ROHM DTC363EK, DTC363ES, DTC363EU Schematic [ru]

DTC363EU / DTC363EK / DTC363ES
Transistors

Digital transistors (built-in resistors)

DTC363EU / DTC363EK / DTC363ES

zFeatures
1) Low V
O (on) makes these transistors
optimal for muting circuits.
V
O (on) =40mV (typ.)
(I
O / Il =50mA / 2.5mA)
2) They can be used at high current
C=600mA).
(I
zStructure
NPN digital transistor (Built-in resistor type)
zEquivalent circuit
R1
IN
R2
IN
OUT
GND
OUT
GND
zExternal dimensions (Unit : mm)
DTC363EU
ROHM : UMT3 EIAJ : SC-70
DTC363EK
ROHM : SMT3 EIAJ : SC-59
DTC363ES
ROHM : SPT EIAJ : SC-72
+
2.0 0.2
− +
1.3 0.1
0.65 0.65 (2)(1)
+
(3)
All terminals have same dimensions
2.9 0.2
1.9 0.2
0.95
(1)
All terminals have same dimensions
+
3 0.2(15Min.)
5
1.25 0.1
+0.1
0.3
0
Addreviated symbol : H27
+
− +
0.95
(2)
(3)
+0.1
0.4
0.05
Addreviated symbol : H27
+
4 0.2 2 0.2
0.45
2.5
(1)
(2) (3)
+0.2
1.6
+0.4
0.1
+
2.1 0.1
0.1
3Min.
+0.15
0.05
+
2.8 0.2
0.9 0.1
0.7 0.1
0.2
+
0.15 0.05
1.1
+0.1
0.15
0.06
0.5
+
+
+0.2
0.1
0.8 0.1
+
0.45
0 to 0.1
+
+0.15
0.05
0.1 to 0.4
0 to 0.1
0.3 to 0.6
(1) GND (2) IN (3) OUT
(1) GND (2) IN (3) OUT
(1) GND (2) OUT (3) IN
Rev.A 1/3
Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
V
Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature
CC
V
C
I
Pd
Tj
Tstg
IN
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I(off)
Input voltage
Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency Output "ON" resistance
Transition frequency of the device
V V
I(on)
V
O(on)
I
I
O(off)
G R
R2/R
f
R
I
I
1
1
T
on
zPackaging specifications
SMT3UMT3 SPT
Part No.
DTC363EU DTC363EK DTC363ES
Package Packaging type Taping Taping Taping Code
Basic ordering unit (pieces)
T106
3000
zR
on measurement circuit
DTC363EU / DTC363EK / DTC363ES
Limits(DTC363E )
UKS
20
10 to +10 600
200 300
150
55 to +150
Typ. Max. Unit Conditions
Min.
40
6.8 1
200
1.0
TP
0.5
80
1.3
0.5
8.84
1.2
IN
v
i
4.76
T146
3000
2
70
0.8
5000
Unit
V V
mA
mW
C C
CC
=5V, IO=100µA
V
V
O
=0.3V, IO=10mA
V
mV
O/II
=50mA/2.5mA
I
mA
µA
k
I
=5V
V
CC
=15V, VI=0V
V
O
=5V, IO=50mA
V
−−
MHz
V
CE
=
10V, I
E
= −
50mA, f=100MHz
VI=7V, RL=1kΩ, f=1kHz
R
L
OUT
v
V
i
V
0
R
on
= R
ViV
0
0
GND
+
L
Fig.1 Input "ON" resistance (Ron)
measurement circuit
Rev.A 2/3
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