ROHM RUF015N02 Technical data

RUF015N02

Transistors

1.8V Drive Nch MOSFET

RUF015N02

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Low On-resistance.

2) Space savin g, small surface mount package (TUMT3).

3) Low voltage drive (1.8V drive).

zApplications

Switching

zPackaging specifications zInner circuit

Type

RUF015N02

Package
Code
Basic ordering unit (pieces)

Taping

TL

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Total power dissipation

Channel temperature
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

∗1

∗1
∗2

Limits Unit

20
10

±1.5
±3.0

0.6

2.4

0.8

150

−55 to +150

zThermal resistance

Parameter
Channel to ambient

∗ Mounted on a ceramic board

Symbol Limits Unit

∗

156

TUMT3

(1) Gate
(2) Source
(3) Drain

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

VV
VV
AI
AI
AI
AI

WP

°CTch
°CTstg

Abbreviated symbol : PS

∗1

°C/WRth(ch-a)

0.2Max.

(3)

∗2

(2)

(1) Gate
(2) Source
(3) Drain

1/3

Transistors

zElectrical characteristics (T a=25°C)

Parameter Symbol
Gate-source leakage

Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

Min.−Typ. Max.

− 10 µAVGS=10V, VDS=0V

20 −−VID= 1mA, VGS=0V

−−1 µAV

0.3 − 1.0 V V

− 130 180 I

− 170 240 mΩ

− 220 310 I

1.6 −−SV

− 110 − pF V

− 1815− pF V

−

5

−

5

−

20

−

3

−

1.8

−

0.3

−

0.3

−−nC I

Unit

= 20V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 1.5A, VGS= 4.5V

mΩ

D

I

= 1.5A, VGS= 2.5V

D

= 0.8A, VGS= 1.8V

mΩ

D

= 10V, ID= 1.5A

DS

= 10V

DS

=0V

GS

− pF f=1MHz

− ns

− ns

− ns

− ns

2.5 nC

− nC V

ID= 1.0A

V

DD

V

GS

= 4.5V

R

L

=10Ω

R

G

=10Ω

V

10V

DD

= 4.5V

GS

= 1.5A

D

RUF015N02

Conditions

10V

Parameter Symbol

Min. Typ. Max.

V

SD

Unit

−−1.2 V IS= 0.6A, VGS=0VForward voltage

Conditions

2/3