRENT : Ic(mA)

Fig.2 Collector-emitter saturation
voltage vs. collector current

Ta=25°C

C

/ IB=10

I

1000

FE

100

DC CURRENT GAIN : h

10

0.1 101.0 100 1000
COLLECTOR CURRENT : Ic(mA)

Fig.3 DC current gain vs. collector current(Ι)

1000

FE

100

DC CURRENT GAIN : h

10

0.1 101.0 100 1000

Ta

=125°C

25

°C

−55

°C

COLLECTOR CURRENT : Ic(mA)

Fig.4 DC current gain vs. collector current(ΙΙ)

Ta
V

=

f

=25°C

CE

1kHz

(V)

1.8

BE(sat)

=

10V

1.6

1.2

Ta=25°C
IC / I

V

CE

=

10V

1V

V

CE

=

10V

B

=10

100

AC CURRENT GAIN : h

10

0.1 101.0 100 1000

COLLECTOR CURRENT : Ic(mA)

Fig.5 AC current gain vs. collector current

0.8

0.4

0

BASE EMITTER SATURATION VOLTAGE : V

1.0 10 100 1000
COLLECTOR CURRENT : Ic

(mA)

Fig.6 Base-emitter saturation
voltage vs. collector current

Rev.B 2/3