Datasheet R6012FNX Datasheet (ROHM)

Data Sheet

10V Drive Nch MOSFET

R6012FNX

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

TO -220F M

10.0

φ

3.2

4.5

2.8

Features

1) Fast reverse recovery time (t

2) Low on-resistance.

)

rr

15.0

14.0

3) Fast switching speed.

4) Gate-source voltage 　 V

garanteed to be ±30V .

GSS

5) Drive circuits can be simple.

6) Parallel use is easy.

Application

Switching  Inner circuit

Packaging specifications

Package Bulk

Type

Code Basic ordering unit (pieces) 500

R6012FNX 

(1) Gate (2) Drain (3) Source

Absolute maximum ratings (Ta  25°C)

Parameter Drain-source voltage V Gate-source voltage V

Drain current Source current

(Body Diode)

Continuous I Pulsed I Continuous I

Pulsed I Avalanche Current I Avalanche Energy E Power dissipation (Tc=25C) P

Symbol Limits Unit

DSS GSS

D

DP

S SP AS

AS

D

*3 *1 *3

*1 *2 *2

600 V

30 V 12 A 48 A

12 A 48 A

6A

9.6 mJ 50 W

Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1% *2 L≒500H, V *3 Limited only by maximum temperature allowed.

=50V, Rg=25,starting Tch=25°C

DD

12.0

8.02.5

1.3

(1) (3)(2)

1 BODY DIODE

1.2

0.8

2.54 2.62.54

(2)(3)(1)

0.75

∗1

 Thermal resistance

Parameter

Channel to Case Rth (ch-c) 2.5 C / W

Symbol Limits Unit

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2011.08 - Rev.A

Data Sheet

R6012FNX

 Electrical characteristics (Ta = 25C)

Parameter Gate-source leakage I Drain-source breakdown voltage V Zero gate voltage drain current I Gate threshold voltage V

Static drain-source on-state resistance

Forward transfer admittance l Y Input capacitance C Output capacitance C Reverse transfer capacitance C Turn-on delay time t Rise time t Turn-off delay time t Fall time t Total gate charge Q Gate-source charge Q Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss oss rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=±30V, VDS=0V

600 - - V ID=1mA, VGS=0V

- - 100 AVDS=600V, VGS=0V

3-5VV

- 0.39 0.51

*

l 3.5 - - S ID=6A, VDS=10V



=10V, ID=1mA

DS

ID=6A, VGS=10V

- 1300 - pF VDS=25V

- 890 - pF VGS=0V

- 45 - pF f=1MHz

- 30 - ns ID=6A, VDD 300V

*

- 37 - ns VGS=10V

*

- 77 - ns RL=50

*

- 20 - ns RG=10

*

- 35 - nC ID=12A,

*

- 10 - nC VDD 300V

*

- 15 - nC VGS=10V

*

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V Reverse Recovery Time t

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD rr

- - 1.5 V Is=12A, VGS=0V

45 75 105 ns

*

Conditions

=12A, di/dt=100A/s

I

s

2/6

2011.08 - Rev.A

Data Sheet

R6012FNX

Electrical characteristic curves (Ta=25C)

0

1

2

3

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=10.0V

VGS=6.0V

VGS=7.0V

VGS=5.0V

VGS=5.5V

VGS=8.0V

VGS=6.5V

Ta=25°C Pulsed

0

5

10

15

20

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=10.0V

VGS=6.0V

VGS=6.5V

VGS=5.0V

VGS=5.5V

VGS=7.0V

VGS=8.0V

Ta=25°C Pulsed

0.001

0.01

0.1

1

10

100

0.0 2.0 4.0 6.0 8.0 10.0

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.3 Typical Transfer Characteristics

VDS=10V pulsed

Ta=125°C

Ta=75°C Ta=25°C

Ta=-25°C

2

3

4

5

-50 0 50 100 150

Gate Threshold Voltage : V

GS(th)

[V]

Channel Temperature : Tch [℃]

Fig.4 Gate Threshold Voltage vs. Channel Temperature

VDS=10V I

D

=1mA

pulsed

0.1

1

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[Ω]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

0

0.2

0.4

0.6

0.8

1

-50 0 50 100 150

Static Drain-Source On-State Resistance : R

DS(on)

[Ω]

Channel Temperature : Tch [℃]

Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature

VGS=10V pulsed

ID=6A

ID=12A

3/6

2011.08 - Rev.A

Data Sheet

R6012FNX

0.001

0.01

0.1

1

10

100

0.001 0.01 0.1 1 10 100

Forward Transfer Admittance

Y

fs

[S]

Drain Current : ID [A]

Fig.7 Forward Transfer Admittance vs. Drain Current

VDS=10V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5

Source Current : Is [A]

Source-Drain Voltage : VSD [V]

Fig.8 Source Current vs. Source-Drain Voltage

VGS=0V pulsed

Ta=125°C

Ta=75°C Ta=25°C

Ta=-25°C

1

10

100

1000

10000

0.01 0.1 1 10 100

Switching Time : t [ns]

Drain Current : ID [A]

Fig.10 Switching Characteristics

t

d(on)

t

r

t

d(off) tf

VDD≒300V V

GS

=10V

R

G

=10Ω

T

a

=25°C

Pulsed

0

2

4

6

8

10

12

0 5 10 15 20 25 30 35 40 45 50

Gate-Source Voltage : V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.11 Dynamic Input Characteristics

Ta=25°C VDD=300V I

D

=12A

Pulsed

1

10

100

1000

10000

100000

0.01 0.1 1 10 100 1000

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.12 Typical Capacitance vs. Drain-Source Voltage

T

a

=25

°C

f=1MHz VGS=0V

C

iss

C

oss

C

rss

0

0.2

0.4

0.6

0.8

1

0 2 4 6 8 10 12 14 16 18 20

Static Drain-Source On-State Resistance

R

DS(on)

[Ω]

Gate-Source Voltage : VGS [V]

Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

ID=12A

ID=6A

Ta=25°C Pulsed

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2011.08 - Rev.A

Data Sheet

R6012FNX

10

100

1000

0 1 10 100

Reverse Recovery Time : t

rr

[ns]

Source Current : IS [A]

Fig.13 Reverse Recovery Time vs. Source Current

Ta=25°C Vgs=0V di/dt=100A/us Pulsed

0.01

0.1

1

10

100

0.1 1 10 100 1000

Drain Current : I

D

[ A ]

Drain-Source Voltage : VDS [ V ]

Fig.14 Maximum Safe Operating Area

T

a

=25°C

Single Pulse

Operation in this area is limited by R

DS(on)

(VGS = 10V)

PW = 100μs

PW = 1ms

PW = 10ms

0.0001

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r（t）

Pulse width : Pw (s)

Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width

T

a

=25°C

Single Pulse

Rth

(ch-a)

=53.0°C/W

Rth

(ch-a)

(t)=r(t)×Rth

(ch-a)

5/6

2011.08 - Rev.A

Data Sheet

R6012FNX

F

it

%

V V

F

S

Fig.2-2 Gate Charge Waveform

V

 Measurement circuits

V

GS

R

G

ig.1-1 Switching Time Measurement Circu

V

GS

I

G(Const.)

ig.2-1 Gate Charge Measurement Circuit

I

D.U.T.

I

D.U.T.

Pulse width

D

V

DS

R

L

V

DD

50%

10%

GS DS

10% 10%

t

d(on)

t

on

Fig.1-2 Switching Waveforms

V

G

D

V

D

R

L

GS

QgsQ

V

DD

90%

50%

90% 90

t

d(off)

t

r

t

off

Q

g

gd

Charge

t

f

V

GS

R

G

D.U.T.

I

AS

L

DD

V

Fig.3-1 Avalanche Measurement Circuit

V

DS

V(BR)DSS

IAS

VDD

EAS =

1

L

2

V(BR)DSS

2

I

AS

V

(BR)DSS

-

VDD

Fig.3-2 Avalanche Waveform

6/6

2011.08 - Rev.A

Notes

Notice

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Datasheet R6012FNX Datasheet (ROHM)

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