ROHM SP8M3 Technical data
查询SP8M3供应商
SP8M3
Transistors
Switching
SP8M3
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zApplica tion
Power switching, DC / DC converter .
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 MOUNTED ON A CERAMIC BOARD.
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
Nchannel
30
20
±5.0
±20
1.6
20
−55 to +150
Limits
Pchannel
2
150
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
∗MOUNTED ON A CERAMIC BOARD.
Symbol Limits Unit
Rth (ch-a) 62.5
Rev.A 1/5
zExternal dimensions (Unit : mm)
SOP8
6.0±0.3
3.9±0.15
1.5±0.1
zEquivalent circuit
Unit
−30
−20
±4.5
±18
−1.6
−18
V
V
A
A
A
A
W
°C
°C
°C / W
∗1
∗1
∗2
∗2
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗
5.0±0.2
(
(
5
8
)
)
(
(
1
4
)
)
Max.1.75
0.4±0.1
1.27
0.1
0.15
Each lead has same dimensions
(8) (7)
∗2
∗1
(1) (2)
0.2±0.1
(6) (5)
∗1
(3) (4)
0.5±0.1
(8) (7) (6) (5)
(1) (2) (3) (4)
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
SP8M3
Transistors
N-ch
zElectrical characteristics (Ta=25°C)
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-Drain Characteristics) (T a=25°C)
Forward voltage
∗Pulsed
Rev.A 2/5
Parameter Symbol
I
GSS
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Parameter Symbol
V
SD
Min.
Typ. Max.
Unit
−−10 µAV
Conditions
=20V, VDS=0V
GS
30 −−VID=1mA, VGS=0V
−−1 µAVDS=30V, VGS=0V
1.0 − 2.5 V VDS=10V, ID=1mA
− 36 51 I
=5.0A, VGS=10V
D
− 52 73 mΩ ID=5.0A, VGS=4.5V
− 58 82 I
3.0 −−SI
=5.0A, VGS=4V
D
=5.0A, VDS=10V
D
− 230 − pF VDS=10V
− 8050− pF VGS=0V
−
−
−
−
−
−
−
−−nC ID=5.0A
Min. Typ. Max.
− pF f=1MHz
6
− ns
8
− ns
22
− ns
5
− ns
3.9
5.5 nC
1.1
− nC VGS=5V
1.4
ID=2.5A, VDD 15V
V
GS
R
=6.0Ω
L
R
G
V
DD
Unit
=10V
=10Ω
15V
Conditions
−−1.2 V IS=6.4A, VGS=0V
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
SP8M3
Transistors
P-ch
zElectrical characteristics (Ta=25°C)
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-Drain Characteristics) (T a=25°C)
Forward voltage
∗Pulsed
Rev.A 3/5
Parameter Symbol
I
GSS
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Parameter Symbol
V
SD
Min.
Typ. Max.
Unit
−−−10 µA
−30 −−V
−−−1 µA
−1.0 −−2.5 V
− 40 56
− 57 80 mΩ
− 65 90
3.5 −−S
− 850 − pF
− 190
−
−
−
−
−
−
−
−−nC
Min. Typ. Max.
120
10
25
60
25
8.5
2.5
3.0
− pF
− pF
− ns
− ns
− ns
− ns
− nC
− nC
Unit
VGS= −20V, VDS=0V
ID= −1mA, VGS=0V
V
V
I
D
I
D
I
D
I
D
V
V
f=1MHz
I
D
V
R
R
V
V
I
D
Conditions
=−30V, VGS=0V
DS
= −10V, ID= −1mA
DS
= −4.5A, VGS= −10V
= −2.5A, VGS= −4.5V
= −2.5A, VGS= −4.0V
= −2.5A, VDS= −10V
= −10V
DS
=0V
GS
= −2.5A, VDD −15V
= −10V
GS
=6.0Ω
L
=10Ω
G
−15V
DD
= −5V
GS
= −4.5A
Conditions
−−−1.2 V IS= −1.6A, VGS=0V
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
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