EMH3 / UMH3N / IMH3A
Transistors
General purpose (dual digital transistors)
EMH3 / UMH3N / IMH3A
zFeatures
1) T wo DTAK13T s chip s in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor element s are independent, eliminating
interference.
zStructure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both DTr
1 and DTr2.
zEquivalent circuit
EMH3 / UMH3N IMH3A
(3) (2) (1)
1
R
DTr
DTr
2
(4) (5) (6)
R1=4.7kΩ R1=4.7kΩ
1
R
1
DTr
2
(4) (5) (6)
1
R
DTr
R
1
(3) (2) (1)
1
zPackaging specifications
Package Taping
Type
EMH3
UMH3N
IMH3A
Code
Basic ordering
unit (pieces)
T2R
8000
−
−
TN
3000
−
−
T110
3000
−
−
Rev.A 1/2
zExternal dimensions (Unit : mm)
EMH3
Abbreviated symbol : H3
ROHM : EMT6
UMH3N
0.2
0.15
0.1Min.
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : H3
IMH3A
0.3
0.15
0.3to0.6
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : H3
(3)
(4)
0.5
1.0
(2)(5)
0.22
0.13
)
5
(
0.5
(1)
(6)
1.2
1.6
0.5
Each lead has same dimensions
)
)
3
4
(
(
)
6
(
)
6
(
)
5
(
)
4
(
0.65
)
2
(
)
1
(
0.65
1.25
2.1
0.7
0to0.1
Each lead has same dimensions
)
1
(
0.95
)
2
(
0.95
)
3
(
1.6
2.8
0.8
0to0.1
Each lead has same dimensions
1.6
1.3
2.0
0.9
2.9
1.9
1.1
EMH3 / UMH3N / IMH3A
Transistors
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
EMH3,UMH3N 150 (TOTAL)
IMH3A 300 (TOTAL)
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
∗
V
CBO
CEO
V
EBO
V
I
Pc
Tj 150 °C
Tstg −55 to +150 °C
zElectrical characteristics (Ta = 25°C)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
Transition frequency of the device
∗
zElectrical characteristic curves
1k
500
200
100
50
20
10
5
DC CURRENT GAIN : hFE
2
1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
Ta=100°C
25°C
−40°C
COLLECTOR CURRENT : IC
VCE=
(A)
Fig.1 DC current gain vs. collector
current
5V
C
BV
BV
BV
I
I
V
CBO
CEO
EBO
CBO
EBO
CE(sat)
h
FE
f
T
R
1
Limits
Unit
50 V
50 V
5V
100 mA
mW
Typ.
Min.
50
50
5
−
−
−
100
−
3.29
1
(V)
500m
CE(sat)
200m
100m
50m
20m
10m
5m
2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Max. Unit Conditions
−
−
−
−
−
−
250
250
4.7
0.5
0.5
0.3
600
6.11
Ta=100°C
25°C
−40°C
VI
−
V
−
V
−
µA
µA
V
−
− VCE=10V, IE=−5mA, f=100MHz
MHz
kΩ
lC/lB=20
C
(A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
1
∗
2
∗
C
=50µA
C
=1mA
I
E
=50µA
I
CB
=50V
V
EB
=4V
V
I
C/IB
=5mA/0.25mA
V
CE
=5V, IC=1mA
∗
−
Rev.A 2/2