查询RB205T-90供应商
Diodes
Schottky barrier diode
RB205T-90
zApplications zExternal dimensions (Unit : mm) zStructure
Switching power supply
zFeatures
1)
Cathode common type.
10.0±0.3
0.1
(TO-220)
2) Low I
R
3) High reliability
zConstruction
Silicon epitaxial planar
①
1.2
1.3
0.8
(1) (2) (3)
12.0±0.2
5.0±0.2 8.0±0.2
13.5MIN
ROHM : ＴO220FN
Manu facture Date
①
zAbsolute maximum ratings (Ta=25°C)
everse voltage (repetitive peak)
R
everse voltage (DC)
R
Ave 15
rage rectified forward current（*1
ard current surge peak （60Hz・1cyc）（*1）
Forw
nction temperature
Ju
torage temperature
S
*1)Tc=100℃max. Per chip : Io/2
(
Parameter
Symbol Unit
V
RM
V
）
R
Io A
I
FSM
Tj
Tstg
Limits
90
90
100
150
-40 to +150
zElectrical characteristic (Ta=25°C)
Forward voltage
Reverse current
Thermal impedance
Parameter
Symbol Min. Typ. Max. Unit Conditions
V
F
I
R
θjc - -
- - 0.78 V
--300µA
2.0
0.2
15.0±0.4
8.0
0.7±0.1
0.05
4.5±0.3
0.1
2.8±0.2
0.1
2.6±0.5
V
V
A
℃
℃
=7.5A
I
F
=90V
V
R
/W junction to case
℃
RB205T-90
Rev.C 1/3
RB205T-90
Diodes
zElectrical characteristic curves
Rev.C 2/3
10
Ta=150℃
Ta=125℃
Ta=75℃
1
0.1
FORWARD CURRENT:IF(A)
0.01
0 100 200 300 400 500 600 700 800 900
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
770
760
750
740
730
FORWARD VOLTAGE:VF(mV)
720
300
250
200
150
100
PEAK SURGE
50
FORWARD CURRENT:IFSM(A)
0
1000
100
PEAK SURGE
FORWARD CURRENT:IFSM(A)
10
1 10 100
AVE:735.7mV
VF DISPERSION MAP
AVE:157.0A
IFSM DISRESION MAP
TIME:t(ms)
IFSM-t CHARACTERISTICS
Ifsm
Ifsm
Ta=25℃
Ta=-25℃
Ta=25℃
IF=7.5A
n=30pcs
8.3ms
t
1cyc
100000
10000
1000
100
10
1
REVERSE CURRENT:IR(uA)
0.1
0.01
0 102030405060708090
200
180
160
140
120
100
80
60
40
REVERSE CURRENT:IR(uA)
20
0
30
25
20
15
10
5
RESERVE RECOVERY TIME:trr( ns)
0
100
IM=100mA IF=7.5A
10
TRANSIENT
1
THAERMAL IMPEDANCE:Rth (℃/W)
0.1
0.001 0.01 0.1 1 10 100 1000
Ta=150℃
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
AVE:25.4uA
IR DISPERSION MAP
AVE:12.4ns
trr DISPERSION MAP
1ms
time
300us
TIME:t(s)
Rth-t CHARACTERISTICS
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=25℃
VR=90V
n=30pcs
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
Rth(j-a)
Rth(j-c)
1000
f=1MHz
100
10
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
1
0102030
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
900
890
880
870
860
850
840
830
TERMINALS:Ct(pF)
820
CAPACITANCE BETWEEN
810
800
1000
100
PEAK SURGE
FORWARD CURRENT:IFSM(A)
10
1 10 100
30
25
20
15
10
FORWARD POWER
DISSIPATION:Pf(W)
5
0
0 5 10 15 20 2 5 30
AVE:850.3pF
Ct DISPERSION MAP
Ifsm
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Sin(θ＝180)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
8.3ms
1cyc
DC
Ta=25℃
f=1MHz
VR=0V
n=10pcs
8.3ms
D=1/2
Diodes
5
4
(W)
R
3
2
REVERSE POWER
DISSIPATION:P
1
0
D=1/2
DC
180)
Sin(θ＝
0 102030405060708090
REVERSE VOLTAGE:VR(V)
VR-P
CHARACTERISTICS
R
40
35
30
DC
25
D=1/2
20
15
AVERAGE RECTIFIED
10
FORWARD CURRENT:Io(A)
Sin(θ＝180)
5
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE:Ta(℃)
0A
0V
t
Derating Curveﾞ(Io-Ta)
T
D=t/T
VR=45V
Tj=150℃
RB205T-90
40
Io
35
VR
D=1/2
30
25
20
15
10
AVERAGE RECTIFIED
Sin(θ＝180)
FORWARD CURRENT:Io(A)
5
0
0 25 50 75 100 125 150
0A
0V
DC
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
t
T
D=t/T
VR=45V
Tj=150℃
Io
VR
ELECTROSTATIC
30
25
20
15
10
DISCHARGE TEST ESD(KV)
AVE:11.6kV
5
C=200pF
0
R=0Ω
ESD DISPERSION MAP
No break at 30kV
C=100pF
R=1.5kΩ
Rev.C 3/3
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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