ROHM DTA123YE, DTA123YKA, DTA123YSA, DTA123YUA Schematic [ru]

DTA123YE / DTA123YUA

Transistors DTA123YKA / DTA123YSA

-100mA / -50V Digital transistors (with built-in resistors)

DTA123YE / DTA123YUA /
DTA123YKA / DTA123YSA

zApplica tions
Inverter, Interface, Driver

zFeatures

1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive bia sing o f the inpu t.
They also have the advantage of almost completely
eliminating parasitic effects.

3) Only the on/off conditions need to be set for operation,
making the device design easy .

zStructure

PNP epitaxial planar silicon transistor
(Resistor built-in type)

zPackaging specifications

UMT3EMT3 SMT3 SPT

T106

3000

−

−

T146

3000

−

−

TL

3000

−

−

−−−

TapingTapingTapingTaping

TP

5000

−

−

−

Part No.
DTA123YE
DTA123YUA
DTA123YKA
DTA123YSA

Package
Package type
Code

Basic ordering
unit (pieces)

zEquivalent circuit

R

1

IN

R

2

IN

OUT

GND(+)

OUT

GND(+)

zExternal dimensions (Unit : mm)

DTA123YE

1.6

0.3

(3)

0.8

(2)

(1)

0.2

0.2

0.5

0.5

ROHM : EMT3

DTA123YUA

ROHM : UMT3
EIAJ : SC-70

DTA123YKA

ROHM : SMT3
EIAJ : SC-59

1.0

Abbreviated symbol : 52

2.0

0.3

(3)

1.25

(1)

(2)

0.65

0.65

1.3

Abbreviated symbol : 52

2.9

0.4

(3)

(2)

0.95 0.95

1.9

Abbreviated symbol : 52

DTA123YSA

ROHM : SPT
EIAJ : SC-72

4.0 2.0

3.0

(15Min.)

5.0

(1) (2) (3)

Abbreviated symbol : A123YS

0.7

0.55

1.6

0.15

0.1Min.

0.9

0.7

0.2

2.1

0.15

Each lead has same dimensions

1.1

0.8

1.6

2.8

(1)

0.15

3Min.

0.45

2.5

0.5

(1) GND
(2) IN
(3) OUT

(1) GND

0.1Min.

(2) IN
(3) OUT

(1) GND

0.3Min.

(2) IN

0.45

(3) OUT

(1) GND
(2) OUT
(3) IN

Each lead has same dimensions

R1=2.2kΩ R2=10kΩ

Rev.A 1/2

DTA123YE / DTA123YUA

Transistors DTA123YKA / DTA123YSA

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Supply voltage
Input voltage

Output current

Power dissipation
Junction temperature
Storage temperature

DTA123YE

V

CC −50

VIN

IO

IC(Max.)

P

150 200 300

D

Tj

Tstg

zElectrical characteristics (Ta=25°C)

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency

∗

Characteristics of built-in transistor

V
V

V

O(on)

I

O(off)

G
R

R2/R

I(off)

I(on)

I

f

Min.

−

−3

−

−

I

−

33

I

1.54

1

3.6

1

−

T

∗

zElectrical characteristic curves

−

100

−

50

−

20

(V)

−

10

I(on)

Ta=−40°C

−5

−2

−1

−

500m

INPUT VOLTAGE : V

−

200m

−

100m

−100µ−1m −10m −100m

25°C

100

°C

OUTPUT CURRENT : I

VO=−

O

(A)

Fig.1 Input voltage vs. output current

(ON characteristics)

0.3

V

Limits

DTA123YUA DTA123YKA DTA123YSA

−12 to +5

−100

−100

150

−55 to +150

Typ. Max. Unit Conditions

−0.3

−

−

−

−0.3

−0.1

−3.8

−

−0.5

−

−

−

2.86

2.2

5.5

4.5

−

250

−

10m

−

5m

−

2m

(A)

−

1m

−500µ

−200µ

−100µ

−50µ

−20µ

−10µ

OUTPUT CURRENT : IO

−5µ

−2µ

−1µ

0

−

0.5−1.0−1.5−2.0−2.5
INPUT VOLTAGE : VI(off)

Fig.2 Output current vs. input voltage

(OFF characteristics)

Unit

V
V

mA

mW

°C
°C

V

CC

=

−5V, I

O

=

V

V

O

=

I

O/II

V

V

mA

I

=

−5V

µA

V

CC

V

O

=

−

kΩ

−−

V

CE

Ta=

100

25°C

−40°C

=

°C

MHz

−100µA

−0.3V, I

O

=

−20mA

=

−10mA/−0.5mA

=

−50V, V

I

=

0V

−5V, I

O

=

−10mA

−

−

10V, IE=5mA, f=100MHz

VCC=−5V

(V)

−

3.0

1k

500

I

200
100

50

20
10

DC CURRENT GAIN : G

5

2
1

−100µ−1m −10m −100m

Fig.3 DC current gain vs. output

Ta=

100

°C

25°C

−40°C

OUTPUT CURRENT : I

current

O

(A)

VO=−5V

−1

−500m

(V)

−200m

O(on)

−100m

−50m

−20m

−10m

−5m

OUTPUT VOLTAGE : V

−2m

−1m

−100µ−1m −10m −100m

OUTPUT CURRENT : I

Ta=

100

25°C

−40°C

IO/II=20

°C

O

(A)

Fig.4 Output voltage vs. output

current

Rev.A 2/2