ROHM R6015ANJ Technical data
C
10V Drive Nch MOSFET
R6015ANJ
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET
LPTS
7.25
13.1
1.0
3.0
(1) Gate
(2) Drain
(3) Source
LPTL
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
(1) (2) (3)
10.1
1.24
2.54
0.78
5.08
Each lead has same dimensions
8.9
4.8
Each lead has same dimensions
∗1
∗1 Body Diode
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (V
GSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
zApplications
Switching
zPackaging specifications
LPTS
LPTL
Taping
1000
TL
TLL
Package
Type
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C) zInner circuit
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Avalanche Current
Avalanche Energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, V
∗3 Limited only by maximum temperature allowed
DD
=50V, RG=25Ω, Starting, Tch=25°C
Symbol
V
DSS
VGSS
I
D
IDP
IS A
I
SP A
AS
I
AS
E
PD
Tch
Tstg °C
∗3
∗1
∗3
∗1
∗2
∗2
−55 to +150
Limits
600
±30
±15
±60
15
60
7.5
15.0
100
150
Unit
V
V
A
A
A
mJ
W
°C
zThermal resistance
Parameter
hannel to case 1.25
Symbol Limits Unit
Rth(ch-c)
°C/W
4.5
1.3
9.0
0.4
1.2
2.7
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c
○
2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.04 - Rev.A
R6015ANJ
zElectrical characteristics (Ta=25°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Symbol
I
V
(BR)DSS
I
V
R
| Y
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
C
C
t
Rise time
Turn-off delay time
t
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗ Pulsed
Q
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗ Pulsed
∗
V
SD
Min.
GSS
−
600
DSS
GS(th)
DS(on)
C
oss
rss
d(on)
t
d(off)
t
Q
Q
−
2.5
∗
−
∗
fs
|
4.5
iss
−
−
−
∗
−
∗
r
−
∗
−
∗
f
−
∗
g
−
∗
gs
−
∗
gd
−
Min. Typ. Max.
−−1.5 V IS=15A, VGS=0VForward voltage
Max. Unit Conditions
Typ.
−
−
−
−
0.23
−
1700
1120
80
50
50
150
60
50
8
20
±100
−
100
4.5
0.3
−
−
−
−
− ns
− VGS=10Vns
− RL=40Ωns
− RG=10Ωns
− V
− nC
− nC
Unit
nA V
V
µA
V
Ω
S
pF
pF
pF
nC
GS
D
=1mA, VGS=0V
I
DS
V
V
DS
D
=7.5A, VGS=10V
I
I
D
=7.5A, VDS=10V
V
DS
V
GS
f=1MHz
D
=7.5A, VDD 300V
I
DD
D
=15A
I
GS
V
L
=20Ω / RG=10Ω
R
Conditions
=±30V, VDS=0V
=600V, VGS=0V
=10V, ID=1mA
=25V
=0V
300V
=10V
Data Sheet
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c
○
2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.04 - Rev.A
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