Page 1
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
www.ruichips.com
RU8205C6
N-Channel Advanced Power MOSFET
Features
Pin Description
Applications
Symbol
Parameter
Rating
Unit
Common Ratings (T
A
=25°C Unless Otherwise Noted)
V
DSS
Drain-Source Voltage
20
V
GSS
Gate-Source Voltage
±12
V
T
J
Maximum Junction Temperature
150
°C
T
STG
Storage Temperature Range
-55 to 150
°C
I
S
Diode Continuous Forward Current
TA=25°C
1.7
A
Mounted on Large Heat Sink
I
DP
300μs Pulse Drain Current Tested
TA=25°C
24
①
A
TA=25°C
6
I
D
Continuous Drain Current(VGS=4.5V)
TA=70°C
4.5
A
TA=25°C
1.25
P
D
Maximum Power Dissipation
TA=70°C
0.8
W
R
θJA
②
Thermal Resistance-Junction to Ambient
100
°C/W
• 20V/6A,
RDS (ON) =22mΩ (Typ.) @ VGS=4.5V
RDS (ON) =30mΩ (Typ.) @ VGS=2.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Available
• Power Management
Absolute Maximum Ratings
SOT-23-6
Dual N-Channel MOSFET
Page 2
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
2
www.ruichips.com
RU8205C6
Electrical Characteristics (T
A
=25°C Unless Otherwise Noted)
RU8205C6
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
VGS=0V, IDS=250µA
20
V
VDS=20V, VGS=0V
1
I
DSS
Zero Gate Voltage Drain Current
TJ=85°C
30
µA
V
GS(th)
Gate Threshold Voltage
VDS=VGS, IDS=250µA
0.5
0.7
1.5
V
I
GSS
Gate Leakage Current
VGS=±10V, VDS=0V
±100
nA
VGS=4.5V, IDS=6A
22
30
mΩ
R
DS(ON)
③
Drain-Source On-state Resistance
VGS=2.5V, IDS=5A
30
40
mΩ
Notes: Pulse width limited by safe operating area.
②When mounted on 1 inch square copper board, t ≤10sec.
③Pulse test ; Pulse width≤300µs, duty cycle≤2%.
④Guaranteed by design, not subject to production testing.
Diode Characteristics
V
SD
③
Diode Forward Voltage
ISD=1A, VGS=0V
1
V
Dynamic Characteristics
④
R
G
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
1.8
Ω
C
iss
Input Capacitance
580
C
oss
Output Capacitance
120
C
rss
Reverse Transfer Capacitance
VGS=0V,
VDS=10V,
Frequency=1.0MHz
95
pF
t
d(ON)
Turn-on Delay Time
5
t
r
Turn-on Rise Time
11
t
d(OFF)
Turn-off Delay Time
38
t
f
Turn-off Fall Time
VDD=10V, RL=1.7Ω,
IDS=6A, VGEN=4.5V,
RG=6Ω
13
ns
Gate Charge Characteristics
④
Q
g
Total Gate Charge
10
14
Q
gs
Gate-Source Charge
1.5
Q
gd
Gate-Drain Charge
VDS=16V, VGS=4.5V,
IDS=6A
3.4
nC
Page 3
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
3
www.ruichips.com
RU8205C6
Typical Characteristics
Power Dissipation
Drain Current
P
tot
-
Power
(W)
I
D
-
Drain Current (A)
Tj- Junction Temperature (°C)
Tj- Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
I
D
-
Drain Current (A)
Normalized Effective Transi
ent
VDS- Drain-Source Voltage (V)
Square Wave Pulse Duration (sec)
Page 4
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
4
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RU8205C6
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
I
D
-
Drain Current (A)
R
DS(ON)
-
On Resistance (
m
Ω)
VDS- Drain-Source Voltage (V)
ID- Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
R
DS(ON)
-
On
-
Resistance (m
)
Normalized Threshold Voltage
VGS- Gate-Source Voltage (V)
Tj- Junction Temperature (°C)
Page 5
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
5
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RU8205C6
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
Normalized On Resistance
I
S
-
Source Current (A)
Tj- Junction Temperature (°C)
VSD- Source-Drain Voltage (V)
Capacitance
Gate Charge
C
-
Capacitance (
pF
)
V
GS
-
Gate
-
Source Voltage (V)
VDS- Drain-Source Voltage (V)
QG- Gate Charge (nC)
Page 6
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
6
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RU8205C6
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Page 7
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
7
www.ruichips.com
RU8205C6
Ordering and Marking Information
Device
Marking
①
Package
Packaging
Quantity
Reel Size
Tape width
RU8205C6
4XYWW
SOT-23-6
Tape&Reel
3000
7’’
8mm
① The following characters could be different and means:
X =Assembly site code
Y =Year
WW =Work Week
Page 8
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
8
www.ruichips.com
RU8205C6
Package Information
SOT-23-6
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
MM
INCH
MM
INCH
SYMBOL
MIN
MAX
MIN
MAX
SYMBOL
MIN
MAX
MIN
MAX
A
1.050
1.250
0.041
0.049E1.500
1.700
0.059
0.067
A1
0.000
0.100
0.000
0.004E12.650
2.950
0.104
0.116
A2
1.050
1.150
0.041
0.045e0.950(BSC)
0.037(BSC)
b
0.300
0.500
0.012
0.020e11.800
2.000
0.071
0.079
c
0.100
0.200
0.004
0.008L0.300
0.600
0.012
0.024
D
2.820
3.020
0.111
0.119
θ0°8°0°8°
Page 9
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
9
www.ruichips.com
RU8205C6
Customer Service
Worldwide Sales and Service:
Technical Support:
Investor Relations Contacts:
Marcom Contact:
Editorial Contact:
HR Contact:
Legal Contact:
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
Page 10
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