ROHM R6006AND Technical data

Data Sheet

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10V Drive Nch MOSFET

R6006AND

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) High-speed switching.

3) Wide SOA.

4) Drive circuits can be simple.

5) Parallel use is easy.

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TL
Basic ordering unit (pieces) 2500

R6006AND 

CPT3

(SC-63)
<SOT-428>

(1) Gate
(2) Drain
(3) Source

0.75

6.5

5.1

0.9

0.65

2.30.9

(1)

(3)

(2)

2.3

0.5

1.5

5.5

2.3

1.5

0.8Min.

0.5

1.0

9.5

2.5

∗1

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit
Drain-source voltage V
Gate-source voltage V

Drain current
Source current

(Body Diode)

Continuous I
Pulsed I
Continuous I

Pulsed I
Avalanche current
Avalanche energy
Power dissipation P
Channel temperature T
Range of storage temperature T

*1 Pw10s, Duty cycle1%
*2 L 500H, V
*3 Limited only by maximum temperature allowed.

=25C

*4 T

C

=50V, RG=25, Tch=25C

DD

 Thermal resistance

Parameter

Symbol Limits Unit

Channel to Case R

DSS
GSS

D

DP

S

SP

I

AS

E

AS

D
ch
stg

th (ch-c)

600 V
30 V

*3
*1

*3
*1
*2
*2

*4

6A

24 A

6A

24 A

3A

2.4 mJ
40 W

150 C

55 to 150 C

3.13 C / W

(1) Gate
(2) Drain
(3) Source

(1) (3)(2)

1 BODY DIODE

1/5

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Data Sheet

R6006AND

 Electrical characteristics (Ta = 25C)

Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss
oss
rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=30V, VDS=0V

600 - - V ID=1mA, VGS=0V

- - 100 AVDS=600V, VGS=0V

2.5 - 4.5 V VDS=10V, ID=1mA

-

*

*

l 1.7 - - S VDS=10V, ID=3A

0.9 1.2

ID=3A, VGS=10V



- 460 - pF VDS=25V

- 370 - pF VGS=0V

- 24 - pF f=1MHz

- 22 - ns VDD 300V, ID=3A

*

- 36 - ns VGS=10V

*

- 50 - ns RL=100

*

- 35 - ns RG=10

*

- 15 - nC VDD 300V

*

-4-nCI

*

-7-nCV

*

D

GS

=6A

=10V

Body diode characteristics (Source-Drain)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.5 V IS=6A, VGS=0V

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Data Sheet

R6006AND

Electrical characteristic curves

0

0.5

1

1.5

2

2.5

3

-50 0 50 100 150

V

GS

= 10V

Pulsed

ID= 3.0A

ID= 6.0A

0.001

0.01

0.1

1

10

100

0.1 1 10 100 1000

PW=100us

PW=10ms

Operation in this
area is limited
by R

DS(ON)

PW=1ms

Ta=25℃
pulsed

Fig.1 Maximum Safe Operating Aera

DRAIN-SOURCE VOLTAGE : VDS ( V )

DRAIN CURRENT : I

D

(A)

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅰ)

VGS=10.0V

VGS=6.0V

VGS=7.0V

VGS=5.0V

VGS=4.5V

VGS=8.0V

VGS=6.5V

Ta=25℃
pulsed

0

1

2

3

4

5

6

0 1 2 3 4 5 6 7 8 9 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.3 Typical Output Characteristics (Ⅱ)

VGS=10.0V

VGS=6.0V

VGS=6.5V

VGS=5.0V

VGS=4.5V

VGS=7.0V

VGS=8.0V

Ta=25℃
pulsed

0.001

0.01

0.1

1

10

100

0 1 2 3 4 5 6 7

VDS= 10V
Pulsed

Ta=125℃

Ta= 75℃
Ta= 25℃

Ta= -25℃

Fig.4 Typical Transfer Characteristics

GATE-SOURCE VOLTAGE : VGS (V)

DRAIN CURRENT : I

D

(A)

Fig.5 Gate Threshold Voltage

vs. Channel Temperature

0

1

2

3

4

5

6

-50 0 50 100 150

V

DS

= 10V

ID= 1mA

CHANNEL TEMPERATURE: Tch (℃)

GATE THRESHOLD VOLTAGE: V

GS(th)

(V)

0.1

1

10

0.1 1 10 100

V

GS

= 10V

Pulsed

Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current

DRAIN CURRENT : ID (A)

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS(on)

(Ω)

0

0.5

1

1.5

2

2.5

3

0 5 10 15

ID= 3.0A

ID= 6.0A

Ta=25℃
pulsed

Fig.7 Static Drain-Source On-State

Resistance vs. Gate Source

GATE-SOURCE VOLTAGE : VGS (V)

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS(on)

(Ω)

Fig.8 Static Drain-Source On-State

Resistance vs. Channel Temperature

CHANNEL TEMPERATURE: Tch (℃)

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS(on)

(Ω)

0.01

0.1

1

10

100

0.01 0.1 1 10 100

V

DS

= 10V

Pulsed

Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃

Fig.9 Forward Transfer Admittance

vs. Drain Current

DRAIN CURRENT : ID (A)

FORWARD TRANSFER ADMITTANCE :

|Yfs| (S)

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Data Sheet

R6006AND

0.01

0.1

1

10

100

0 0.5 1 1.5

V

GS

= 0V

Pulsed

Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃

Fig.10 Reverse Drain Current vs.

Sourse-Drain Voltage

SOURCE-DRAIN VOLTAGE : VSD (V)

SOURCE CURRENT : I

S

(A)

1

10

100

1000

10000

0.01 0.1 1 10 100 1000

C

iss

C

oss

C

rss

T

a

= 25℃

f= 1MHz
VGS= 0V

Fig.11 Typical Capacitance vs.

Drain-Source Voltage

DRAIN-SOURCE VOLTAGE : VDS (V)

CAPACITANCE : C (pF)

Fig.12 Dynamic Input Characteristics

TOTAL GATE CHARGE : Qg (nC)

GATE-SOURCE VOLTAGE : V

GS

(V)

10

100

1000

0.1 1 10 100

T

a

= 25℃

di / dt= 100A / μs
V

GS

= 0V

Pulsed

Fig.13 Reverse Recovery Time

vs.Source Current

SOURCE CURRENT : IS (A)

REVERSE RECOVERY TIME: t

rr

(ns)

1

10

100

1000

10000

0.01 0.1 1 10 100

t

d(off)

T

a

= 25℃

V

DD

= 300V

V

GS

= 10V

R

G

= 10Ω

Pulsed

t

f

t

r

t

d(on)

Fig.14 Switching Characteristi cs

DRAIN CURRENT : ID (A)

SWITCHING TIME : t (ns)

0.0001

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Ta = 25°C
Single Pulse
Rth(ch-a)(t) = R(t)×Rth(ch-a)

Rth(ch-a) = 86.9°C/W

Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

PULSE WIDTH : Pw(s)

NORMARIZED TRANSIENT THERMAL

RESISTANCE : r (t)

0

2

4

6

8

10

12

0 1 2 3 4 5 6 7 8 9 1011121314151617

Ta= 25℃
VDD= 300V

ID= 6A
Pulsed

4/5

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Data Sheet

R6006AND

F

it

%

V
V

Fig.2-2 Gate Charge Waveform

V

F

S

 Measurement circuits

VGS

RG

ig.1-1 Switching Time Measurement Circu

V

GS

I

G(Const.)

R

G

ig.2-1 Gate Charge Measurement Circuit

I

D.U.T.

I

D.U.T.

Pulse width

D

VDS

RL

50%

10%

GS
DS

10% 10%

VDD

t

d(on)

t

on

Fig.1-2 Switching Waveforms

V

G

D

V

D

R

L

V

DD

GS

QgsQ

90%

50%

90% 90

t

d(off)

t

r

t

off

Q

g

gd

Charge

t

f

V

GS

R

G

D.U.T.

I

AS

L

DD

V

Fig.3-1 Avalanche Measurement Circuit

V

DS

V(BR)DSS

IAS

VDD

EAS =

1

L

2

V(BR)DSS

2

I

AS

V

(BR)DSS

-

VDD

Fig.3-2 Avalanche Waveform

5/5

2011.10 - Rev.A

Notes

Notice

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