Datasheet DT455N Datasheet (DIODS)

Features

High Cell Density DMOS Technology

·

Low On-State Resistance

·

High Power and Current Capability

·

Fast Switching Speed

·

High Transient Tolerance

·

Mechanical Data

· SOT-223 Plastic Case

· Terminal Connections: See Outline Drawing

and Internal Circuit Diagram Above

C D

J

DT455N

N-CHANNEL ENHANCEMENT MODE

FIELD EFFECT TRANSISTOR

SOT-223

Dim Min Max

A

B

D

D

G

K

S

E

G

H

L

M

P

N

S

A 6.30 6.71

B 2.90 3.10

C 6.71 7.29

D 3.30 3.71

E 2.22 2.35

G 0.92 1.00

H 1.10 1.30

J 1.55 1.80

R

K 0.025 0.102

L 0.66 0.79

M 4.55 4.70

N — 10°

P 10° 16°

R 0.254 0.356

S 10° 16°

All Dimensions in mm

Maximum Ratings

Drain-Source Voltage

Gate-Source Voltage

Drain Current Note 1a Continuous

Maximum Power Dissipation Note 1a

Operating and Storage Temperature Range

25°C unless otherwise specified

Characteristic Symbol Value Unit

Pulsed

Note 1b
Note 1c

Thermal Characteristics

Characteristic Symbol Value Unit

Thermal Resistance, Junction-to-Ambient Note 1

Thermal Resistance, Junction-to-Case

Notes: 1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as

QJA

the solder mounting surface of the drain pins. R

1a. With 1 in
1b. With 0.0066 in2oz 2 oz. copper mounting pad R
1c. With 0.0123 in2oz 2 oz. copper mounting pad R

2

oz 2 oz. copper mounting pad R

V

DSS

V

GSS

I

D

P

d

T

j,TSTG

R

QJA

R

QJC

is guaranteed by design while R

QJC

QJA = 42°C/W.

QJA = 95°C/W.

QJA = 110°C/W.

30 V

20 V

±11.5

±40

3.0

1.3

1.1

-65 to +150 °C

42 °C/W

12 °C/W

is determined by the user’s board design.

QCA

A

W

DS11609 Rev. C-4 1 of 4 DT455N

Electrical Characteristics

25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Conditions

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

T

Gate-Body Leakage, Forward

Gate-Body Leakage, Reverse

j =55°C

BV

DSS

30 — — V

IDSS — —

I

GSSF

I

GSSR

— — 100 nA

— — -100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Static Drain-Source On-Resistance

T

= 125°C

j

T

= 125°C

j

On-State Drain Current

Forward Transconductance

V

GS(th)

R

DS (ON)

I

D(ON)

g

FS

1.0

0.7

—

30
15

—26— m

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C

ISS

C

OSS

C

RSS

— 1220 — pF

— 715 — pF

— 280 — pF

SWITCHING CHARACTERISTICS (Note 2)

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

t

D(ON)

t

r

t

D(OFF)

t

f

Q

Q

gs

Q

gd

—1120ns

—1630ns

—4880ns

—4070ns

g

—4661nC

— 4.0 — nC

—11—nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Max Continuous Drain-Source Diode
Forward Current

Drain-Source Diode Forward Voltage

Reverse Recovery Time

I

S

V

SD

t

rr

— — 2.5 A

— 0.845 1.2 V

— — 140 ns

1.5

0.9

0.013

0.019

0.018

1.0
10

3.0

2.2

0.015

0.03

0.02

µA

V

W

—— A

= 0V, ID= 250µA

V

GS

= 24V, VGS=0V

V

DS

= 20V, VDS=0V

V

GS

= -20V, VDS=0V

V

GS

= 10V, R

= 250µA

= 6.0W

GEN

V

DS=VGS,ID

= 10V, ID= 11.5A

V

GS

V

= 10V, ID= 11.5A

GS

VGS = 4.5V, ID = 10A

VGS = 10V, VDS = 5.0V
VGS = 4.5V, VDS = 5.0V

= 10V, ID= 11.5A

V

DS

V

= 15V, VGS=0V

DS

f = 1.0MHz

= 15V, ID= 1.0A

V

DD

V

GEN

= 10V. ID= 11.5A.

V

DS

V

= 10V

GS

= 0V, IS= 2.5A (Note 2)

V

GS

= 0V, IF= 2.5A

V

GS

dl

/dt = 100 A/µs

p

Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.

DS11609 Rev. C-4 2 of 4 DT455N

g

4

0

0

O

O

O

t

32

24

16

V = 10V

GS

6.0

5.0

4.5

4.0

3.5

3.0

2.5

ANCE

2.0

N-RESIST

URCE

1.5

V = 3.5V

GS

4.0

4.5

5.0

6.0

D

I , DRAIN-SOURCE CURRENT (A)

ANCE

1.25

0.75

8

0

0 0.5 1.0 1.5 2.0 2.5 3.0

V , DRAIN-SOURCE VOLTAGE (V)

DS

. 1, On-Region Characteristics

Fi

1.5

I = 11.5A

D

V = 10V

GB

1.0

1.0

RMALIZED DRAIN-S

0.5

DS(ON)

R,N

0

816243240

I , DRAIN CURRENT (A)

D

Fig. 2, On-Resistance vs Gate Voltage and Drain Curren

4

T = -55 C

V = 10V

DS

J

30

20

D

I , DRAIN CURRENT (A)

10

10

125 C

25 C

0.5

, NORMALIZED DRAIN-SOURCE ON-RESIST

-50 -25 0 25 50 75 100 125 150

DS(ON)

R

T , JUNCTION TEMPERATURE (°C)

j

Fig. 3, On-Resistance vs Temperature

0

0.8 1.6 2.4 3.2 4

V , GATE TO SOURCE VOLTAGE (V)

GS

Fig. 4, Transfer Characteristics

DS11609 Rev. C-4 3 of 4 DT455N

30

O

DS(ON)

10

R LIMIT

1ms

10ms

100ms

1s

1

10s

dc

0.1

D

I , DRAIN CURRENT (A)

V = 10V

GS

SINGLE PULSE

R = 42 C

QJA

0.01

TA=25C

0.1 1 10 50

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 5, Maximum Safe OperatingArea

100 s

1.0

0.1

RMALIZED EFFECTIVE

0.01

r(t), N

TRANSIENT THERMAL RESISTANCE

0.001

0.0001 0.001 0.01 0.1 1.0 10 100

D = 0.5

0.2

0.1

0.05

0.02

0.01

Single Pulse

P

t , SQUARE WAVE PULSE DURATION (seconds)

1

Fig. 6, Typical Normalized Transient Thermal Impedance Curves

R (t) = r(t) b R

QJA QJA

R = See Note 1c

QJA

(pk)

t

1

t

2

T - T = P b R (t)

J A PK QJA

Duty Cycle,D=t /t

12

1000 3000

DS11609 Rev. C-4 4 of 4 DT455N