RUF025N02
Transistors
1.5V Drive Nch MOSFET
RUF025N02
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Space savin g, small surface mount package (TUMT3).
3) Low voltage drive (1.5V drive).
zApplications
Switching
zPackaging specifications
Package
Type
RUF025N02
Code
Basic ordering unit (pieces)
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
D
∗1
∗1
∗2
Limits Unit
20
±10
±2.5
±5
0.6
5
0.8
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol Limits Unit
∗
156
zDimensions (Unit : mm)
TUMT3
(1) Gate
(2) Source
(3) Drain
Abbreviated symbol : XE
zInner circuit
(3)
(1)
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
VV
VV
AI
AI
AI
AI
WP
°CTch
°CTstg
°C/WRth(ch-a)
0.2Max.
∗2
(1) Gate
(2) Source
(3) Drain
1/4
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗Pulsed
I
GSS
I
DSS
GS (th)
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
Q
gs
Q
gd
V
SD
∗
∗
∗
∗
∗
∗
∗
g
∗
∗
∗
Min.−Typ. Max.
−±10 µAVGS=±10V, VDS=0V
20 −−VID= 1mA, VGS=0V
−−1 µAV
0.3 − 1.3 V V
− 39 54 I
− 49 68 mΩ
− 65 91 I
3.6 −−SV
− 370 − pF V
− 9050− pF V
−
7
−
15
−
35
−
15
−
5
−
0.9
−
−−nC
0.8
Min. Typ. Max.
−−1.2 V IS= 0.6A, VGS=0VForward voltage
Unit
= 20V, VGS=0V
DS
= 10V, ID= 1mA
DS
= 2.5A, VGS= 4.5V
mΩ
D
= 2.5A, VGS= 2.5V
I
D
= 1.3A, VGS= 1.8V
mΩ
D
mΩ− 80 160 ID= 0.5A, VGS= 1.5V
= 10V, ID= 2.5A
DS
= 10V
DS
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC
− nC V
ID= 1.3A
V
DD
GS
= 4.5V
V
R
L
7.7Ω
R
G
=10Ω
= 2.5A,
I
D
= 4.5V
GS
R
L
4Ω, RG=10Ω
Unit
10V
V
Conditions
10V
DD
Conditions
RUF025N02
2/4
Transistors
zElectrical characteristics curves
1000
100
CAPACITANCE : C (pF)
10
0.01
0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10
Ta=125°C
1
(A)
D
0.1
0.01
DRAIN CURRENT : I
0.001
75°C
25°C
−25°C
0.40.2 0.6 0.8 1.0 1.2 1.4 1.6
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
1000
(mΩ)
DS (on)
Ta=125°C
75°C
25°C
100
−25°C
Ta=25°C
f=1MHz
V
GS
=0V
Ciss
Coss
Crss
VDS=10V
Pulsed
VGS=4.5V
Pulsed
1000
100
10
SWITCHING TIME : t (ns)
1
0.01
td(off)
td(on)
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.2 Switching Characteristics
100
(mΩ)
80
DS(on)
60
40
20
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
01
ID=2.5A
ID=1.3A
23 10456789
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
1000
(mΩ)
Ta=125°C
DS (on)
100
75°C
25°C
−25°C
Ta=25°C
VDD=10V
VGS=4.5V
G
=10Ω
R
Pulsed
tf
tr
Ta=25°C
Pulsed
VGS=2.5V
Pulsed
RUF025N02
6
Ta=25°C
DD=10V
V
I
D=2.5A
(V)
5
R
G=10Ω
GS
Pulsed
4
3
2
1
GATE-SOURCE VOLTAGE : V
0
0
1234 567
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
(A)
S
SOURCE CURRENT : I
Ta=125°C
1
0.1
0.01
75°C
25°C
−25°C
0.0
0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
1000
(mΩ)
Ta=125°C
DS (on)
75°C
25°C
−25°C
100
VGS=0V
Pulsed
VGS=1.8V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
10
0.01
0.1
110
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
10
0.01
0.1
110
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
10
0.01
0.1
110
DRAIN CURRENT : ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current(ΙΙΙ)
3/4
Transistors
1000
(mΩ)
Ta=125°C
75°C
DS (on)
25°C
−25°C
100
VGS=1.5V
Pulsed
1000
(mΩ)
DS (on)
100
VGS=1.5V
VGS=1.8V
VGS=2.5V
VGS=4.5V
Ta=25°C
Pulsed
10
VDS=10V
Pulsed
Ta=−25°C
10
: Yfs (S)
RUF025N02
25°C
75°C
125°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
10
0.01
0.1
DRAIN CURRENT : ID (A)
Fig.10 Static Drain-Source
On-State Resistance
vs. Drain Current ( )
zMeasurement circuit
R
G
Fig.13 Switching Time Measurement Circuit
I
G(Const.)
110
V
GS
D
I
D.U.T.
V
GS
R
G
D
I
D.U.T.
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
10
0.01
0.1
DRAIN CURRENT : ID (A)
110
Fig.11 Static Drain-Source
On-State Resistance
vs. Drain Current ( )
V
DS
GS
R
L
V
DD
V
V
DS
V
DS
R
L
V
DD
V
GS
FORWARD TRANSFER ADMITTANCE
0.1
0.01
DRAIN CURRENT : ID (A)
Fig.12 Forward Transfer Admittance
vs. Drain Current
Pulse Width
50%
10%
90%
10% 10%
90% 90%
t
d(on)
t
t
on
t
d(off)
r
Fig.14 Switching Waveforms
V
G
g
Q
Q
gs
Q
gd
0.1
t
off
50%
110
t
f
Charge
Fig.15 Gate Charge Measurement Circuit
Fig.16 Gate Charge Waveform
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
ROHM Customer Support System
www.rohm.com
THE AMERICAS / EUROPE / ASIA / JAPAN
Contact us : webmaster@ rohm.co. jp
Copyright © 2008 ROHM CO.,LTD.
21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan
TEL : +81-75-311-2121
FAX : +81-75-315-0172
Appendix1-Rev2.0
Loading...