ROHM RU1C002UN Technical data

Data Sheet

1.2V Drive Nch MOSFET

RU1C002UN

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

UMT3F

0.32

Features

1) Low on-resistance.

0.4250.425

2.1

1.25

2) Low voltage drive(1.2V drive).

Abbreviated symbol : QR

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TCL
Basic ordering unit (pieces) 3000

RU1C002UN 

(1) Gate
(2) Source
(3) Drain

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Continuous I

Pulsed I

Power dissipation P

Symbol Limits Unit

DSS

GSS

D

DP

D

20 V

8V

200 mA

400 mA

*2*1*2

150 mW

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Each terminal mounted on a reference land.

2.0

(3)

(1) (2)

0.65 0.65

1.3

1 BODY DIODE
2 ESD PROTECTION DIODE

0.9

0.13

(3)

∗1

∗2

(1) (2)

0.530.53

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a) 833 C / W

* Each terminal mounted on a reference land.

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.

Symbol Limits Unit

*

1/5

2011.09 - Rev.A

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

RU1C002UN

 Electrical characteristics (Ta = 25C)

Parameter

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=8V, VDS=0V

20 - - V ID=1mA, VGS=0V

--1AVDS=20V, VGS=0V

0.3 - 1.0 V VDS=10V, ID=1mA

Conditions

- 0.8 1.2 ID=200mA, VGS=2.5V

*

Static drain-source on-state
resistance

R

DS (on)

- 1.0 1.4 ID=200mA, VGS=1.8V

- 1.2 2.4 ID=40mA, VGS=1.5V



- 1.6 4.8 ID=20mA, VGS=1.2V

iss

oss

rss

d(on)

d(off)

*

- 25 - pF VDS=10V

- 10 - pF VGS=0V

- 10 - pF f=1MHz

*

-5-nsV

*

r

f

- 10 - ns VGS=4.0V

*

- 15 - ns RL=68

*

- 10 - ns RG=10

10V, ID=150mA

DD

Forward transfer admittance l Yfs l 400 - - mS VDS=10V, ID=200mA

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

*Pulsed

Body diode characteristics (Source-Drain)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

Conditions

- - 1.2 V Is=100mA, VGS=0V

2/5

2011.09 - Rev.A