ROHM RCX080N25 Technical data

Data Sheet

10V Drive Nch MOSFET

RCX080N25

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

TO -220F M

10.0

φ

3.2

4.5

2.8

Features

15.0

1) Low on-resistance.

2) Low input capacitance.

3) High ESD.

14.0

 Application

Switching

 Packaging specifications  Inner circuit

Package Bulk

Type

Code ­Basic ordering unit (pieces) 500

RCX080N25 

(1) Gate

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Avalanche current

Avalanche energy

Power dissipation P

E

DSS

GSS

DP

SP

I

AS

D

S

AS

250 V

30 V

*3

*1,3

8A

32 A

8A

*1

*2

*2

*4

D

32 A

4A

4.66 mJ

35 W

(2) Drain
(3) Source

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 L 500H, V

*3 Limited only by maximum channel temperature allowed.

=25C

*4 T

C

=50V, RG=25, Tch=25C

DD

12.0

8.02.5

1.3

(1) (3)(2)

1.2

0.8

2.54 2.62.54

(2)(3)(1)

1BODYDIODE

0.75

∗1

 Thermal resistance

Parameter

Channel to Case Rth (ch-c) 3.57 C / W

* TC=25°C

* Limited only by maximum channel temperature allowed.

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Symbol Limits Unit

*

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Data Sheet

RCX080N25

)

 Electrical characteristics (Ta = 25C

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=30V, VDS=0V

250 - - V ID=1mA, VGS=0V

--10AVDS=250V, VGS=0V

3.0 - 5.0 V VDS=10V, ID=1mA

*

- 460 600

*

l 2.2 - - S VDS=10V, ID=4A

- 840 - pF VDS=25V

- 50 - pF VGS=0V

- 25 - pF f=1MHz

- 22 - ns VDD 125V, ID=4A

*

- 28 - ns VGS=10V

*

- 28 - ns RL=31.25

*

- 14 - ns RG=10

*

- 15 - nC VDD 125V, ID=8A

*

- 6.25 - nC VGS=10V

*

- 5.5 - nC RL=15.62, RG=10

*

ID=4A, VGS=10V

m

Body diode characteristics (Source-Drain)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.5 V Is=8A, VGS=0V

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Data Sheet

RCX080N25

Electrical characteristic curves (Ta=25C)

0

0.5

1

1.5

2

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=10.0V

VGS=7.0V

VGS=8.0V

Ta=25°C
pulsed

0

2

4

6

8

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=7.0V

VGS=10.0V

VGS=8.0V

Ta=25°C
pulsed

0.001

0.01

0.1

1

10

0 2 4 6 8 10

Drain Current : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.3 Typical Transfer Characteristics

VDS=10V
pulsed

Ta=125°C

Ta=75°C
Ta=25°C

Ta=-25°C

0

2

4

6

8

10

-50 -25 0 25 50 75 100 125 150

Gate Threshold Voltage : V

GS(th)

[V]

Channel Temperature : Tch [℃]

Fig.4 Gate Threshold Voltage vs. Channel Temperature

VDS=10V
I

D

=1mA

pulsed

10

100

1000

10000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mW]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0

200

400

600

800

1000

1200

1400

1600

1800

2000

-50 -25 0 25 50 75 100 125 150

Static Drain-Source On-State Resistance

R

DS(on)

[mW]

Channel Temperature : Tch [℃]

Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature

VGS=10V
pulsed

ID=8.0A

ID=4.0A

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2011.11 - Rev.A