ROHM EMH3, IMH3A, UMH3N Schematic [ru]

EMH3 / UMH3N / IMH3A
Transistors

General purpose (dual digital transistors)

EMH3 / UMH3N / IMH3A

zFeatures
1) T wo DTAK13T s chip s in a EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines.
3) Transistor element s are independent, eliminating interference.
zStructure
Epitaxial planar type NPN silicon transistor
The following characteristics apply to both DTr
1 and DTr2.
zEquivalent circuit
EMH3 / UMH3N IMH3A
(3) (2) (1)
1
R
DTr
DTr
2
(4) (5) (6)
R1=4.7k R1=4.7k
1
R
1
DTr
2
(4) (5) (6)
1
R
DTr
R
1
(3) (2) (1)
1
zPackaging specifications
Package Taping
Type EMH3
UMH3N IMH3A
Code Basic ordering
unit (pieces)
T2R
8000
TN
3000
T110
3000
Rev.A 1/2
zExternal dimensions (Unit : mm)
EMH3
Abbreviated symbol : H3
ROHM : EMT6
UMH3N
0.2
0.15
0.1Min.
ROHM : UMT6 EIAJ : SC-88
Abbreviated symbol : H3
IMH3A
0.3
0.15
0.3to0.6
ROHM : SMT6 EIAJ : SC-74
Abbreviated symbol : H3
(3)
(4)
0.5
1.0
(2)(5)
0.22
0.13
)
5
(
0.5
(1)
(6)
1.2
1.6
0.5
Each lead has same dimensions
)
)
3
4
(
(
)
6
(
)
6
( )
5
( )
4
(
0.65
)
2
(
)
1
(
0.65
1.25
2.1
0.7
0to0.1
Each lead has same dimensions
)
1
(
0.95
)
2
(
0.95
)
3
(
1.6
2.8
0.8
0to0.1
Each lead has same dimensions
1.6
1.3
2.0
0.9
2.9
1.9
1.1
EMH3 / UMH3N / IMH3A
Transistors
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector
power dissipation
EMH3,UMH3N 150 (TOTAL)
IMH3A 300 (TOTAL) Junction temperature Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
V
CBO
CEO
V
EBO
V
I
Pc
Tj 150 °C
Tstg 55 to +150 °C
zElectrical characteristics (Ta = 25°C)
Parameter Symbol
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance
Transition frequency of the device
zElectrical characteristic curves
1k
500
200
100
50
20 10
5
DC CURRENT GAIN : hFE
2 1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
Ta=100°C
25°C
40°C
COLLECTOR CURRENT : IC
VCE=
(A)
Fig.1 DC current gain vs. collector current
5V
C
BV BV BV
I I
V
CBO
CEO
EBO
CBO
EBO
CE(sat)
h
FE
f
T
R
1
Limits
Unit 50 V 50 V
5V
100 mA
mW
Typ.
Min.
50 50
5
100
3.29
1
(V)
500m
CE(sat)
200m
100m
50m
20m
10m
5m
2m 1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Max. Unit Conditions
250 250
4.7
0.5
0.5
0.3
600
6.11
Ta=100°C
25°C
40°C
VI
V
V
µA µA
V
VCE=10V, IE=−5mA, f=100MHz
MHz
k
lC/lB=20
C
(A)
Fig.2 Collector-emitter saturation voltage vs. collector current
1
2
C
=50µA
C
=1mA
I
E
=50µA
I
CB
=50V
V
EB
=4V
V I
C/IB
=5mA/0.25mA
V
CE
=5V, IC=1mA
Rev.A 2/2
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