ROHM EMH1, IMH1A, UMH1N Schematic [ru]

EMH1 / UMH1N / IMH1A

Transistors

General purpose (dual digital transistors)

EMH1 / UMH1N / IMH1A

zFeatures

1) Two DTC124E chips in a EMT or UMT or SMT
package.

zCircuit schematic

EMH1 / UMH1N

(3) (2) (1)

R

1

R

2

R

2

R

1

(4) (5) (6)

R

1

=

R

2

=22KΩ

IMH1A

(4) (5) (6)

R

1

R

2

R

(3) (2) (1)

R

1

=

R

2

=22KΩ

R

2

1

zAbsolute maximum ratings (Ta = 25°C)

Supply voltage
Input voltage

Collector current
Power dissipation

Junction temperature
Storage temperature

∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.

Parameter

EMH1 / UMH1N
IMH1A

Symbol

V

CC

V

IN

I

O

I

C(MAX)

Pd

Tj

Tstg

Limits

50
40

−10
30 mAOutput current

100
150(TOTAL)
300(TOTAL)

150

−55

to

+150

zPackage, marking, and packaging specifications

TN

H1

IMH1A

SMT6

H1
T110
3000

Type

Package

Marking

Code

Basic ordering unit (pieces)

EMH1

EMT5

H1

T2R

8000

UMH1N

UMT6

3000

Unit

V
V

mA

mW

°C
°C

zExternal dimensions (Unit : mm)

UMH1N

ROHM : UMT6
EIAJ : SC-88

IMH1A

ROHM : SMT6
EIAJ : SC-74

∗1
∗2

EMH1

ROHM : EMT6

0.2

0.15

0.1Min.

0.3

0.15

0.3to0.6

0.22

0.13

)

5

(

)(

6

(
)(

5
)

4

(4)

(6)

)

)

4

3

(

)

6

(

1.6

2.8

1.2

1.6

0.65

(

)

2

(

1.3

)

1

(

0.65

1.25

2.1

0.9

0.7

0to0.1

Each lead has same dimensions

)

1

(

0.95

2.9

)

1.9

2

(

0.95

)

3

(

1.1

0.8

0to0.1

Each lead has same dimensions

(3)

0.5

1.0

1.6

(2)(5)

0.5

(1)

0.5

Each lead has same dimensions

2.0

Rev.A 1/2

Transistors

zElectrical characteristics (Ta = 25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Input voltage
Output voltage

Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

∗ Characteristics of built-in transistor

zElectrical characteristics curves

100

50

20

(V)

I(on)

10

Ta=−40°C

5

2
1

500m

INPUT VOLTAGE : V

200m
100m

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

25°C

100°C

OUTPUT CURRENT : I

Fig.1 Input voltage vs. output current

(ON characteristics)

1

500m

(V)

200m

O(on)

100m

50m

20m
10m

5m

OUTPUT VOLTAGE : V

2m
1m

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

Ta=100°C

25°C

−40°C

OUTPUT CURRENT : I

Fig.4 Output voltage vs. output

current

O

(A)

O

(A)

VO=0.2V

lO/lI=20

V

I (off)

V

I (on)

V

O (on)

I

I

I

O (off)

G

I

f

T

R

1

R

2 / R1

10m

5m
2m

(A)

1m

500µ
200µ

100µ

50µ
20µ

10µ

OUTPUT CURRENT : Io

5µ
2µ

1µ

56

15.4

0.8

VCC=5V

Ta=100°C

25°C

−40°C

0 3.0

0.5 1.0 1.5 2.0 2.5
INPUT VOLTAGE : V

−

−

3

−

0.1

−

−

−

−

−

−−−

−

250

22

1

I(off)

Fig.2 Output current vs. input voltage

(OFF characteristics)

EMH1 / UMH1N / IMH1A

0.5

−

0.3

0.36

0.5

−

28.6

1.2

(V)

CC

=5V, IO=100µA

V

V

V

O

=0.2V, IO=5mA

V

I

O

=10mA, II=0.5mA

mA

V

I

=5V

µA

CC

=50V, VI=0V

V
VO=5V, IO=5mA

MHz

V

CE

=10V, IE= −5mA , f=100MHz

kΩ

−

1k

500

I

200
100

50

20
10

5

DC CURRENT GAIN : G

2
1

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

Fig.3 DC current gain vs. output

−

−

Ta=100°C

25°C

−40°C

OUTPUT CURRENT : I

current

∗

VO=5V

O

(A)

Rev.A 2/2