ROHM IMX8 Technical data

IMX8

Transistors

General purpose (dual transistors)

IMX8

zFeatures

1) Tw o 2SC3906K chips in an SMT p ackage.

2) High breakdown voltage.

zPackage, marking, and packaging specifications

Part No.

Package

Marking

Code

Basic ordering unit (pieces)

IMX8

SMT6

X8
T108
3000

zEquivalent circuit

(5) (6)

(4)

zExternal dimensions (Unit : mm)

)

6

(

0.3

)

5

(
)

4

(

1.6

2.8

0.15

ROHM : SMT6
EIAJ : SC-74

0.3Min.

0~0.1

)

1

(

0.95

)

1.9

2.9

2

(

0.95

)

3

(

1.1

0.8

Each lead has same dimensions

2

Tr

Tr

1

(1)(2)(3)

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature

∗

200mW per element must not be exceeded.

V

CBO

V

CEO

V

EBO

I

Pc

Tj

Tstg

Limits

120
120

5

C

50

300(TOTAL)

150

−55 to +150

Unit

V
V
V

mA

mW

°C
°C

∗

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

V

−

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency f
Collector-emitter saturation voltage

∗

Transition frequency of the device

BV
BV
BV

V

CBO
CEO
EBO

I

CBO

I

EBO

h

FE
T

CE(sat)

120
120

180

−

−

−

−

−

5

−

−

− 140 − MHz

−−0.5 V IC/IB=10mA/1mA

0.5

−

0.5

−

820

−

µA
µA

I

C

=50µA

V

I

C

=1mA

V

I

E

=50µA

V

CB

=100V

V

EB

−

=4V

CE

=6V, IC=2mA

V
V

CE

=12V, IE= −2mA, f=100MHz

Rev.A 1/2

∗

IMX8

)

s

0

s

nt

)

)

)

)

e

t

)

e

Transistors

zElectrical characteristics

10

25.0

(mA)

C

COLLECTOR CURRENT : I

22.5

8

20.0

17.5

6

15.0

12.5

10.0

4

7.5

5.0

2

2.5

IB=0µA

0

4 8 12 16 2

COLLECTOR TO EMITTER VOLTAGE : V

Ta=25

°C

CE

(V

Fig.1 Ground emitter output characteristic

(V

0.5

CE(sat)

0.2

0.1

0.05

0.02

COLLECTOR SATURATION VOLTAGE : V

12 510

IC/I

B

=

50

20

10

COLLECTOR CURRENT : I

25

=

Ta

20 50

C

(mA)

°C

Fig.4 Collector-emitter saturation voltag
vs. collector current ( )

Ta=25

°C

ob(pF

20

10

f=1MHz

E=

0A

I

50

20

(mA)

C

10

5

2
1

0.5

COLLECTOR CURRENT : I

0.2

0.1
0

0.2 0.6 0.4 0.8 1.0 1.2 1.4 1.6

BASE TO EMITTER VOLTAGE : V

Ta

=

25

°C

V

CE

=

6V

BE

(V)

Fig.2 Ground emitter propagation characteristic

(V

CE(sat)

0.5

IC/IB=10

0.2

0.1

0.05

°C

100

=

Ta

°C

25

°C

−40

0.02

COLLECTOR SATURATION VOLTAGE : V

12 510

COLLECTOR CURRENT : I

20 50

C

(mA)

Fig.5 Collector-emitter saturation voltag
vs. collector current ( )

Ta=25

°C

(pF

ib

20

10

f=1MHz

C

=

0A

I

Ta=25

°C

5

500

FE

200

100

DC CURRENT GAIN : h

50

0.2 0.5

12 510

COLLECTOR CURRENT : I

Fig.3 DC current gain vs. collector curre

V

CE

=

6V

°C

25

=

Ta

(MHz)

500

T

200

100

50

TRANSITION FREQUENCY : f

−0.5 −1 −2 −5 −10 −20 −50
COLLECTOR CURRENT : I

V

V

CE

20 50

C (mA)

E

(mA)

3

V

=

1V

Fig.6 Gain bandwidth product vs. emitter curren

5

2

1

COLLECTOR OUTPUT CAPACITANCE : C

−0.5 1 2 5 10 20
COLLECTOR TO BASE VOLTAGE : V

CB

(V

Fig.7 Collector output capacitance
vs. collector-base voltage

Rev.A 2/2

5

2

EMITTER INPUT CAPACITANCE : C

1

−0.5 1 2 5 10 20
EMITTER TO BASE VOLTAGE : V

Fig.8 Emitter input capacitance
vs. emitter-base voltage

EB

(V)

Appendix

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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

Notes

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1