ROHM IMT4 Technical data

Transistors

General purpose (dual transistors)

IMT4

zFeatures

1) Two 2SA1514K chips in an AMT package.

2) High breakdown voltage.

zPackage, marking, and Packaging specifications

Part No.

Package

Marking

Code

Basic ordering unit (pieces)

IMT4

SMT6

T4
T108
3000

zEquivalent circuit

IMT4

(4)

(5) (6)

zExternal dimensions (Unit : mm)

IMT4

ROHM : SMT6
EIAJ : SC-74
JEDEC : SOT-457

0.3

0.15

0.3Min.

)

)

6

1

(

(
)

)

2

5

(

(
)

)

4

3

(

(

1.6

2.8

0~0.1

Each lead has same dimensions

0.95

0.95

0.8

IMT4

1.9

2.9

1.1

Tr

2

(3) (2) (1)

Tr

1

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature

∗

200mW per element must not be exceeded.

CBO

V
V

CEO

V

EBO

I

Pc

Tj

Tstg

C

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency f
Collector-emitter saturation voltage

∗Transition frequency of the device.

BV
BV
BV

V

CBO
CEO
EBO

I

CBO

I

EBO

h

FE
T

CE(sat)

Limits

−120

−120

−5

−50

300 (TOTAL)

150

−55 to +150

−120

−120

−5

180 − 820 − V

−

−

−

−

−

−

−

140

−

−

−

Unit

V
V
V

mA

mW

°C
°C

−

−

−

−0.5

−0.5

−

−0.5

V
V
V

µA
µA

MHz

V

∗

I

C

=

−50µA

C

=

−1mA

I

E

=

−50µA

I

CB

=

−100V

V
V

EB

=

−4V

CE

=

−6V, IC−2mA

V

CE

=

−12V, I

E

=

C/IB

=

−10mA/−1mA

I

2mA, f=100MHz

∗

Rev.A 1/2

Transistors

zElectrical characteristic curves

−10

Ta=25°C

(mA)

−8

C

−6

−4

−2

COLLECTOR CURRENT : I

0 −20−16−12−8−4

COLLECTOR TO EMITTER VOLTAGE : V

Fig.1 Ground emitter output characteristics

Ta=25°C

(V)

CE(sat)

−0.5

−25.0

22.5

−

20.0

−

−17.5

15.0

−

−12.5

−10.0

−7.5

−5.0

−2.5µA

IB=0

(V)

CE

−50

−20

(mA)

C

−10

−5

−2

−1

−0.5

−0.2

COLLECTOR CURRENT : I

−0.1
0 −1.6−1.4−1.2−1.0−0.8−0.6−0.4−0.2

BASE TO EMITTER VOLTAGE : V

Fig.2 Ground emitter propagation
characteristics

Ta=25°C
VCE= −6V

)

Z

(MH

500

Ta=25°C
VCE= −6V

BE

(V)

Ta=25°C

500

VCE= −1V

200

100

DC CURRENT GAIN : hFE

50

−0.2 −0.5 −1 −2 −5 −10 −20 −50

COLLECTOR CURRENT : I

Fig.3 DC current gain vs. collector current

20

Ta=25°C

(pF)

f=1MH

Z

IE=0A

10

IMT4

−

3V

C

(mA)

−

5V

−0.2

IC/IB=50/1

−0.1

−0.05

−0.2 −0.5 −1 −2 −5 −10 −20 −50

COLLECTOR SATURATION VOLTAGE : V

20/1

10/1

COLLECTOR CURRENT : I

C

(mA)

Fig.4 Collector-Emitter saturation voltage
vs. collector current

200

100

50

TRANSITION FREQUENCY : fT

0.5 1 2 5 10 20 50

EMITTER CURRENT : I

Fig.5 Transition frequency
vs. emitter current

E

(mA)

5

2

1

COLLECTOR OUTPUT CAPACITANCE : Cob

−0.5 −1 −2 −5 −10 −20

COLLECTOR TO BASE VOLTAGE : V

Fig.6 Collector output capacitance
vs. collector-base voltage

Cob

CB

(V)

20

Cib

10

5

2

EMITTER INPUT CAPACITANCE : Cib (pF)

1

−0.5 −1 −2 −5 −10 −20

EMITTER TO BASE VOLTAGE : V

Fig.7 Emitter input capacitance
vs. emitter-base voltage

Ta=25
f=1MH
IC=0A

EB

(V)

°C

Z

Rev.A 2/2