ROHM R6012FNX Technical data
Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
10V Drive Nch MOSFET
R6012FNX
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
TO -220F M
10.0
φ
3.2
4.5
2.8
Features
1) Fast reverse recovery time (t
2) Low on-resistance.
)
rr
15.0
14.0
3) Fast switching speed.
4) Gate-source voltage
V
garanteed to be ±30V .
GSS
5) Drive circuits can be simple.
6) Parallel use is easy.
Application
Switching Inner circuit
Packaging specifications
Package Bulk
Type
Code Basic ordering unit (pieces) 500
R6012FNX
(1) Gate
(2) Drain
(3) Source
Absolute maximum ratings (Ta 25°C)
Parameter
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Avalanche Current I
Avalanche Energy E
Power dissipation (Tc=25C) P
Symbol Limits Unit
DSS
GSS
D
DP
S
SP
AS
AS
D
*3
*1
*3
*1
*2
*2
600 V
30 V
12 A
48 A
12 A
48 A
6A
9.6 mJ
50 W
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 L≒500H, V
*3 Limited only by maximum temperature allowed.
=50V, Rg=25,starting Tch=25°C
DD
12.0
8.02.5
1.3
(1) (3)(2)
1 BODY DIODE
1.2
0.8
2.54 2.62.54
(2)(3)(1)
0.75
∗1
Thermal resistance
Parameter
Channel to Case Rth (ch-c) 2.5 C / W
Symbol Limits Unit
1/6
2011.08 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6012FNX
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state
resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
R
DS (on)
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
Conditions
--100 nA VGS=±30V, VDS=0V
600 - - V ID=1mA, VGS=0V
- - 100 AVDS=600V, VGS=0V
3-5VV
- 0.39 0.51
*
*
l 3.5 - - S ID=6A, VDS=10V
=10V, ID=1mA
DS
ID=6A, VGS=10V
- 1300 - pF VDS=25V
- 890 - pF VGS=0V
- 45 - pF f=1MHz
- 30 - ns ID=6A, VDD 300V
*
- 37 - ns VGS=10V
*
- 77 - ns RL=50
*
- 20 - ns RG=10
*
- 35 - nC ID=12A,
*
- 10 - nC VDD 300V
*
- 15 - nC VGS=10V
*
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage V
Reverse Recovery Time t
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
rr
- - 1.5 V Is=12A, VGS=0V
45 75 105 ns
*
Conditions
=12A, di/dt=100A/s
I
s
2/6
2011.08 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
R6012FNX
Electrical characteristic curves (Ta=25C)
0
1
2
3
0 0.2 0.4 0.6 0.8 1
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.1 Typical Output Characteristics (Ⅰ)
VGS=10.0V
VGS=6.0V
VGS=7.0V
VGS=5.0V
VGS=5.5V
VGS=8.0V
VGS=6.5V
Ta=25°C
Pulsed
0
5
10
15
20
0 2 4 6 8 10
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=10.0V
VGS=6.0V
VGS=6.5V
VGS=5.0V
VGS=5.5V
VGS=7.0V
VGS=8.0V
Ta=25°C
Pulsed
0.001
0.01
0.1
1
10
100
0.0 2.0 4.0 6.0 8.0 10.0
Drain Currnt : I
D
[A]
Gate-Source Voltage : VGS [V]
Fig.3 Typical Transfer Characteristics
VDS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
2
3
4
5
-50 0 50 100 150
Gate Threshold Voltage : V
GS(th)
[V]
Channel Temperature : Tch [℃]
Fig.4 Gate Threshold Voltage vs. Channel Temperature
VDS=10V
I
D
=1mA
pulsed
0.1
1
0.01 0.1 1 10 100
Static Drain-Source On-State Resistance
R
DS(on)
[Ω]
Drain Current : ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
VGS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0
0.2
0.4
0.6
0.8
1
-50 0 50 100 150
Static Drain-Source On-State Resistance : R
DS(on)
[Ω]
Channel Temperature : Tch [℃]
Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
VGS=10V
pulsed
ID=6A
ID=12A
3/6
2011.08 - Rev.A
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