查询EMF6供应商
Transistors
Power management (dual transistors)
EMF6
2SA2018 and 2SK3019 are housed independently in a EMT6 package.
EMF6
!!!!Application
Power management circuit
!!!!Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
!!!!Structure
Silicon epitaxial planar transistor
!!!!Equivalent circuits
(1)(2)(3)
Tr2
(4) (5) (6)
Tr1
!!!!External dimensions (Units : mm)
(3)
ROHM : EMT6
Abbreviated symbol：F6
0.22
0.13
(4)
(6)
0.5
1.0
(2)(5)
(1)
1.2
1.6
1.6
0.5
0.5
Each lead has
same dimensions
!!!!Packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMF6
EMT6
F6
T2R
8000
1/5
Transistors
!!!!Absolute maximum ratings (Ta=25°C)
Tr1
Parameter Symbol
CBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
V
V
CEO
V
EBO
I
I
CP
P
Tj
Tstg
C
C
Limits
−15
−12
−6
−500
−1.0
150(TOTAL)
150
−55~+150
Tr2
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 PW≤10ms Duty cycle≤50%
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Symbol
DSS
V
V
GSS
I
D
DP
I
I
DR
I
DRP
P
Tch
Tstg
D
Limits
30
±20
100
200 mA
100 mA
200
150(TOTAL)
150
−55~+150
Unit
V
V
V
mA
A
mW
°C
°C
Unit
V
V
mA
mA
mW
°C
°C
∗1
∗2
∗1
∗1
∗2
EMF6
!!!!
Electrical characteristics
(Ta=25°C)
Tr1
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Tr2
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage
Static drain-source
on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
BV
BV
BV
I
I
V
CE(sat)
CBO
EBO
h
f
CEO
CBO
EBO
FE
T
−12
−15
−6
−−
−−
−−
−−
−−
−−100
270 − 680
260
−
Cob − 6.5 −
Symbol
GSS
I
(BR)DSS
V
DSS
I
V
GS(th)
DS(on)
R
|Y
fs
C
iss
C
oss
C
rss
t
d(on)
r
t
t
d(off)
f
t
Min. Typ. Max. Unit Conditions
−−
30
−−
−−
0.8
|
20
−
58Ω
−
713Ω
−
−−ms V
13
−
9
−
4
−
15
−
35
−
80
−
80
−
−100
−100
nA VCB=−15V
nA VEB=−6V
−250 mV
MHz
−
pF
±1 µA
1.0 µA
1.5
pF
−
− pF
− pF
− ns
ns
−
− ns
− ns
V
C
=−1mA
I
V
I
C
=−10µA
V
E
=−10µA
I
IC=−200mA, IB=−10mA
CE
− V
=−2V, IC=−10mA
VCE=−2V, IE=10mA, f=100MHz
V
CB
=−10V, IE=0mA, f=1MHz
VGS=±20V, VDS=0V
V
I
D
=10µA, VGS=0V
VDS=30V, VGS=0V
DS
VV
=3V, ID=100µA
ID=10mA, VGS=4V
D
=1mA, VGS=2.5V
I
DS
=3V, ID=10mA
V
DS
=5V, VGS=0V, f=1MHz
D
=10mA, VDD 5V,
I
GS
=5V, RL=500Ω,
V
GS
=10Ω
R
2/5
Transistors
!!!!Electrical characteristic curves
Tr1
1000
VCE=2V
Pulsed
(mA)
C
100
10
COLLECTOR CURRENT : I
1
0
Fig.1 Grounded emitter propagation
Ta=125°C
Ta=25°C
Ta= −40°C
BASE TO EMITTER VOLTAGE : V
characteristics
BE
1.41.0 1.20.4 0.6 0.80.2
(V)
1000
FE
100
10
DC CURRENT GAIN : h
1
1 10 100 1000
Ta=125°C
Ta=25°C
Ta=−40°C
COLLECTOR CURRENT : I
C
Fig.2 DC current gain vs.
collector current
(mA)
VCE=2V
Pulsed
EMF6
1000
Ta=25°C
(mV)
Pulsed
CE(sat)
100
IC/IB=50
IC/IB=20
IC/IB=10
10
1
1 10 100 1000
C
COLLECTOR CURRENT : I
COLLECTOR SATURATION VOLTAGE : V
(mA)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
1000
(V)
IC/IB=20
Pulsed
CE (sat)
Ta=25°C
Ta=125°C
Ta=−40°C
C
(mA)
100
10
1
1 10 100 1000
COLLECTOR CURRENT : I
COLLECTOR SATURATION VOLTAGE : V
Fig.4 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
1000
100
10
Cib
Cob
I
E
=
0A
f=1MHz
Ta=25°C
10000
(mV)
BE (sat)
1000
100
10
1 10 100 1000
BASER SATURATION VOLTAGE : V
Ta=25°C
COLLECTOR CURRENT : I
Ta=−40°C
Ta=125°C
Fig.5 Base-emitter saturation voltage
vs. collector current
IC/IB=20
Pulsed
C
(mA)
1000
VCE=2V
Ta=25°C
Pulsed
(MHz)
T
100
10
TRANSITION FREQUENCY : f
1
1 10 100 1000
EMITTER CURRENT : I
Fig.6 Gain bandwidth product
vs. emitter current
E
(mA)
1
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER TO BASE VOLTAGE : V
Fig.7 Collector output capacitance
1 10 1000.1
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
EB
V)
(
3/5
Transistors
Tr2
0.15
(A)
D
0.1
0.05
DRAIN CURRENT : I
4V
0
012345
DRAIN-SOURCE VOLTAGE : VDS (V)
3V
3.5V
2.5V
2V
VGS=1.5V
Fig.9 Typical output characteristics
Ta=25°C
Pulsed
200m
V
DS
=3V
100m
Pulsed
50m
(A)
D
20m
10m
5m
2m
1m
0.5m
DRAIN CURRENT : I
0.2m
0.1m
04
1
GATE-SOURCE VOLTAGE : VGS (V)
Ta=125°C
75°C
25°C
−25°C
2
Fig.10 Typical transfer characteristics
EMF6
2
(V)
GS(th)
1.5
1
0.5
GATE THRESHOLD VOLTAGE : V
0
−25 25 50 75 100 125 150
3
−50 0
CHANNEL TEMPERATURE : Tch (°C)
Fig.11 Gate threshold voltage vs.
channel temperature
VDS
I
D
=0.1mA
Pulsed
=3V
50
(Ω)
DS(on)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
Ta=125°C
20
10
0.5
0.001
5
2
1
75°C
25°C
−25°C
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
V
Pulsed
Fig.12 Static drain-source on-state
resistance vs. drain current ( Ι )
9
8
(Ω)
7
DS(on)
6
5
4
3
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
−50 0 25 150
ID=100mA
ID=50mA
−25 50 75 100 125
CHANNEL TEMPERATURE : Tch (°C)
GS
=4V
VGS=4V
Pulsed
50
Ta=125°C
(Ω)
20
DS(on)
10
5
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.5
0.001
75°C
25°C
−25°C
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
V
Pulsed
Fig.13 Static drain-source on-state
resistance vs. drain current ( ΙΙ )
0.5
0.2
Ta=−25°C
0.1
0.05
0.02
0.01
0.005
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
0.002
0.001
25°C
75°C
125°C
0.0001
0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05
DRAIN CURRENT : ID (A)
GS
=2.5V
V
DS
=3V
Pulsed
0.1 0.2 0.5
15
(Ω)
DS(on)
10
5
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
0 5 10 15 20
GATE-SOURCE VOLTAGE : VGS (V)
ID=0.1A
ID=0.05A
Fig.14 Static drain-source on-state
resistance vs. gate-source
voltage
200m
(A)
100m
DR
50m
20m
10m
5m
2m
1m
0.5m
REVERSE DRAIN CURRENT : I
0.2m
0.1m
SOURCE-DRAIN VOLTAGE : VSD (V)
Ta=125°C
75°C
25°C
−25°C
Ta=25°C
Pulsed
V
GS
=0V
Pulsed
1.510.50
Fig.15 Static drain-source on-state
resistance vs. channel temperature
Fig.16 Forward transfer admittance vs.
drain current
Fig.17 Reverse drain current vs.
source-drain voltage ( Ι )
4/5
Transistors
EMF6
200m
(A)
100m
DR
50m
20m
10m
V
GS
=4V
5m
2m
1m
0.5m
REVERSE DRAIN CURRENT : I
0.2m
0.1m
SOURCE-DRAIN VOLTAGE : VSD (V)
0V
Fig.18 Reverse drain current vs.
source-drain voltage ( ΙΙ )
Ta=25°C
Pulsed
CAPACITANCE : C (pF)
1.510.50
50
20
10
5
2
1
0.5
0.1
0.2 0.5 1 2 5 10 20 50
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.19 Typical capacitance vs.
drain-source voltage
Ta=25°C
f=1MH
VGS=0V
C
iss
C
oss
C
rss
Z
SWITHING TIME : t (ns)
1000
500
200
100
50
20
10
5
2
0.1
t
f
t
d(off)
t
r
t
d(on)
0.2 0.5 1 2 5 10 20 50
DRAIN CURRENT : ID (mA)
Fig.20 Switching characteristics
Ta=25°C
DD
=5V
V
GS
=5V
V
G
=10Ω
R
Pulsed
100
5/5
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