ROHM DTA123JUB Schematic [ru]

Transistors ! !!!!!! !!DTA123JUB

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-100mA / -50V Digital transistors
(with built-in resistors)

DTA123JUB

Applications

Inverter, Interface, Driver

Dimensions (Unit : mm)

UMT3F

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Features

1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for
operation, making the device design easy.

Structure

PNP silicon epitaxial planar transistor type
(Resistor built-in)

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Packaging specifications

UMT3F

TL

3000

Part No.

DTA123JUB

Package

Packaging type Taping

Code

Basic ordering unit (pieces)

(1) IN
(2) GND
(3) OUT

Equivalent circuit

IN

IN

2.0

0.32

(3)

0.4250.425

2.1

1.25

(1) (2)

0.65 0.65

1.3

Abbreviated symbol : 132

R

1

R

2

0.9

0.530.53

0.13

Each lead has same dimensions

OUT

GND(+)

OUT

GND(+)

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Absolute maximum ratings (Ta=25qC)

Parameter Symbol

Supply voltage

Input voltage

Collector current

Output current

Power dissipation

Junction temperature

Range of storage temperature

Characteristics of built-in transistor

∗1
∗2

Each terminal mounted on a recommended land

V

V

I

C(max.)

I

P

Tj

Tstg

CC

IN

O

R1=2.2kΩ, R2=47kΩ

UnitLimits

−50

∗1

∗2

D

−12 to +5

−100

−100

200

150

−55 to +150

V

V

mA

mA

mW

°C

°C

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Transistors ! !!!!!! !!DTA123JUB

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Electrical characteristics (Ta=25qC)

Parameter Symbol

V

Input voltage

Output voltage

Input current

Output current

DC current gain

Transition frequency

Input resistance

Resistance ratio

∗ Characteristics of built-in transistor

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Electrical characteristic curves

−100

−50

−20

(V)

I(on)

−10

−5

Ta=−40°C

100°C

−

500μ

100μ

−

200μ

OUTPUT CURRENT : I

25°C

−

1m

−

2m

−

−2

−1

−500m

INPUT VOLTAGE : V

−200m

−100m

−

I(off)

V

I(on)

V

O(on)

I

I

I

O(off)

G

I

f

T

R

1

R2/R

1

VO=−0.3V

−

20m

5m

−

10m

−

50m

O

(A)

Fig.1 Input voltage vs. output current

(ON characteristics)

−1

−500m

−200m

(V)

O(on)

−100m

−50m

−20m

−10m

−5m

OUTPUT VOLTAGE : V

−2m

−1m

−100μ

−1m

−200μ

OUTPUT CURRENT : I

Ta=100°C

−2m −20m−500μ−5m −50m

25°C

−40°C

−10m

lO/lI=20

O

(A)

Fig.4 Output voltage vs. output current

−

−100m

Typ. Max. Unit Conditions

Min.

−

−1.1

−

−

−

80

−

1.54

17

−10m

−5m

−2m

(A)

−1m

−500μ

−200μ

−100μ

−50μ

−20μ

−10μ

OUTPUT CURRENT : Io

100m

−0.5

−

−

−

−300

−100

−3.6

−

−500

−

−

−

−

250

2.2

21

−5μ

−2μ

−1μ

0

−

MHz

2.86

26

Ta=100°C

−40°C

0.5−1.0−1.5−2.0−2.5

INPUT VOLTAGE : V

V

V

V

mV

I

V

mA

nA

V

−

V

V

kΩ

−−

25°C

Fig.2 Output current vs. input voltage

(OFF characteristics)

CC

=−5V, IO=−100μA

O

=−0.3V, IO=−5mA

O

=−5mA, II=−0.25mA

I

=−5V

CC

=−50V, VI=0V

O

=−5V, IO=−10mA

CE

=−10V, IE=5mA, f=100MHz∗

−

VCC=−5V

−

3.0

I(off)

(V)

1k

500

I

200

100

50

20

10

5

DC CURRENT GAIN : G

2

1

−100μ−1m −10m −100m

Ta=100°C

25°C

−40°

C

−200μ−2m −20m−500μ−5m −50m

OUTPUT CURRENT : I

VO=−

O

(A)

Fig.3 DC current gain vs. output

current

5V

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