ROHM RUQ050N02 Technical data

C

1.5V Drive Nch MOSFET

RUQ050N02

Structure

Silicon N-channel MOSFET

Features

1) Low On-resistance.

2) Space saving, small surface mount package (TSMT6).

3) 1.5V drive

Applications

Switching

Packaging specifications

Package

Type

RUQ050N02

Code
Basic ordering unit (pieces)

Taping

TR

3000

Absolute maximum ratings (Ta=25C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Total power dissipation
Channel temperature
Range of storage temperature

∗1 Pw 10μs, Duty cycle 1%
∗2 Mounted on a ceramic board

Continuous

Pulsed

Continuous

Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

∗1

∗1
∗2

Limits Unit

20

±10

±5.0

±10

1.0
10

1.25
150

−55 to +150

Dimensions (Unit : mm)

TSMT6

Abbreviated symbol : XG

Inner circuit

(6)

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

VV
VV
AI
AI
AI

AI
WP
°CTch
°CTstg

(5)

∗2

(2)

Each lead has same dimensions

(4)

∗1

(1) Drain
(2) Drain
(3) Gate

(3)

(4) Source
(5) Drain
(6) Drain

Thermal resistance

Parameter

hannel to ambient

∗ Mounted on a ceramic board

Symbol Limits Unit

∗

100

°C/WRth(ch-a)

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2010.08 - Rev.A

Electrical characteristics (Ta=25C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

Body diode characteristics (Source-drain) (Ta=25C)

Parameter Symbol

∗Pulsed

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

V

SD

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

∗

Min.−Typ. Max.

−±10 μAVGS=±10V, VDS=0V

20 −−VID= 1mA, VGS=0V

−−1 μAV

0.3 − 1.0 V V

− 22 30 I

− 27 38 mΩ

− 32 45 mΩ ID= 2.5A, VGS= 1.8V

− 40 80 I

6.5 −−SV

− 900 − pF V

− 190

−

−

−

−

−

−

−

−−nC

− pF V

120

− pF f=1MHz

15

− ns

25

− ns

70

− ns

100

− ns

12

− nC

2.5

− nC

1.7

Min. Typ. Max.

−−1.2 V IS= 1.0A, VGS=0VForward voltage

Unit

mΩ

mΩ

Unit

D

I

D

D

V

ID= 2.5A
V
R
R

V
V
R

Conditions

= 20V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 5.0A, VGS= 4.5V
= 5.0A, VGS= 2.5V

= 1.0A, VGS= 1.5V

= 10V, ID= 5.0A

DS

= 10V

DS

=0V

GS

DD

10V

GS

= 4.5V

L

4Ω

G

=10Ω

10V,

DD
GS

L

2Ω, RG=10Ω

= 4.5V

I

= 5.0A

D

Conditions

Data Sheet RUQ050N02

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2010 ROHM Co., Ltd. All rights reserved.

2010.08 - Rev.A