Datasheet RU1L002SN Datasheet (ROHM)

Data Sheet

2.5V Drive Nch MOSFET

RU1L002SN

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

UMT3F

0.32

Features

1) Low on-resistance.

0.4250.425

2.1

1.25

2) Low voltage drive (2.5V drive).

3) Small package (UMT3F).

0.65 0.65

Abbreviated symbol : RK

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TCL
Basic ordering unit (pieces) 3000

RU1L002SN 

(1) Gate
(2) Source
(3) Drain

2.0

(3)

(1) (2)

1.3

(1)

1 ESD PROTECTION DIODE
2 BODY DIODE

0.9

0.530.53

0.13

(3)

∗2

∗1

(2)

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I
Pulsed

Continuous I
Pulsed

Power dissipation P

Symbol Limits Unit

60 V

20 V

250 mA

1

A

125 mA

1

A

200 mW

I

I

DSS

GSS

D

DP

S

SP

D

*1

*1

*2

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Each terminal mounted on a recommended land

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a) 625 C / W

* Each terminal mounted on a recommended land

Symbol Limits Unit

*

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1/6

2011.08 - Rev.A

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Data Sheet

RU1L002SN

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

60 - - V ID=1mA, VGS=0V

--1AVDS=60V, VGS=0V

1.0 - 2.3 V VDS=10V, ID=1mA

- 1.7 2.4

Static drain-source on-state
resistance

R

DS (on)

- 2.1 3.0

***

- 2.3 3.2



- 3.0 12.0

iss

oss

rss

d(on)

d(off)

*

- 15 - pF VDS=25V

- 4.5 - pF VGS=0V

- 2.0 - pF f=1MHz

- 3.5 - ns VDD 30V, ID=100mA

*

r

f

-5-nsV

*

-18-ns

*

-28-ns

*

Forward transfer admittance l Yfs l 0.25 - - S VDS=10V, ID=250mA

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

*Pulsed

Conditions

I

=250mA, VGS=10V

D

I

=250mA, VGS=4.5V

D

I

=250mA, VGS=4.0V

D

I

=10mA, VGS=2.5V

D

=10V

GS

Body diode characteristics (Source-Drain)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=250mA, VGS=0V

2/6

2011.08 - Rev.A

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Data Sheet

RU1L002SN

Electrical characteristic curves (Ta=25C)

0

0.1

0.2

0.3

0.4

0.5

0 0.2 0.4 0.6 0.8 1

VGS= 2.5V

VGS= 2.8V

V

GS

= 10V
VGS= 4.5V
VGS= 4.0V

Ta= 25°C
Pulsed

Fig.1 Typical Output Characteristics(Ⅰ)

DRAIN CURRENT : I

D

[A]

DRAIN-SOURCE VOLTAGE : VDS[V]

0

0.1

0.2

0.3

0.4

0.5

0 2 4 6 8 10

VGS= 2.5V

VGS= 2.8V

V

GS

= 10V

V

GS

= 4.5V

V

GS

= 4.0V

Ta= 25°C
Pulsed

Fig.2 Typical Output Characteristics(Ⅱ)

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN CURRENT : I

D

[A]

0.0001

0.001

0.01

0.1

1

0 1 2 3

Ta=125°C

Ta=75°

C

Ta=25°

C

Ta=

-25

°C

VDS= 10V
Pulsed

Fig.3 Typical Transfer Characteristics

DRAIN CURRENT : I

D

[A]

GATE-SOURCE VOLTAGE : VGS[V]

0.1

1

10

100

0.001 0.01 0.1 1

V

GS

= 2.5V

V

GS

= 4.0V

V

GS

= 4.5V

V

GS

= 10V

Ta= 25°C
Pulsed

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[W]

0.1

1

10

100

0.001 0.01 0.1 1

V

GS

= 10V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[W]

0.1

1

10

100

0.001 0.01 0.1 1

V

GS

= 4.5V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[W]

3/6

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Data Sheet

RU1L002SN

0.1

1

10

100

0.001 0.01 0.1 1
VGS= 4.0V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[W]

0.1

1

10

100

0.001 0.01 0.1 1

V

GS

= 2.5V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[W]

0.01

0.1

1

0.001 0.01 0.1 1

VDS= 10V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Fig.9 Forward Transfer Admittance vs. Drain Current

FORWARD TRANSFER

ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : ID[A]

0.001

0.01

0.1

1

0 0.5 1 1.5

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

VGS=0V
Pulsed

Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage

REVERSE DRAIN CURRENT : Is [A]

SOURCE-DRAIN VOLTAGE : VSD [V]

0

2

4

6

8

0 2.5 5 7.5 10

ID= 0.25A

ID= 0.01A

Ta=25°C
Pulsed

Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[W]

GATE-SOURCE VOLTAGE : VGS[V]

1

10

100

1000

0.01 0.1 1

t

f

t

r

t

d(off)

t

d(on)

Ta=25°C
VDD= 30V
VGS=10V
RG=10W
Pulsed

Fig.12 Switching Characteristics

SWITCHING TIME : t [ns]

DRAIN-CURRENT : ID[A]

4/6

2011.08 - Rev.A

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Data Sheet

RU1L002SN

1

10

100

0.01 0.1 1 10 100

Fig.13 Typical Capacitance vs. Drain-Source Voltage

DRAIN-SOURCE VOLTAGE : VDS[V]

CAPACITANCE : C [pF]

Ta=25°C
f=1MHz

VGS=0V

Ciss

Coss

Crss

5/6

2011.08 - Rev.A

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Data Sheet

RU1L002SN

D

F

it

%

V
V

 Measurement circuits

VGS

RG

ig.1-1 Switching Time Measurement Circu

D.U.T.

D

I

RL

VDD

VDS

GS
DS

t

Fig.1-2 Switching Waveforms

Pulse width

50%

10%

10% 10%

d(on)

90% 90

t

r

t

on

90%

t

d(off)

t

50%

off

t

f

 Notice

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ES
protection circuit.

6/6

2011.08 - Rev.A

Notes

Notice

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