ROHM RUF025N02 Technical data

RUF025N02

Transistors

1.5V Drive Nch MOSFET

RUF025N02

zStructure

Silicon N-channel MOSFET

zFeatures

1) Low On-resistance.

2) Space savin g, small surface mount package (TUMT3).

3) Low voltage drive (1.5V drive).

zApplications

Switching

zPackaging specifications

Package

Type

RUF025N02

Code
Basic ordering unit (pieces)

Taping

TL

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Total power dissipation

Channel temperature
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

∗1

∗1
∗2

Limits Unit

20

±10

±2.5

±5

0.6
5

0.8

150

−55 to +150

zThermal resistance

Parameter

Channel to ambient

∗ Mounted on a ceramic board

Symbol Limits Unit

∗

156

zDimensions (Unit : mm)

TUMT3

(1) Gate
(2) Source
(3) Drain

Abbreviated symbol : XE

zInner circuit

(3)

(1)

∗1

(2)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

VV
VV
AI
AI
AI
AI

WP

°CTch
°CTstg

°C/WRth(ch-a)

0.2Max.

∗2

(1) Gate
(2) Source
(3) Drain

1/4

Transistors

zElectrical characteristics (T a=25°C)

Parameter Symbol
Gate-source leakage

Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

V

SD

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

∗

Min.−Typ. Max.

−±10 µAVGS=±10V, VDS=0V

20 −−VID= 1mA, VGS=0V

−−1 µAV

0.3 − 1.3 V V

− 39 54 I

− 49 68 mΩ

− 65 91 I

3.6 −−SV

− 370 − pF V

− 9050− pF V

−

7

−

15

−

35

−

15

−

5

−

0.9

−

−−nC

0.8

Min. Typ. Max.

−−1.2 V IS= 0.6A, VGS=0VForward voltage

Unit

= 20V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 2.5A, VGS= 4.5V

mΩ

D

= 2.5A, VGS= 2.5V

I

D

= 1.3A, VGS= 1.8V

mΩ

D

mΩ− 80 160 ID= 0.5A, VGS= 1.5V

= 10V, ID= 2.5A

DS

= 10V

DS

=0V

GS

− pF f=1MHz

− ns

− ns

− ns

− ns

− nC

− nC V

ID= 1.3A

V

DD

GS

= 4.5V

V
R

L

7.7Ω

R

G

=10Ω

= 2.5A,

I

D

= 4.5V

GS

R

L

4Ω, RG=10Ω

Unit

10V

V

Conditions

10V

DD

Conditions

RUF025N02

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