ROHM DTA044EUB Technical data

DTA044E series

PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet

•Outline

Parameter

Value

VCC	−50V
IC(MAX.)	−100mA
R1	47kΩ
R2	47kΩ

•Features

1)Built-In Biasing Resistors, R1 = R2 = 47kΩ.

2)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit).

3)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of

completely eliminating parasitic effects.

4)Only the on/off conditions need to be set for operation, making the circuit design easy.

5)Complementary NPN Types :DTC044E series

6)Lead Free/RoHS Compliant.

•Application

Switching circuit, Inverter circuit, Interface circuit, Driver circuit

•Packaging specifications

VMT3	EMT3F
OUT	OUT
IN	IN
GND	GND
DTA044EM	DTA044EEB
(SC-105AA)	(SC-89)
UMT3F
OUT
IN
GND
DTA044EUB
(SC-85)

•Inner circuit

			Package	Taping	Reel size	Tape width	Basic
	Part No.	Package	size				ordering	Marking
				code	(mm)	(mm)
			(mm)				unit (pcs)
	DTA044EM	VMT3	1212	T2L	180	8	8,000	31
	DTA044EEB	EMT3F	1616	TL	180	8	3,000	31
	DTA044EUB	UMT3F	2021	TL	180	8	3,000	31

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© 2012 ROHM Co., Ltd. All rights reserved.	1/7	2012.05 - Rev.B

DTA044E series

Data Sheet

•Absolute maximum ratings (Ta = 25°C)

Parameter

Symbol

Values

Unit

Supply voltage

VCC

−50

V

Input voltage

VIN

−40 to +10

V

Output current

IO

−30

mA

Collector current

*1

−100

mA

IC(MAX.)

Power dissipation

DTA044EM

150

mW

DTA044EEB

*2

PD

DTA044EUB

200

mW

Junction temperature

Tj

150

°C

Range of storage temperature

Tstg

−55 to +150

°C

•Electrical characteristics(Ta = 25°C)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Input voltage

VI(off)

VCC = −5V, IO = −0.1mA

-

-

−0.8

V

VI(on)

VO = −0.3V, IO = −2mA

−3.0

-

-

Output voltage

VO(on)

IO / II = −5mA / −0.5mA

-

−0.07

−0.15

V

Input current

II

VI = −5V

-

-

−0.18

mA

Output current

IO(off)

VCC = −50V, VI = 0V

-

-

−0.5

μA

DC current gain

GI

VO = −10V, IO = −5mA

80

-

-

-

Input resistance

R1

-

32.9

47

61.1

kΩ

Resistance ratio

R2/R1

-

0.8

1

1.2

-

Transition frequency

fT

*1

VCE = −10V, IE = 5mA,

-

250

-

MHz

f = 100MHz

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference footprint

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© 2012 ROHM Co., Ltd. All rights reserved.	2/7	2012.05 - Rev.B

DTA044E series

Data Sheet

•Electrical characteristic curves(Ta = 25°C)

Fig.1 Input voltage vs. output current	Fig.2 Output current vs. input voltage
(ON characteristics)	(OFF characteristics)

	-100				-10
		VO= −0.3V		[mA]
[V]		Ta= −40ºC			-1
I(on)				O
	-10			: I
		Ta=25ºC
INPUT VOLTAGE : V				OUTPUT CURRENT
		Ta=75ºC
		Ta=125ºC			-0.1
	-1
					-0.01
	-0.1				-0.001
	-0.1	-1	-10	-100
		OUTPUT CURRENT : IO [mA]

	VCC= −5.0V
				Ta=125ºC
				Ta=75ºC
				Ta=25ºC
				Ta= −40ºC
0	-0.5	-1	-1.5	-2	-2.5	-3

INPUT VOLTAGE : VI(off)[V]

OUTPUT CURRENT : IO [mA]

Fig.3 Output current vs. output voltage

Fig.4 DC current gain vs. output current

-30		II= −200μA		1000
		−180μA
					Ta=125ºC		VO= −10V
		−160μA
					Ta=75ºC
		−140μA	I		Ta=25ºC
			G	Ta= −40ºC
-20		−120μA	:
				100
		−100μA	GAIN
		−80μA	CURRENTDC
-10		−60μA		10
		−40μA
		Ta=25ºC
0		0A		1
0	-5	-10		-0.1	-1	-10	-100
	OUTPUT VOLTAGE : VO [V]				OUTPUT CURRENT : IO [mA]

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© 2012 ROHM Co., Ltd. All rights reserved.	3/7	2012.05 - Rev.B