ROHM R6006AND Technical data

Data Sheet

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© 2011 ROHM Co., Ltd. All rights reserved.

10V Drive Nch MOSFET

R6006AND

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) High-speed switching.

3) Wide SOA.

4) Drive circuits can be simple.

5) Parallel use is easy.

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TL
Basic ordering unit (pieces) 2500

R6006AND 

CPT3

(SC-63)
<SOT-428>

(1) Gate
(2) Drain
(3) Source

0.75

6.5

5.1

0.9

0.65

2.30.9

(1)

(3)

(2)

2.3

0.5

1.5

5.5

2.3

1.5

0.8Min.

0.5

1.0

9.5

2.5

∗1

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit
Drain-source voltage V
Gate-source voltage V

Drain current
Source current

(Body Diode)

Continuous I
Pulsed I
Continuous I

Pulsed I
Avalanche current
Avalanche energy
Power dissipation P
Channel temperature T
Range of storage temperature T

*1 Pw10s, Duty cycle1%
*2 L 500H, V
*3 Limited only by maximum temperature allowed.

=25C

*4 T

C

=50V, RG=25, Tch=25C

DD

 Thermal resistance

Parameter

Symbol Limits Unit

Channel to Case R

DSS
GSS

D

DP

S

SP

I

AS

E

AS

D
ch
stg

th (ch-c)

600 V
30 V

*3
*1

*3
*1
*2
*2

*4

6A

24 A

6A

24 A

3A

2.4 mJ
40 W

150 C

55 to 150 C

3.13 C / W

(1) Gate
(2) Drain
(3) Source

(1) (3)(2)

1 BODY DIODE

1/5

2011.10 - Rev.A

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© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

R6006AND

 Electrical characteristics (Ta = 25C)

Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss
oss
rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=30V, VDS=0V

600 - - V ID=1mA, VGS=0V

- - 100 AVDS=600V, VGS=0V

2.5 - 4.5 V VDS=10V, ID=1mA

-

*

*

l 1.7 - - S VDS=10V, ID=3A

0.9 1.2

ID=3A, VGS=10V



- 460 - pF VDS=25V

- 370 - pF VGS=0V

- 24 - pF f=1MHz

- 22 - ns VDD 300V, ID=3A

*

- 36 - ns VGS=10V

*

- 50 - ns RL=100

*

- 35 - ns RG=10

*

- 15 - nC VDD 300V

*

-4-nCI

*

-7-nCV

*

D

GS

=6A

=10V

Body diode characteristics (Source-Drain)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.5 V IS=6A, VGS=0V

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2011.10 - Rev.A