Datasheet R6015FNX Datasheet (ROHM)

Data Sheet

10V Drive Nch MOSFET

R6015FNX

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

TO -220F M

10.0

φ

3.2

4.5

2.8

Features

1) Fast reverse recovery time (t

2) Low on-resistance.

)

rr

15.0

14.0

3) Fast switching speed.

4) Gate-source voltage 　 V

garanteed to be ±30V .

GSS

5) Drive circuits can be simple.

6) Parallel use is easy.

Application

Switching  Inner circuit

Packaging specifications

Package Bulk

Type

R6015FNX 

Code Basic ordering unit (pieces) 500

(1) Gate (2) Drain (3) Source

Absolute maximum ratings (Ta  25°C)

Parameter

Drain-source voltage V Gate-source voltage V

Drain current

Source current (Body Diode)

Continuous I

Pulsed I

Continuous I

Pulsed I

Avalanche Current I

Avalanche Energy E

Symbol Limits Unit

*3

*1

*3

*1

*2

600 V

30 V

15 A

60 A

15 A

60 A

7.5 A

15 mJ

DSS

GSS

D

DP

S

SP

AS

Power dissipation (Tc=25℃)PD50 W

Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 L≒500H, V

*3 Limited only by maximum temperature allowed.

=50V, Rg=25, starting Tch=25°C

DD

12.0

8.02.5

1.3

(1) (3)(2)

1.2

0.8

2.54 2.62.54

(2)(3)(1)

1 BODY DIODE

0.75

∗1

 Thermal resistance

Parameter

Symbol Limits Unit

Channel to Case Rth (ch-c) 2.5 C / W

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2011.08 - Rev.A

Data Sheet

R6015FNX

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V Static drain-source on-state resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=±30V, VDS=0V

600 - - V ID=1mA, VGS=0V

- - 100 AVDS=600V, VGS=0V

3-5VV

- 0.27 0.35

*

l 4.5 - - S ID=7.5A, VDS=10V



- 1660 - pF VDS=25V

- 1110 - pF VGS=0V

- 45 - pF f=1MHz

- 38 - ns ID=7.5A, VDD 300V

*

- 45 - ns VGS=10V

*

- 120 - ns RL=40

*

- 35 - ns RG=10

*

- 42 - nC ID=15A,

*

- 12 - nC VDD 300V

*

- 20 - nC VGS=10V

*

=10V, ID=1mA

DS

ID=7.5A, VGS=10V

Body diode characteristics (Source-Drain) (Ta = 25C)

Symbol Min. Typ. Max. Unit

Forward Voltage V

Reverse Recovery Time t

*Pulsed

SD

rr

*

- - 1.5 V Is=15A, VGS=0V

60 90 120 ns

*

ConditionsParameter

Is=15A, di/dt=100A/s

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2011.08 - Rev.A

Data Sheet

R6015FNX

Electrical characteristic curves (Ta=25C)

0

1

2

3

4

5

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=5.0V

VGS=10.0V

VGS=7.0V

VGS=5.5V

VGS=6.0V

VGS=8.0V

VGS=6.5V

Ta=25°C Pulsed

0.001

0.01

0.1

1

10

100

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.3 Typical Transfer Characteristics

VDS=10V pulsed

Ta=125°C

Ta=75°C Ta=25°C

Ta=-25°C

2

3

4

5

6

-50 0 50 100 150

Gate Threshold Voltage : V

GS(th)

[V]

Channel Temperature : Tch [℃]

Fig.4 Gate Threshold Voltage vs. Channel Temperature

VDS=10V I

D

=1mA

pulsed

0

5

10

15

20

25

30

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=10.0V

VGS=6.0V

VGS=6.5V

VGS=5.0V

VGS=5.5V

VGS=7.0V

VGS=8.0V

Ta=25°C Pulsed

0.1

1

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[Ω]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

-50 0 50 100 150

Static Drain-Source On-State Resistance : R

DS(on)

[Ω]

Channel Temperature : Tch [℃]

Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature

VGS=10V pulsed

ID=7.5A

ID=15A

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2011.08 - Rev.A

Data Sheet

R6015FNX

0.01

0.1

1

10

100

0.01 0.1 1 10 100

Forward Transfer Admittance

Y

fs

[S]

Drain Current : ID [A]

Fig.7 Forward Transfer Admittance vs. Drain Current

VDS=10V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5 2.0

Source Current : Is [A]

Source-Drain Voltage : VSD [V]

Fig.8 Source Current vs. Source-Drain Voltage

VGS=0V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

0

0.2

0.4

0.6

0.8

1

0 2 4 6 8 10 12 14 16 18 20

Static Drain-Source On-State Resistance

R

DS(on)

[Ω]

Gate-Source Voltage : VGS [V]

Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

ID=15A

ID=7.5A

Ta=25°C Pulsed

1

10

100

1000

10000

0.01 0.1 1 10 100

Switching Time : t [ns]

Drain Current : ID [A]

Fig.10 Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

VDD≒300V V

GS

=10V

R

G

=10Ω

T

a

=25°C

Pulsed

0

2

4

6

8

10

12

0 5 10 15 20 25 30 35 40 45 50

Gate-Source Voltage : V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.11 Dynamic Input Characteristics

Ta=25°C VDD=300V I

D

=15A

Pulsed

1

10

100

1000

10000

0.01 0.1 1 10 100 1000

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.12 Typical Capacitance vs. Drain-Source Voltage

T

a

=25

°C f=1MHz VGS=0V

C

iss

C

oss

C

rss

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2011.08 - Rev.A

Data Sheet

R6015FNX

10

100

1000

0 1 10 100

Reverse Recovery Time : t

rr

[ns]

Source Current : IS [A]

Fig.13 Reverse Recovery Time vs. Source Current

Ta=25°C V

gs

=0V

di/dt=100A/us Pulsed

0.01

0.1

1

10

100

0.1 1 10 100 1000

Drain Current : I

D

[ A ]

Drain-Source Voltage : VDS [ V ]

Fig.14 Maximum Safe Operating Area

T

a

=25°C

Single Pulse

Operation in this area

is limited by R

DS(on)

(VGS = 10V)

PW = 100μs

PW = 1ms

PW = 10ms

0.0001

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r（t）

Pulse width : Pw (s)

Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width

T

a

=25°C

Single Pulse

Rth

(ch-a)

=42.6°C/W

Rth

(ch-a)

(t)=r(t)×Rth

(ch-a)

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2011.08 - Rev.A

Data Sheet

R6015FNX

F

it

%

V V

F

S

Fig.2-2 Gate Charge Waveform

V

 Measurement circuits

VGS

RG

ig.1-1 Switching Time Measurement Circu

V

GS

I

G(Const.)

ig.2-1 Gate Charge Measurement Circuit

D.U.T.

D

I

RL

VDD

D

I

R

L

V

DD

VDS

Pulse width

50%

10%

GS DS

10% 10%

90%

50%

90% 90

t

d(on)

t

on

t

d(off)

t

r

t

f

t

off

Fig.1-2 Switching Waveforms

V

G

V

D

GS

QgsQ

Q

g

gd

Charge

V

GS

R

G

D.U.T.

I

AS

L

DD

V

Fig.3-1 Avalanche Measurement Circuit

V

DS

V(BR)DSS

IAS

VDD

EAS =

1

L

2

V(BR)DSS

2

I

AS

V

(BR)DSS

-

VDD

Fig.3-2 Avalanche Waveform

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2011.08 - Rev.A

Notes

Notice

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Datasheet R6015FNX Datasheet (ROHM)

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