ROHM RTL035N03 Technical data
RTL035N03
Transistors
2.5V Drive Nch MOSFET
RTL035N03
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount p ackage (TUMT6).
3) Low voltage drive (2.5V drive).
zApplications
Switching
zPackaging specifications
Package
Type
RTL035N03
Code
Basic ordering unit (pieces)
zInner circuit
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
D
∗1
∗1
∗2
Limits Unit
30
12
±3.5
±14
0.8
14
1.0
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol Limits Unit
∗
125
TUMT6
Abbreviated symbol : PM
(6)
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
VV
VV
AI
AI
AI
AI
WP
°CTch
°CTstg
°C/WRth(ch-a)
0.2Max.
(5)
∗2
(2)
(4)
∗1
(1) Drain
(2) Drain
(3) Gate
(3)
(4) Source
(5) Drain
(6) Drain
Rev.A 1/2
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
I
GSS
I
DSS
GS (th)
DS (on)
Y
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
Q
Q
gs
Q
gd
V
SD
∗
∗
fs
∗
∗
∗
∗
f
∗
g
∗
∗
Min.−Typ. Max.
− 10 µAVGS=12V, VDS=0V
30 −−VID= 1mA, VGS=0V
−−1 µAV
0.5 − 1.5 V V
− 40 56 I
− 42 59 mΩ
− 56 79 I
3 −−SV
− 350 − pF V
− 9055− pF V
−
9
−
25
−
32
−
20
−
4.6
−
0.8
−
1.5
−−nC
Min. Typ. Max.
−−1.2 V IS= 0.8A, VGS=0VForward voltage
Unit
= 30V, VGS=0V
DS
= 10V, ID= 1mA
DS
= 3.5A, VGS= 4.5V
mΩ
D
=3.5A, VGS= 4V
I
D
= 3.5A, VGS= 2.5V
mΩ
D
= 10V, ID= 3.5A
DS
= 10V
DS
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
− ns
6.4 nC
− nC
V
DD
ID= 1.75A
V
GS
= 4.5V
R
L
=8.6Ω
R
G
=10Ω
V
15V
DD
= 3.5A
I
D
R
L
=4.3Ω
Unit
15V
Conditions
V
= 4.5V
GS
R
G
=10Ω
Conditions
RTL035N03
Rev.A 2/2
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