ROHM R6012ANJ Technical data

C

10V Drive Nch MOSFET

R6012ANJ

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Low on-resistance.

2) Fast switching speed.

3) Gate-source voltage (V

GSS) guaranteed to be ±30V.

4) Drive circuits can be simple.

5) Parallel use is easy.

zApplications

Switching

zPackaging specifications

LPTS
LPTL

Taping

1000

TL

TLL

Package

Type

Code

Basic ordering unit (pieces)

zAbsolute maximum ratings (Ta=25°C) zInner circuit

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body Diode)

Continuous
Pulsed
Continuous

Pulsed
Avalanche Current
Avalanche Energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, V
∗3 Limited only by maximum temperature allowed

DD

=50V, RG=25Ω, Starting, Tch=25°C

Symbol

V

DSS

V

GSS

I

D

I

DP

I

S

I

SP

AS

I

AS

E

P

D

Tch

Tstg °C

∗3
∗1
∗3
∗1

∗2

∗2

−55 to +150

Limits

600

±30
±12
±48

12
48

6

9.6
100
150

Unit

V
V
A
A
A
A
A

mJ

W

°C

zThermal resistance

Parameter

hannel to case 1.25

Symbol Limits Unit

Rth(ch-c)

°C/W

LPTS

7.25

13.1

1.0

3.0

(1) Gate
(2) Drain
(3) Source

LPTL

(1) Gate
(2) Drain
(3) Source

(1) (2) (3)

(1) Gate
(2) Drain
(3) Source

10.1

1.24

2.54

5.08

(1) (2) (3)

8.9

4.8

(1) (2) (3)

0.78

Each lead has same dimensions

Each lead has same dimensions

∗1

∗1 Body Diode

4.5

1.3

9.0

0.4

1.2

2.7

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c

○

2009 ROHM Co., Ltd. All rights reserved.

1/5

2009.04 - Rev.A

R6012ANJ

zElectrical characteristics (Ta=25°C)

Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance

Symbol

I

V

(BR)DSS

I

V

R

| Y
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time

C

C

t
Rise time
Turn-off delay time

t
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗ Pulsed

Q

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗ Pulsed

∗

V

SD

Min.

GSS

−

600

DSS

GS(th)

DS(on)

C

oss

rss

d(on)

t

d(off)

t

Q

Q

−

2.5

∗

−

∗

fs

|

3.5

−

iss

−

−

∗

−

∗

r

−

∗

−

∗

f

−

∗

g

−

∗

gs

−

∗

gd

−

Min. Typ. Max.

−−1.5 V IS=12A, VGS=0VForward voltage

Max. Unit Conditions

Typ.

GS

−

−

−

−

0.32

−

1300

890

45
30
30
90
35
35

7

15

±100

100

0.42

4.5

nA V

V

−

µA

V

Ω

S

−

pF

−

pF

−

pF

−

− ns

− VGS=10Vns

− RL=50Ωns

− RG=10Ωns

nC

− V

− nC

− nC

Unit

=±30V, VDS=0V

D

=1mA, VGS=0V

I

DS

=600V, VGS=0V

V
V

DS

=10V, ID=1mA

I

D

=6A, VGS=10V

D

=6A, VDS=10V

I
V

DS

=25V

GS

=0V

V
f=1MHz

D

=6A, VDD 300V

I

DD

D

=12A

I

GS

=10V

V

L

=25Ω / RG=10Ω

R

Conditions

300V

Data Sheet

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c

○

2009 ROHM Co., Ltd. All rights reserved.

2/5

2009.04 - Rev.A