ROHM R6015ANX Technical data

Datasheet

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1/13

R6015ANX

Nch 600V 15A Power MOSFET

Switching Power Supply

a



Features

50W



Application



Outline



Inner circuit



Packaging specifications

600V

0.3

15A

DSS

DPD

R

DS(on)

V

(Max.)

Ω

I

1) Low on-resistance.

2) Fast switching speed.

3) Gate-source voltage (V

4) Drive circuits can be simple.

5) Parallel use is easy.

6) Pb-free lead plating ; RoHS compliant

) guaranteed to be ±30V.

GSS

TO-220FM

Type

(1) (2) (3)

(1) Gate
(2) Drain
(3) Source

*1 Body Diode

Packing

Bulk
Reel size (mm)
Tape width (mm) ­Basic ordering unit (pcs)

500

-

Taping code
Marking



Absolute maximum ratings (T

Parameter

Drain - Source voltage

Continuous drain current

Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current 7.5
Power dissipation (Tc = 25°C)
Junction temperature

= 25°C)

T

= 25°C

c

Tc = 100°C

Symbol

V

DSS

*1

I

D

*1

I

D

I

D,pulse

V

GSS

*3

E

AS

*4

E

AR

*3

I

AR

P

D

T

j

Value

600

±15

±7.0

*2

±60
±30

15

3.5

50

150

-

R6015ANX

Unit

V
A
A
A

V
mJ
mJ

A

W

°C
Range of storage tem per ature
Reverse diode dv/dt

T

stg

*5

dv/dt

−55 to +150
15

°C

V/ns

2012.02 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

R6015ANX

2/13







Absolute maximum ratings

Parameter

Symbol Conditions Values

Drain - Source voltage slope dv/dt

Thermal resistance

Parameter

Symbol

Thermal resistance, junction - cas e
Thermal resistance, junction - am bient
Soldering temperature, wavesoldering for 10s

Electrical characteristi cs (Ta = 25°C)

R
R

T

V
T

thJC

thJA

sold

= 480V, ID = 15A

DS

= 125°C

j

Min.

-

-

-

Values

Typ.

- 70

-

50

Max.

2.5-

265

Unit

V/ns

Unit

°C/W
°C/W

°C

Parameter

Drain - Source breakdown
voltage

Drain - Source avalanche
breakdown voltage

Zero gate voltage
drain current

Gate - Source leakage curr ent
Gate threshold voltage

Static drain - source
on - state resistance

V

(BR)DSS

V

(BR)DS

I

DSS

I

GSS

V

GS (th)

R

DS(on)

*6

ConditionsSymbol

V

= 0V, ID = 1mA

GS

V

= 0V, ID = 15A

GS

V

= 600V, V

DS

T

= 25°C

j

= 125°C

T

j

V

= ±30V, V

GS

V

= 10V, ID = 1mA

DS

V

= 10V, ID = 7.5A

GS

= 25°C

T

j

= 125°C

T

j

GS

DS

= 0V

= 0V

Values

Min.

600

-

-

-

-

2.5

Typ.

-

700

0.1

-

-

-

- 0.23 0.3

- 0.46 -

Max.

-

-

100
1000
±100

4.5

Unit

V

V

µA

nA

V

Ω

Gate input resistance

R

f = 1MHz, open drain - 10.5 -

G

Ω

2012.02 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

R6015ANX

3/13

*1 Limited only by maximum temperature allowed.

*2 PW ≤ 10µs, Duty cycle ≤ 1%

DD





Electrical characteristi cs (Ta = 25°C)

Parameter Symbol Conditions

Values

Unit

Min. Typ.

*6

V

g

fs

= 10V, ID = 7.5A

DS

4.5

11Transconductance

Max.

- S
Input capacitance
Output capacitance
Reverse transfer capacitance

Effective output capacitance,
energy related

Effective output capacitance,
time related

Turn - on delay time
Rise time
Turn - off delay time
Fall time

C

C

C

C

C

t

d(on)

t

t

d(off)

t

iss

oss

rss

o(er)

o(tr)

*6

r

*6

f

Gate Charge characteristics (Ta = 25°C)

V
V

GS

DS

= 0V
= 25V

- 1700 -

-

1120

f = 1MHz - 80 -

- 79 -

V

= 0V

GS

= 0V to 480V

V

DS

- 80

*6

V

*6

⋍ 300V, V

DD

ID = 7.5A

= 40Ω

R

L

R

= 10Ω

G

GS

= 10V

-

-

-

150 300

-

-

-

-50

50

-

60 120

pF

pF

ns

Parameter

Total gate charge
Gate - Source charge
Gate - Drain charge

*3 L ⋍ 500µH, V
*4 L ⋍ 500µH, V

= 50V, RG = 25Ω, starting Tj = 25°C
= 50V, RG = 25Ω, starting Tj = 25°C, f = 10kHz

DD

Symbol

*6

Q

g

*6

Q

gs

*6

Q

gd

V

(plateau)VDD

*5 Reference measurement circuit s Fig .5-1.
*6 Pulsed

Conditions

V

⋍ 300V

DD

ID = 15A

= 10V

V

GS

⋍ 300V, ID = 15A

Values

Min.

-

Typ.

50 -

- 8 -

-

- -

20 -

6.0

Unit

Max.

nC

VGate plateau voltage

2012.02 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

R6015ANX

4/13





Body diode electrical characteristics (Source-Drain) (Ta = 25°C)

Parameter Symbol Conditions

Values

Min. Max.

Typ.

Unit

Inverse diode continuous,
forward current

Inverse diode direct current,
pulsed

Forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current

Peak rate of fall of reverse
recovery current

IS

ISM

V

SD

t

rr

Q

I

rrm

di

rr

rr

*1

*2

*6

*6

*6

*6

/dt

Typical Transient Thermal Characteristics

Symbol Value Unit Unit

T

= 25°C

c

V

= 0V, IS = 15A

GS

= 15A

I

S

di/dt = 100A/µs

T

= 25°C

j

- -

-

-

-

-

-

482

- 6.3 -

- 26

-

700

Symbol Value

15

60

1.5 V

-

ns

µC

- A

-

A/µs

A

A

R

th1

R

th2

R

th3

0.117

0.662

2.14

K/W Ws/K

C

th1

C

th2

C

th3

0.00318

0.0429

0.507

2012.02 - Rev.B

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Data Sheet

R6015ANX

5/13

Electrical characteri st ic curves

Fig.1 Power Dissipation Derating Curve

120

100

max. [%]

D

80

/P

D

60

40

20

Power Dissipation : P

0

0 50 100 150 200

Junction Temperature : Tj [°C]

Fig.2 Maximum Safe Operating Area

100

Operation in this
area is limited
by R

10

[A]

D

1

0.1

Drain Current : I

0.01

0.1 1 10 100 1000

DS(ON)

PW = 100us

PW = 1ms

PW = 10ms

Ta = 25ºC
Single Pulse

Drain - Source Voltage : VDS [V]

Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width

(t)

1000

Ta = 25ºC

100

Single Pulse
R
R

10

1

0.1

0.01

0.001

0.0001

0.0001 0.01 1 100

Normalized Transient T hermal Resistance : r

th(ch-a)(t)
th(ch-a)

= ｒ

(t)×Rth(ch-a)

= 70ºC/W

top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single

Pulse Width : PW [s]

2012.02 - Rev.B