ROHM RUF015N02 Technical data

RUF015N02

Transistors

1.8V Drive Nch MOSFET

RUF015N02

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Low On-resistance.

2) Space savin g, small surface mount package (TUMT3).

3) Low voltage drive (1.8V drive).

zApplications

Switching

zPackaging specifications zInner circuit

Type

RUF015N02

Package
Code
Basic ordering unit (pieces)

Taping

TL

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)
Total power dissipation

Channel temperature
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

∗1

∗1
∗2

Limits Unit

20
10

±1.5
±3.0

0.6

2.4

0.8

150

−55 to +150

zThermal resistance

Parameter
Channel to ambient

∗ Mounted on a ceramic board

Symbol Limits Unit

∗

156

TUMT3

(1) Gate
(2) Source
(3) Drain

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

VV
VV
AI
AI
AI
AI

WP

°CTch
°CTstg

Abbreviated symbol : PS

∗1

°C/WRth(ch-a)

0.2Max.

(3)

∗2

(2)

(1) Gate
(2) Source
(3) Drain

1/3

Transistors

zElectrical characteristics (T a=25°C)

Parameter Symbol
Gate-source leakage

Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

Min.−Typ. Max.

− 10 µAVGS=10V, VDS=0V

20 −−VID= 1mA, VGS=0V

−−1 µAV

0.3 − 1.0 V V

− 130 180 I

− 170 240 mΩ

− 220 310 I

1.6 −−SV

− 110 − pF V

− 1815− pF V

−

5

−

5

−

20

−

3

−

1.8

−

0.3

−

0.3

−−nC I

Unit

= 20V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 1.5A, VGS= 4.5V

mΩ

D

I

= 1.5A, VGS= 2.5V

D

= 0.8A, VGS= 1.8V

mΩ

D

= 10V, ID= 1.5A

DS

= 10V

DS

=0V

GS

− pF f=1MHz

− ns

− ns

− ns

− ns

2.5 nC

− nC V

ID= 1.0A

V

DD

V

GS

= 4.5V

R

L

=10Ω

R

G

=10Ω

V

10V

DD

= 4.5V

GS

= 1.5A

D

RUF015N02

Conditions

10V

Parameter Symbol

Min. Typ. Max.

V

SD

Unit

−−1.2 V IS= 0.6A, VGS=0VForward voltage

Conditions

2/3

Transistors

zElectrical characteristics curves

1000

Ta=25°C
f=1MHz
V

GS

=0V

100

CAPACITANCE : C (pF)

10

0.01

0.1 1 10 100

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.1 Typical Capacitance

vs. Drain-Source Voltage

Ciss

Coss
Crss

1000

100

SWITCHING TIME : t (ns)

tf

10

td(on)

tr

1

0.01

DRAIN CURRENT : ID (A)

Fig.2 Switching Characteristics

Ta=25°C

DD

=10V

V

GS

=4.5V

V
R

G

=10Ω

Pulsed

td(off)

0.1 1 10

RUF015N02

5

Ta=25°C

V

DD

=10V

(V)

I

D

=1.5A

GS

4

G

=10Ω

R
Pulsed

3

2

1

GATE-SOURCE VOLTAGE : V

0

0.0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

TOTAL GATE CHARGE : Qg (nC)

Fig.3 Dynamic Input Characteristics

10

1

(A)

D

0.1

0.01

DRAIN CURRENT : I

0.001

0.0001

Ta=125°C

75°C
25°C

−25°C

0.50.0 1.0 1.5 2.0

GATE-SOURCE VOLTAGE : VGS (V)

Fig.4 Typical Transfer Characteristics

1000

Ta=125°C

75°C

(mΩ)

25°C

−25°C

DS (on)

100

VDS=10V
Pulsed

VGS=1.8V
Pulsed

500
450

(mΩ)

400

DS(on)

350
300
250
200
150
100

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

ID=1.5A

ID=0.8A

50
0

01

23 10456789

GATE-SOURCE VOLTAGE : VGS (V)

Fig.5 Static Drain-Source

On-State Resistance vs.

Gate-source Voltage

1000

Ta=125°C

75°C
25°C

−25°C

DS (on) (mΩ)

100

Ta=25°C
Pulsed

VGS=2.5V
Pulsed

10

(A)

S

1

0.1

SOURCE CURRENT : I

0.01

0.0

SOURCE-DRAIN VOLTAGE : VSD (V)

Source-Drain Voltage

1000

(mΩ)

DS (on)

100

Ta=125°C

−25°C

Ta=125°C

75°C
25°C

−25°C

0.5 1.0 1.5

Fig.6 Source Current vs.

VGS=4.5V

75°C
25°C

Pulsed

VGS=0V
Pulsed

STATIC DRAIN-SOURCE

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

10

0.01

0.1

110

DRAIN CURRENT : ID (A)

Fig.7 Static Drain-Source

On-State Resistance

vs. Drain Current ( Ι )

ON-STATE RESISTANCE : R

10

0.01

0.1

DRAIN CURRENT : ID (A)

Fig.8 Static Drain-Source

On-State Resistance

vs. Drain Current ( ΙΙ )

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

110

10

0.01

0.1

110

DRAIN CURRENT : ID (A)

Fig.9 Static Drain-Source

On-State Resistance

vs. Drain Current ( ΙΙΙ )

zNotice

This product might cause chip aging and breakdown under the large electrified environment.

Please consider to design ESD pro tection circuit.

3/3

Appendix

Notes

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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
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Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.

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Appendix1-Rev2.0