查询SP8M3供应商
SP8M3
Transistors
Switching
SP8M3
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zApplica tion
Power switching, DC / DC converter .
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 MOUNTED ON A CERAMIC BOARD.
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
Nchannel
30
20
±5.0
±20
1.6
20
−55 to +150
Limits
Pchannel
2
150
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
∗MOUNTED ON A CERAMIC BOARD.
Symbol Limits Unit
Rth (ch-a) 62.5
Rev.A 1/5
zExternal dimensions (Unit : mm)
SOP8
6.0±0.3
3.9±0.15
1.5±0.1
zEquivalent circuit
Unit
−30
−20
±4.5
±18
−1.6
−18
V
V
A
A
A
A
W
°C
°C
°C / W
∗1
∗1
∗2
∗2
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗
5.0±0.2
(
(
5
8
)
)
(
(
1
4
)
)
Max.1.75
0.4±0.1
1.27
0.1
0.15
Each lead has same dimensions
(8) (7)
∗2
∗1
(1) (2)
0.2±0.1
(6) (5)
∗1
(3) (4)
0.5±0.1
(8) (7) (6) (5)
(1) (2) (3) (4)
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
SP8M3
Transistors
N-ch
zElectrical characteristics (Ta=25°C)
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-Drain Characteristics) (T a=25°C)
Forward voltage
∗Pulsed
Rev.A 2/5
Parameter Symbol
I
GSS
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Parameter Symbol
V
SD
Min.
Typ. Max.
Unit
−−10 µAV
Conditions
=20V, VDS=0V
GS
30 −−VID=1mA, VGS=0V
−−1 µAVDS=30V, VGS=0V
1.0 − 2.5 V VDS=10V, ID=1mA
− 36 51 I
=5.0A, VGS=10V
D
− 52 73 mΩ ID=5.0A, VGS=4.5V
− 58 82 I
3.0 −−SI
=5.0A, VGS=4V
D
=5.0A, VDS=10V
D
− 230 − pF VDS=10V
− 8050− pF VGS=0V
−
−
−
−
−
−
−
−−nC ID=5.0A
Min. Typ. Max.
− pF f=1MHz
6
− ns
8
− ns
22
− ns
5
− ns
3.9
5.5 nC
1.1
− nC VGS=5V
1.4
ID=2.5A, VDD 15V
V
GS
R
=6.0Ω
L
R
G
V
DD
Unit
=10V
=10Ω
15V
Conditions
−−1.2 V IS=6.4A, VGS=0V
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
SP8M3
Transistors
P-ch
zElectrical characteristics (Ta=25°C)
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-Drain Characteristics) (T a=25°C)
Forward voltage
∗Pulsed
Rev.A 3/5
Parameter Symbol
I
GSS
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Parameter Symbol
V
SD
Min.
Typ. Max.
Unit
−−−10 µA
−30 −−V
−−−1 µA
−1.0 −−2.5 V
− 40 56
− 57 80 mΩ
− 65 90
3.5 −−S
− 850 − pF
− 190
−
−
−
−
−
−
−
−−nC
Min. Typ. Max.
120
10
25
60
25
8.5
2.5
3.0
− pF
− pF
− ns
− ns
− ns
− ns
− nC
− nC
Unit
VGS= −20V, VDS=0V
ID= −1mA, VGS=0V
V
V
I
D
I
D
I
D
I
D
V
V
f=1MHz
I
D
V
R
R
V
V
I
D
Conditions
=−30V, VGS=0V
DS
= −10V, ID= −1mA
DS
= −4.5A, VGS= −10V
= −2.5A, VGS= −4.5V
= −2.5A, VGS= −4.0V
= −2.5A, VDS= −10V
= −10V
DS
=0V
GS
= −2.5A, VDD −15V
= −10V
GS
=6.0Ω
L
=10Ω
G
−15V
DD
= −5V
GS
= −4.5A
Conditions
−−−1.2 V IS= −1.6A, VGS=0V
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Transistors
N-ch
zElectrical characteristic curves
1000
(pF)
100
CAPACITANCE : C
10
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V
Ta=25°C
f=1MHz
=0V
V
GS
DS
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10
1
(A)
Ta=125°C
D
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
VDS=10V
Pulsed
SP8M3
10000
1000
t
f
(ns)
C
iss
C
oss
C
rss
(V)
t
d (off)
100
t
r
10
SWITCHING TIME : t
t
d (on)
1
0.01 0.1 1 10
DRAIN CURRENT : I
Ta=25°C
V
DD
V
GS
=10Ω
R
G
Pulsed
(A)
D
=15V
=10V
Fig.2 Switching Characteristics
300
(mΩ)
250
DS (on)
R
200
150
ID=5A
ID=2.5A
Ta=25°C
Pulsed
10
Ta=25°C
9
=15V
V
DD
(V)
=5A
I
D
GS
8
=10Ω
R
G
Pulsed
7
6
5
4
3
2
1
GATE-SOURCE VOLTAGE : V
0
012345678
TOTAL GATE CHARGE : Qg (nC)
Fig.3
Dynamic Input Characteristics
10
Ta=125°C
Ta=75°C
(A)
s
Ta=25°C
Ta= −25°C
1
VGS=0V
Pulsed
0.01
DRAIN CURRENT : I
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE-SOURCE VOLTAGE : V
Fig.4
Typical Transfer Characteristics
100
50
0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
024681012141
(V)
GS
GATE-SOURCE VOLTAGE : V
(V)
GS
Fig.5 Static Drain-Source
On-State Resistance vs.
0.1
SOURCE CURRENT : I
0.01
6
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : V
(V)
SD
Fig.6 Source Current vs.
Source-Drain Voltage
Gate-Source Voltage
1000
Ta=125°C
(mΩ)
Ta=75°C
Ta=25°C
DS (on)
Ta= −25°C
R
100
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
1
0.1 1 10
DRAIN CURRENT : I
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
VGS=10V
Pulsed
(A)
D
1000
Ta=125°C
(mΩ)
Ta=75°C
Ta=25°C
DS (on)
Ta= −25°C
R
100
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
1
0.1 1 10
DRAIN CURRENT : I
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
VGS=4.5V
Pulsed
(A)
D
1000
STATIC DRAIN-SOURCE
Ta=125°C
(mΩ)
Ta=75°C
Ta=25°C
DS (on)
Ta= −25°C
R
100
10
ON-STATE RESISTANCE :
1
0.1 1 10
DRAIN CURRENT : I
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
D
VGS=4V
Pulsed
(A)
Rev.A 4/5
Transistors
P-ch
zElectrical characteristic curves
10000
(pF)
1000
100
Ta=25°C
f=1MHz
=0V
V
GS
CAPACITANCE : C
10
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : −V
DS
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10
(A)
D
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
VDS= −10V
Pulsed
SP8M3
10000
1000
(ns)
C
iss
C
oss
C
rss
(V)
t
f
t
d (off)
100
t
10
SWITCHING TIME : t
1
0.01 0.1 1 10
d (on)
t
r
DRAIN CURRENT : −I
Ta=25°C
= −15V
V
DD
= −10V
V
GS
=10Ω
R
G
Pulsed
(A)
D
Fig.2 Switching Characteristics
200
(mΩ)
DS (on)
150
R
100
ID=−4.5A
ID=−2.0A
Ta=25°C
Pulsed
8
(V)
7
GS
6
5
4
3
2
1
GATE-SOURCE VOLTAGE : −V
0
012345678910
TOTAL GATE CHARGE : Qg (nC)
Fig.3
Dynamic Input Characteristics
10
Ta=125°C
(A)
Ta=75°C
S
Ta=25°C
Ta= −25°C
1
Ta=25°C
= −15V
V
DD
= −4.5A
I
D
=10Ω
R
G
Pulsed
VGS=0V
Pulsed
0.01
DRAIN CURRENT : −I
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE-SOURCE VOLTAGE : −V
Fig.4
Typical Transfer Characteristics
1000
(mΩ)
DS (on)
R
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1 1 10
DRAIN CURRENT : −I
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
(V)
GS
VGS= −10V
Pulsed
(A)
D
50
0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
024681012141
GATE-SOURCE VOLTAGE : −V
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
1000
(mΩ)
DS (on)
R
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
10
0.1 1 10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
DRAIN CURRENT : −I
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
V
GS
Pulsed
(A)
D
0.1
SOURCE CURRENT : −I
0.01
6
(V)
GS
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : −V
(V)
SD
Fig.6 Source Current vs.
Source-Drain Voltage
1000
=
−
4.5V
(mΩ)
DS (on)
R
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1 1 10
DRAIN CURRENT : −I
D
V
=
GS
Pulsed
(A)
−
4V
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
Rev.A 5/5
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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