ROHM UMT2907A, SST2907A, MMST2907A Technical data

UMT2907A / SST2907A / MMST2907A

Transistors

PNP Medium Power Transistor
(Switching)

UMT2907A / SST2907A / MMST2907A

zFeatu res

1) BVCEO< -60V (IC=-10mA)

2) Complements the UMT2222A / SST2222A /
MMST2222A.

zPackage, marking and packaging specifications

Part No.

Packaging type

Marking

Code

Basic ordering unit

(pieces)

UMT2907A

UMT3

R2F

T106
3000

SST2907A

SST3

R2F

T116

3000

MMST2907A

SMT3

R2F

T146
3000

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector power
dissipation

Junction temperature
Storage temperature

∗

Mounted on a 7 x 5 x 0.6mm ceramic substrate.

UMT2907A,
SST2907A,
MMST2907A

SST2907A

V
V
V

Tstg

Limits

CBO
CEO
EBO

I

C

P

C

Tj

−60

−60

−5

−0.6

0.2 W

0.35
150

−55 to +150

Unit

V
V
V
A

W

°C
°C

zElectrical characteristics (T a=25°C)

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage

Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current transfer ratio

Transition frequency
Collector output capacitance
Emitter input capacitance
Turn-on time
Delay time
Rise time
Turn-off time
Storage time
Fall time

Parameter Symbol Min. Typ. Max. Unit Conditions

CBO

BV
BV

CEO

BV

EBO

I

CBO

I

CES

I

EBO

CE(sat)

V

V

BE(sat)

FE

h

T

f

Cob

Cib − 30 pF
ton − 50 ns

td − 10 ns

tr − 40 ns
toff − 100 ns
tstg − 80 ns

tf

−

−60

−

−60

−

−5

−

−

−

−

−

−

−

−

75
100
100
100

50
200

−

−

−

−

−

−

−

−−30 ns

−100

−−100 VCB= −30V

−

−100

−−0.4

−−1.6 I

−−1.3

−−2.6

−− V

−−

−−−

− 300

−− V

−−−

∗

−

−

−

8

zDimensions (Unit : mm)

UMT2907A

ROHM : UMT3
EIAJ : SC-70

SST2907A

ROHM : SST3

MMST2907A

ROHM : SMT3
EIAJ : SC-59

I

V

C

= −10µA

V

I

C

= −10mA

E

= −10µA

V

I

CB

= −50V

V

nA
nA

EB

= −3V

V
IC/IB= −150mA/ −15mA

V

C/IB

= −500mA/ −50mA

I

C/IB

= −150mA/ −15mA

V

I

C/IB

= −500mA/ −50mA

CE

= −10V, IC= −0.1mA

CE

= −10V, IC= −1mA

V

CE

= −10V, IC= −10mA

V

CE

= −10V, IC= −150mA

V

CE

= −10V, IC= −500mA

MHzpFV

CE

= −20V, IE=50mA, f=100MHz

CB

= −10V, f=100kHz

V

EB

= −2V, f=100kHz

V

CC

= −30V, V

V

CC

V

CC

V

CC

V

CC

V

CC

V

BE(OFF)

= −30V, V

BE(OFF)

= −30V, V

BE(OFF)

= −30V, IC= −150mA, IB1=IB2= −15mA
= −30V , IC= −150mA, IB1=IB2= −15mA
= −30V, IC= −150mA, IB1=IB2= −15mA

= −1.5V, IC= −150mA, IB1= −15mA
= −1.5V, IC= −150mA, IB1= −15mA
= −1.5V, IC=− 150mA, IB1= −15mA

(1) Emitter
(2) Base
(3) Collector

(1) Emitter
(2) Base
(3) Collector

(1) Emitter
(2) Base
(3) Collector

Rev.B 1/4

UMT2907A / SST2907A / MMST2907A

Transistors

zElectrical characteristic curves

100

Ta=25˚C

(mA)

C

50

COLLECTOR CURRENT : I

0

COLLECTOR-EMITTER VOLTAGE : V

Fig.1 Grounded emitter output

1B=0µA

characteristics

1000

FE

5

600

500

400

300

200

100

100

CE

(V)

1.8

(V)

1.6

BE (sat)

1.4

1.2

1.0

0.8

0.6

0.4

0.2
0

1.0 10 100 1000

BASE-EMITTER SATURATION VOLTAGE : V

COLLECTOR CURRENT : IC (mA)

Ta=25˚C

C

I

Fig.2 Base-emitter saturation

voltage vs. collector current

Ta=25˚C

VCE=10V

/ IB=10

100

DC CURRENT GAIN : h

10

0.1 101.0 100 1000
COLLECTOR CURRENT : IC (mA)

1V

Fig.3 DC current gain vs. collector current ( I )

1000

FE

100

DC CURRENT GAIN : h

10

0.1 101.0 100 1000

Ta=125˚C

Ta=25˚C

Ta=−55˚C

COLLECTOR CURRENT : IC (mA)

Fig.4 DC current gain vs. collector current ( II )

VCE=10V

Rev.B 2/4