ROHM R6010ANX Technical data
Data Sheet
10V Drive Nch MOSFET
R6010ANX
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
TO -220F M
10.0
φ3.2
4.5
2.8
Features
15.0
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (V
GSS
4) Drive circuits can be simple.
5) Parallel use is easy.
) guaranteed to be ±30V.
(1) Gate
(2) Drain
(3) Source
14.0
Application
Switching
Packaging specifications Inner circuit
Package Bulk
Type
Code Basic ordering unit (pieces) 500
R6010ANX
(1) Gate
(2) Drain
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits Unit
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed
Continuous I
Pulsed
Avalanche current
Avalanche energy
Power dissipation P
E
I
I
I
DSS
GSS
D
DP
S
SP
AS
AS
D
600 V
30 V
*3
*1
*3
*1
*2
*2
*4
10 A
40
A
10 A
40
A
5A
6.5 mJ
50 W
(3) Source
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 L 500H, V
*3 Limited only by maximum temperature allowed.
=25C
*4 T
C
=50V, RG=25, Starting, Tch=25C
DD
12.0
8.02.5
1.3
1.2
0.8
2.54 2.62.54
(2)(3)(1)
(1) (3)(2)
1 BODY DIODE
0.75
∗1
Thermal resistance
Parameter
Symbol Limits Unit
Channel to Case Rth (ch-c) 2.5 C / W
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1/6
2011.10 - Rev.A
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Data Sheet
R6010ANX
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state
resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
R
DS (on)
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
Conditions
--100 nA VGS=30V, VDS=0V
600 - - V ID=1mA, VGS=0V
- - 100 AVDS=600V, VGS=0V
2.5 - 4.5 V VDS=10V, ID=1mA
*
-
*
l 3.0 - - S ID=5A, VDS=10V
0.43 0.56
- 1050 - pF VDS=25V
- 720 - pF VGS=0V
- 35 - pF f=1MHz
- 25 - ns VDD 300V, ID=5A
*
- 30 - ns VGS=10V
*
- 70 - ns RL=60
*
- 30 - ns RG=10
*
- 25 - nC VDD 300V, ID=10A
*
-5-nCV
*
-12-nC
*
ID=5A, VGS=10V
=10V
GS
Body diode characteristics (Source-Drain)
Parameter Conditions
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.5 V Is=10A, VGS=0V
2/6
2011.10 - Rev.A
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Data Sheet
R6010ANX
Electrical characteristic curves (Ta=25C)
0
1
2
3
0 0.2 0.4 0.6 0.8 1
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.1 Typical Output Characteristics (Ⅰ)
VGS=10.0V
VGS=6.0V
VGS=7.0V
VGS=4.0V
VGS=5.0V
Ta=25°C
Pulsed
0
2
4
6
8
10
0 2 4 6 8 10
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=10.0V
VGS=6.0V
VGS=5.0V
VGS=4.0V
VGS=7.0V
Ta=25°C
Pulsed
0.001
0.01
0.1
1
10
100
0 1 2 3 4 5 6 7 8 9 10
Drain Currnt : I
D
[A]
Gate-Source Voltage : VGS [V]
Fig.3 Typical Transfer Characteristics
VDS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0
1
2
3
4
5
-50 -25 0 25 50 75 100 125 150
Gate Threshold Voltage : V
GS
(th) [V]
Channel Temperature : Tch [℃]
Fig.4 Gate Threshold Voltage vs. Channel Temperature
VDS=10V
I
D
=1mA
pulsed
0.01
0.1
1
10
0.1 1 10 100
Static Drain-Source On-State Resistance
R
DS
(on) [W]
Drain Current : ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
VGS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0
0.2
0.4
0.6
0.8
1
1.2
-50 -25 0 25 50 75 100 125 150
Static Drain-Source On-State Resistance
R
DS
(on) [W]
Channel Temperature : Tch [℃]
Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
VGS=10V
pulsed
ID=5A
ID=10A
3/6
2011.10 - Rev.A
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