ROHM RB205T-90 Technical data

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Diodes

Schottky barrier diode

RB205T-90

zApplications zExternal dimensions (Unit : mm) zStructure

Switching power supply

zFeatures

1)

Cathode common type.

10.0±0.3

　　　 0.1

(TO-220)

2) Low I

R

3) High reliability

zConstruction

Silicon epitaxial planar

①

1.2

1.3

0.8

(1) (2) (3)

12.0±0.2

5.0±0.2 8.0±0.2

13.5MIN

ROHM : ＴO220FN

Manu facture Date

①

zAbsolute maximum ratings (Ta=25°C)

everse voltage (repetitive peak)

R

everse voltage (DC)

R
Ave 15

rage rectified forward current（*1

ard current surge peak （60Hz・1cyc）（*1）

Forw

nction temperature

Ju

torage temperature

S

*1)Tc=100℃max. Per chip : Io/2

(

Parameter

Symbol Unit

V

RM

V

）

R

Io A

I

FSM

Tj

Tstg

Limits

90
90

100
150

-40 to +150

zElectrical characteristic (Ta=25°C)

Forward voltage

Reverse current
Thermal impedance

Parameter

Symbol Min. Typ. Max. Unit Conditions

V

F

I

R

θjc - -

- - 0.78 V

--300µA

2.0

　 0.2

15.0±0.4

8.0

0.7±0.1

0.05

4.5±0.3

　　　 0.1

2.8±0.2

　　　 0.1

2.6±0.5

V
V

A

℃
℃

=7.5A

I

F

=90V

V

R

/W junction to case

℃

RB205T-90

Rev.C 1/3

RB205T-90

Diodes

zElectrical characteristic curves

Rev.C 2/3

10

Ta=150℃

Ta=125℃

Ta=75℃

1

0.1

FORWARD CURRENT:IF(A)

0.01
0 100 200 300 400 500 600 700 800 900

FORWARD VOLTAGE：VF(mV)

VF-IF CHARACTERISTICS

770

760

750

740

730

FORWARD VOLTAGE:VF(mV)

720

300

250

200

150

100

PEAK SURGE

50

FORWARD CURRENT:IFSM(A)

0

1000

100

PEAK SURGE

FORWARD CURRENT:IFSM(A)

10

1 10 100

AVE:735.7mV

VF DISPERSION MAP

AVE:157.0A

IFSM DISRESION MAP

TIME:t(ms)

IFSM-t CHARACTERISTICS

Ifsm

Ifsm

Ta=25℃

Ta=-25℃

Ta=25℃

IF=7.5A

n=30pcs

8.3ms

t

1cyc

100000

10000

1000

100

10

1

REVERSE CURRENT:IR(uA)

0.1

0.01
0 102030405060708090

200

180

160

140

120

100

80

60

40

REVERSE CURRENT:IR(uA)

20

0

30

25

20

15

10

5

RESERVE RECOVERY TIME:trr( ns)

0

100

IM=100mA IF=7.5A

10

TRANSIENT

1

THAERMAL IMPEDANCE:Rth (℃/W)

0.1

0.001 0.01 0.1 1 10 100 1000

Ta=150℃

REVERSE VOLTAGE：VR(V)

VR-IR CHARACTERISTICS

AVE:25.4uA

IR DISPERSION MAP

AVE:12.4ns

trr DISPERSION MAP

1ms

time

300us

TIME:t(s)

Rth-t CHARACTERISTICS

Ta=125℃

Ta=75℃

Ta=25℃

Ta=-25℃

Ta=25℃
VR=90V
n=30pcs

Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs

Rth(j-a)

Rth(j-c)

1000

f=1MHz

100

10

TERMINALS:Ct(pF)

CAPACITANCE BETWEEN

1

0102030

REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS

900

890

880

870

860

850

840

830

TERMINALS:Ct(pF)

820

CAPACITANCE BETWEEN

810

800

1000

100

PEAK SURGE

FORWARD CURRENT:IFSM(A)

10

1 10 100

30

25

20

15

10

FORWARD POWER

DISSIPATION:Pf(W)

5

0

0 5 10 15 20 2 5 30

AVE:850.3pF

Ct DISPERSION MAP

Ifsm

NUMBER OF CYCLES

IFSM-CYCLE CHARACTERISTICS

Sin(θ＝180)

AVERAGE RECTIFIED

FORWARD CURRENT：Io(A)

Io-Pf CHARACTERISTICS

8.3ms
1cyc

DC

Ta=25℃

f=1MHz

VR=0V

n=10pcs

8.3ms

D=1/2