ROHM R6015ANJ Technical data

C

10V Drive Nch MOSFET

R6015ANJ

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

LPTS

7.25

13.1

1.0

3.0

(1) Gate
(2) Drain
(3) Source

LPTL

(1) Gate
(2) Drain
(3) Source

(1) (2) (3)

(1) Gate
(2) Drain
(3) Source

(1) (2) (3)

(1) (2) (3)

10.1

1.24

2.54

0.78

5.08

Each lead has same dimensions

8.9

4.8

Each lead has same dimensions

∗1

∗1 Body Diode

zFeatures

1) Low on-resistance.

2) Fast switching speed.

3) Gate-source voltage (V

GSS) guaranteed to be ±30V.

4) Drive circuits can be simple.

5) Parallel use is easy.

zApplications

Switching

zPackaging specifications

LPTS
LPTL

Taping

1000

TL

TLL

Package

Type

Code

Basic ordering unit (pieces)

zAbsolute maximum ratings (Ta=25°C) zInner circuit

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body Diode)

Continuous
Pulsed
Continuous

Pulsed
Avalanche Current
Avalanche Energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, V
∗3 Limited only by maximum temperature allowed

DD

=50V, RG=25Ω, Starting, Tch=25°C

Symbol

V

DSS

VGSS

I

D

IDP

IS A

I

SP A

AS

I

AS

E

PD

Tch

Tstg °C

∗3
∗1
∗3
∗1

∗2

∗2

−55 to +150

Limits

600

±30
±15
±60

15
60

7.5

15.0
100
150

Unit

V
V
A
A

A

mJ

W

°C

zThermal resistance

Parameter

hannel to case 1.25

Symbol Limits Unit

Rth(ch-c)

°C/W

4.5

1.3

9.0

0.4

1.2

2.7

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1/5

2009.04 - Rev.A

R6015ANJ

zElectrical characteristics (Ta=25°C)

Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance

Symbol

I

V

(BR)DSS

I

V

R

| Y
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time

C

C

t
Rise time
Turn-off delay time

t
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗ Pulsed

Q

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗ Pulsed

∗

V

SD

Min.

GSS

−

600

DSS

GS(th)

DS(on)

C

oss

rss

d(on)

t

d(off)

t

Q

Q

−

2.5

∗

−

∗

fs

|

4.5

iss

−

−

−

∗

−

∗

r

−

∗

−

∗

f

−

∗

g

−

∗

gs

−

∗

gd

−

Min. Typ. Max.

−−1.5 V IS=15A, VGS=0VForward voltage

Max. Unit Conditions

Typ.

−

−

−

−

0.23

−

1700
1120

80
50
50

150

60
50

8

20

±100

−

100

4.5

0.3

−

−

−

−

− ns

− VGS=10Vns

− RL=40Ωns

− RG=10Ωns

− V

− nC

− nC

Unit

nA V

V

µA

V

Ω

S
pF
pF
pF

nC

GS

D

=1mA, VGS=0V

I

DS

V
V

DS

D

=7.5A, VGS=10V

I
I

D

=7.5A, VDS=10V

V

DS

V

GS

f=1MHz

D

=7.5A, VDD 300V

I

DD

D

=15A

I

GS

V

L

=20Ω / RG=10Ω

R

Conditions

=±30V, VDS=0V

=600V, VGS=0V
=10V, ID=1mA

=25V
=0V

300V

=10V

Data Sheet

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2/5

2009.04 - Rev.A

R6015ANJ

zElectrical characteristics curves

100

10

(A)

D

1

Oper ation in thi s
area i s li mited

0.1
by R

DRAIN CURRENT : I

Tc = 25°C
Sing le Pulse

0.01

0.1 1 10 100 1000

DR AIN-SOU RCE VOLTAGE : V

PW=100us

DS(ON)

Fi g.1 M aximum Safe Oper ating Aera

PW=1ms

PW = 10ms

DC operati on

40

30

(A)

D

20

10

DRAIN CURRENT: I

0

0 1020304050

( V )

DS

DR AIN-SOU RCE VOLTAG E: VDS (V)

Fi g.2: T ypic al output char acter isti cs(Ⅰ)

8.0V

10V

6.5V

6.0V

5.0V

Ta= 25°C
Pulsed

7.0V

VGS= 4.5V

20

Ta= 25°C
Pulsed

15

(A)

D

10

5

DRAIN CURRENT: I

0

012345

10V

8.0V

7.0V

6.5V

6.0V

DRAIN-SOURCE VOLTAGE: VDS (V)

Fi g.3: T ypic al output char acter isti cs(Ⅱ)

5.0V

VGS= 4.5V

Data Sheet

5.5V

100

VDS= 10V
Pulsed

10

(A)

Ta= 125°C

D

Ta= 75°C

Ta= 25°C

1

Ta= -25°C

0.1

DRAIN CURRENT : I

0.01
01 2345 67

GATE- SOURC E VOLTAGE : VGS (V)

Fi g.4 T ypical Tr ansfer C haracter isti cs

0.6

0.5

(Ω)

0.4

DS(on)

0.3

0.2

RESIST ANCE : R

0.1

STATI C DRAIN -SOUR CE ON- STATE

0

ID=7.5A

051015

GATE-SOURCE VOLTAGE : VGS (V)

Fi g.7 Stat ic Dr ain- Source On- State
Resis tance vs. Gate Source Voltag e

ID=15A

Ta= 25°C
Pulsed

6

VDS= 10V

(V)

I

= 1mA

D

5

GS(th)

4

3

2

1

GATE T HRESHOLD VOLTAGE: V

0

-50 0 50 100 150

CH ANNEL TEM PERATUR E: Tch (°C)

Fi g.5 Gate T hreshol d Voltag e
vs. Channel Temperat ure

0.6
VGS= 10V

Pulsed

0.5

) (Ω)

0.4

DS(on

0.3

0.2

RESIST ANCE : R

0.1

STATIC DRAIN-SOURCE ON-STATE

0

-50 0 50 100 150

Fi g.8 Stat ic Dr ain- Source On- State
Res istanc e vs. C hannel Temper ature

ID= 15A

CH ANNEL TEM PERATUR E: Tch (°C)

ID= 7. 5A

10

VGS= 10V
Pulsed

(Ω)

1

DS(on)

0.1

RESISTANCE : R

STATI C DRAIN -SOUR CE ON- STATE

0.01

0.001 0.01 0.1 1 10 100

DRAIN CURRENT : ID (A)

Fi g.6 Stat ic Dr ain- Source On- State

Resis tance vs. Drain Cur rent

100

VDS= 10V
Pulsed

10

1

|Yfs| (S)

0.1

0.01

FOR WARD TRANSF ER ADMI TTANC E :

0.001

0.001 0.01 0.1 1 10 100

DRAIN CURRENT : ID (A)

Fi g.9 F orward Tr ansfer Admittance
vs. Drain Cur rent

Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

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R6015ANJ

Data Sheet

100

VGS= 0V
Pulsed

(A)

DR

10

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= -25°C

1

0.1

REVERSE DRAIN CURRENT : I

0.01

00.511.5

SOURCE-DRAIN VOLTAGE : VSD (V)

Fi g.10 R everse D rain C urr ent vs.

Sourse-Drain Voltage

1000

(ns)

rr

100

Ta= 25°C
di / dt= 100A / µs

= 0V

V

REVERSE RECOVERY TIME: t

10

0.1 1 10 100

REVERSE DRAIN CURRENT : IDR (A)

F ig .1 3 Re ver se R ec over y T ime
vs.Reverse Drai n Cur rent

GS

Pulsed

10000

1000

100

10

CAPACITANCE : C (pF)

Ta= 25°C
f= 1MHz

= 0V

V

GS

1

0.01 0.1 1 10 100 1000

DRAIN-SOURCE VOLTAGE : VDS (V)

Fi g.11 Typic al Capaci tance vs.
Dr ain-Source Voltage

10000

1000

t

d(off)

100

10

SWIT CHING TIM E : t (ns)

1

t

r

0.01 0.1 1 10 100

DRAIN CURRENT : ID (A)

Fig.14 Switching　Char acter is tics

C

oss

C

rss

t

f

t

d(on)

C

iss

Ta= 25°C
V

= 300V

DD

= 10V

V

GS

R

= 10Ω

G

Pulsed

15

Ta= 25°C
V

= 300V

DD

(V)

= 15A

I

D

GS

R

= 10Ω

G

Pulsed

10

5

GATE- SOURC E VOLTAGE : V

0

0 10203040506070

TOTAL GATE CHARGE : Q

Fig .12 Dynamic Input Characteri stics

(nC)

g

10

Ta = 25°C
Sing le Pul se : 1Unit

Rth（ch-a）（t） = ｒ（t）×Rth（ch-a

1

Rth（ch-a） = 49.7 °C/W

0.1

0.01

RESISTAN CE : r ( t)

0.001

NOR MARIZED TRANSIEN T THER MAL

0.0001

0.0001 0. 001 0.01 0.1 1 10 100 1000

Fi g.15 Nor malized T ransi ent Thermal R esistanc e vs. Pul se Width

）

PULSE WIDT H : Pw(s)

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R6015ANJ

zMeasurement circuits

Fig.1 Switching time measurement circuit Fig.2 Switching waveforms

IG(Const.)

Fig.3 Gate charge measurement circuit Fig.4 Gate charge waveform

Fig.5 Avalanche measurement circuit Fig.6 Avalanche waveform

Data Sheet

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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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information, ROHM shall bear no responsibility for such damage.

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