Datasheet
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1/13
R6015ANX
Nch 600V 15A Power MOSFET
Switching Power Supply
a
Features
50W
Application
Outline
Inner circuit
Packaging specifications
600V
0.3
15A
DSS
DPD
R
DS(on)
V
(Max.)
Ω
I
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (V
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
) guaranteed to be ±30V.
GSS
TO-220FM
Type
(1) (2) (3)
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
Packing
Bulk
Reel size (mm)
Tape width (mm) Basic ordering unit (pcs)
500
-
Taping code
Marking
Absolute maximum ratings (T
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current 7.5
Power dissipation (Tc = 25°C)
Junction temperature
= 25°C)
T
= 25°C
c
Tc = 100°C
Symbol
V
DSS
*1
I
D
*1
I
D
I
D,pulse
V
GSS
*3
E
AS
*4
E
AR
*3
I
AR
P
D
T
j
Value
600
±15
±7.0
*2
±60
±30
15
3.5
50
150
-
R6015ANX
Unit
V
A
A
A
V
mJ
mJ
A
W
°C
Range of storage tem per ature
Reverse diode dv/dt
T
stg
*5
dv/dt
−55 to +150
15
°C
V/ns
2012.02 - Rev.B
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Data Sheet
R6015ANX
2/13
Absolute maximum ratings
Parameter
Symbol Conditions Values
Drain - Source voltage slope dv/dt
Thermal resistance
Parameter
Symbol
Thermal resistance, junction - cas e
Thermal resistance, junction - am bient
Soldering temperature, wavesoldering for 10s
Electrical characteristi cs (Ta = 25°C)
R
R
T
V
T
thJC
thJA
sold
= 480V, ID = 15A
DS
= 125°C
j
Min.
-
-
-
Values
Typ.
- 70
-
50
Max.
2.5-
265
Unit
V/ns
Unit
°C/W
°C/W
°C
Parameter
Drain - Source breakdown
voltage
Drain - Source avalanche
breakdown voltage
Zero gate voltage
drain current
Gate - Source leakage curr ent
Gate threshold voltage
Static drain - source
on - state resistance
V
(BR)DSS
V
(BR)DS
I
DSS
I
GSS
V
GS (th)
R
DS(on)
*6
ConditionsSymbol
V
= 0V, ID = 1mA
GS
V
= 0V, ID = 15A
GS
V
= 600V, V
DS
T
= 25°C
j
= 125°C
T
j
V
= ±30V, V
GS
V
= 10V, ID = 1mA
DS
V
= 10V, ID = 7.5A
GS
= 25°C
T
j
= 125°C
T
j
GS
DS
= 0V
= 0V
Values
Min.
600
-
-
-
-
2.5
Typ.
-
700
0.1
-
-
-
- 0.23 0.3
- 0.46 -
Max.
-
-
100
1000
±100
4.5
Unit
V
V
µA
nA
V
Ω
Gate input resistance
R
f = 1MHz, open drain - 10.5 -
G
Ω
2012.02 - Rev.B
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Data Sheet
R6015ANX
3/13
*1 Limited only by maximum temperature allowed.
*2 PW ≤ 10µs, Duty cycle ≤ 1%
DD
Electrical characteristi cs (Ta = 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ.
*6
V
g
fs
= 10V, ID = 7.5A
DS
4.5
11Transconductance
Max.
- S
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn - on delay time
Rise time
Turn - off delay time
Fall time
C
C
C
C
C
t
d(on)
t
t
d(off)
t
iss
oss
rss
o(er)
o(tr)
*6
r
*6
f
Gate Charge characteristics (Ta = 25°C)
V
V
GS
DS
= 0V
= 25V
- 1700 -
-
1120
f = 1MHz - 80 -
- 79 -
V
= 0V
GS
= 0V to 480V
V
DS
- 80
*6
V
*6
⋍ 300V, V
DD
ID = 7.5A
= 40Ω
R
L
R
= 10Ω
G
GS
= 10V
-
-
-
150 300
-
-
-
-50
50
-
60 120
pF
pF
ns
Parameter
Total gate charge
Gate - Source charge
Gate - Drain charge
*3 L ⋍ 500µH, V
*4 L ⋍ 500µH, V
= 50V, RG = 25Ω, starting Tj = 25°C
= 50V, RG = 25Ω, starting Tj = 25°C, f = 10kHz
DD
Symbol
*6
Q
g
*6
Q
gs
*6
Q
gd
V
(plateau)VDD
*5 Reference measurement circuit s Fig .5-1.
*6 Pulsed
Conditions
V
⋍ 300V
DD
ID = 15A
= 10V
V
GS
⋍ 300V, ID = 15A
Values
Min.
-
Typ.
50 -
- 8 -
-
- -
20 -
6.0
Unit
Max.
nC
VGate plateau voltage
2012.02 - Rev.B
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Data Sheet
R6015ANX
4/13
Body diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter Symbol Conditions
Values
Min. Max.
Typ.
Unit
Inverse diode continuous,
forward current
Inverse diode direct current,
pulsed
Forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
IS
ISM
V
SD
t
rr
Q
I
rrm
di
rr
rr
*1
*2
*6
*6
*6
*6
/dt
Typical Transient Thermal Characteristics
Symbol Value Unit Unit
T
= 25°C
c
V
= 0V, IS = 15A
GS
= 15A
I
S
di/dt = 100A/µs
T
= 25°C
j
- -
-
-
-
-
-
482
- 6.3 -
- 26
-
700
Symbol Value
15
60
1.5 V
-
ns
µC
- A
-
A/µs
A
A
R
th1
R
th2
R
th3
0.117
0.662
2.14
K/W Ws/K
C
th1
C
th2
C
th3
0.00318
0.0429
0.507
2012.02 - Rev.B
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Data Sheet
R6015ANX
5/13
Electrical characteri st ic curves
Fig.1 Power Dissipation Derating Curve
120
100
max. [%]
D
80
/P
D
60
40
20
Power Dissipation : P
0
0 50 100 150 200
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
100
Operation in this
area is limited
by R
10
[A]
D
1
0.1
Drain Current : I
0.01
0.1 1 10 100 1000
DS(ON)
PW = 100us
PW = 1ms
PW = 10ms
Ta = 25ºC
Single Pulse
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
(t)
1000
Ta = 25ºC
100
Single Pulse
R
R
10
1
0.1
0.01
0.001
0.0001
0.0001 0.01 1 100
Normalized Transient T hermal Resistance : r
th(ch-a)(t)
th(ch-a)
= ｒ
(t)×Rth(ch-a)
= 70ºC/W
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
Pulse Width : PW [s]
2012.02 - Rev.B
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Data Sheet
R6015ANX
6/13
Electrical characteri st ic curves
Fig.4 Avalanche Current vs Inductive Load
10
Ta = 25ºC
9
V
= 50V , RG = 25Ω
DD
= 10V , V
V
GF
8
[A]
7
AR
6
5
4
3
2
Avalanche Current : I
1
0
0.01 0.1 1 10 100
= 0V
GR
Coil Inductance : L [mH]
Fig.5 Avalanche Power Losses
5000
4500
[W]
4000
AR
3500
3000
2500
2000
1500
1000
500
Avalanche Power Losses : P
1.0E+04 1.0E+05 1.0E+06
Ta = 25ºC
0
Frequency : f [Hz]
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
120
100
max. [%]
AS
80
/ E
AS
60
40
20
Avalanche Energy : E
0
0 25 50 75 100 125 150 175
Junction Temperature : Tj [ºC]
2012.02 - Rev.B
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Data Sheet
R6015ANX
7/13
Electrical characteri st ic curves
5.0V
VGS= 4.5V
6.0V
6.5V
5.5V
5.0V
6.0V
5.5V
7.0V
8.0V
10V
GS
6.0V
VGS= 4.5V
5.0V
6.0V
Fig.7 Typical Output Characteristics(I)
10V
15
8.0V
7.0V
12
[A]
9
D
6
Drain Current : I
3
0
0 5 10 15 20
Drain - Source Voltage : VDS [V]
Ta = 25ºC
Pulsed
Fig.8 Typical Output Characteristics(II)
15
Ta = 25ºC
Pulsed
6.5V
10
[A]
D
5
Drain Current : I
VGS= 4.5V
0
0 1 2 3 4 5
Drain - Source Voltage : VDS [V]
Fig.9 Tj = 150°C Typical Output
Characteristics(I)
15
10V
12
9
[A]
D
6
3
Drain Current : I
0
0 5 10 15 20
Drain - Source Voltage : VDS [V]
V
5.5V
Ta = 150ºC
Pulsed
= 4.5V
Fig.10 Tj = 150°C Typical Output
Characteristics(II)
15
Ta = 150ºC
Pulsed
12
[A]
9
D
6
3
Drain Current : I
0
0 1 2 3 4 5
Drain - Source Voltage : VDS [V]
10V
2012.02 - Rev.B
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Data Sheet
R6015ANX
8/13
Electrical characteri st ic curves
0 1 2 3 4 5 6 7
Fig.11 Breakdown Voltage
vs. Junction Temperature
[V]
900
850
(BR)DSS
800
750
700
650
600
550
500
Drain - Source Breakdown Voltage : V
-50 0 50 100 150
Junction Temperature : Tj [°C]
Fig.12 Typical Transfer Characteristics
100
V
= 10V
DS
Pulsed
[A]
D
Drain Current : I
10
1
0.1
0.01
Ta= 125ºC
Ta= 75ºC
= 25ºC
T
a
T
= −25ºC
a
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage
vs. Junction Temperature
6
V
= 10V
DS
[V]
Gate Threshold Voltage : V
5
GS(th)
4
3
2
1
0
ID = 1mA
-50 0 50 100 150
Junction Temperature : Tj [°C]
Fig.14 Transconductance vs. Drain Current
100
V
= 10V
DS
Pulsed
10
[S]
fs
1
0.1
Ta = -25ºC
Ta = 25ºC
= 75ºC
T
0.01
Transconductance : g
0.001
0.001 0.01 0.1 1 10 100
Drain Current : ID [A]
a
= 125ºC
T
a
2012.02 - Rev.B
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Data Sheet
R6015ANX
9/13
Electrical characteri st ic curves
Pulsed
Fig.15 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
0.6
Ta = 25ºC
0.5
0.4
[Ω]
0.3
DS(on)
0.2
: R
0.1
0
Static Drain - Source On-State Resistance
0 5 10 15
ID = 7.5A
Gate - Source Voltage : VGS [V]
ID = 15A
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
0.6
V
= 10V
GS
Pulsed
0.5
0.4
[Ω]
0.3
DS(on)
: R
0.2
0.1
0
Static Drain - Source On-State Resistance
-50 0 50 100 150
Junction Temperature : Tj [ºC]
ID = 15A
ID = 7.5A
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
10
V
= 10V
GS
Pulsed
1
[Ω]
DS(on)
0.1
: R
0.01
0.001 0.1 10
Static Drain - Source On-State Resistance
Drain Current : ID [A]
Ta = 125ºC
Ta = 75ºC
= 25ºC
T
a
Ta = −25ºC
2012.02 - Rev.B
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Data Sheet
R6015ANX
10/13
Electrical characteri st ic curves
C
iss
oss
rss
GS
t
r
t
f
t
d(on)
t
d(off)
0 10 20 30 40 50 60 70
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
10000
1000
C
100
10
Capacitance : C [pF]
Ta = 25ºC
f = 1MHz
V
= 0V
1
0.01 0.1 1 10 100 1000
Drain - Source Voltage : VDS [V]
C
Fig.19 Coss Stored Energy
14
Ta = 25ºC
12
[uJ]
10
OSS
8
6
4
2
Coss Stored Energy : E
0
0 200 400 600
Drain - Source Voltage : VDS [V]
Fig.20 Switching Characteristics
10000
1000
100
10
Switching Time : t [ns]
1
0.01 0.1 1 10 100
Drain Current : ID [A]
Ta = 25ºC
V
⋍ 300V
DD
V
= 10V
GS
= 10Ω
R
G
Pulsed
Fig.21 Dynamic Input Characteristics
15
Ta = 25ºC
V
⋍ 300V
DD
[V]
GS
10
Gate - Source Voltage : V
ID = 15A
RG = 10Ω
Pulsed
5
0
Total Gate Charge : Qg [nC]
2012.02 - Rev.B
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Data Sheet
R6015ANX
11/13
Electrical characteri st ic curves
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
100
V
= 0V
GS
[A]
Inverse Diode Forward Current : I
S
10
1
0.1
0.01
Pulsed
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = −25ºC
0 0.5 1 1.5
Source - Drain Voltage : VSD [V]
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
1,000
[ns]
rr
100
Ta=25ºC
di/dt=100A/µs
=0V
V
GS
Pulsed
Reverse Recovery Time : t
10
0.1 1 10 100
Inverse Diode Forward Current : IS [A]
2012.02 - Rev.B
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Data Sheet
R6015ANX
12/13
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform
Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform
2012.02 - Rev.B
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Data Sheet
R6015ANX
13/13
Dimensions (Unit : mm)
Dimension in mm/inches
D
b1
E1
E
e
b
c
F
A2
A1
A
L
x
A
A4
φp
Q
A
MIN MAX MIN MAX
A 16.60 17.60 0.654 0.693
A1 1.80 2.20 0.071 0.087
A2 14.80 15.40 0.583 0.606
A4 6.80 7.20 0.268 0.283
b 0.70 0.85 0.028 0.033
b1 1.10 1.50 0.043 0.059
c 0.70 0.85 0.028 0.033
D 9.90 10.30 0.39 0.406
E 4.40 4.80 0.173 0.189
e
E1 2.70 3.00 0.106 0.118
F 2.80 3.20 0.11 0.126
L 11.50 12.50 0.453 0.492
p 3.00 3.40 0.118 0.134
Q 2.10 3.10 0.083 0.122
x - 0.381 - 0.015
2.54
0.10
DIM
MILIMETERS
INCHES
TO-220FM
2012.02 - Rev.B
Notes
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consent of ROHM Co.,Ltd.
The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specied in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, ofce-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specied in this document are not designed to be radiation tolerant.
While ROHM always makes effor ts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injur y, re or any other damage caused in the event of the
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shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
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The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
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