Datasheet R6015ANZ Datasheet (ROHM)

Data Sheet

10V Drive Nch MOSFET

R6015ANZ

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Low input capacitance.

3) High ESD.

 Application

Switching

 Packaging specifications  Inner circuit

Package Bulk

Type

Code ­Basic ordering unit (pieces) 360

R6015ANZ 

TO-3PF

(1) Gate
(2) Drain
(3) Source

26.5

16.5

14.5

2.0

14.8

15.5

4.5

2.0

0.75

(1) (2) (3)

φ3.6

2.5

5.455.45

0.44

10.0

16.5

5.5

3.0

3.5

2.0

3.0

0.9

∗1

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Avalanche current

Avalanche energy

Power dissipation P

Channel temperature T

Range of storage temperature T

*1 Pw10s, Duty cycle1%

*2 L 500H, V

*3 Limited only by maximum channel temperature allowed.

=25°C

*4 T

C

=50V, RG=25, Tch=25°C

DD

 Thermal resistance

Parameter

Symbol Limits Unit

Channel to Case Rth

* TC=25°C

I

E

DSS

GSS

*3

D

*1

DP

*3

S

*1

SP

*2

AS

*2

AS

*4

D

ch

55 to 150 C

stg

*

(ch-c)

600 V

30 V

15 A

60 A

15 A

60 A

7.5 A

15 mJ

110 W

150 C

1.13 C / W

(1) Gate
(2) Drain
(3) Source

(1) (3)(2)

1 BODY DIODE

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2011.10 - Rev.A

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Data Sheet

R6015ANZ

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=30V, VDS=0V

600 - - V ID=1mA, VGS=0V

- - 100 AVDS=600V, VGS=0V

2.95 - 4.15 V VDS=10V, ID=1mA

*

-

*

l 4.5 - - S VDS=10V, ID=7.5A

0.23 0.3

- 1700 - pF VDS=25V

- 1120 - pF VGS=0V

- 80 - pF f=1MHz

- 50 - ns VDD 300V, ID=7.5A

*

- 50 - ns VGS=10V

*

- 150 - ns RL=40

*

- 60 - ns RG=10

*

- 50 - nC VDD 300V

*

-8-nCI

*

- 20 - nC VGS=10V

*

ID=7.5A, VGS=10V



=15A

D

Body diode characteristics (Source-Drain)

Parameter Conditions

Forward voltage V

*パルス

Symbol Min. Typ. Max. Unit

*

SD

- - 1.5 V IS=15A, VGS=0V

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2011.10 - Rev.A

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Data Sheet

R6015ANZ

Electrical characteristic curves

0.0001

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r（t）

Pulse width : Pw (s)

Fig.1 Normalized Transient Thermal Resistance

v.s. Pulse Width

Ta=25℃
Single Pulse

Tester : TMR-850

Rth(ch

-a)=28.6℃/W

Rth(ch

-a)(t)=r(t)×Rth(ch-

a)

0

10

20

30

40

0 10 20 30 40 50

VGS= 4.5V

VGS= 5.0V

VGS= 5.5V

VGS= 6.0V

VGS= 6.5V

VGS= 8.0V

VGS= 7.0V

VGS= 10.0V

Ta=25℃
pulsed

Fig.2: Typical output characteristics(Ⅰ)

DRAIN-SOURCE VOLTAGE: VDS (V)

DRAIN CURRENT: I

D

(A)

0

5

10

15

20

0 1 2 3 4 5

VGS= 4.5V

VGS= 5.0V

VGS= 5.5V

VGS= 6.0V

VGS= 6.5V

VGS= 10.0V
VGS= 8.0V
VGS= 7.0V

Ta=25℃
pulsed

Fig.3: Typical output characteristics(Ⅱ)

DRAIN-SOURCE VOLTAGE: VDS (V)

DRAIN CURRENT: I

D

(A)

0.01

0.1

1

10

100

0 1 2 3 4 5 6 7

VDS= 10V
Pulsed

Ta=125℃

Ta= 75℃
Ta= 25℃

Ta= -25℃

Fig.4 Typical Transfer Characteristics

GATE-SOURCE VOLTAGE : VGS (V)

DRAIN CURRENT : I

D

(A)

Fig.5 Gate Threshold Voltage

vs. Channel Temperature

0

1

2

3

4

5

6

-50 0 50 100 150

VDS= 10V

ID= 1mA

CHANNEL TEMPERATURE: Tch (°C)

GATE THRESHOLD VOLTAGE: V

GS(th)

(V)

0.01

0.1

1

10

0.001 0.1 10

VGS= 10V
Pulsed

Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current

DRAIN CURRENT : ID (A)

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS(on)

(Ω)

0

0.1

0.2

0.3

0.4

0.5

0.6

0 5 10 15

ID=7.5A

ID=15A

Ta=25℃
pulsed

Fig.7 Static Drain-Source On-State

Resistance vs. Gate Source Voltage

GATE-SOURCE VOLTAGE : VGS (V)

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS(on)

(Ω)

Fig.8 Static Drain-Source On-State

Resistance vs. Channel Temperature

0

0.1

0.2

0.3

0.4

0.5

0.6

-50 0 50 100 150

VGS= 10V

Pulsed

ID= 7.5A

ID= 15A

CHANNEL TEMPERATURE: Tch (°C)

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS(on)

(Ω)

0.001

0.01

0.1

1

10

100

0.001 0.01 0.1 1 10 100

VDS= 10V

Pulsed

Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃

Fig.9 Forward Transfer Admittance

vs. Drain Current

DRAIN CURRENT : ID (A)

FORWARD TRANSFER ADMITTANCE :

|Yfs| (S)

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Data Sheet

R6015ANZ

0.01

0.1

1

10

100

0 0.5 1 1.5

VGS= 0V
Pulsed

Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃

Fig.10 Source Current vs.

Sourse-Drain Voltage

SOURCE-DRAIN VOLTAGE : VSD (V)

SOURCE CURRENT : I

S

(A)

1

10

100

1000

10000

0.01 0.1 1 10 100 1000

C

iss

C

oss

C

rss

Ta= 25℃
f= 1MHz

VGS= 0V

Fig.11 Typical Capacitance vs.

Drain-Source Voltage

DRAIN-SOURCE VOLTAGE : VDS (V)

CAPACITANCE : C (pF)

0

5

10

15

0 10 20 30 40 50 60 70

Ta= 25℃
VDD= 300V

ID= 15A
RG= 10Ω
Pulsed

Fig.12 Dynamic Input Characteristics

TOTAL GATE CHARGE : Qg (nC)

GATE-SOURCE VOLTAGE : V

GS

(V)

10

100

1000

0.1 1 10 100

Ta= 25℃
di / dt= 100A / μs

VGS= 0V
Pulsed

Fig.13 Reverse Recovery Time

vs.Source Current

SOURCE CURRENT : IS (A)

REVERSE RECOVERY TIME: t

rr

(ns)

1

10

100

1000

10000

0.01 0.1 1 10 100

t

r

t

f

t

d(on)

t

d(off)

Ta= 25℃
VDD= 300V

VGS= 10V
RG= 10Ω
Pulsed

Fig.14 Switching Characteristics

DRAIN CURRENT : ID (A)

SWITCHING TIME : t (ns)

4/5

2011.10 - Rev.A

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Data Sheet

R6015ANZ

F

it

%

V
V

Fig.2-2 Gate Charge Waveform

V

F

S

 Measurement circuits

V

GS

R

G

ig.1-1 Switching Time Measurement Circu

V

GS

I

G(Const.)

R

G

ig.2-1 Gate Charge Measurement Circuit

D.U.T.

D.U.T.

D

I

R

L

V

DD

D

I

R

L

V

DD

Pulse width

V

DS

50%

10%

GS
DS

10% 10%

90%

50%

90% 90

t

d(on)

t

on

t

d(off)

t

r

t

f

t

off

Fig.1-2 Switching Waveforms

V

G

V

D

GS

QgsQ

Q

g

gd

Charge

V

GS

R

G

D.U.T.

I

AS

L

DD

V

Fig.3-1 Avalanche Measurement Circuit

V

DS

V(BR)DSS

IAS

VDD

EAS =

1

L

2

V(BR)DSS

2

I

AS

V

(BR)DSS

-

VDD

Fig.3-2 Avalanche Waveform

5/5

2011.10 - Rev.A

Notes

Notice

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