ROHM RUL035N02 Technical data

RUL035N02

s

(

Transistors

1.5V Drive Nch MOSFET

RUL035N02

zStructure

Silicon N-channel MOSFET

zFeatures

1) Low On-resistance.

2) Space saving, small surface mount p ackage (TUMT6).

3) Low voltage drive (1.5V drive).

zApplications

Switching

zPackaging specifications

Package

Type

RUL035N02

Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Total power dissipation

Channel temperature
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

∗1

∗1
∗2

Limits Unit

20

±10

±3.5

±7

0.8
7

1.0

150

−55 to +150

zThermal resistance

Parameter

Channel to ambient

∗ Mounted on a ceramic board

Symbol Limits Unit

∗

125

zDimension

TUMT6

Unit : mm)

Abbreviated symbol : XD

zInner circuit

(6)

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

VV
VV
AI
AI
AI
AI

WP

°CTch
°CTstg

(5)

(2)

°C/WRth(ch-a)

0.2Max.

(4)

∗2

∗1

(1) Drain
(2) Drain
(3) Gate

(3)

(4) Source
(5) Drain
(6) Drain

Rev.A 1/4

Transistors

zElectrical characteristics (T a=25°C)

Parameter Symbol
Gate-source leakage

Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

Min.−Typ. Max.

−±10 µAVGS=±10V, VDS=0V

20 −−VID= 1mA, VGS=0V

−−1 µAV

0.3 − 1.0 V V

− 31 43 I

− 38 53 mΩ

− 50 70 I

3.2 −−SV

− 460 − pF V

− 11060− pF V

−

10

−

20

−

40

−

50

−

5.7

−

1.1

−

−−nC

0.9

Unit

= 20V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 3.5A, VGS= 4.5V

mΩ

D

= 3.5A, VGS= 2.5V

I

D

= 1.8A, VGS= 1.8V

mΩ

D

mΩ− 66 93 ID= 0.7A, VGS= 1.5V

= 10V, ID= 3.5A

DS

= 10V

DS

=0V

GS

− pF f=1MHz

V

− ns

− ns

− ns

− ns

− nC

− nC

DD

ID= 1.8A
V

GS

= 4.5V

R

L

5.6Ω

R

G

=10Ω

V

10V,

DD

= 4.5V

V

GS

L

=2.9Ω, RG=10Ω

R

10V

Conditions

I

= 3.5A

D

RUL035N02

Parameter Symbol

Min. Typ. Max.

V

SD

Unit

−−1.2 V IS= 0.8A, VGS=0VForward voltage

Conditions

Rev.A 2/4