ROHM RU1C002UN Technical data

Data Sheet

1.2V Drive Nch MOSFET

RU1C002UN

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

UMT3F

0.32

Features

1) Low on-resistance.

0.4250.425

2.1

1.25

2) Low voltage drive(1.2V drive).

Abbreviated symbol : QR

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TCL
Basic ordering unit (pieces) 3000

RU1C002UN 

(1) Gate
(2) Source
(3) Drain

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Continuous I

Pulsed I

Power dissipation P

Symbol Limits Unit

DSS

GSS

D

DP

D

20 V

8V

200 mA

400 mA

*2*1*2

150 mW

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Each terminal mounted on a reference land.

2.0

(3)

(1) (2)

0.65 0.65

1.3

1 BODY DIODE
2 ESD PROTECTION DIODE

0.9

0.13

(3)

∗1

∗2

(1) (2)

0.530.53

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a) 833 C / W

* Each terminal mounted on a reference land.

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Symbol Limits Unit

*

1/5

2011.09 - Rev.A

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Data Sheet

RU1C002UN

 Electrical characteristics (Ta = 25C)

Parameter

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=8V, VDS=0V

20 - - V ID=1mA, VGS=0V

--1AVDS=20V, VGS=0V

0.3 - 1.0 V VDS=10V, ID=1mA

Conditions

- 0.8 1.2 ID=200mA, VGS=2.5V

*

Static drain-source on-state
resistance

R

DS (on)

- 1.0 1.4 ID=200mA, VGS=1.8V

- 1.2 2.4 ID=40mA, VGS=1.5V



- 1.6 4.8 ID=20mA, VGS=1.2V

iss

oss

rss

d(on)

d(off)

*

- 25 - pF VDS=10V

- 10 - pF VGS=0V

- 10 - pF f=1MHz

*

-5-nsV

*

r

f

- 10 - ns VGS=4.0V

*

- 15 - ns RL=68

*

- 10 - ns RG=10

10V, ID=150mA

DD

Forward transfer admittance l Yfs l 400 - - mS VDS=10V, ID=200mA

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

*Pulsed

Body diode characteristics (Source-Drain)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

Conditions

- - 1.2 V Is=100mA, VGS=0V

2/5

2011.09 - Rev.A

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Data Sheet

RU1C002UN

.5

Fig.3 Typical transfer characteristics

Electrical characteristics

0.5

0.4

[A]

D

0.3

0.2

0.1

DRAIN CURRENT : I

0

0 0.2 0.4 0.6 0.8 1

DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V]

Fig.1 Typical Output Characteristics( Ⅰ)

10000

Ta= 25°C
Pulsed

(on)[mΩ]

DS

1000

VGS= 1.5V

VGS= 4.5V

VGS= 2.5V

VGS= 1.8V

Ta=25°C
Pulsed

VGS= 1.3V

VGS= 1.2V

VGS= 1.2V

VGS= 1.5V

VGS= 1.8V

VGS= 2.5V

VGS= 4.0V

0.5

VGS= 2.5V

VGS= 1.8V

0.4

[A]

D

0.3

0.2

0.1

DRAIN CURRENT : I

0

0246810

Fig.2 Typical Output Characteristics( Ⅱ)

10000

VGS= 4.0V

Pulsed

(on)[mΩ]

DS

1000

VGS= 1.3V

VGS= 1.2V

VGS= 1.5V

Ta=25°C
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

1

V

DS

=10V

Pulsed

0.1

(A)

D

0.01

0.001

0.0001

DRAIN CURRENT : I

0.00001

0.0 0.5 1.0 1

GATE-SOURCE VOLTAGE : VGS (V)

10000

VGS= 2.5V

Pulsed

(on)[mΩ]

DS

1000

Ta=125°C

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

75°C
25°C

−25°C

RESISTANCE : R

100

0.001 0.01 0.1 1

STATIC DRAIN-SOURCE ON-STATE

DRAIN-CURRENT : ID[A]

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)

10000

VGS= 1.8V

Pulsed

(on)[mΩ]

DS

1000

RESISTANCE : R

100

STATIC DRAIN-SOURCE ON-STATE

0.001 0.01 0.1 1

DRAIN-CURRENT : ID[A]

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

RESISTANCE : R

100

STATIC DRAIN-SOURCE ON-STATE

0.001 0.01 0.1 1

DRAIN-CURRENT : ID[A]

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)

10000

VGS= 1.5V

Pulsed

(on)[mΩ]

DS

1000

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.001 0.01 0.1 1

DRAIN-CURRENT : ID[A]

Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ)

Ta=125°C

Ta=75°C
Ta=25°C

Ta= -25°C

RESISTANCE : R

100

STATIC DRAIN-SOURCE ON-STATE

0.001 0.01 0.1 1

DRAIN-CURRENT : ID[A]

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)

10000

VGS= 1.2V

Pulsed

(on)[mΩ]

DS

1000

RESISTANCE : R

100

STATIC DRAIN-SOURCE ON-STATE

0.001 0.01 0.1 1

DRAIN-CURRENT : ID[A]

Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅴ)

Ta=125°C

Ta= -25°C

Ta=75°C
Ta=25°C

3/5

2011.09 - Rev.A

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Data Sheet

RU1C002UN

1

VDS= 10V

Pulsed

FORWARD TRANSFER

ADMITTANCE : |Yfs| [S]

0.1

0.01 0.1 1

DRAIN-CURRENT : ID[A]

Fig.10 Forward Transfer Admittance
vs. Drain Current

1000

100

10

SWITHING TIME : t (ns)

1

0.01 0.1

DRAIN CURRENT : ID (A)

Fig.13 Switching characteristics

Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C

Ta=25°C

V

DD

V

GS

R

G

Pulsed

t

d(off)

t

f

t

d(on)

t

r

=10V
=4V

=10Ω

1

1

(A)

S

Ta=125°C

0.1

SOURCE CURRENT : I

0.01

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.11 Source current vs.

source-drain voltage

100

10

CAPACITANCE : C (pF)

1

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.14 Typical capacitance vs.
drain-source voltage

10.50.0

Crss

V

Pulsed

75°C
25°C

−25°C

Ta=25°C

f=1MH
VGS=0V

Coss

GS

=0V

2.5

ID= 0.2A

2

(ON)[Ω]

1.5

DS

ID= 0.02A

Ta=25°C
Pulsed

1

0.5

RESISTANCE : R

0

STATIC DRAIN-SOURCE ON-STATE

1.5

02468

GATE-SOURCE VOLTAGE : VGS[V]

Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage

Z

Ciss

4/5

2011.09 - Rev.A

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Data Sheet

RU1C002UN

F

it

%

V
V

 Measurement circuits

V

GS

D.U.T.

R

G

Pulse width

D

I

V

DS

R

L

V

DD

50%

10%

GS
DS

10% 10%

t

d(on)

t

on

90%

50%

90% 90

t

d(off)

t

r

t

off

t

f

ig.1-1 Switching Time Measurement Circu

Fig.1-2 Switching Waveforms

 Notice

This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.

5/5

2011.09 - Rev.A

Notes

Notice

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