ROHM SST2222A Datasheet

UMT2222A / SST2222A / MMST2222A / PN2222A

Transistors

NPN Medium Power Transistor (Switching)

UMT2222A / SST2222A / MMST2222A / PN2222A

Features

!

1) BV

CEO

> 40V (I

C

=

10mA)

2) Complements the UMT2907A / SST2907A
/ MMST2907A / PN2907A.

Package, marking, and packaging specifications

!

Part No.

Packaging type

Marking

Code

Basic ordering unit

(pieces)

Absolute maximum ratings

!

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector power
dissipation

Junction temperature
Storage temperature

∗

When mounted on a 7 x 5 x 0.6 mm ceramic board

UMT2222A

UMT3

R1P

T106
3000

Parameter

UMT2222A,SST2222A,
MMST2222A

SST2222A
PN2222A

SST2222A

SST3

R1P

T116

3000

MMST2222A

SMT3

R1P

T146

PN2222A

TO-92

3000

(Ta = 25°C)

Symbol

Limits

V

CBO

V
V

Tstg

75

CEO

40

6

EBO

I

C

0.6

0.2

P

C

0.35

0.625
150

Tj

−

55

∼ +

T93

3000

−

150

Unit

External dimensions

!

UMT2222A

ROHM : UMT3
EIAJ : SC-70

SST2222A

ROHM : SST3

MMST2222A

ROHM : SMT3

V
V
V
A

W

∗

W
W

°C
°C

EIAJ : SC-59

PN2222A

ROHM : TO-92
EIAJ : SC-43

(Units : mm)

2.0±0.2

1.3±0.1

0.65 0.65
(2)(1)

(3)

0.3

All terminals have same dimensions

2.9±0.2

1.9±0.2

0.95

0.95
(2)

(1)

(3)

0.4

All terminals have same dimensions

2.9±0.2

1.9±0.2

0.95

0.95
(2)

(1)

(3)

0.4

All terminals have same dimensions

4.8±0.2

0.2

±

4.8

(12.7Min.)

(1)

(2) (3)

5

+

−0

+

−0.05

+

−0.05

2.5

0.1

0.1

0.1

2.5Min.

0.5

0.9±0.1

0.7±0.1

0.2

0.1

0.1

±

±

2.1

1.25

0.1

0.2

−

+

1.3

0.1

0.2

−

+

1.6

±

0.1

+0.3

−

0.1

0

∼

0.1

(1) Emitter

0.15±0.05

+

0.2

0.95

−0.1

0.45±0.1

0 ∼ 0.1

0.2

±

0.2Min.

2.4

+

0.1

0.15

−0.06

+

0.2

1.1

−0.1

0.8±0.1

0.2

±

2.8

0

+

0.1

0.15

−0.06

±

0.2

3.7

+0.15

0.45

2.3

−

0.05

(2) Base
(3) Collector

0.1 ∼ 0.4

(1) Emitter
(2) Base
(3) Collector

∼

0.1

(1) Emitter
(2) Base
(3) Collector

0.3 ∼ 0.6

(1) Emitter
(2) Base
(3) Collector

Electrical characteristics

!

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current transfer ratio

Transition frequency
Output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time

(Ta = 25°C)

CBO

BV
BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

BE(sat)

V

FE

h

T

f

Cob

Cib −−25 pF

td −−10 ns
tr −−25 ns

tstg −−225 ns

tf −−60 ns

−

75

−

40

−

6

−

−

−

−

−−0.3

−−1I

0.6 − 1.2

−−2

35 −− V
50 −−
75 −−
50 −−

100 − 300 V

40 −−

300−−−−8MHzpFV

−

−

−

100
100

nA
nA

V
V

V

V

−

C

=

10µA

I

C

=

10mA

I

E

=

10µA

V

CB

=

60V

V

EB

=

3V

IC/IB =

150mA/15mA

C/IB

=

500mA/50mA

C/IB

=

150mA/15mA

I

C/IB

=

500mA/50mA

I

CE

=

10V , IC =

V

CE

=

10V , IC =1

V

CE

=

10V , IC =

V

CE

=

1V , IC =

CE

=

10V , IC =

V

CE

=

10V , IC =

CE

=

20V , IC =−

CB

=

10V , f =100kHz

V
V

EB

=

0.5V , f =100kHz

V

CC

=

30V , V

V

CC

=

30V , V

V

CC

=

30V , IC =

V

CC

=

30V , IC =

0.1mA
mA

10mA

150mA

150mA
500mA

20mA, f =100MHz

BE(OFF)

=

0.5V , IC =

BE(OFF)

=

0.5V , IC =
150mA , I
150mA , I

150mA , I

B1

=

=

15mA

=

15mA

15mA

B1

=

15mA

150mA , I

B1

=−

I

B2

B1

=−

I

B2

I

V

Transistors

Electrical characteristic curves

!

100

(mA)

Ta=25°C

50

600

500

400

300

UMT2222A / SST2222A / MMST2222A / PN2222A

1000

FE

100

Ta

=25°C

V

CE

=

10V

200

COLLECTOR CURRENT : Ic

0

COLLECTOR-EMITTER VOLTAGE : V

100

IB=0µA

5

100

CE

(V)

Fig.1 Grounded emitter output
characteristics

(V)

CE(sat)

0.3

0.2

0.1

0

COLLECTOR EMITTER SATURATION VOLTAGE : V

1.0 10 100 1000
COLLECTOR CURRENT : Ic(mA)

Ta=25°C

C

I

/ IB=10

Fig.2 Collector-emitter saturation
voltage vs. collector current

DC CURRENT GAIN : h

10

0.1 101.0 100 1000
COLLECTOR CURRENT : Ic(mA)

Fig.3 DC current gain vs. collector current(Ι)

1000

FE

100

DC CURRENT GAIN : h

10

0.1 101.0 100 1000

Ta

=125°C

25

°C

−55

°C

COLLECTOR CURRENT : Ic(

mA)

Fig.4 DC current gain vs. collector current(ΙΙ)

1V

V

CE

=

10V

1000

FE

100

AC CURRENT GAIN : h

10

0.1 101.0 100 1000
COLLECTOR CURRENT : Ic(

mA)

Fig.5 AC current gain vs. collector current

Ta

=25°C

V

CE

=

10V

=

1kHz

f

(V)

1.8

BE(sat)

1.6

1.2

0.8

0.4

BASE EMITTER SATURATION VOLTAGE : V

0

1.0 10 100 1000

COLLECTOR CURRENT : Ic(mA)

Ta=25°C
IC / I

B

Fig.6 Base-emitter saturation
voltage vs. collector current

=10