ROHM DTC143TUB Technical data
Datasheet
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© 2012 ROHM Co., Ltd. All rights reserved.
DTC143T series
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
l
Outline
l
Features
1) Built-In Biasing Resistors
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Complementary PNP Types :DTA143T series
6) Complex transistors :EMH3 /UMH3N /IMH3A
l
Inner circuit
/EMG3 /UMG3N /FMG3A （PNP type）
7) Lead Free/RoHS Compliant.
l
Application
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
l
Packaging specifications
R
1
4.7kW
Parameter
Value
V
CEO
50V
I
C
100mA
Part No.
Package
Package
size
(mm)
Taping
code
3,000038
Tape width
(mm)
Basic
ordering
unit (pcs)
Marking
DTC143TM
VMT3
1212
T2L
180
8
8,000
Reel size
(mm)
03
DTC143TEB
EMT3F
1616
TL
180
3,000
03
DTC143TKA
SMT3
2928
T146
180
8
3,000
03
DTC143TUA
UMT3
2021
T106
180
8
VMT3
EMT3F
EMT3
UMT3F
UMT3
SMT3
8
3,000
03
DTC143TUB
UMT3F
2021
TL
180
8
3,000
03
DTC143TE
EMT3
1616
TL
180
DTC143TM
(SC-105AA)
DTC143TE
SOT-416 (SC-75A)
Collector
Base
Emitter
Collector
Base
Emitter
DTC143TKA
SOT-346 (SC-59)
DTC143TUA
SOT-323 (SC-70)
Collector
Base
Emitter
Collector
Base
Emitter
Collector
Base
Emitter
Collector
Base
Emitter
DTC143TUB
(SC-85)
DTC143TEB
(SC-89)
1/9
2012.04 - Rev.A
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
DTC143T series
lAbsolute maximum ratings (Ta = 25C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Range of storage temperature
lElectrical characteristics(Ta = 25C)
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
Parameter
Symbol
Values
Unit
V
CBO
50
V
V
CEO
50
V
V
EBO
5
V
I
C
100
mA
DTC143TM
DTC143TEB
DTC143TE
P
C
*2
150
mW
DTC143TUB
DTC143TUA
DTC143TKA
200
mW
T
j
150
C
T
stg
-55 to +150
C
Unit
Min.
Typ.
Max.
Parameter
Symbol
Conditions
V
Collector-emitter breakdown voltage
BV
CEO
IC= 1mA
V50-50---
Collector-base breakdown voltage
BV
CBO
IC= 50μA
V--
0.5mA5--mA--0.15V--0.5-3.5
4.7
5.9kW100
250
600
MHz
-
250
-
Transition frequency
fT
*1
V
CE
= 10V, IE = -5mA,
f = 100MHz
IE= 50μA
Collector cut-off current
I
CBO
V
CB
= 50V
Emitter cut-off current
I
EBO
V
EB
= 4V
Emitter-base breakdown voltage
BV
EBO
IC / IB= 5mA / 0.25mA
DC current gain
h
FE
VCE= 5V , IC= 1mA ,
Input resistance
R
1
-
Collector-emitter saturation voltage
V
CE(sat)
2/9
2012.04 - Rev.A
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
DTC143T series
lElectrical characteristic curves(Ta = 25°C)
Fig.1 Grounded emitter propagation
characteristics
COLLECTOR CURRENT : Ic (mA)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Grounded emitter output
characteristics
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER
VOLTAGE : VCE (V)
Fig.3 DC Current gain
vs. Collector Current
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. Collector Current
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat) (V)
COLLECTOR CURRENT : IC (mA)
0
20
40
60
80
100
0 5 10
250μA
0A
300μA
350μA
400μA
450μA
500μA
200μA
150μA
100μA
IB=
Ta=25ºC
50μA
0.001
0.01
0.1
1
10
0 0.5 1 1.5 2
VCE=5V
Ta=100ºC
25
ºC
-40ºC
3/9
2012.04 - Rev.A
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