Datasheet R6010ANX Datasheet (ROHM)

Data Sheet

10V Drive Nch MOSFET

R6010ANX

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

TO -220F M

10.0

φ3.2

4.5

2.8

Features

15.0

1) Low on-resistance.

2) Fast switching speed.

3) Gate-source voltage (V

GSS

4) Drive circuits can be simple.

5) Parallel use is easy.

) guaranteed to be ±30V.

(1) Gate (2) Drain (3) Source

14.0

 Application

Switching

 Packaging specifications  Inner circuit

Package Bulk

Type

Code Basic ordering unit (pieces) 500

R6010ANX 

(1) Gate (2) Drain

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current (Body Diode)

Continuous I Pulsed

Avalanche current

Avalanche energy

Power dissipation P

E

I

DSS

GSS

D

DP

S

SP

AS

D

600 V

30 V

*3

*1

*3

*1

*2

*4

10 A

40

A

10 A

40

A

5A

6.5 mJ

50 W

(3) Source

Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 L 500H, V

*3 Limited only by maximum temperature allowed.

=25C

*4 T

C

=50V, RG=25, Starting, Tch=25C

DD

12.0

8.02.5

1.3

1.2

0.8

2.54 2.62.54

(2)(3)(1)

(1) (3)(2)

1 BODY DIODE

0.75

∗1

 Thermal resistance

Parameter

Symbol Limits Unit

Channel to Case Rth (ch-c) 2.5 C / W

1/6

2011.10 - Rev.A

Data Sheet

R6010ANX

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V Static drain-source on-state resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=30V, VDS=0V

600 - - V ID=1mA, VGS=0V

- - 100 AVDS=600V, VGS=0V

2.5 - 4.5 V VDS=10V, ID=1mA

*

-

*

l 3.0 - - S ID=5A, VDS=10V

0.43 0.56

- 1050 - pF VDS=25V

- 720 - pF VGS=0V

- 35 - pF f=1MHz

- 25 - ns VDD 300V, ID=5A

*

- 30 - ns VGS=10V

*

- 70 - ns RL=60

*

- 30 - ns RG=10

*

- 25 - nC VDD 300V, ID=10A

*

-5-nCV

*

-12-nC

*

ID=5A, VGS=10V



=10V

GS

Body diode characteristics (Source-Drain)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.5 V Is=10A, VGS=0V

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2011.10 - Rev.A

Data Sheet

R6010ANX

Electrical characteristic curves (Ta=25C)

0

1

2

3

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=10.0V

VGS=6.0V

VGS=7.0V

VGS=4.0V

VGS=5.0V

Ta=25°C Pulsed

0

2

4

6

8

10

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=10.0V

VGS=6.0V

VGS=5.0V

VGS=4.0V

VGS=7.0V

Ta=25°C Pulsed

0.001

0.01

0.1

1

10

100

0 1 2 3 4 5 6 7 8 9 10

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.3 Typical Transfer Characteristics

VDS=10V pulsed

Ta=125°C

Ta=75°C Ta=25°C

Ta=-25°C

0

1

2

3

4

5

-50 -25 0 25 50 75 100 125 150

Gate Threshold Voltage : V

GS

(th) [V]

Channel Temperature : Tch [℃]

Fig.4 Gate Threshold Voltage vs. Channel Temperature

VDS=10V I

D

=1mA

pulsed

0.01

0.1

1

10

0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS

(on) [W]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V pulsed

Ta=125°C

Ta=75°C Ta=25°C

Ta=-25°C

0

0.2

0.4

0.6

0.8

1

1.2

-50 -25 0 25 50 75 100 125 150

Static Drain-Source On-State Resistance

R

DS

(on) [W]

Channel Temperature : Tch [℃]

Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature

VGS=10V pulsed

ID=5A

ID=10A

3/6

2011.10 - Rev.A

Data Sheet

R6010ANX

0.1

1

10

100

0.01 0.1 1 10 100

Forward Transfer Admittance

Y

fs

[S]

Drain Current : ID [A]

Fig.7 Forward Transfer Admittance vs. Drain Current

VDS=10V pulsed

Ta=125°C

Ta=75°C Ta=25°C

Ta=-25°C

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5

Source Current : Is [A]

Source-Drain Voltage : VSD [V]

Fig.8 Source Current vs. Source-Drain Voltage

VGS=0V pulsed

Ta=125°C

Ta=75°C Ta=25°C

Ta=-25°C

0.0

0.2

0.4

0.6

0.8

1.0

0 2 4 6 8 10 12 14 16 18 20

Static Drain-Source On-State Resistance

R

DS(on)

[W]

Gate-Source Voltage : VGS [V]

Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

ID=5A

ID=10A

Ta=25°C Pulsed

1

10

100

1000

10000

0.01 0.1 1 10 100

Switching Time : t [ns]

Drain Current : ID [A]

Fig.10 Switching Characteristics

t

d(on)

t

r

t

d(off) tf

VDD≒300V V

GS

=10V

R

G

=10Ω

T

a

=25°C

Pulsed

0

2

4

6

8

10

0 5 10 15 20 25

Gate-Source Voltage : V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.11 Dynamic Input Characteristics

Ta=25°C V

DD

=300V

I

D

=10A

Pulsed

1

10

100

1000

10000

100000

0.01 0.1 1 10 100 1000 10000

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.12 Typical Capacitance vs. Drain-Source Voltage

T

a

=25°C

f=1MHz VGS=0V

C

iss

C

oss

C

rss

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2011.10 - Rev.A

Data Sheet

R6010ANX

10

100

1000

0 1 10 100

Reverse Recovery Time : trr [ns]

Source Current : IS [A]

Fig.13 Reverse Recovery Time vs. Source Current

T

a

=25°C

V

gs

=0V

di/dt=100A/us Pulsed

0.01

0.1

1

10

100

0.1 1 10 100 1000

Drain Current : I

D

[ A ]

Drain-Source Voltage : VDS [ V ]

Fig.14 Maximum Safe Operating Area

T

a

=25°C

Single Pulse

Operation in this area

is limited by R

DS(on)

(VGS = 10V)

PW = 100μs

PW = 1ms

PW = 10ms

0.0001

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r（t）

Pulse width : Pw (s)

Ta=25°C Single Pulse

Rth

(ch-a)

=52.3°C/W

Rth

(ch-a)

(t)=r(t)×Rth(ch-a)

Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width

5/6

2011.10 - Rev.A

Data Sheet

R6010ANX

F

it

%

V V

Fig.2-2 Gate Charge Waveform

V

F

S

 Measurement circuits

V

GS

R

G

ig.1-1 Switching Time Measurement Circu

V

GS

I

G(Const.)

R

G

ig.2-1 Gate Charge Measurement Circuit

D.U.T.

D

I

R

L

V

DD

D

I

R

L

V

DD

Pulse width

V

DS

50%

10%

GS DS

10% 10%

90%

50%

90% 90

t

d(on)

t

on

t

d(off)

t

r

t

f

t

off

Fig.1-2 Switching Waveforms

V

G

V

D

GS

QgsQ

Q

g

gd

Charge

V

GS

R

G

D.U.T.

I

AS

L

DD

V

Fig.3-1 Avalanche Measurement Circuit

V

DS

V(BR)DSS

IAS

VDD

EAS =

1

L

2

V(BR)DSS

2

I

AS

V

(BR)DSS

-

VDD

Fig.3-2 Avalanche Waveform

6/6

2011.10 - Rev.A

Notes

Notice

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Datasheet R6010ANX Datasheet (ROHM)

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