ROHM RUE002N05 Technical data

1.2V Drive Nch MOSFET

RUE002N05

Structure



Silicon N-channel MOSFET

Features



1) High speed switing.

2) Small package(EMT3).

3)Ultra low voltage drive(1.2V drive).

Application



Switching

Dimensions



EMT3

(SC-75A)
<SOT-416>

(Unit : mm)

Abbreviated symbol : RH

Packaging specifications



Package Taping

Type

Code TL
Basic ordering unit (pieces) 3000

RUE002N05 

Absolute maximum ratings



Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

(Ta = 25C)

Symbol Limits Unit

DSS

GSS

D

DP

S

SP

D

*1

*1

*1

*1

*2

*2

50 V



200 mA



800 mA



125 mA

800 mA

150 mW

Channel temperature Tch 150
Range of storage temperature Tstg

*1 Pw10s, Duty cycle1%

*2 Each terminal mounted on a recommended land.

55 to +150C



8V

C



Inner circuit



(2) (1)

(1) SOURCE
(2) GATE
(3) DRAIN

(3)

∗1

∗2

∗1 BODY DIODE
∗2 ESD PROTECTION DIODE

Thermal resistance



Parameter

Channel to ambient Rth (ch-a) 833

* Each terminal mounted on a recommended land.

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Symbol Limits Unit

*

C / W



2010.06 - Rev.B

V

V

V

V

Electrical characteristics (Ta = 25C)

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

*Pulsed

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

l 0.4 - - S ID=200mA, VDS=10V

fs

iss

oss

rss

d(on)

r

d(off)

f

Body diode characteristics (Source-Drain) (Ta = 25C)

Symbol Min. Typ. Max. Unit

Forward voltage V

*Pulsed

SD

--10

50 - - V ID=1mA, VGS=0V

--1AVDS=50V, VGS=0V

0.3 - 1.0 V VDS=10V, ID=1mA

-1.62.2 I

-1.72.4 I

*

-1.92.7 I

-2.04.0 I

-2.47.2 I

*

-25-pFV

-6-pFV

-3-pFf=1MHz

*

*

-4-nsI

-6-nsV

*

*

-15-nsR

*

*

-55-nsR

*

*

*

--1.2VI

ConditionsParameter

AVGS=8V, VDS=0V



=200mA, VGS=4.5

D

=200mA, VGS=2.5

D



=100mA, VGS=1.8

D

=40mA, VGS=1.5V

D

=20mA, VGS=1.2V

D

=10V

DS

=0V

GS

=100mA, VDD 30

D

=4.5V

GS

=300



L

=10



G

ConditionsParameter

=200mA, VGS=0V

s

Data Sheet RUE002N05

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2010 ROHM Co., Ltd. All rights reserved.

2010.06 - Rev.B

0.1

1

10

100

0.01 0.1 1

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

0

0.1

0.2

0.3

0.4

0 0.2 0.4 0.6 0.8 1

VGS= 0.8V

Ta=25°C
Pulsed

VGS= 1.0V

VGS= 4.5V
V

GS

= 2.5V

V

GS

=1.8V

V

GS

=1.5V

VGS= 1.2V

0.001

0.01

0.1

1

00.511.52

VDS= 10V

Pulsed

Ta= 125°C

Ta= 75°C
Ta= 25°C

Ta= - 25 °C

0.1

1

10

100

0.01 0.1 1

Ta= 25°C
Pulsed

VGS=1.2V

V

GS

= 1.5V

V

GS

= 1.8V

V

GS

= 2.5V

V

GS

= 4.5V

0.1

1

10

100

0.01 0.1 1

VGS= 2.5V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

0.1

1

10

100

0.01 0.1 1

VGS= 4.5V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

0.1

1

10

100

0.01 0.1 1

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

0.1

1

10

100

0.01 0.1 1

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Fig.1 Typical Output Characteristics(Ⅰ)

Fig.2 Typical Output Characteristics(Ⅱ)

Fig.3 Typical Transfer Characteristics

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)

Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅵ)

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN CURRENT : I

D

[A]

GATE-SOURCE VOLTAGE : VGS[V]

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[



]

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[



]

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[



]

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[



]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : RDS(on)[



]

DRAIN-CURRENT : ID[A]

Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[



]

DRAIN CURRENT : I

D

[A]

DRAIN CURRENT : I

D

[A]

VGS= 1.5V

Pulsed

VGS= 1.8V

Pulsed

VGS= 1.2V

Pulsed

0

0.1

0.2

0.3

0.4

0246810

VGS=0.8V

Ta=25°C
Pulsed

VGS=1.0V

VGS=1.2V

VGS= 4.5V
V

GS

= 2.5V

V

GS

=1.8V

V

GS

=1.5V

Electrical characteristic curves

Data Sheet RUE002N05

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2010 ROHM Co., Ltd. All rights reserved.

2010.06 - Rev.B

0.1

1

0.001 0.01 0.1 1

VDS= 10V

Pulsed

Ta= -25°C

Ta=25°C
Ta=75°C

Ta=125°C

0

1

2

3

4

5

6

7

8

9

10

0510

Ta=25°C
Pulsed

ID=200mA

ID= 20mA

0.01

0.1

1

00.511.5

VGS=0V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0.1

1

10

100

1000

0.01 0.1 1 10 100

C

iss

C

oss

C

rss

Ta=25°C
f=1MHz
V

GS

=0V

1

10

100

1000

0.01 0.1 1

t

f

t

d(on)

t

d(off)

Ta= 25°C
V

DD

=30V

V

GS

=4.5V

R

G

=10



Pulsed

t

r

Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage

Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage

Fig.14 Typical Capacitance
vs. Drain-Source Voltage

Fig.13 Switching Characteristic s

SOURCE CURRENT : I

s

[A]

SOURCE-DRAIN VOLTAGE : VSD [V]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(ON)[



]

GATE-SOURCE VOLTAGE : VGS[V]

SWITCHING TIME : t [ns]

DRAIN-CURRENT : ID[A]

DRAIN-SOURCE VOLTAGE : VDS[V]

CAPACITANCE : C [pF]

Fig.10 Forward Transfer Admittance
vs. Drain Current

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : ID[A]

Data Sheet RUE002N05

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2010 ROHM Co., Ltd. All rights reserved.

2010.06 - Rev.B

F

it

S

%

V
V

Measurement circuits

V

GS

R

G

D.U.T.

D

I

V

D

R

L

V

DD

GS
DS

td(on)

ig.1-1 Switching time measurement circu

Fig.1-2 Switching waveforms

Notice

This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.

Pulse width

50%

10%

10% 10%

ton toff

90%

90% 90

td(off)

tr

50%

tf

Data Sheet RUE002N05

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2010 ROHM Co., Ltd. All rights reserved.

2010.06 - Rev.B

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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

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R1010

A