ROHM RUQ050N02 Technical data

C

1.5V Drive Nch MOSFET

RUQ050N02

Structure

Silicon N-channel MOSFET

Features

1) Low On-resistance.

2) Space saving, small surface mount package (TSMT6).

3) 1.5V drive

Applications

Switching

Packaging specifications

Package

Type

RUQ050N02

Code
Basic ordering unit (pieces)

Taping

TR

3000

Absolute maximum ratings (Ta=25C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Total power dissipation
Channel temperature
Range of storage temperature

∗1 Pw 10μs, Duty cycle 1%
∗2 Mounted on a ceramic board

Continuous

Pulsed

Continuous

Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

∗1

∗1
∗2

Limits Unit

20

±10

±5.0

±10

1.0
10

1.25
150

−55 to +150

Dimensions (Unit : mm)

TSMT6

Abbreviated symbol : XG

Inner circuit

(6)

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

VV
VV
AI
AI
AI

AI
WP
°CTch
°CTstg

(5)

∗2

(2)

Each lead has same dimensions

(4)

∗1

(1) Drain
(2) Drain
(3) Gate

(3)

(4) Source
(5) Drain
(6) Drain

Thermal resistance

Parameter

hannel to ambient

∗ Mounted on a ceramic board

Symbol Limits Unit

∗

100

°C/WRth(ch-a)

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2010.08 - Rev.A

Electrical characteristics (Ta=25C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

Body diode characteristics (Source-drain) (Ta=25C)

Parameter Symbol

∗Pulsed

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

V

SD

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

∗

Min.−Typ. Max.

−±10 μAVGS=±10V, VDS=0V

20 −−VID= 1mA, VGS=0V

−−1 μAV

0.3 − 1.0 V V

− 22 30 I

− 27 38 mΩ

− 32 45 mΩ ID= 2.5A, VGS= 1.8V

− 40 80 I

6.5 −−SV

− 900 − pF V

− 190

−

−

−

−

−

−

−

−−nC

− pF V

120

− pF f=1MHz

15

− ns

25

− ns

70

− ns

100

− ns

12

− nC

2.5

− nC

1.7

Min. Typ. Max.

−−1.2 V IS= 1.0A, VGS=0VForward voltage

Unit

mΩ

mΩ

Unit

D

I

D

D

V

ID= 2.5A
V
R
R

V
V
R

Conditions

= 20V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 5.0A, VGS= 4.5V
= 5.0A, VGS= 2.5V

= 1.0A, VGS= 1.5V

= 10V, ID= 5.0A

DS

= 10V

DS

=0V

GS

DD

10V

GS

= 4.5V

L

4Ω

G

=10Ω

10V,

DD
GS

L

2Ω, RG=10Ω

= 4.5V

I

= 5.0A

D

Conditions

Data Sheet RUQ050N02

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2010.08 - Rev.A

10000

0

CAPACITANCE : C (pF)

1000

0

SWITCHING TIME : t (ns)

Fig.2 Switching Characteristics

6

6

GATE-SOURCE VOLTAGE : V

(V)

Fig.3 Dynamic Input Characteristics

10

DRAIN CURRENT : I

(A)

Fig.4 Typical Transfer Characteristics

60

0

STATIC DRAIN-SOURCE

.

10

.5

SOURCE CURRENT : I

(A)

1000

0

STATIC DRAIN-SOURCE

1000

0

STATIC DRAIN-SOURCE

1000

0

STATIC DRAIN-SOURCE

Electrical characteristics curves

Ta=25°C
f=1MHz
V

GS

=0V

1000

100

10

0.01 0.1 1 10 10

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.1 Typical Capacitance

vs. Drain-Source Voltage

Ta=125°C
Ta=75°C

1

D

Ta=25°C
Ta=−25°C

Ciss

Coss
Crss

VDS=10V
Pulsed

100

10

(mΩ)

DS (on)

tf

td (off)

td (on)

tr

1

0.01

DRAIN CURRENT : ID (A)

ID=5.0A

40

ID=2.5A

Ta=25°C
V

DD

=10V

GS

=4.5V

V
R

G

=10Ω

0.1 1 1

Pulsed

Ta=25°C
Pulsed

Ta=25°C
V

DD

=10V

I

D

=5A

5

GS

R

G

=10Ω

Pulsed

4

3

2

1

0

0

TOTAL GATE CHARGE : Qg (nC)

Ta=125°C
Ta=75°C
Ta=25°C

S

Ta=−25°C

1

Data Sheet RUQ050N02

6124102 8 14 1

VGS=0V
Pulsed

0.1

0.01

0.001

0.2

0.4 0.8 1.20.6 1.0 1.4 1.6

GATE-SOURCE VOLTAGE : VGS (V)

(mΩ)

DS (on)

Ta=125°C
Ta=75°C

100

Ta=25°C
Ta=−25°C

10

ON-STATE RESISTANCE : R

0.01 0.1 1

DRAIN CURRENT : ID (A)

Fig.7 Static Drain-Source
On-State Resistance vs.
Drain current (Ι)

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20

ON-STATE RESISTANCE : R

0

0231

GATE-SOURCE VOLTAGE : VGS (V)

456 8971

Fig.5 Static Drain-Source

On-State Resistance vs

Gate-Source Voltage

0.1

0.01

0.0 0.5 1.0

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.6 Source Current vs.
Source-Drain Voltage

1

VGS=4.5V
Pulsed

1

(mΩ)

DS (on)

Ta=125°C
Ta=75°C
Ta=25°C

100

Ta=−25°C

10

ON-STATE RESISTANCE : R

0.01 0.1 1

DRAIN CURRENT : ID (A)

Fig.8 Static Drain-Source
On-State Resistance vs.
Drain current (ΙΙ)

VGS=2.5V
Pulsed

VGS=1.8V

(mΩ)

DS (on)

Ta=125°C
Ta=75°C
Ta=25°C

100

Ta=−25°C

10

1

ON-STATE RESISTANCE : R

0.01 0.1 1

DRAIN CURRENT : ID (A)

Fig.9 Static Drain-Source
On-State Resistance vs.
Drain current (ΙΙΙ)

Pulsed

2010.08 - Rev.A

1

1000

0

STATIC DRAIN-SOURCE

.

1000

0

STATIC DRAIN-SOURCE

.

100

0

FORWARD TRANSFER ADMITTANCE

e

F

it

V

I

Fig.14 Switching Waveforms

%

Pulse Width

V
V

F

it

V

S

I

Fig.16 Gate Charge Waveform

V

V

(mΩ)

DS (on)

100

Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C

VGS=1.5V
Pulsed

(mΩ)

DS (on)

100

VGS=1.5V
V

GS=1.8V

V

GS=2.5V
GS=4.5V

V

Ta=25°C
Pulsed

10

: Yfs (S)

1

Ta=−25°C
Ta=25°C
Ta=75°C
Ta=125°C

Data Sheet RUQ050N02

VDS=10V
Pulsed

10

ON-STATE RESISTANCE : R

0.01 0.1 1

DRAIN CURRENT : ID (A)

Fig.10 Static Drain-Source
On-State Resistance vs
Drain current (Ι )

Measurement circuit

10

1

GS

R

G

ON-STATE RESISTANCE : R

0.01 0.1 1

D

R

L

D.U.T.

V

DD

DRAIN CURRENT : ID (A)

Fig.11 Static Drain-Source
On-State Resistance vs
Drain current ( )

V

DS

ig.13 Switching Time Measurement Circu

I

G(Const.)

GS

R

G

D

D.U.T.

V

R

L

V

DD

D

GS
DS

t

d(on)

GS

1

50%

10%

10% 10

90% 90%

t

r

t

on

G

g

Q

Qgs Qgd

0.1

0.01 0.1 1

DRAIN CURRENT : ID (A)

Fig.12 Forward Transfer Admittanc
vs. Drain current

90%

50%

t

d(off)

t

f

t

off

1

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ig.15 Gate Charge Measurement Circu

Charge

2010.08 - Rev.A

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