ROHM RU1L002SN Technical data
Data Sheet
2.5V Drive Nch MOSFET
RU1L002SN
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
UMT3F
0.32
Features
1) Low on-resistance.
0.4250.425
2.1
1.25
2) Low voltage drive (2.5V drive).
3) Small package (UMT3F).
0.65 0.65
Abbreviated symbol : RK
Application
Switching
Packaging specifications Inner circuit
Package Taping
Type
Code TCL
Basic ordering unit (pieces) 3000
RU1L002SN
(1) Gate
(2) Source
(3) Drain
2.0
(3)
(1) (2)
1.3
(1)
1 ESD PROTECTION DIODE
2 BODY DIODE
0.9
0.530.53
0.13
(3)
∗2
∗1
(2)
Absolute maximum ratings (Ta = 25C)
Parameter
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed
Continuous I
Pulsed
Power dissipation P
Symbol Limits Unit
60 V
20 V
250 mA
1
A
125 mA
1
A
200 mW
I
I
DSS
GSS
D
DP
S
SP
D
*1
*1
*2
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land
Thermal resistance
Parameter
Channel to Ambient Rth (ch-a) 625 C / W
* Each terminal mounted on a recommended land
Symbol Limits Unit
*
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Data Sheet
RU1L002SN
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
--10 AVGS=20V, VDS=0V
60 - - V ID=1mA, VGS=0V
--1AVDS=60V, VGS=0V
1.0 - 2.3 V VDS=10V, ID=1mA
- 1.7 2.4
Static drain-source on-state
resistance
R
DS (on)
- 2.1 3.0
***
- 2.3 3.2
- 3.0 12.0
iss
oss
rss
d(on)
d(off)
*
- 15 - pF VDS=25V
- 4.5 - pF VGS=0V
- 2.0 - pF f=1MHz
- 3.5 - ns VDD 30V, ID=100mA
*
r
f
-5-nsV
*
-18-ns
*
-28-ns
*
Forward transfer admittance l Yfs l 0.25 - - S VDS=10V, ID=250mA
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
*Pulsed
Conditions
I
=250mA, VGS=10V
D
I
=250mA, VGS=4.5V
D
I
=250mA, VGS=4.0V
D
I
=10mA, VGS=2.5V
D
=10V
GS
Body diode characteristics (Source-Drain)
Parameter Conditions
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.2 V Is=250mA, VGS=0V
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Data Sheet
RU1L002SN
Electrical characteristic curves (Ta=25C)
0
0.1
0.2
0.3
0.4
0.5
0 0.2 0.4 0.6 0.8 1
VGS= 2.5V
VGS= 2.8V
V
GS
= 10V
VGS= 4.5V
VGS= 4.0V
Ta= 25°C
Pulsed
Fig.1 Typical Output Characteristics(Ⅰ)
DRAIN CURRENT : I
D
[A]
DRAIN-SOURCE VOLTAGE : VDS[V]
0
0.1
0.2
0.3
0.4
0.5
0 2 4 6 8 10
VGS= 2.5V
VGS= 2.8V
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
Ta= 25°C
Pulsed
Fig.2 Typical Output Characteristics(Ⅱ)
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN CURRENT : I
D
[A]
0.0001
0.001
0.01
0.1
1
0 1 2 3
Ta=125°C
Ta=75°
C
Ta=25°
C
Ta=
-25
°C
VDS= 10V
Pulsed
Fig.3 Typical Transfer Characteristics
DRAIN CURRENT : I
D
[A]
GATE-SOURCE VOLTAGE : VGS[V]
0.1
1
10
100
0.001 0.01 0.1 1
V
GS
= 2.5V
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 10V
Ta= 25°C
Pulsed
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[W]
0.1
1
10
100
0.001 0.01 0.1 1
V
GS
= 10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[W]
0.1
1
10
100
0.001 0.01 0.1 1
V
GS
= 4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[W]
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2011.08 - Rev.A
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