RUL035N02
s
(
Transistors
1.5V Drive Nch MOSFET
RUL035N02
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount p ackage (TUMT6).
3) Low voltage drive (1.5V drive).
zApplications
Switching
zPackaging specifications
Package
Type
RUL035N02
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
D
∗1
∗1
∗2
Limits Unit
20
±10
±3.5
±7
0.8
7
1.0
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol Limits Unit
∗
125
zDimension
TUMT6
Unit : mm)
Abbreviated symbol : XD
zInner circuit
(6)
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
VV
VV
AI
AI
AI
AI
WP
°CTch
°CTstg
(5)
(2)
°C/WRth(ch-a)
0.2Max.
(4)
∗2
∗1
(1) Drain
(2) Drain
(3) Gate
(3)
(4) Source
(5) Drain
(6) Drain
Rev.A 1/4
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
I
GSS
I
DSS
GS (th)
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
g
∗
∗
Min.−Typ. Max.
−±10 µAVGS=±10V, VDS=0V
20 −−VID= 1mA, VGS=0V
−−1 µAV
0.3 − 1.0 V V
− 31 43 I
− 38 53 mΩ
− 50 70 I
3.2 −−SV
− 460 − pF V
− 11060− pF V
−
10
−
20
−
40
−
50
−
5.7
−
1.1
−
−−nC
0.9
Unit
= 20V, VGS=0V
DS
= 10V, ID= 1mA
DS
= 3.5A, VGS= 4.5V
mΩ
D
= 3.5A, VGS= 2.5V
I
D
= 1.8A, VGS= 1.8V
mΩ
D
mΩ− 66 93 ID= 0.7A, VGS= 1.5V
= 10V, ID= 3.5A
DS
= 10V
DS
=0V
GS
− pF f=1MHz
V
− ns
− ns
− ns
− ns
− nC
− nC
DD
ID= 1.8A
V
GS
= 4.5V
R
L
5.6Ω
R
G
=10Ω
V
10V,
DD
= 4.5V
V
GS
L
=2.9Ω, RG=10Ω
R
10V
Conditions
I
= 3.5A
D
RUL035N02
Parameter Symbol
Min. Typ. Max.
V
SD
Unit
−−1.2 V IS= 0.8A, VGS=0VForward voltage
Conditions
Rev.A 2/4
Transistors
zElectrical characteristics curves
10000
1000
100
CAPACITANCE : C (pF)
10
0.01
0.1 1 10
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10
VDS=10V
Pulsed
Ta=125°C
1
(A)
Ta=75°C
D
Ta=25°C
Ta=−25°C
0.1
0.01
DRAIN CURRENT : I
Ta=25°C
f=1MHz
GS=4.5V
V
Ciss
Coss
Crss
1000
100
10
SWITCHING TIME : t (ns)
1
100
0.01 10
100
(mΩ)
80
DS(on)
60
40
20
Ta=25°C
DD=10V
V
GS=4.5V
V
G=10Ω
t
f
t
d(off)
t
d(on)
t
r
0.1 1
R
Pulsed
DRAIN CURRENT : ID (A)
Fig.2 Switching Characteristics
Ta=25°C
ID=3.5A
ID=1.8A
Pulsed
RUL035N02
6
Ta=25°C
DD
=10V
V
(V)
5
D
=3.5A
I
GS
G
=10Ω
R
Pulsed
4
3
2
1
GATE-SOURCE VOLTAGE : V
0
13 62408
57
TOTAL GATE CHANGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
Ta=125°C
Ta=75°C
(A)
Ta=25°C
S
Ta=−25°C
1
0.1
SOURCE CURRENT : I
VGS=0V
Pulsed
0.001
0.2 0.4 0.6 0.8
1.21.0 1.4 1.6
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
17910
0
4
3
286
5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
0.01
0.50.0
SOURCE-DRAIN VOLTAGE : VSD (A)
Fig.6 Source-Current vs.
Source-Drain Voltage
1.0
Gate-Source Voltage
1000
(mΩ)
DS (on)
Ta=125°C
Ta=75°C
Ta=25°C
100
Ta=−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
10
0.01
0.1
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
VGS=4.5V
Pulsed
110
1000
(mΩ)
DS (on)
Ta=125°C
Ta=75°C
Ta=25°C
100
Ta=−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
10
0.01
0.1
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
VGS=2.5V
Pulsed
110
1000
(mΩ)
DS (on)
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
10
0.01
VGS=1.8V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
0.1
110
DRAIN CURRENT : ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
Rev.A 3/4
1.5
Transistors
1000
(mΩ)
Ta=125°C
DS (on)
Ta=75°C
Ta=25°C
Ta=−25°C
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
10
0.01
zMeasurement circuit
0.1
DRAIN CURRENT : ID (A)
Fig.10 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι )
RG
VGS=1.5V
Pulsed
110
VGS
1000
(mΩ)
DS (on)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
D
I
D.U.T.
VGS=1.5V
V
GS
=1.8V
V
GS
=2.5V
GS
=4.5V
V
100
10
0.01
RL
VDD
0.1
DRAIN CURRENT : ID (A)
Fig.11 Static Drain-Source
On-State Resistance
vs. Drain Current ( )
VDS
Ta=25°C
Pulsed
110
10
1
: Yfs (S)
FORWARD TRANSFER ADMITTANCE
0.1
0.01
Fig.12 Forward Transfer Admittance
vs. Drain Current
Pulse Width
50%
10%
GS
V
V
DS
10% 10%
90% 90%
t
d(on)
t
r
t
on
VDS=10V
Pulsed
0.1
DRAIN CURRENT : ID (A)
90%
50%
t
d(off)
t
off
RUL035N02
Ta=−25°C
Ta=25°C
Ta=75°C
Ta=125°C
110
t
f
Fig.13 Switching Time Measurement Circuit
Fig.14 Switching Waveforms
V
G
V
GS
I
G(Const.)
R
G
Fig.15 Gate Charge Measurement Circuit
D
I
D.U.T.
V
DS
R
L
V
DD
V
GS
Q
gsQgd
g
Q
Charge
Fig.16 Gate Charge Waveform
Rev.A 4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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whatsoever nature in the event of any such infringement, or arising from or connected with or related
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0
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