ROHM EMH15, IMH15A Schematic [ru]

EMH15 / IMH15A
Transistors
General purpose (dual digital transistors)
EMH15 / IMH15A
zFeatures
zEquivalent circuit
EMH15
(6) (5) (4)
R
1
R
1
(1) (2) (3)
IMH15A
(4) (5) (6)
R
1
R
1
(3) (2) (1)
zAbsolute maximum ratings (Ta=25°C)
C
Limits
50 50
5
100 150(TOTAL) 300(TOTAL)
150
55
to
+150
Collector-base voltage
Parameter Symbol
Collector-emitter voltage Emitter-base voltage Collector current
Collector power dissipation Junction temperature
Storage temperature
EMH15
IMH15A
V V V
Pc
Tstg
CBO CEO EBO
I
Tj
zPackage, marking, and p ackaging specifications
H15 T2R
8000
IMH15A
SMT6
H15 T110 3000
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMH15
EMT6
zElectrical characteristics (T a=25°C)
Parameter Symbol Min. Typ. Max. Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance
Transition frequency of the device.
BV BV BV
V
CBO CEO EBO
I
CBO
I
EBO
CE(sat)
h
FE
f
T
R
1
Unit
V V V
mA
mW
°C °C
50 50
100
32.9 47 61.1
zDimensions (Unit : mm)
IMH15A
ROHM : SMT6 EIAJ : SC-74
EMH15
5
250 250
0.5
0.5
0.3
600
Each lead has same dimensions
Each lead has same dimensions
Unit
V
C
=50µA V V
µA µA
V
MHz
k
I
C
=1mA
I
E
=50µA
I V
CB
EB
V I
C/IB
V
CE/IC
V
CE
Conditions
=50V =4V
=10mA/1mA
=5V/1mA
=10V, IE= −5mA, f=100MHz
Rev.B 1/2
EMH15 / IMH15A
Transistors
zElectrical characteristics curves
1k
500
FE
200 100
50
20 10
5
DC CURRENT GAIN : h
2 1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : I
Ta=100°C
25°C
40°C
V
CE
C
(A)
Fig.1 DC current gain vs. collector
current
=
5V
1
(V)
500m
CE(sat)
200m 100m
50m
20m 10m
5m
2m 1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR SATURATION VOLTAGE : V
Ta=100°C
25°C
40°C
COLLECTOR CURRENT : I
lC/lB=10
C
(A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Rev.B 2/2
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