ROHM IMX8 Technical data

IMX8

Transistors

General purpose (dual transistors)

IMX8

zFeatures

1) Tw o 2SC3906K chips in an SMT p ackage.

2) High breakdown voltage.

zPackage, marking, and packaging specifications

Part No.

Package

Marking

Code

Basic ordering unit (pieces)

IMX8

SMT6

X8
T108
3000

zEquivalent circuit

(5) (6)

(4)

zExternal dimensions (Unit : mm)

)

6

(

0.3

)

5

(
)

4

(

1.6

2.8

0.15

ROHM : SMT6
EIAJ : SC-74

0.3Min.

0~0.1

)

1

(

0.95

)

1.9

2.9

2

(

0.95

)

3

(

1.1

0.8

Each lead has same dimensions

2

Tr

Tr

1

(1)(2)(3)

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature

∗

200mW per element must not be exceeded.

V

CBO

V

CEO

V

EBO

I

Pc

Tj

Tstg

Limits

120
120

5

C

50

300(TOTAL)

150

−55 to +150

Unit

V
V
V

mA

mW

°C
°C

∗

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

V

−

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency f
Collector-emitter saturation voltage

∗

Transition frequency of the device

BV
BV
BV

V

CBO
CEO
EBO

I

CBO

I

EBO

h

FE
T

CE(sat)

120
120

180

−

−

−

−

−

5

−

−

− 140 − MHz

−−0.5 V IC/IB=10mA/1mA

0.5

−

0.5

−

820

−

µA
µA

I

C

=50µA

V

I

C

=1mA

V

I

E

=50µA

V

CB

=100V

V

EB

−

=4V

CE

=6V, IC=2mA

V
V

CE

=12V, IE= −2mA, f=100MHz

Rev.A 1/2

∗

IMX8

)

s

0

s

nt

)

)

)

)

e

t

)

e

Transistors

zElectrical characteristics

10

25.0

(mA)

C

COLLECTOR CURRENT : I

22.5

8

20.0

17.5

6

15.0

12.5

10.0

4

7.5

5.0

2

2.5

IB=0µA

0

4 8 12 16 2

COLLECTOR TO EMITTER VOLTAGE : V

Ta=25

°C

CE

(V

Fig.1 Ground emitter output characteristic

(V

0.5

CE(sat)

0.2

0.1

0.05

0.02

COLLECTOR SATURATION VOLTAGE : V

12 510

IC/I

B

=

50

20

10

COLLECTOR CURRENT : I

25

=

Ta

20 50

C

(mA)

°C

Fig.4 Collector-emitter saturation voltag
vs. collector current ( )

Ta=25

°C

ob(pF

20

10

f=1MHz

E=

0A

I

50

20

(mA)

C

10

5

2
1

0.5

COLLECTOR CURRENT : I

0.2

0.1
0

0.2 0.6 0.4 0.8 1.0 1.2 1.4 1.6

BASE TO EMITTER VOLTAGE : V

Ta

=

25

°C

V

CE

=

6V

BE

(V)

Fig.2 Ground emitter propagation characteristic

(V

CE(sat)

0.5

IC/IB=10

0.2

0.1

0.05

°C

100

=

Ta

°C

25

°C

−40

0.02

COLLECTOR SATURATION VOLTAGE : V

12 510

COLLECTOR CURRENT : I

20 50

C

(mA)

Fig.5 Collector-emitter saturation voltag
vs. collector current ( )

Ta=25

°C

(pF

ib

20

10

f=1MHz

C

=

0A

I

Ta=25

°C

5

500

FE

200

100

DC CURRENT GAIN : h

50

0.2 0.5

12 510

COLLECTOR CURRENT : I

Fig.3 DC current gain vs. collector curre

V

CE

=

6V

°C

25

=

Ta

(MHz)

500

T

200

100

50

TRANSITION FREQUENCY : f

−0.5 −1 −2 −5 −10 −20 −50
COLLECTOR CURRENT : I

V

V

CE

20 50

C (mA)

E

(mA)

3

V

=

1V

Fig.6 Gain bandwidth product vs. emitter curren

5

2

1

COLLECTOR OUTPUT CAPACITANCE : C

−0.5 1 2 5 10 20
COLLECTOR TO BASE VOLTAGE : V

CB

(V

Fig.7 Collector output capacitance
vs. collector-base voltage

Rev.A 2/2

5

2

EMITTER INPUT CAPACITANCE : C

1

−0.5 1 2 5 10 20
EMITTER TO BASE VOLTAGE : V

Fig.8 Emitter input capacitance
vs. emitter-base voltage

EB

(V)