ROHM EMF6 Technical data

查询EMF6供应商

Transistors

Power management (dual transistors)

EMF6

2SA2018 and 2SK3019 are housed independently in a EMT6 package.

EMF6

!!!!Application

Power management circuit

!!!!Features

1) Power switching circuit in a single package.

2) Mounting cost and area can be cut in half.

!!!!Structure

Silicon epitaxial planar transistor

!!!!Equivalent circuits

(1)(2)(3)

Tr2

(4) (5) (6)

Tr1

!!!!External dimensions (Units : mm)

(3)

ROHM : EMT6

Abbreviated symbol：F6

0.22

0.13

(4)

(6)

0.5

1.0

(2)(5)
(1)

1.2

1.6

1.6

0.5

0.5

Each lead has
same dimensions

!!!!Packaging specifications

Type

Package

Marking

Code

Basic ordering unit (pieces)

EMF6
EMT6

F6

T2R

8000

1/5

Transistors

!!!!Absolute maximum ratings (Ta=25°C)
Tr1

Parameter Symbol

CBO

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current
Power dissipation

Junction temperature
Range of storage temperature

∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C

C

Limits

−15

−12

−6

−500

−1.0

150(TOTAL)

150

−55~+150

Tr2

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Reverse drain

current

Continuous

Pulsed

Continuous

Pulsed

Total power dissipation
Channel temperature
Range of storage temperature

∗1 PW≤10ms Duty cycle≤50%
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

Symbol

DSS

V
V

GSS

I

D

DP

I
I

DR

I

DRP

P

Tch

Tstg

D

Limits

30
±20
100
200 mA
100 mA
200

150(TOTAL)

150

−55~+150

Unit

V
V
V

mA

A

mW

°C
°C

Unit

V
V

mA

mA

mW

°C
°C

∗1
∗2

∗1

∗1
∗2

EMF6

!!!!

Electrical characteristics

(Ta=25°C)

Tr1

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

Tr2

Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage

Static drain-source
on-state resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time

BV
BV
BV

I
I

V

CE(sat)

CBO
EBO

h

f

CEO
CBO
EBO

FE
T

−12

−15

−6

−−

−−

−−

−−

−−

−−100

270 − 680

260

−

Cob − 6.5 −

Symbol

GSS

I

(BR)DSS

V

DSS

I

V

GS(th)

DS(on)

R

|Y

fs

C

iss

C

oss

C

rss

t

d(on)

r

t

t

d(off)

f

t

Min. Typ. Max. Unit Conditions

−−

30

−−

−−

0.8

|

20

−

58Ω

−

713Ω

−

−−ms V

13

−

9

−

4

−

15

−

35

−

80

−

80

−

−100

−100

nA VCB=−15V
nA VEB=−6V

−250 mV

MHz

−

pF

±1 µA

1.0 µA

1.5

pF

−

− pF

− pF

− ns

ns

−

− ns

− ns

V

C

=−1mA

I

V

I

C

=−10µA

V

E

=−10µA

I

IC=−200mA, IB=−10mA

CE

− V

=−2V, IC=−10mA

VCE=−2V, IE=10mA, f=100MHz
V

CB

=−10V, IE=0mA, f=1MHz

VGS=±20V, VDS=0V

V

I

D

=10µA, VGS=0V

VDS=30V, VGS=0V

DS

VV

=3V, ID=100µA

ID=10mA, VGS=4V

D

=1mA, VGS=2.5V

I

DS

=3V, ID=10mA

V

DS

=5V, VGS=0V, f=1MHz

D

=10mA, VDD 5V,

I

GS

=5V, RL=500Ω,

V

GS

=10Ω

R

2/5