ROHM R6018ANX Technical data

Datasheet

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1/13

R6018ANX

Nch 600V 18A Power MOSFET

Switching Power Supply

a



Features



Application



Outline



Inner circuit



Packaging specifications

V

R

(Max.)

I

DS(on)

P

DSS

D

D

600V

0.27Ω
18A

50W

1) Low on-resistance.

2) Fast switching speed.

3) Gate-source voltage (V

) guaranteed to be ±30V.

GSS

4) Drive circuits can be simple.

5) Parallel use is easy.

6) Pb-free lead plating ; RoHS compliant

TO-220FM

Type

(1) (2) (3)

(1) Gate
(2) Drain
(3) Source

*1 Body Diode

Packing

Bulk
Reel size (mm)
Tape width (mm) ­Basic ordering unit (pcs)

500

-

Taping code
Marking



Absolute maximum ratings (T

Parameter

Drain - Source voltage

Continuous drain current

Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current 9
Power dissipation (Tc = 25°C)
Junction temperature

= 25°C)

T

= 25°C

c

Tc = 100°C

Symbol

V

DSS

*1

I

D

*1

I

D

I

D,pulse

V

GSS

*3

E

AS

*4

E

AR

*3

I

AR

P

D

T

j

Value

600

±18

±8.6

*2

±72
±30

21.6

3.5

50

150

-

R6018ANX

Unit

V
A
A
A

V
mJ
mJ

A

W

°C
Range of storage tem per ature
Reverse diode dv/dt

T

stg

*5

dv/dt

−55 to +150
15

°C

V/ns

2012.01 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

R6018ANX

2/13







Absolute maximum ratings

Parameter

Symbol Conditions Values

Drain - Source voltage slope dv/dt

Thermal resistance

Parameter

Symbol

Thermal resistance, junction - cas e
Thermal resistance, junction - am bient
Soldering temperature, wavesoldering for 10s

Electrical characteristi cs (Ta = 25°C)

R
R

T

V
T

thJC

thJA

sold

= 480V, ID = 18A

DS

= 125°C

j

Min.

-

-

-

Values

Typ.

- 70

-

50

Max.

2.5-

265

Unit

V/ns

Unit

°C/W
°C/W

°C

Parameter

Drain - Source breakdown
voltage

Drain - Source avalanche
breakdown voltage

Zero gate voltage
drain current

Gate - Source leakage curr ent
Gate threshold voltage

Static drain - source
on - state resistance

V

(BR)DSS

V

(BR)DS

I

DSS

I

GSS

V

GS (th)

R

DS(on)

*6

ConditionsSymbol

V

= 0V, ID = 1mA

GS

V

= 0V, ID = 18A

GS

V

= 600V, V

DS

T

= 25°C

j

= 125°C

T

j

V

= ±30V, V

GS

V

= 10V, ID = 1mA

DS

V

= 10V, ID = 9A

GS

= 25°C

T

j

= 125°C

T

j

GS

DS

= 0V

= 0V

Values

Min.

600

-

-

-

-

2.5

Typ.

-

700

0.1

-

-

-

- 0.21 0.27

- 0.42 -

Max.

-

-

100
1000
±100

4.5

Unit

V

V

µA

nA

V

Ω

Gate input resistance

R

f = 1MHz, open drain - 8.4 -

G

Ω

2012.01 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

R6018ANX

3/13

*1 Limited only by maximum temperature allowed.

*2 PW ≤ 10µs, Duty cycle ≤ 1%

DD





Electrical characteristi cs (Ta = 25°C)

Parameter Symbol Conditions

Values

Unit

Min. Typ.

*6

V

g

fs

= 10V, ID = 9.0A,

DS

6.5

13Transconductance

Max.

- S
Input capacitance
Output capacitance
Reverse transfer capacitance

Effective output capacitance,
energy related

Effective output capacitance,
time related

Turn - on delay time
Rise time
Turn - off delay time
Fall time

C
C
C

C

C

t

d(on)

t

t

d(off)

t

iss

oss

rss

o(er)

o(tr)

*6

r

*6

f

Gate Charge characteristics (Ta = 25°C)

V
V

GS

DS

= 0V
= 25V

- 2050 -

-

1400

f = 1MHz - 60 -

- 80 -

V

= 0V

GS

= 0V to 480V

V

DS

- 85

*6

V

*6

⋍ 300V, V

DD

ID = 9A

= 33.3Ω

R

L

R

= 10Ω

G

GS

= 10V

-

-

-

155 310

-

-

-

-37

85

-

65 130

pF

pF

ns

Parameter

Total gate charge
Gate - Source charge
Gate - Drain charge

*3 L ⋍ 500µH, V
*4 L ⋍ 500µH, V

= 50V, RG = 25Ω, starting Tj = 25°C
= 50V, RG = 25Ω, starting Tj = 25°C, f = 10kHz

DD

Symbol

*6

Q

g

*6

Q

gs

*6

Q

gd

V

(plateau)VDD

*5 Reference measurement circuit s Fig .5-1.
*6 Pulsed

Conditions

V

⋍ 300V

DD

ID = 18A

= 10V

V

GS

⋍ 300V, ID = 18A

Values

Min.

-

Typ.

55 -

- 10 -

-

- -

22 -

6.0

Unit

Max.

nC

VGate plateau voltage

2012.01 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

R6018ANX

4/13





Body diode electrical characteristics (Source-Drain) (Ta = 25°C)

Parameter Symbol Conditions

Values

Min. Max.

Typ.

Unit

Inverse diode continuous,
forward current

Inverse diode direct current,
pulsed

Forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current

Peak rate of fall of reverse
recovery current

IS

ISM

V

SD

t

rr

Q

I

rrm

di

rr

rr

*1

*2

*6

*6

*6

*6

/dt

Typical Transient Thermal Characteristics

Symbol Value Unit Unit

T

= 25°C

c

V

= 0V, IS = 18A

GS

= 18A

I

S

di/dt = 100A/µs

T

= 25°C

j

- -

-

-

-

-

-

484

- 6.8 -

- 28

-

730

Symbol Value

18

72

1.5 V

-

ns

µC

- A

-

A/µs

A

A

R

th1

R

th2

R

th3

0.106

0.636

2.13

K/W Ws/K

C

th1

C

th2

C

th3

0.00349

0.0478

0.516

2012.01 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

R6018ANX

5/13

Electrical characteri st ic curves

Fig.1 Power Dissipation Derating Curve

120

100

max. [%]

80

D

/P

D

60

40

20

Power Dissipation : P

0

0 50 100 150 200

Junction Temperature : Tj [°C]

Fig.2 Maximum Safe Operating Area

100

Operation in this
area is limited
by R

10

[A]

D

1

0.1

Drain Current : I

Ta = 25ºC
Single Pulse

0.01

0.1 1 10 100 1000

DS(ON)

PW = 100us

PW = 1ms

PW = 10ms

Drain - Source Voltage : VDS [V]

Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width

(t)

1000

100

0.01

0.001

0.0001

Normalized Transient T hermal Resistance : r

Ta = 25ºC
Single Pulse

10

R
R

th(ch-a)(t)
th(ch-a)

= ｒ

(t)×Rth(ch-a)

= 70ºC/W

1

0.1
top D = 1

D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single

0.0001 0.01 1 100

Pulse Width : PW [s]

2012.01 - Rev.B