Datasheet R6012ANJ Datasheet (ROHM)

C

10V Drive Nch MOSFET

R6012ANJ

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Low on-resistance.

2) Fast switching speed.

3) Gate-source voltage (V

GSS) guaranteed to be ±30V.

4) Drive circuits can be simple.

5) Parallel use is easy.

zApplications

Switching

zPackaging specifications

LPTS
LPTL

Taping

1000

TL

TLL

Package

Type

Code

Basic ordering unit (pieces)

zAbsolute maximum ratings (Ta=25°C) zInner circuit

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body Diode)

Continuous
Pulsed
Continuous

Pulsed
Avalanche Current
Avalanche Energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, V
∗3 Limited only by maximum temperature allowed

DD

=50V, RG=25Ω, Starting, Tch=25°C

Symbol

V

DSS

V

GSS

I

D

I

DP

I

S

I

SP

AS

I

AS

E

P

D

Tch

Tstg °C

∗3
∗1
∗3
∗1

∗2

∗2

−55 to +150

Limits

600

±30
±12
±48

12
48

6

9.6
100
150

Unit

V
V
A
A
A
A
A

mJ

W

°C

zThermal resistance

Parameter

hannel to case 1.25

Symbol Limits Unit

Rth(ch-c)

°C/W

LPTS

7.25

13.1

1.0

3.0

(1) Gate
(2) Drain
(3) Source

LPTL

(1) Gate
(2) Drain
(3) Source

(1) (2) (3)

(1) Gate
(2) Drain
(3) Source

10.1

1.24

2.54

5.08

(1) (2) (3)

8.9

4.8

(1) (2) (3)

0.78

Each lead has same dimensions

Each lead has same dimensions

∗1

∗1 Body Diode

4.5

1.3

9.0

0.4

1.2

2.7

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2009.04 - Rev.A

R6012ANJ

zElectrical characteristics (Ta=25°C)

Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance

Symbol

I

V

(BR)DSS

I

V

R

| Y
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time

C

C

t
Rise time
Turn-off delay time

t
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗ Pulsed

Q

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗ Pulsed

∗

V

SD

Min.

GSS

−

600

DSS

GS(th)

DS(on)

C

oss

rss

d(on)

t

d(off)

t

Q

Q

−

2.5

∗

−

∗

fs

|

3.5

−

iss

−

−

∗

−

∗

r

−

∗

−

∗

f

−

∗

g

−

∗

gs

−

∗

gd

−

Min. Typ. Max.

−−1.5 V IS=12A, VGS=0VForward voltage

Max. Unit Conditions

Typ.

GS

−

−

−

−

0.32

−

1300

890

45
30
30
90
35
35

7

15

±100

100

0.42

4.5

nA V

V

−

µA

V

Ω

S

−

pF

−

pF

−

pF

−

− ns

− VGS=10Vns

− RL=50Ωns

− RG=10Ωns

nC

− V

− nC

− nC

Unit

=±30V, VDS=0V

D

=1mA, VGS=0V

I

DS

=600V, VGS=0V

V
V

DS

=10V, ID=1mA

I

D

=6A, VGS=10V

D

=6A, VDS=10V

I
V

DS

=25V

GS

=0V

V
f=1MHz

D

=6A, VDD 300V

I

DD

D

=12A

I

GS

=10V

V

L

=25Ω / RG=10Ω

R

Conditions

300V

Data Sheet

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2/5

2009.04 - Rev.A

R6012ANJ

zElectrical characteristics curves

Data Sheet

100

10

(A)

D

1

Operati on in this
area i s l imited

0.1

by R

DRAIN CURRENT : I

0.01

100

10

(A)

D

0.1

DRAIN CURRENT : I

0.01

DS(ON)

Tc = 25°C
Sing le Puls e

0.1 1 10 100 1000

DR AIN-SOUR CE VOLTAGE : V

Fi g.1 M aximum Saf e Oper ating Aera

VDS= 10V
Pulsed

Ta= 125°C

Ta= 75°C

Ta= 25°C

1

Ta= -25°C

01 2345 67

GATE-SOURCE VOLTAGE : VGS (V)

Fi g.4 T ypi cal Tr ansfer Char acter isti cs

PW=100us

PW=1ms

DC operati on

DS

( V )

40

10V

9.0V

30

(A)

D

20

10

DRAIN CURRENT: I

0

0 1020304050

DRAIN-SOURCE VOLTAGE: VDS (V)

Fi g.2: T ypical Output Char acteri stics (Ⅰ)

6

VDS= 10V
I

= 1mA

D

(V)

5

GS(th)

4

3

2

1

GATE TH RESHOLD VOLTAGE: V

0

-50 0 50 100 150

CHANNEL TEMPERATURE: Tch (°C)

Fig.5 Gate Threshold Voltage
vs. Channel Temperatur e

6.5V

7.0V

5.0V

8.0V

VGS= 4. 5V6.0V

Ta= 25°C
Pulsed

20

Ta= 25°C
Pulsed

15

(A)

D

10

DRAIN CURRENT: I

10

(Ω)

DS(on)

0.1

RESISTANCE : R

STATIC DR AIN-SOURCE ON- STATE

0.01

7.0V

6.5V

6.0V

5

0

012 345

DRAIN-SOURCE VOLTAGE: VDS (V)

Fi g.3: Typical Output C haracter ist ics (Ⅱ)

VGS= 10V
Pulsed

1

0.001 0.01 0. 1 1 10 100

DRAIN CURRENT : ID (A)

Fi g.6 St ati c D rain- Sourc e On-State
Resi stance vs. Dr ain C urr ent

8.0V

10V

5.0V

VGS= 4.5V

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

5.5V

0.8
Ta= 25°C

Pulsed

0.6

(Ω)

DS(on)

0.4

0.2

RESISTANCE : R

STATIC DR AIN-SOURCE ON- STATE

0

0 5 10 15

GATE- SOURCE VOLT AGE : VGS (V)

Fi g.7 Sta ti c D rain- Sourc e On-State
Resi stance vs. Gate Source Voltage

ID=6A

ID=12A

0.8
VGS= 10V

Puls ed

0.6

) (Ω)

DS(on

0.4

0.2

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

0

-50 0 50 100 150

Fi g.8 Stati c Dr ain-Sour ce On-Stat e
Resi stance vs. Channel Temperature

ID= 12A

ID= 6A

CHANNEL TEMPERATURE: Tch (°C)

100

VDS= 10V
Puls ed

10

1

|Yfs| (S)

0.1

0.01

FOR WARD TRAN SFER ADMIT TANC E :

0.001

0.001 0.01 0.1 1 10 100

DRAIN CURRENT : ID (A)

Fi g.9 For ward T ransfer Admitt ance
vs. Drai n Cur rent

Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C

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R6012ANJ

100

VGS= 0V
Pulsed

(A)

DR

10

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= -25°C

1

0.1

REVERSE DRAIN CURRENT : I

0.01

00.511.5

SOUR CE-D RAIN VOLT AGE : VSD (V)

Fi g.10 Revers e Drai n Curr ent vs.

Sourse-Drain Voltage

10000

1000

100

10

CAPACITANCE : C (pF)

Ta= 25°C
f= 1MH z
V

= 0V

GS

1

0.1 1 10 100 1000

DRAIN-SOURCE VOLTAGE : VDS (V)

Fi g.11 Typic al Capaci tance vs.

Drain- Source Voltage

C

oss

C

rss

(V)

GS

C

iss

GATE- SOURC E VOLTAGE : V

Data Sheet

15

Ta= 25°C
V

= 300V

DD

I

= 12A

D

R

= 10Ω

G

Pulsed

10

5

0

0 1020304050

TOTAL GATE CHARGE : Q

Fi g.12 Dynamic Input Character isti cs

(nC)

g

1000

(ns)

rr

100

Ta= 25°C
di / dt= 100A / µs
V

= 0V

REVERSE RECOVERY TIME: t

10

0.1 1 10 100

REVERSE DRAIN CURRENT : IDR (A)

Fi g.13 R everse R ecovery Time

vs.Reverse Drai n Curr ent

10

Ta = 25°C
Sing le Pulse : 1Unit

Rth（ch-a）（t） = ｒ（t）×Rth（ch-a

1

Rth（ch-a） = 53.0 °C/W

0.1

0.01

RESIST ANCE : r (t)

0.001

NOR MARIZ ED TR ANSIENT T HERM AL

0.0001

0.0001 0.001 0.01 0.1 1 10 100 1000

Fi g.15 N ormali zed Tr ansient Thermal Resi stance vs. Pulse Wi dth

GS

Pulsed

）

PULSE WID TH : Pw(s )

10000

1000

t

d( off)

100

10

SWITC HING TIME : t ( ns)

1

0.01 0.1 1 10 100

Fig.14 Switching　Char acter is tics

t

f

t

t

r

DRAIN CURRENT : ID (A)

d(on)

Ta= 25°C
V

= 300V

DD

= 10V

V

GS

R

= 10Ω

G

Pulsed

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R6012ANJ

zMeasurement circuits

Fig.1 Switching time measurement circuit Fig.2 Switching waveforms

IG(Const.)

Fig.3 Gate charge measurement circuit Fig.4 Gate charge waveform

Fig.5 Avalanche measurement circuit Fig.6 Avalanche waveform

Data Sheet

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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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