ROHM EMH2, IMH2A, UMH2N Schematic [ru]
EMH2 / UMH2N / IMH2A
Transistors
General purpose (dual digital transistors)
EMH2 / UMH2N / IMH2A
zFeatures
1) T wo DTC144Es chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor element s are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
The following characteristics apply to both DTr
1 and DTr2.
zEquivalent circuit
EMH2 / UMH2N IMH2A
(3) (2) (1)
DTr
2
(4) (5) (6)
1
R
R
2
R
R1=47kΩ
2
=47kΩ
R
R
2
DTr
1
1
DTr
2
(4) (5) (6)
1
R
R
2
DTr
R
2
R
1
(3) (2) (1)
R
1
=47kΩ
2
=47kΩ
R
1
zPackaging specifications
Type
EMH2
UMH2N
IMH2A
Package
Code T2R T110
Basic ordering
unit (pieces)
8000 3000
Taping
TN
3000
−−
−−
−−
zExternal dimensions (Unit : mm)
EMH2
0.22
0.13
All terminals have same dimensions
Abbreviated symbol : H2
ROHM : EMT6
UMH2N
0.2
0.15
0.1Min.
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : H2
IMH2A
0.3
0.15
0.3to0.6
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : H2
(3)
(4)
(6)
)
4
(
)
5
(
)
6
(
0.5
1.0
1.6
(2)(5)
0.5
(1)
1.2
1.6
0.5
)
3
(
0.65
)
2
(
1.3
)
1
(
1.25
2.1
)
6
(
)
5
(
)
4
(
0.65
0.9
0.7
All terminals have same dimensions
0to0.1
)
1
(
0.95
)
1.9
2
(
0.95
)
3
(
1.6
2.8
0.8
All terminals have same dimensions
0to0.1
2.0
2.9
1.1
Rev.A 1/3
EMH2 / UMH2N / IMH2A
Transistors
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
Supply voltage
Input voltage
Output current
Power
dissipation
EMH2,UMH2N 150 (TOTAL)
IMH2A 300 (TOTAL)
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
∗
V
CC
IN
V
I
O
I
C(Max.)
Pd
Tj
Tstg −55~+150
zElectrical characteristics (Ta = 25°C)
Limits
50 V
40
−10
30
100
150 °C
Unit
V
mA
mW
°C
1
∗
2
∗
Parameter Symbol
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Transition frequency of the device
∗
I(off)
V
V
I(on)
V
O(on)
I
I
O(off)
I
G
I
T
R
1
2
/
R10.8 1 1.2 −−
R
Typ. Max. Unit Conditions
Min.
CC
−
−
0.5
3
−
−
0.1
−
−
−
0.3
0.18
V
V
mA
=5V, IO=100µA
V
O
=0.3V, IO=2mA
V
O/II
=10mA/0.5mA
I
I
=5V
V
−−0.5 VCC=50V, VI=0VµA
V
O
=5V, IO=5mA
68
−
−f
250 − VCE=10V, IE=−5mA, f=100MHz
32.9
47
−
61.1
MH
kΩ
−
Z
∗
−
zElectrical characteristic curves
100
50
20
(V)
I(on)
10
Ta=−40°C
5
2
1
500m
INPUT VOLTAGE : V
200m
100m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
25°C
100°C
OUTPUT CURRENT : I
O
(A)
VO=0.3V
Fig.1 Input voltage vs. output current
(ON characteristics)
10m
VCC=5V
5m
Ta=100°C
2m
25°C
(A)
1m
−40°C
500µ
200µ
100µ
50µ
20µ
10µ
OUTPUT CURRENT : Io
5µ
2µ
1µ
0.5 1.0 1.5 2.0 2.5 3.00
INPUT VOLTAGE : V
Fig.2 Output current vs. input voltage
(OFF characteristics)
I (off)
(V)
1k
500
Ta=100°C
I
200
100
50
20
10
DC CURRENT GAIN : G
25°C
−40°C
5
2
1
100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m
OUTPUT CURRENT : I
Fig.3 DC current gain vs. output
current
VO=5V
O
(A)
Rev.A 2/3
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