ROHM RUC002N05 Technical data



A

1.2V Drive Nch MOSFET

RUC002N05

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) High speed switing.

2) Small package(SST3).

3)Ultra low voltage drive(1.2V drive).

 Application

Switching

SST3

<SOT-23>

bbreviated symbol : RH

 Packaging specifications  Inner circuit

Package Taping

Type

Code T116
Basic ordering unit (pieces) 3000

RUC002N05 

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

DSS

GSS

D

DP

S

SP

D

*1

*1

*1

*1

*2

*2

50 V

8V

200 mA

800 mA

150 mA

800 mA

200 mW

(1) SOURCE
(2) GATE
(3) DRAIN

Channel temperature Tch 150 C
Range of storage temperature Tstg

*1 Pw10s, Duty cycle1%

*2 Each terminal mounted on a recommended land.

55 to +150 C

 Thermal resistance

Parameter

Channel to ambient Rth (ch-a) 625 C / W

* Each terminal mounted on a recommended land.

Symbol Limits Unit

*

(3)

∗1

∗2

(1)(2)

∗1 BODY DIODE
∗2 ESD PROTECTION DIODE

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2010.06 - Rev.B



 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=8V, VDS=0V

50 - - V ID=1mA, VGS=0V

--1AVDS=50V, VGS=0V

0.3 - 1.0 V VDS=10V, ID=1mA

-1.62.2 I

Static drain-source on-state
resistance

R

DS (on)

-1.72.4 I

*

-1.92.7 I



-2.04.0 I

-2.47.2 I

iss

oss

rss

d(on)

r

d(off)

*

-25-pFV

-6-pFV

-3-pFf=1MHz

-4-nsI

*

*

-6-nsV

*

*

-15-nsR

*

*

-55-nsR

*

*

f

Forward transfer admittance l Yfs l 0.4 - - S ID=200mA, VDS=10V

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

*Pulsed

Conditions

=200mA, VGS=4.5V

D

200mA, VGS=2.5V

D=

100mA, VGS=1.8V

D=

=40mA, VGS=1.5V

D

=20mA, VGS=1.2V

D

=10V

DS

=0V

GS

=100mA, VDD 30V

D

=4.5V

GS

=300

L

=10

G

Data Sheet RUC002N05

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

--1.2VI

Conditions

=200mA, VGS=0V

s

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2010 ROHM Co., Ltd. All rights reserved.

2010.06 - Rev.B