
DTC144WE / DTC144WUA / DTC144WKA / DTC144WSA
Transistors
100mA / 50V Digit al transistors
(with built-in resistors)
DTC144WE / DTC144WUA / DTC144WKA / DTC144WSA
zApplications zExternal dimensions (Unit : mm)
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input,
and parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
4) Higher mounting densities can be achieved.
zStructure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
zPackaging specifications
Part No.
DTC144WE
DTC144WUA
DTC144WKA
DTC144WSA
Package
Packaging type
Code
Basic ordering unit (pieces)
EMT3
Taping
TL
3000
−
−
−
UMT3
Taping
T106
3000
SMT3
Taping
T146
3000
SPT
Taping
TP
5000
−−−−
−−
−−
zEquivalent circuit
R
1
IN
R
2
IN
R1=47kΩ, R2=22kΩ
GND
OUT
GND
OUT
−
EMT3
(SC-75A)
<SOT-416>
(1) GND
(2) IN
(3) OUT
UMT3
<SC-70>
(1) GND
(2) IN
(3) OUT
SMT3
<SC-59>
(1) GND
(2) IN
(3) OUT
SPT
(SC-72)
(1) GND
(2) OUT
(3) IN
1.6
0.3
(3)
(2)
0.2
(1)
0.2
0.5
0.5
1.0
Abbreviated symbol : 86
2.0
0.3
(3)
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : 86
2.9
0.4
(3)
(2)
0.95 0.95
1.9
Abbreviated symbol : 86
4.0 2.0
3.0
(15Min.)
5.0
(1) (2) (3)
Abbreviated symbol : C144WS
0.7
0.55
1.6
0.8
0.15
Each lead has same dimensions
0.2
2.1
1.25
0.15
Each lead has same dimensions
1.6
2.8
(1)
Each lead has same dimensions
3Min.
0.45
2.5
0.5
0.9
0.7
0.15
0.1Min.
0.1Min.
1.1
0.8
0.3Min.
0.45
Rev.B
1/3

DTC144WE / DTC144WUA / DTC144WKA / DTC144WSA
Transistors
zAbsolute maximum ratings (Ta=25°C)
Supply voltage
Input voltage
Output current
Power
dissipation
Junction temperature
Storage temperature
zExternal characteristics (Unit: mm)
Input voltage
Output voltage
Input current
Output current
DC current
Input resistance
Resistance ratio
Transition frequency
Characteristics of built-in transistor
∗
Parameter Symbol
DTC144WE
DTC144WUA / DTC144WKA
DTC144WSA
Parameter Symbol Min. Typ. Max. Unit Conditions
gain
V
V
V
I
R
I(off)
I(on)
O(on)
I
O(off)
G
R
2/R1
f
T
Unit
V
V
mA
V
V
I
I
C(Max.)
Limits
CC
I
O
50
−10 to +40
30
100
150
P
D
200
mW
300
Tj
Tstg
−
4 −−
−
I
−
−
I
1
56
32.9
150
−55 to +150
0.8
−
0.3
0.1
0.16
−
0.5
−
−
47
61.1
°C
°C
V
CC
=
5V, I
O
=
V
O
=
V
V
O
=
10mA, I
I
mA
I
=
5V
V
µA
CC
V
−
−
O
=
5mA, V
I
kΩ
0.3V, I
=
50V, V
100µA
O
=
2mA
I
=
0.5mA
I
=
O
=
5V
0V
−
0.37 0.47 0.57 −−
∗
250
−
−
MHz
V
CE
=
10V, I
E
=
−5mA, f=100MHz
Rev.B
2/3

DTC144WE / DTC144WUA / DTC144WKA / DTC144WSA
Transistors
zElectrical characteristics curves
100
V
O
=0.3V
50
) (V)
20
on
(
I
10
Ta= −40°C
5
2
1
500m
INPUT VOLTAGE : V
200m
100m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
Fig.1 Input voltage vs. Output current
(ON characteristics)
IO/I
I
=20/1
500m
200m
) (V)
on
(
100m
O
50m
20m
10m
5m
OUTPUT VOLTAGE : V
2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
Fig.4 Output voltage vs. Output current
Ta=25°C
Ta=100°C
OUTPUT CURRENT : I
Ta=100°C
Ta=25°C
OUTPUT CURRENT : I
O
(A)
Ta= −40°C
O
(A)
10m
V
CC
=5V
5m
2m
O (A)
1m
500µ
200µ
100µ
50µ
20µ
10µ
OUTPUT CURRENT : I
5µ
2µ
1µ
Ta=100°C
Ta=25°C
0 500m 1 1.5 2 2.5 3
INPUT VOLTAGE : VI(
Fig.2 Output current vs. Input voltage
(OFF characteristics)
Ta= −40°C
off
) (V)
1k
V
O
=5V
500
I
200
100
50
20
10
5
DC CURRENT GAIN : G
2
1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : I
Ta=25°C
Ta=100°C
Ta= −40°C
O
(A)
Fig.3 DC current gain vs. Output current
Rev.B
3/3

Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1