ROHM UMT3906, SST3906, MMST3906 Technical data

UMT3906/SST3906/MMST3906

Transistors

PNP General Purpose Transistor

UMT3906 / SST3906 / MMST3906

zFeatures

>

1) BV

−40V (IC= −1mA)

CEO

2) Complements the T3904/SST3904/MMST3909.

3) Low capacitance.

zPackage, marking, and p ackaging specifications

Basic ordering unit (pieces)

Type UMT3906

Packaging type

Marking

Code

UMT3

R2A
T106
3000

SST3906

SST3

R2A
T116
3000

MMST3906

SMT3

R2A
T146
3000

zAbsolute maximum ratings (Ta=25°C)

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector Power
dissipation

Junction temperature
Storage temperature

When mounted on a 7 5 0.6mm ceramic board.

∗

Parameter

UMT3906
SST3906,MMST3906

SST3906,MMST3906

+

+

Symbol

CBO

V
V

CEO

V

EBO

O

I

Pd

Tj

Tstg

−55

Limits

−40

−40

−5

−0.2

6.2

0.35
150

to

+150

zElectrical characteristics (T a=25°C)

Collector-base breakdown voltage

Parameter

Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current transfer ratio

Transition frequency
Collector output capacitance

Emitter input capacitance
Delay time
Rise time
Storage tiem
Fall time

Symbol

BV

CBO

BV

CEO

BV

EBO

CES

I
I

EBO

V

CE(sat)

V

BE(sat)

h

FE

f

T

Cob

Cib

td

tr

tstg

tf

Min. Max.Typ.

−40

−40

−5

−

−

−

−

−0.65

−

60
80

100 300

60
30

250

−

−

−

−

−

−

Unit

V
V
V

A
W
W

°C
°C

−

−

−

−

−

−50

−

−50

−

−

−0.25

−

−0.4

−0.85

−

−

−0.95

−

−

−

−

−−

−

−

−

−

−

−

4.5

−

10

−

35

−

35

−

225

−

75

−

zDimensions (Unit : mm)

UMT3906

ROHM : UMT3
EIAJ : SC-70

SST3906

ROHM : SST3

MMST3906

ROHM : SMT3
EIAJ : SC-59

∗

Unit Conditions

V

C

V

V
nA
nA

V

V

MHz

pF
pF
ns
ns
ns
ns

= −10µA

I

C

= −1mA

I

E

= −10µA

I

CB

= −30V

V

EB

= −3V

V

C/IB

= −10mA/ −1mA

I
I

C/IB

= −50mA/ −5mA

I

C/IB

= −10mA/ −1mA

I

C/IB

= −50mA/ −5mA

V

CE

= −1V, IC= −0.1mA

CE

= −1V, IC= −1mA

V

CE

= −1V, IC= −10mA

V
V

CE

= −1V, IC= −50mA

CE

= −1V, IC= −100mA

V

CE

= −20V, IE=10mA, f=100MHz

V
V

CB

= −10V, f=100kHz, IE=0A

V

CB

= −0.5V, f=100kHz, IC=0A

CC

= −3V, V

V

CC

= −3V, V

V
V

CC

= −3V, IC= −10mA, IB1= −IB2= −1mA

CC

= −3V, IC= −10mA, IB1= −IB2= −1mA

V

−

BE(OFF)

= −0.5V,IC= −10mA, IB1= −1mA

BE(OFF)

= −0.5V,IC= −10mA, IB1= −1mA

(1) Emitter
(2) Base
(3) Collector

(1) Emitter
(2) Base
(3) Collector

(1) Emitter
(2) Base
(3) Collector

Rev.B 1/4

Transistors

zElectrical characteristics curves

10

Ta=25

°C

50

45

IB=0µA

10

40
35

30

25

20
15

10

5

V)

mA)

8

6

4

2

-COLLECTOR CURRENT (

C

I

0

VCE-COLLECTOR-EMITTER VOLTAGE (

Fig.1 Grounded emitter output

characteristics

500

200

UMT3906/SST3906/MMST3906

V)

0.3

0.2

0.1

0

VCE(sat)COLLECTOR EMITTER SATURATION VOLTAGE (

0.1 1.0 10 100
IC EMITTER COLLECTOR CURRENT (

Fig.2 Collector-emitter saturation

voltage vs. collector current

Ta=25

I

C / IB

=10

Ta=25

°C

mA)

°C

100

-DC CURRENT GAIN

FE

h

10

5

0.1 101.0 100 1000
IC-COLLECTOR CURRENT (

mA)

VCE=5V

3V

1V

Fig.3 DC current gain vs.collector current ( Ι )

500

Ta=125

°C

Ta=25

100

-DC CURRENT GAIN

FE

h

10

5

0.1 101.0 100 1000

°C

Ta= −55

°C

IC-COLLECTOR CURRENT (

mA)

VCE=5V

Fig.4 DC current gain vs. collector current ( ΙΙ )

Rev.B 2/4