Datasheet
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1/13
R6018ANX
Nch 600V 18A Power MOSFET
Switching Power Supply
a
Features
Application
Outline
Inner circuit
Packaging specifications
V
R
(Max.)
I
DS(on)
P
DSS
D
D
600V
0.27Ω
18A
50W
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (V
) guaranteed to be ±30V.
GSS
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
TO-220FM
Type
(1) (2) (3)
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
Packing
Bulk
Reel size (mm)
Tape width (mm) Basic ordering unit (pcs)
500
-
Taping code
Marking
Absolute maximum ratings (T
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current 9
Power dissipation (Tc = 25°C)
Junction temperature
= 25°C)
T
= 25°C
c
Tc = 100°C
Symbol
V
DSS
*1
I
D
*1
I
D
I
D,pulse
V
GSS
*3
E
AS
*4
E
AR
*3
I
AR
P
D
T
j
Value
600
±18
±8.6
*2
±72
±30
21.6
3.5
50
150
-
R6018ANX
Unit
V
A
A
A
V
mJ
mJ
A
W
°C
Range of storage tem per ature
Reverse diode dv/dt
T
stg
*5
dv/dt
−55 to +150
15
°C
V/ns
2012.01 - Rev.B
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Data Sheet
R6018ANX
2/13
Absolute maximum ratings
Parameter
Symbol Conditions Values
Drain - Source voltage slope dv/dt
Thermal resistance
Parameter
Symbol
Thermal resistance, junction - cas e
Thermal resistance, junction - am bient
Soldering temperature, wavesoldering for 10s
Electrical characteristi cs (Ta = 25°C)
R
R
T
V
T
thJC
thJA
sold
= 480V, ID = 18A
DS
= 125°C
j
Min.
-
-
-
Values
Typ.
- 70
-
50
Max.
2.5-
265
Unit
V/ns
Unit
°C/W
°C/W
°C
Parameter
Drain - Source breakdown
voltage
Drain - Source avalanche
breakdown voltage
Zero gate voltage
drain current
Gate - Source leakage curr ent
Gate threshold voltage
Static drain - source
on - state resistance
V
(BR)DSS
V
(BR)DS
I
DSS
I
GSS
V
GS (th)
R
DS(on)
*6
ConditionsSymbol
V
= 0V, ID = 1mA
GS
V
= 0V, ID = 18A
GS
V
= 600V, V
DS
T
= 25°C
j
= 125°C
T
j
V
= ±30V, V
GS
V
= 10V, ID = 1mA
DS
V
= 10V, ID = 9A
GS
= 25°C
T
j
= 125°C
T
j
GS
DS
= 0V
= 0V
Values
Min.
600
-
-
-
-
2.5
Typ.
-
700
0.1
-
-
-
- 0.21 0.27
- 0.42 -
Max.
-
-
100
1000
±100
4.5
Unit
V
V
µA
nA
V
Ω
Gate input resistance
R
f = 1MHz, open drain - 8.4 -
G
Ω
2012.01 - Rev.B
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Data Sheet
R6018ANX
3/13
*1 Limited only by maximum temperature allowed.
*2 PW ≤ 10µs, Duty cycle ≤ 1%
DD
Electrical characteristi cs (Ta = 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ.
*6
V
g
fs
= 10V, ID = 9.0A,
DS
6.5
13Transconductance
Max.
- S
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn - on delay time
Rise time
Turn - off delay time
Fall time
C
C
C
C
C
t
d(on)
t
t
d(off)
t
iss
oss
rss
o(er)
o(tr)
*6
r
*6
f
Gate Charge characteristics (Ta = 25°C)
V
V
GS
DS
= 0V
= 25V
- 2050 -
-
1400
f = 1MHz - 60 -
- 80 -
V
= 0V
GS
= 0V to 480V
V
DS
- 85
*6
V
*6
⋍ 300V, V
DD
ID = 9A
= 33.3Ω
R
L
R
= 10Ω
G
GS
= 10V
-
-
-
155 310
-
-
-
-37
85
-
65 130
pF
pF
ns
Parameter
Total gate charge
Gate - Source charge
Gate - Drain charge
*3 L ⋍ 500µH, V
*4 L ⋍ 500µH, V
= 50V, RG = 25Ω, starting Tj = 25°C
= 50V, RG = 25Ω, starting Tj = 25°C, f = 10kHz
DD
Symbol
*6
Q
g
*6
Q
gs
*6
Q
gd
V
(plateau)VDD
*5 Reference measurement circuit s Fig .5-1.
*6 Pulsed
Conditions
V
⋍ 300V
DD
ID = 18A
= 10V
V
GS
⋍ 300V, ID = 18A
Values
Min.
-
Typ.
55 -
- 10 -
-
- -
22 -
6.0
Unit
Max.
nC
VGate plateau voltage
2012.01 - Rev.B
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Data Sheet
R6018ANX
4/13
Body diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter Symbol Conditions
Values
Min. Max.
Typ.
Unit
Inverse diode continuous,
forward current
Inverse diode direct current,
pulsed
Forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
IS
ISM
V
SD
t
rr
Q
I
rrm
di
rr
rr
*1
*2
*6
*6
*6
*6
/dt
Typical Transient Thermal Characteristics
Symbol Value Unit Unit
T
= 25°C
c
V
= 0V, IS = 18A
GS
= 18A
I
S
di/dt = 100A/µs
T
= 25°C
j
- -
-
-
-
-
-
484
- 6.8 -
- 28
-
730
Symbol Value
18
72
1.5 V
-
ns
µC
- A
-
A/µs
A
A
R
th1
R
th2
R
th3
0.106
0.636
2.13
K/W Ws/K
C
th1
C
th2
C
th3
0.00349
0.0478
0.516
2012.01 - Rev.B
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Data Sheet
R6018ANX
5/13
Electrical characteri st ic curves
Fig.1 Power Dissipation Derating Curve
120
100
max. [%]
80
D
/P
D
60
40
20
Power Dissipation : P
0
0 50 100 150 200
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
100
Operation in this
area is limited
by R
10
[A]
D
1
0.1
Drain Current : I
Ta = 25ºC
Single Pulse
0.01
0.1 1 10 100 1000
DS(ON)
PW = 100us
PW = 1ms
PW = 10ms
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
(t)
1000
100
0.01
0.001
0.0001
Normalized Transient T hermal Resistance : r
Ta = 25ºC
Single Pulse
10
R
R
th(ch-a)(t)
th(ch-a)
= ｒ
(t)×Rth(ch-a)
= 70ºC/W
1
0.1
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
0.0001 0.01 1 100
Pulse Width : PW [s]
2012.01 - Rev.B
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Data Sheet
R6018ANX
6/13
Electrical characteri st ic curves
Fig.4 Avalanche Current vs Inductive Load
12
Ta = 25ºC
V
= 50V , RG = 25Ω
DD
10
[A]
AR
8
6
4
2
Avalanche Current : I
0
0.01 0.1 1 10 100
V
GF
= 10V , V
GR
= 0V
Coil Inductance : L [mH]
Fig.5 Avalanche Power Losses
5000
4500
[W]
4000
AR
3500
3000
2500
2000
1500
1000
500
Avalanche Power Losses : P
1.0E+04 1.0E+05 1.0E+06
Ta = 25ºC
0
Frequency : f [Hz]
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
120
100
max. [%]
80
AS
/ E
AS
60
40
20
0
Avalanche Energy : E
0 25 50 75 100 125 150 175
Junction Temperature : Tj [ºC]
2012.01 - Rev.B
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Data Sheet
R6018ANX
7/13
Electrical characteri st ic curves
5.0V
VGS= 4.5V
10V
5.5V
6.0V
5.5V
6.5V
7.0V
V
GS
= 4.5V
6.5V
10V
5.0V
6.0V
10V
6.0V
5.0V
Fig.7 Typical Output Characteristics(I)
18
15
12
[A]
D
9
6
Drain Current : I
3
0
6.0V
Ta = 25ºC
Pulsed
0 10 20 30 40 50
Drain - Source Voltage : VDS [V]
Fig.8 Typical Output Characteristics(II)
18
Ta = 25ºC
15
12
[A]
D
9
6
Pulsed
Drain Current : I
3
0
0 1 2 3 4 5
Drain - Source Voltage : VDS [V]
10V
8.0V
5.0V
VGS= 4.5V
Fig.9 Tj = 150°C Typical Output
Characteristics(I)
18
15
12
[A]
D
9
6
Drain Current : I
3
0
0 10 20 30 40 50
Drain - Source Voltage : VDS [V]
Ta = 150ºC
Pulsed
5.5V
Fig.10 Tj = 150°C Typical Output
Characteristics(II)
10
Ta = 150ºC
Pulsed
8
[A]
D
6
4
Drain Current : I
2
0
0 1 2 3 4 5
Drain - Source Voltage : VDS [V]
VGS= 4.5V
2012.01 - Rev.B
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Data Sheet
R6018ANX
8/13
Electrical characteri st ic curves
Fig.14 Transconductance vs. Drain Current
Fig.11 Breakdown Voltage
vs. Junction Temperature
900
[V]
850
(BR)DSS
800
750
700
650
600
550
500
-50 0 50 100 150
Drain - Source Breakdown Voltage : V
Junction Temperature : Tj [°C]
Fig.12 Typical Transfer Characteristics
100
V
= 10V
DS
Pulsed
10
Ta = 125ºC
Ta = 75ºC
= 25ºC
[A]
D
0.1
0.01
Drain Current : I
0.001
1
T
a
= -25ºC
T
a
0 1 2 3 4 5 6 7
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage
vs. Junction Temperature
6
V
= 10V
DS
ID = 1mA
5
[V]
GS(th)
4
3
2
1
0
Gate Threshold Voltage : V
-50 0 50 100 150
Junction Temperature : Tj [°C]
100
V
= 10V
DS
Pulsed
10
[S]
fs
1
0.1
Ta = -25ºC
Ta = 25ºC
= 75ºC
T
a
= 125ºC
T
a
Transconductance : g
0.01
0.01 0.1 1 10 100
Drain Current : ID [A]
2012.01 - Rev.B
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Data Sheet
R6018ANX
9/13
Electrical characteri st ic curves
0 5 10 15
Pulsed
0.1 1 10 100
Fig.15 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
0.6
Ta = 25ºC
0.5
0.4
[Ω]
0.3
DS(on)
: R
0.2
0.1
0
Static Drain - Source On-State Resistance
ID = 9A
Gate - Source Voltage : VGS [V]
ID = 18A
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
0.6
V
= 10V
GS
0.5
0.4
[Ω]
0.3
DS(on)
: R
0.2
0.1
Static Drain - Source On-State Resistance
Pulsed
ID = 18A
ID = 9A
0
-50 0 50 100 150
Junction Temperature : Tj [ºC]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
10
VGS= 10V
Pulsed
1
[Ω]
DS(on)
0.1
: R
0.01
Static Drain - Source On-State Resistance
Drain Current : ID [A]
Ta = 125ºC
Ta = 75ºC
= 25ºC
T
a
= -25ºC
T
a
2012.01 - Rev.B
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Data Sheet
R6018ANX
10/13
Electrical characteri st ic curves
iss
C
oss
rss
t
r
f
d(on)
t
d(off)
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
10000
1000
C
100
10
Capacitance : C [pF]
Ta = 25ºC
f = 1MHz
= 0V
V
GS
1
0.1 1 10 100 1000
Drain - Source Voltage : VDS [V]
Fig.19 Coss Stored Energy
14
Ta = 25ºC
12
C
[uJ]
Coss Stored Energy : E
10
OSS
8
6
4
2
0
0 200 400 600
Drain - Source Voltage : VDS [V]
Fig.20 Switching Characteristics
10000
Ta = 25ºC
t
1000
100
10
Switching Time : t [ns]
t
1
0.01 0.1 1 10 100
Drain Current : ID [A]
V
V
RG = 10Ω
Pulsed
⋍ 300V
DD
= 10V
GS
Fig.21 Dynamic Input Characteristics
15
Ta = 25ºC
V
⋍ 300V
DD
[V]
Gate - Source Voltage : V
GS
10
ID = 18A
Pulsed
5
0
0 10 20 30 40 50 60 70
Total Gate Charge : Qg [nC]
2012.01 - Rev.B
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Data Sheet
R6018ANX
11/13
Electrical characteri st ic curves
0.1 1 10 100
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
100
V
= 0V
[A]
S
Inverse Diode Forward Current : I
10
0.1
0.01
GS
Pulsed
1
0 0.5 1 1.5
Ta = 125ºC
Ta = 75ºC
= 25ºC
T
a
= -25ºC
T
a
Source - Drain Voltage : VSD [V]
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
[ns]
rr
100
Ta = 25ºC
di / dt = 100A / us
= 0V
V
GS
Reverse Recovery Time : t
10
Inverse Diode Forward Current : IS [A]
Pulsed
2012.01 - Rev.B
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Data Sheet
R6018ANX
12/13
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform
Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform
2012.01 - Rev.B
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Data Sheet
R6018ANX
13/13
Dimensions (Unit : mm)
Dimension in mm/inches
D
b1
E1
E
e
b
c
F
A2A1
AL
x A
A4
φp
Q
A
MIN MAX MIN MAX
A 16.60 17.60 0.654 0.693
A1 1.80 2.20 0.071 0.087
A2 14.80 15.40 0.583 0.606
A4 6.80 7.20 0.268 0.283
b 0.70 0.85 0.028 0.033
b1 1.10 1.50 0.043 0.059
c 0.70 0.85 0.028 0.033
D 9.90 10.30 0.39 0.406
E 4.40 4.80 0.173 0.189
e
E1 2.70 3.00 0.106 0.118
F 2.80 3.20 0.11 0.126
L 11.50 12.50 0.453 0.492
p 3.00 3.40 0.118 0.134
Q 2.10 3.10 0.083 0.122
x - 0.381 - 0.015
2.54
0.10
DIM
MILIMETERS
INCHES
TO-220FM
2012.01 - Rev.B
Notes
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consent of ROHM Co.,Ltd.
The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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Please be sure to implement in your equipment using the Products safety measures to guard
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