ROHM IMT17 Technical data

IMT17

Transistors

General purpose transistor
(isolated dual transistors)

IMT17

zApplications zExternal dimensions (Unit : mm)
General purpose small signal amplifier

zFeatures

1) Two 2SA1036K chips in an SMT package.

2) Same size as SMT3 package, so same mounting
machine can be used for both.

3) Transistor elements are independent, eliminating
interference.

4) High collector current. I

C

= −500mA

5) Mounting cost, and area, are reduced by one half.

zStructure zPackaging specifications

Epitaxial planar type
PNP silicon transistor

The following characteristics apply to both Tr

1

and Tr2.

Part No.
IMT17

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature

200mW per element must not be exceeded.

∗

V

CBO

CEO

V

EBO

V

I

C

Pd

Tj 150

Tstg −55 to +150

Limits

−60 V

−50 V

−5V

−500 mA

300(TOTAL) mW

Unit

°C
°C

zElectrical characteristics(Ta=25°C)

Min.

Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance

Measured using pulse current.

∗

BV
BV
BV

V

CBO

CEO

EBO

I

CBO

I

EBO

CE(sat)

h

FE

f

T

Cob

Typ. Max. Unit Conditions

−

−60

−50

−5

−

−

−

120

−

−

200

−

VIC= −100µA

−0.1

−0.1

−0.6

390

V

−

V

−

µA
µA

V

−

MHz

−

pF

−

−

−

−

−

−

−

7

Rev.A 1/2

±

0.2

2.9

±

0.2

1.9

0.95 0.95

(5)

(6)

(4)

0.1

0.2

−

+

1.6

(1)

(2)

(3)

+0.1

0.3

−0.05

All terminals have same dimensions

ROHM : SMT6
EIAJ : SC-74

Abbreviated symbol: T17

Packaging type Taping
Code
Basic ordering unit (pieces)

∗

C

= −1mA

I

E

= −100µA

I
V= −30V
V= −4V

C/IB

= −500mA/ −50mA

I

CE

= −3V, IC= −100mA

V
VCE= −5V, IE= 20mA, f= 100MHz

CB

= −10V, IE= 0A, f= 1MHz

V

0.2

±

2.8

0.15

1.1

+0.1

−0.06

+0.2

−0.1

0.8

±

0.1

(4) (5) (6)

0 to 0.1

Tr

0.3 to 0.6

2

(3) (2) (1)

Tr

1

T110
3000

∗

IMT17

.2

)

)

V)

0

0

)

)

0

)

0

)

)

0

Transistors

zElectrical characteristic curves

−500

Ta=100

−200

−100

(mA)

C

−50

−20

−10

−5

−2

−1

−0.5

COLLECTOR CURRENT : I

−0.2

−0.1

−0.20

BASE TO EMITTER VOLTAGE : V

Fig.1 Grounded emitter propagation
characteristics

1000

500

FE

200

100

50

DC CURRENT GAIN : h

20

−1 −2 −5 −10 −20 −50−100−200−500−100

Fig.4 DC current gain vs. collector
current ( Ι )

−1.0

(V

CE(sat)

−0.5

−0.3

−0.2

−0.1

Ta=100

−0.05

−0.03

−0.02

−0.01

−1 −2−5−10 −20 −50−100 −200 −500−100

COLLECTOR SATURATION VOLTAGE : V

Fig.7 Collector-emitter saturation
voltage vs. collector current (ΙΙ)

V

−3V

−1V

Ta=25

C

(mA)

C

(mA)

CE

lC/lB=10

°C

25

°C

−

55

°C

−0.4−0.6−0.8−1.0−1.2 −1.4−1.6 −1.8−2.0−2

VCE= −5V

COLLECTOR CURRENT : I

°C

25

°C

−55

°C

COLLECTOR CURRENT : I

=

−

BE (V

°C

−100

3V

Ta=25

−80

(mA)

C

−60

−40

−20

COLLECTOR CURRENT : I

0

0 −2 −4 −5

COLLECTOR TO EMITTER VOLTAGE : V

Fig.2 Grounded emitter output
characteristics ( Ι )

1000

500

FE

200

100

50

DC CURRENT GAIN : h

20

Fig.5 DC current gain vs. collector
current (ΙΙ)

(MHz)

T

1000

500

200

100

50

TRANSITION FREQUENCY : f

0.5 20

Fig.8 Gain bandwidth product vs.
emitter current

°C

−1mA

−1

−0.9mA

−0.8mA

−0.7mA

−3

−0.6mA

−0.5mA

−0.4mA

−0.3mA

−0.2mA

−0.1mA

IB=0

VCE= −3V

Ta=100

°C

25

°C

−55

°C

−1 −2 −5 −10 −20 −50−100−200 −500−100

COLLECTOR CURRENT : I

C

(mA)

Ta=25

VCE= −5V

12 510

EMITTER CURRENT : I

E

(mA)

−

500

(mA)

−

400

C

−

300

−

200

−

100

COLLECTOR CURRENT : I

A

CE

(V

0

0

COLLECTOR TO EMITTER VOLTAGE : V

Fig.3 Grounded emitter output
characteristics (ΙΙ)

(V

CE(sat)

−1

−0.5

−0.2

−0.1

IC/I

B

−0.05

−0.02

−1 −2 −5 −10 −20 −50−100−200 −500

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

Fig.6 Collector-emitter saturation
voltage vs. collector current ( Ι

°C

(pF

(pF

100

50

20

10

5

2

−0.5 −20

5

COLLECTOR OUTPUT CAPACITANCE : Cob

−1 −2 −5 −10

EMITTER INPUT CAPACITANCE : Cib

COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V

Fig.9 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance vs.
emitter-base voltage

−3.5mA

−3.0mA

−2.5mA

−0.5mA

I

B

=0A

Ta=25

C

(mA)

E

=

0A

C

=

0A

CB
EB

°C

−10−5

CE

(

°C

°C

−5

(V)
(V)

Ta=25

−5.0mA

−4.5mA

−4.0mA

−2.0mA

−1.5mA

−1.0mA

=

50

20
10

Ta=25

f=1MHz

I
I

Rev.A 2/2