EMH15 / IMH15A
Transistors
General purpose (dual digital transistors)
EMH15 / IMH15A
zFeatures
1) Two DTC144T chips in a EMT or SMT package.
zEquivalent circuit
EMH15
(6) (5) (4)
R
1
R
1
(1) (2) (3)
IMH15A
(4) (5) (6)
R
1
R
1
(3) (2) (1)
zAbsolute maximum ratings (Ta=25°C)
C
Limits
50
50
5
100
150(TOTAL)
300(TOTAL)
150
−55
to
+150
Collector-base voltage
Parameter Symbol
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
EMH15
IMH15A
V
V
V
Pc
Tstg
CBO
CEO
EBO
I
Tj
zPackage, marking, and p ackaging specifications
H15
T2R
8000
IMH15A
SMT6
H15
T110
3000
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMH15
EMT6
zElectrical characteristics (T a=25°C)
Parameter Symbol Min. Typ. Max.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
∗Transition frequency of the device.
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
f
T
R
1
Unit
V
V
V
mA
mW
°C
°C
50
50
100
32.9 47 61.1
zDimensions (Unit : mm)
IMH15A
ROHM : SMT6
EIAJ : SC-74
EMH15
−
−
5
−
−
−
−
−
250
250
−
0.5
−
0.5
−
0.3
600
Each lead has same dimensions
Each lead has same dimensions
Unit
V
C
=50µA
V
V
µA
µA
V
−
MHz
kΩ
I
C
=1mA
I
E
=50µA
I
V
CB
EB
V
I
C/IB
V
CE/IC
V
CE
−
−
−
−
Conditions
=50V
=4V
=10mA/1mA
=5V/1mA
=10V, IE= −5mA, f=100MHz
−
∗
Rev.B 1/2
EMH15 / IMH15A
Transistors
zElectrical characteristics curves
1k
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : I
Ta=100°C
25°C
−40°C
V
CE
C
(A)
Fig.1 DC current gain vs. collector
current
=
5V
1
(V)
500m
CE(sat)
200m
100m
50m
20m
10m
5m
2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR SATURATION VOLTAGE : V
Ta=100°C
25°C
−40°C
COLLECTOR CURRENT : I
lC/lB=10
C
(A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Rev.B 2/2