BU9832GUL-W is a serial EEPROM of SPI BUS interface method.
●Features
1) High speed clock action up to 5MHz (Max.)
2) Wait function by
3) Part or whole of memory arrays settable as read only memory area by program.
4) 1.8 ~ 5.5V single power source action most suitable for battery use.
5) Page write mode useful for initial value write at factory shipment.
6) For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)
7) Auto erase and auto end function at data rewrite.
8) Low current consumption
At write action (5V) : 1.5mA (Typ.)
At read action (5V) : 1.0mA (Typ.)
At standby action (5V) : 0.1µA (Typ.)
9) Address auto increment function at read action
10) Write mistake prevention function
Write prohibition at power on.
Write prohibition by command code (WRDI).
Write prohibition by
Write prohibition block setting by status registers (BP1, BP0)
Write mistake prevention function at low voltage.
11) Data at shipment Memory array: FFh, status register WPEN, BP1, BP0 : 0
12) Data kept for 40 years.
13) Data rewrite up to 1,000,000times.
●Page write
HOLD terminal.
WP pin.
No.10001EAT16
Product number Number of pages
BU9832GUL-W
●BU9832GUL-W
Type Capacity Bit format
BU9832GUL-W
●Absolute maximum ratings (Ta=25℃)
Parameter Symbol Ratings Unit
Impressed voltage
Permissible dissipation
Storage Temperature range
Operating Temperature range
Terminal voltage
*1 When using at Ta=25℃ or higher, 220mW to be reduced per 1℃
This IC has status registers. The status registers are of 8 bits and express the following parameters.
BP0 and BP1 can be set by write status register command. These 2 bits are memorized into the EEPROM, therefore are
valid even when power source is turned off.
Rewrite characteristics and data hold time are same as characteristics of the EEPROM.
WEN can be set by write enable command and write disable command. WEN becomes write disable status when power
source is turned off. R
―
/B is for write confirmation, therefore cannot be set externally.
The value of status register can be read by read status command.
●Status registers
Product number bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0
BU9832GUL-W
bit
Memory
location
WPEN EEPROM
BP1
BP0
EEPROM
WEN Register
R―/B Register
●Write disable block setting
BP1 BP0 Write disable block
0 0 None
WPEN0 0 0 BP1 BP0 WENR―/B
Function Contents
WP pin enable / disable designation bit
WPEN=0=invalid
WPEN=1=valid
This enables / disables the functions of
pin.
This designates the write disable area of
EEPROM write disable block designation bit
EEPROM. Write designation areas of product
numbers are shown below.
Write and write status register write
enable / disable status confirmation bit
WEN=0=prohibited
WEN=1=permitted
Write cycle status (READY / BUSY) status
confirmation bit
B/R=0=READY
B/R=1=BUSY
WP
0 1 300h-3FFh
1 0 200h-3FFh
1 1 000h-3FFh
○
WP pin
By setting
WP =LOW, write command is prohibited. As for BU9832GUL-W when WPEN bit is set “1”, the WP pin
functions become valid. And the write command to be disabled at this moment is WRSR.
However, when write cycle is in execution, no interruption can be made.
Product number WRSR WRITE
BU9832GUL-W Prohibition possible but WPEN bit “1”Prohibition impossible
HOLD pin
○
By
HOLD pin, data transfer can be interrupted. When SCK=”1”, by making HOLD from “1” into”0”, data transfer to
EEPROM is interrupted. When SCK = “0”, by making
HOLD from “0” into “1”, data transfer is restarted.
RDSR Read status register Status register read command 0000 0101
WRSR Write status register Status register write command 0000 0001
●Timing chart
1. Write enable (WREN) / disable (WRDI) cycle
・WREN (WRITE ENABLE): Write enable
―――
CS
CS
SCK
SI
SO
00 0 0 0110
High-Z
60371245
Fig.35 Write enable command
・WRDI (WRITE DISABLE): Write disable
――
CS
CS
SCK
03124
5
7
6
SO
00 0 0SI0100
High-Z
Fig.36 Write disable
○This IC has write enable status and write disable status. It is set to write enable status by write enable command, and it
is set to write disable status by write disable command. As for these commands, set
CS LOW, and then input the
respective ope codes. The respective commands accept command at the 7-th clock rise. Even with input over 7 clocks,
command becomes valid.
When to carry out write and write status register command, it is necessary to set write enable status by the write enable
command. If write or write status register command is input in the write disable status, commands are cancelled. And
even in the write enable status, once write and write status register command is executed once, it gets in the write
disable status. After power on, this IC is in write disable status.
By read command, data of EEPROM can be read. As for this command, set CS LOW, then input address after read ope
code. EEPROM starts data output of the designated address. Data output is started from SCK fall of 15
clock, and from D7
to D0 sequentially. This IC has increment read function. After output of data for 1 byte (8bits), by continuing input of SCK,
data of the next address can be read. Increment read can read all the addresses of EEPROM. After reading data of the
most significant address, by continuing increment read, data of the most insignificant address is read.
3. Write command (WRITE)
CS
SCK
SI
SO
124
037856
00000
High-Z
~
~
~
~
~
~
~
~
~
**
A9
~
~
~
~
~
1
0
0
*
233024
~
~
A0A1
~
~
~
~
~
~
D6
~
~
~
~
31
D2 D1D7
D0
*=Don't Care
Fig.38 Write command
By write command, data of EEPROM can be written. As for this command, set
after write ope code. Then, by making
CS HIGH, the EEPROM starts writing. The write time of EEPROM requires time of
tE/W (Max 5ms). During tE/W, other than status read command is not accepted. Start
CS LOW, then input address and data
CS after taking the last data (D0),
and before the next SCK clock starts. At other timing, write command is not executed, and this write command is cancelled.
This IC has page write function, and after input of data for 1 byte (8 bits), by continuing data input without starting
data up to 16 bytes can be written for one tE/W. In page write, the insignificant 4
bit of the designated address is
incremented internally at every time when data of 1 byte is input and data is written to respective addresses. When data of
the maximum bytes or higher is input, address rolls over, and previously input data is overwritten.
Write status register command can write status register data. The data can be written by this command are 2 bits
BP1 (bit3) and BP0 (bit2) among 8 bits of status register. By BP1 and BP0, write disable block of EEPROM can be set. As
for this command, set
EEPROM starts writing. Write time requires time of tE/W as same as write. As for
CS LOW, and input ope code of write status register, and input data. Then, by making CS HIGH,
CS rise, start CS after taking the last
data bit (bit0), and before the next SCK clock starts. At other timing, command is cancelled. Write disable block is
determined by BP1 and BP0, and the block can be selected from 1/4 of memory array, 1/2, and entire memory array.
(Refer to the write disable block setting table.) To the write disabled block, write cannot be made, and only read can be
made.
Set CS “H”, and be sure to set SCK, SI, WP ,HOLD input “L” or “H”. Do not input intermediate electric potantial.
○Timing
As shown in Fig.41, at standby, when SCK is “H”, even if
at SCK rise edge after fall of
CS . At standby and at power ON/OFF, set CS “H” status.
―――
CS
SCK
―――
Even if CS
SI status is not read at that edge.
Command start here. SI is read.
0 1 2
CS is fallen, SI status is not read at fall edge. SI status is read
is fallen at SCK=SI=”H”,
SI
Fig.41 Operating timing
●
WP cancel valid area
WP is normally fixed to “H” or “L” for use, but when WP is controlled so as to cancel write status register command and
write command, pay attention to the following
While write or write status register command is executed, by setting
cancelled. The area from command ope code before
area. However, once write is started, any input cannot be cancelled.
WP valid timing.
WP = “L” in cancel valid area, command can be
CS rise at internal automatic write start becomes the cancel valid
WP input becomes Don’t Care, and cancellation
becomes invalid.
SCK
15 16
Ope Code Data
WP cancel invalid area
CS
tE/W
Data write tim e
WP cancel invalid area
Fig.42
WP valid timing (WRSR)
Ope Code
Address
WP cancel inv alid area
Data
tE /W
Da ta wr ite tim e
WP cancel in valid area
Fig.43 WP valid timing (WRITE)
●
HOLD pin
By HOLD pin, command communication can be stopped temporarily (HOLD status). The HOLD pin carries out command
communications normally when it is HIGH. To get in HOLD status, at command communication, when SCK=LOW, set the
HOLD pin LOW. At HOLD status, SCK and SI become Don’t Care, and SO becomes high impedance (High-Z). To release
the HOLD status, set the
HOLD pin HIGH when SCK=LOW. After that, communication can be restarted from the point
before the HOLD status. For example, when HOLD status is made after A5 address input at read, after release of HOLD
status, by starting A4 address input, read can be restarted. When in HOLD status, leave
CS LOW. When it is set
CS =HIGH in HOLD status, the IC is reset, therefore communication after that cannot be restarted.
CS rise, cancellation cannot be made by any means.
d: tE/W area.
Cancellation is available by
starts (
CS is started) in the area c, cancellation cannot be
CS = “H”. However, when write
made by any means. And by inputting on SCK clock,
cancellation cannot be made. In page write mode, there is
write enable area at every 8 clocks.
Note 1) If Vcc is made OFF during write execution, designated address data is not guaranteed, therefore write it once again.
Note 2) If
CS is started at the same timing as that of the SCK rise, write execution / cancel becomes unstable,therefore,
it is necessary to fall in SCK = “L” area. As for SCK rise, assure timing of tCSS / tCSH or higher.
○WRSR
a: From ope code to 15 rise.
Cancel by
CS =”H”.
b: From 15 clock rise to 16 clock rise (write enable area).
When
After
CS is started, write starts.
CS rise, cancellation cannot be made by any means.
c: After 16 clock rise.
Cancel by
CS =”H”. However, when write starts ( CS is started)
in the area b, cancellation cannot be made by any means.
And, by inputting on SCK clock, cancellation cannot be made.
Note 1) If Vcc is made OFF during write execution, designated address data is not guaranteed, therefore write it once again
Note 2) If
CS is started at the same timing as that of the SCK rise, write execution / cancel becomes unstable, therefore, it is
necessary to fall in SCK = “L” area. As for SCK rise, assure timing of tCSS / tCSH or higher.
○WREN/WRDI
a: From ope code to clock rise, cancel by
b: Cancellation is not available when
In order to realize stable high speed operations, pay attention to the following input / output pin conditions.
○Input pin pull up, pull down resistance
When to attach pull up, pull down resistance to EEPROM input pin, select an appropriate value for the microcontroller V
I
OL
from V
characteristics of this IC.
IL
○Pull up resistance
Microcontroller
“L” output “L” input
I
EEPROM
OLM
OLM
R
PU
Fig.49 Pull up resistance
≥
R
PU
V
OLM
V
V
ILE
Example) When Vcc=5V, V
from the equation ①,
RPU≥
∴RPU≥ 2.3[kΩ]
VCC-V
≤ V
I
OLM
ILE
=1.5V, V
ILM
5-0.4
2×10
OLM
-
・・・①
・・・②
OLM
=0.4V, I
=2mA,
OLM
With the value of RPU to satisfy the above equation, V
0.4V or higher, and with V
(=1.5V), the equation ② is also satisfied.
ILE
・V
・V
・I
:EEPROM V
ILM
:Microcontroller VOL specifications
OLM
:Microcontroller IOL specifications
OLM
specifications
IH
And, in order to prevent malfunction, mistake write at power ON/OFF, be sure to make CS pull up.
○Pull down resistance
V
=5V, V
OHM
I
OHM
IHE
OHM=VCC
-0.5V, I
・・・③
・・・④
OHM
=0.4mA,
×0.7V, from the equation③,
5-0.5
-
0.4×10
OHM
EEPROM
V
IHE
V
I
Fig.50 Pull down resistance
OHM
Example) When V
RPD≥
V
OHM
V
IHM=VCC
≥ V
CC
R
≥
PD
∴RPU≥ 11.3[kΩ]
Further, by amplitude VIHE, VILE of signal input to EEPROM, operation speed changes. By inputting signal of amplitude
/ GND level to input, more stable high speed operations can be realized. On the contrary, when amplitude of 0.8VCC
of V
CC
/ 0.2Vcc is input, operation speed becomes slow.
In order to realize more stable high speed operation, it is recommended to make the values of R
possible, and make the amplitude of signal input to EEPROM close to the amplitude of V
ж
(
1 At this moment, operating timing guaranteed value is guaranteed.)
Load capacity of SO output pin affects upon delay characteristic of SO output. (Data output delay time, time from
to High-Z) In order to make output delay characteristic into higher speed, make SO load capacity small. In concrete, “Do
not connect many devices to SO bus”, “Make the wire between the controller and EEPROM short”, and so forth.
80
VIH/VIL=0.8Vcc/0.2V cc
70
60
50
tPD[ns]
40
30
tPD-CL characteristics
Vcc =2.5V Ta=25
Spec
℃
Spec
EEPROM
SO
CL
20
020406080100120
CL[pF]
Fig.52 SO load dependency of data output delay time
○Other cautions
Make the wire length from the microcontroller to EEPROM input signal same length, in order to prevent setup / hold
violation to EEPROM, owing to difference of wire length of each input.
CS is “L”, this IC gets in input accept status (active). If power is turned on in this status, noises and the likes may
cause malfunction, mistake write or so. To prevent these, at power ON, set
CS “H” (=Vcc).
CS “H”. (When CS is in “H” status, all
inputs are canceled.)
Vcc
V
ND
Vcc
CS
GND
Good example
B
Fig.59 CS timing at power ON/OFF
(Good example)
CS terminal is pulled up to Vcc.
At power OFF, take 10ms or higher before supply. If power is turned on without observing this condition,
the IC internal circuit may not be reset, which please note.
(Bad example)
CS terminal is “L” at power ON/OFF.
In this case,
CS always becomes “L” (active status), and EEPROM may have malfunction, mistake
write owing to noises and the likes.
Even when
CS input is High-Z, the status becomes like this case, which please note.
○P.O.R. circuit
This IC has a P.O.R. (Power On Reset) circuit as mistake write countermeasure. After P.O.R. action, it gets in write disable
status. The P.O.R. circuit is valid only when power is ON, and does not work when power is OFF. When power is ON, if the
recommended conditions of the following tR, tOFF, and Vbot are not satisfied, it may become write enable status owing to
noises and the likes.
When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is
recommended to attach a bypass capacitor (0.1µF) between IC Vcc and GND. At that moment, attach it as close to IC as
possible. And, it is also recommended to attach a bypass capacitor between board Vcc and GND.
○SCK noise
When the rise time (tR) of SCK is long, and a certain degree or more of noise exists, malfunction may occur owing to clock
bit displacement. To avoid this, a Schmitt trigger circuit is built in SCK input. The hysterisis width of this circuit is set about
0.2V, if noises exist at SCK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set the rise time (tR)
of SCK 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise countermeasures. Make the
clock rise, fall time as small as possible.
WP noise
○
During execution of write status register command, if there exist noises on
and forcible cancellation may result, which please note. To avoid this, a Schmitt trigger circuit is built in
same manner, a Schmitt trigger circuit is built in SI input, SI input and
(1) Described numeric values and data are design representative values, and the values are not guaranteed.
(2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further
sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin in
consideration of static characteristics and transition characteristics and fluctuations of external parts and our LSI.
(3) Absolute maximum ratings
If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded,
LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of
fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that
conditions exceeding the absolute maximum ratings should not be impressed to LSI.
(4) GND electric potential
Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is higher than that of
GND terminal.
(5) Heat design
In consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin.
(6) Terminal to terminal short circuit and wrong packaging
When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may
destruct LSI. And in the case of short circuit between LSI terminals and terminals and power source, terminal and GND
owing to foreign matter, LSI may be destructed.
(7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently.
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specied herein is intended only to show the typical functions of and
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