ROHM IMX25 Technical data
General purpose transistor
(isolated dual transistors)
IMX25
Features Dimensions (Unit : mm)
1) Two 2SD2704K chips in a SMT package.
2) Mounting possi ble
3) Transistor
elements are independent, eliminating interference.
with SMT3 automatic mounting machine.
4) Mounting cost and area can be cut in half.
Structure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr1 and Tr2.
Absolute maximum ratings (Ta=25C) Inner circuit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗
Parameter Symbol Limits Unit
V
CBO
CEO
V
V
EBO
I
C
50 V
20 V
25 V
300 mA
Pd 300(TOTAL) mW
Tj 150
Tstg
200mW per element must not be exceeded.
−55 to +150 °C
∗
°C
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
Symbol
BV
BV
BV
I
I
V
CE(sat)
Cob
Ron
CBO
EBO
h
FE
f
CBO
CEO
EBO
T
Min.
Typ. Max. Unit Conditions
50
20
25
−
−
−
820
−
−
−
50
35
3.9
0.7
−
−
−
0.1
−
0.1
−
100
2700
−
V
−
V
−
V
−
μA
μA
mV
−
MHz
−
pF
−
−
Ω
Packaging specifications
Taping
T110
3000
Part No.
IMX25
Packaging type
Code
Basic ordering unit (pieces)
2.9±0.2
1.9±0.2
0.95 0.95
(5)
(6)
(4)
−0.1
+0.2
1.6
(1)
(2)
(3)
+0.1
0.3
All terminals have same dimensions
ROHM : SMT6
EIAJ : SC-74
−0.05
C
=10μA
I
C
=1mA
I
E
=10μA
I
V
CB
=50V
V
EB
=25V
C/IB
=30mA/3mA
I
CE
=2V, IC=4mA
V
V
CE
=6V, IE=−4mA, f=10MHz
CB
=10V, IE=0A, f=1MHz
V
B
=5mA, Vi=100mVrms, f=1kHz
I
2.8±0.2
0.15
Abbreviated symbol: X25
1.1
0.8±0.1
+0.1
−0.06
(4) (5) (6)
Tr
2
(3) (2) (1)
+0.2
−0.1
0 to 0.1
0.3 to 0.6
Tr
1
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2010 ROHM Co., Ltd. All rights reserved.
2010.02 - Rev.B
.2
(mA)
n
(mA)
n
.2
0
10000
DC CURRENT GAIN : h
vs. collector current ( )
0
10000
10000
e
vs. collector current ( )
)
10000
)
e
vs. collector current ( )
10000
)
e
vs. collector current ( )
e
0
V)
e
V)
0
Electrical characteristic curves
1000
C
100
10
0.1
COLLECTOR CURRENT : I
0.1
0 0.2 0.4 0.6 0.8 1 1
BASE TO EMITTER VOLTAGE : V
Ta=125°C
25°C
Fig.1 Grounded emitter propagatio
characteristics ( Ι )
Ta=125°C
FE
1000
Ta=25°C
Ta= −40°C
−40°C
BE(ON)
VCE=2V
(V)
VCE=6V
Data Sheet IMX25
1000
C
100
10
0.1
COLLECTOR CURRENT : I
0.1
0 0.2 0.4 0.6 0.8 1 1
BASE TO EMITTER VOLTAGE : V
Ta=125°C
25°C
Fig.2 Grounded emitter propagatio
characteristics ( ΙΙ )
(mV
CE(sat)
1000
100
Ta=125°C
VCE=6V
−40°C
BE(ON)
IC/IB=10/1
(V)
C
(mA)
VCE=2V
Ta=125°C
FE
1000
Ta=25°C
Ta= −40°C
100
10
1 10 100 100
COLLECTOR CURRENT : I
Fig.3 DC current gain
(mV
CE(sat)
1000
100
Ta=125°C
IC/IB=20/1
100
DC CURRENT GAIN : h
10
1 10 100 100
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain
vs. collector current ( )
(mV
CE(sat)
1000
100
10
COLLECTOR SATURATION VOLTAGE : V
Ta=125°C
Ta=25°C
Ta
= −
40°C
1
1 10 100 1000
COLLECTOR CURRENT : I
Fig.7 Collector-emitter saturation voltag
IC/IB=50/1
C
(mA)
10
1
COLLECTOR SATURATION VOLTAGE : V
1 10 100 1000
COLLECTOR CURRENT : I
Fig.5 Collector-emitter saturation voltag
10000
(m
BE(sat)
Ta
1000
Ta=125°C
100
BASE SATURATION VOLTAGE : V
1 10 100 100
COLLECTOR CURRENT : I
Fig.8 Base-emitter saturation voltag
vs. collector current ( )
Ta
Ta=25°C
= −
40°C
C (mA)
10
1
COLLECTOR SATURATION VOLTAGE : V
1 10 100 1000
COLLECTOR CURRENT : I
Fig.6 Collector-emitter saturation voltag
IC/IB=10/1
= −
40°C
Ta=25°C
C
(mA)
10000
(m
BE(sat)
1000
100
BASE SATURATION VOLTAGE : V
1 10 100 100
COLLECTOR CURRENT : I
Fig.9 Base-emitter saturation voltag
vs. collector current ( )
Ta
Ta
= −
40°C
Ta=125°C
= −
Ta=25°C
40°C
Ta=25°C
C (mA)
IC/IB=20/1
C
(mA)
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2010 ROHM Co., Ltd. All rights reserved.
2010.02 - Rev.B
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