ROHM BU52011GUL, BU52011HFV, BU52021HFV, BU52015GUL, BU52025G TECHNICAL NOTE

Hall IC Series / Hall IC(Latch type)

Bipolar Detection Hall ICs

BU52001GUL, BU52011HFV, BU52021HFV,
BU52015GUL, BU52025G, BU52051NVX, BD7411G

●Description
The bipolar Hall ICs are magnetic switches that can operate both S-and N-pole , upon which the output goes from Hi to Low.
In addition to regular single-output Hall ICs, We offers a line up of dual-output units with a reverse output terminal (active
High).

●Features

1) Bipolar detection

2) Micropower operation (small current using intermittent operation method)(BD7411G is excluded.)

3) Ultra-compact CSP4 package (BU52001GUL,BU52015GUL)

4) Ultra-Small outline package HVSOF5 (BU52011HFV,BU52021HFV)

5) Ultra-Small outline package SSON004X1216 (BU52051NVXV)

6) Small outline package (BU52025G,BD7411G）

7) Line up of supply voltage

For 1.8V Power supply voltage（BU52011HFV,BU52015GUL,BU52051NVX)

For 3.0V Power supply voltage (BU52001GUL)
For 3.3V Power supply voltage (BU52021HFV,BU52025G)
For 5.0V Power supply voltage (BD7411G)

8) Dual output type (BU52015GUL)

9) High ESD resistance 8kV(HBM)

●Applications
Mobile phones, notebook computers, digital video camera, digital still camera, white goods etc.

●Product Lineup

Supply

Product name

BU52001GUL 2.40～3.30 +/-3.7 ※ 0.8 50 8.0μ CMOS VCSP50L1
BU52015GUL 1.65～3.30 +/-3.0 ※ 0.9 50 5.0μ CMOS VCSP50L1
BU52051NVX 1.65～3.30 +/-3.0 ※ 0.9 50 5.0μ CMOS SSON004X1216
BU52011HFV 1.65～3.30 +/-3.0 ※ 0.9 50 5.0μ CMOS HVSOF5
BU52021HFV 2.40～3.60 +/-3.7 ※ 0.8 50 8.0μ CMOS HVSOF5

BU52025G 2.40～3.60 +/-3.7 ※ 0.8 50 8.0μ CMOS SSOP5

BD7411G 4.50～5.50 +/-3.4 ※ 0.4 - 2.0m CMOS SSOP5

※Plus is expressed on the S-pole; minus on the N-pole

voltage

(V)

Operate

point
(mT)

Hysteresis

(mT)

Period

(ms)

Supply
current

(AVG)

(A)

Output

type

Package

June 2008

REV. H

●Absolute Maximum Ratings

BU52001GUL (Ta=25℃) BU52015GUL (Ta=25℃)

PARAMETERS SYMBOL LIMIT UNIT PARAMETERS SYMBOL LIMIT UNIT

1

±1

420

※

V

mA

2

※

mW

Power Supply Voltage
Output Current
Power Dissipation Pd
Operating Temperature Range T
Storage Temperature Range T

※3. Not to exceed Pd
※4. Reduced by 4.20mW for each increase in Ta of 1℃ over 25℃

（mounted on 50mm×58mm Glass-epoxy PCB）

Power Supply Voltage
Output Current

V
I

DD

OUT

-0.1～+4.5

Power Dissipation Pd
Operating Temperature Range T
Storage Temperature Range T

※1. Not to exceed Pd
※2. Reduced by 4.20mW for each increase in Ta of 1℃ over 25℃

（mounted on 50mm×58mm Glass-epoxy PCB）

opr

stg

-40～+85 ℃

-40～+125 ℃

BU52051NVX (Ta=25℃) BU52011HFV (Ta=25℃)

PARAMETERS SYMBOL LIMIT UNIT PARAMETERS SYMBOL LIMIT UNIT

5

±0.5

2049

※

V

mA

6

※

mW

Power Supply Voltage
Output Current
Power Dissipation Pd
Operating Temperature Range T
Storage Temperature Range T

※7. Not to exceed Pd
※8. Reduced by 5.36mW for each increase in Ta of 1℃ over 25℃

（mounted on 70mm×70 mm×1.6mm Glass-epoxy PCB）

Power Supply Voltage
Output Current

V
I

DD

OUT

-0.1～+4.5

Power Dissipation Pd
Operating Temperature Range T
Storage Temperature Range T

※5. Not to exceed Pd
※6. Reduced by 20.49mW for each increase in Ta of 1℃ over 25℃

（mounted on 70mm×70 mm×1.6mm Glass-epoxy PCB）

opr

stg

-40～+85 ℃

-40～+125 ℃

BU52021NVX (Ta=25℃) BU52025G (Ta=25℃)

PARAMETERS SYMBOL LIMIT UNIT PARAMETERS SYMBOL LIMIT UNIT

9

Power Supply Voltage

V

DD

-0.1～+4.5

※

V

Power Supply Voltage

VDD
I

OUT

opr

stg

VDD
I

OUT

opr

stg

VDD

-0.1～+4.5

-40～+85 ℃

-40～+125 ℃

-0.1～+4.5

-40～+85 ℃

-40～+125 ℃

-0.1～+4.5

±0.5

420

±0.5

536

11

3

※

V

mA

4

※

mW

7

※

V

mA

8

※

mW

※

V

I

Output Current

OUT

Power Dissipation Pd
Operating Temperature Range T

※9. Not to exceed Pd

Storage Temperature Range T

※10. Reduced by5.36mW for each increase in Ta of 1℃ over 25℃

（mounted on 70mm×70 mm×1.6mm Glass-epoxy PCB）

opr

stg

±1

10

※

536

-40～+85 ℃

-40～+125 ℃

mA

mW

Output Current
Power Dissipation Pd
Operating Temperature Range T
Storage Temperature Range T

※11. Not to exceed Pd
※12. Reduced by 5.40mW for each increase in Ta of 1℃ over 25℃

（mounted on 70mm×70 mm×1.6mm Glass-epoxy PCB）

BD7411G (Ta=25℃)

PARAMETERS SYMBOL LIMIT UNIT

13

Power Supply Voltage
Output Current

V
I

OUT

Power Dissipation Pd
Operating Temperature Range T
Storage Temperature Range T

-0.3～+7.0

-55～+150 ℃

DD

opr

stg

※

±1

14

※

540

-40～+85 ℃

※13. Not to exceed Pd
※14. Reduced by 5.40mW for each increase in Ta of 1℃ over 25℃

（mounted on 70mm×70 mm

×1.6mm Glass-epoxy PCB）

mA

mW

V

I

OUT

opr

stg

-40～+85 ℃

-40～+125 ℃

540

±1

mA

12

※

mW

2/20

●Magnetic, Electrical Characteristics

BU52001GUL (Unless otherwise specified, V

PARAMETERS SYMBOL

Power Supply Voltage
Operate Point

Release Point

Hysteresis

2.4 3.0 3.3 V

V

DD

B

- 3.7 5.5

opS

B

opN

0.8 2.9 -

B

rpS

B

rpN

B

hysS

B

hysN

＝3.0V, Ta＝25℃)

DD

LIMIT

MIN TYP MAX

-5.5 -3.7 -

- -2.9 -0.8

- 0.8 -

- 0.8 -

UNIT CONDITIONS

mT

mT

mT

Period Tp - 50 100 ms

V

Output High Volｔage VOH

DD

-0.4

- - V

Output Low Voltage VOL - - 0.4 V
Supply Current I

Supply Current
During Startup Time
Supply Current
During Standby Time

- 8 12 μA Average

DD(AVG)

I

- 4.7 - mA During Startup Time Value

DD(EN)

- 3.8 - μA During Standby Time Value

I

DD(DIS)

B

<B<B

rpN

=-1.0mA

I

OUT

B<B

opN,BopS

=+1.0mA

I

OUT

※15

rpS

<B ※15

※15 B = Magnetic flux density

1mT=10Gauss
Positive (“+”) polarity flux is defined as the magnetic flux from south pole which is direct toward to
the branded face of the sensor.

After applying power supply, it takes one cycle of period (TP) to become definite output.
Radiation hardiness is not designed.

3/20

V

BU52015GUL (Unless otherwise specified,

PARAMETERS SYMBOL

＝1.80V, Ta＝25℃)

DD

LIMIT

MIN TYP MAX

UNIT CONDITIONS

Power Supply Voltage VDD 1.65 1.80 3.30 V

B

Operate Point

Release Point

- 3.0 5.0

opS

mT

B

-5.0 -3.0 -

opN

B

0.6 2.1 -

rpS

mT

B

- -2.1 -0.6

rpN

Hysteresis

B

hysS

- 0.9 ­mT

B

hysN

- 0.9 -

Period Tp - 50 100 ms

OUT1: B
OUT2: B<B
I

Output High Volｔage VOH

V

DD

-0.2

- - V

OUT1: B<B

Output Low Voltage VOL - - 0.2 V

OUT2: B

I
Supply Current 1 I
Supply Current

During Startup Time 1
Supply Current
During Standby Time 1

Supply Current 2 I
Supply Current

During Startup Time 2
Supply Current
During Standby Time 2

DD1(AVG)

I

DD1(EN)

I

DD1(DIS)

DD2(AVG)

I

DD2(EN)

I

DD2(DIS)

- 5 8 μA VDD=1.8V , Average

- 2.8 - mA

- 1.8 - μA

VDD=1.8V,

During Startup Time Value

VDD=1.8V,

During Standby Time Value

- 8 12 μA VDD=2.7V , Average

- 4.5 - mA

- 4.0 - μA

VDD=2.7V,

During Startup Time Value

V

During Standby Time Value

OUT

OUT

DD

=2.7V,

<B<B

rpN

opN

= -0.5mA

opN

<B<B

rpN

= +0.5mA

, B

, B

rpS

opS

opS

rpS

※16 B = Magnetic flux density

1mT=10Gauss
Positive (“+”) polarity flux is defined as the magnetic flux from south pole which is direct toward to
the branded face of the sensor.
After applying power supply, it takes one cycle of period (T

) to become definite output.

P

Radiation hardiness is not designed.

※16

<B

<B ※16

4/20

BU52051NVX , BU52011HFV (Unless otherwise specified, V

LIMIT

PARAMETERS SYMBOL

MIN TYP MAX

＝1.80V, Ta＝25℃)

DD

UNIT CONDITIONS

Power Supply Voltage VDD 1.65 1.80 3.30 V

Operate Point

Release Point

Hysteresis

opS

B

-5.0 -3.0 -

opN

B

0.6 2.1 -

rpS

B

- -2.1 -0.6

rpN

B

- 0.9 -

hysS

B

- 0.9 -

hysN

mT

mT

mT

- 3.0 5.0

B

Period Tp - 50 100 ms
Output High Volｔage VOH

DD

-0.2

- - V

V

Output Low Voltage VOL - - 0.2 V
Supply Current 1 I

Supply Current
During Startup Time 1
Supply Current
During Standby Time 1

Supply Current 2 I
Supply Current

During Startup Time 2
Supply Current
During Standby Time 2

DD1(AVG)

I

DD1(EN)

I

DD1(DIS)

DD2(AVG)

I

DD2(EN)

I

DD2(DIS)

- 5 8 μA VDD=1.8V , Average

-

-

-

-

2.8

1.8

-

8

4.5

4.0

- mA

- μA

12 μA VDD=2.7V , Average

- mA

- μA

B

<B<B

rpN

=-0.5mA

I

OUT

B<B

opN

=+0.5mA

I

OUT

V

=1.8V,

DD

※17

rpS

, B

<B ※17

opS

During Startup Time Value
VDD=1.8V,
During Standby Time Value

VDD=2.7V,
During Startup Time Value
V

=2.7V,

DD

During Standby Time Value

BU52021HFV,BU52025G (Unless otherwise specified, V

PARAMETERS SYMBOL

MIN TYP MAX

＝3.0V, Ta＝25℃)

DD

LIMIT

UNIT CONDITIONS

Power Supply Voltage VDD 2.4 3.0 3.6 V
Operate Point

Release Point

Hysteresis

- 3.7 5.5

opS

B

-5.5 -3.7 -

opN

B

0.8 2.9 -

rpS

B

- -2.9 -0.8

rpN

B

hysS

B

hysN

- 0.8 -

- 0.8 -

mT

mT

mT

B

Period Tp - 50 100 ms

Output High Volｔage VOH

DD

-0.4

- - V

V

Output Low Voltage VOL - - 0.4 V

I

Supply Current
Supply Current

During Startup Time
Supply Current
During Standby Time

DD(AVG)

I

-

DD(EN)

-

I

DD(DIS)

-

8

4.7

3.8

12 μA Average

- mA During Startup Time Value

- μA During Standby Time Value

B

<B<B

rpN

=-1.0mA

I

OUT

B<B

opN

=+1.0mA

I

OUT

※17

rpS

, B

<B ※17

opS

※17 B = Magnetic flux density

1mT=10Gauss
Positive (“+”) polarity flux is defined as the magnetic flux from south pole which is direct toward to
the branded face of the sensor.
After applying power supply, it takes one cycle of period (TP) to become definite output.
Radiation hardiness is not designed.

5/20

BD7411G (Unless otherwise specified, V

PARAMETERS SYMBOL

Power Supply Voltage VDD

B

Operate Point

Release Point

Hysteresis

opS

B

opN

B

rpS

B

rpN

B

hysS

B

hysN

Output High Volｔage VOH

Output Low Voltage VOL

Supply Current IDD

＝5.0V, Ta＝25℃)

DD

LIMIT

MIN TYP MAX

4.5 5.0 5.5

- 3.4 5.6

-5.6 -3.4 -

1.5 3.0 -

- -3.0 -1.5

- 0.4 -

- 0.4 -

4.6

- - 0.4

- 2 4

- -

UNIT CONDITIONS

V

mT

mT

mT

V

V

B

<B<B

rpN

=-1.0mA

I

OUT

B<B

opN

=+1.0mA

I

OUT

, B

※18

rpS

<B ※18

opS

mA

※18 B = Magnetic flux density

1mT=10Gauss
Positive (“+”) polarity flux is defined as the magnetic flux from south pole which is direct toward to
the branded face of the sensor.
Radiation hardiness is not designed.

6/20

●Figure of measurement circuit

Bop/Brp

Tp

200Ω

VDD

100μF

VDD

GND

OUT

VDD

Oscilloscope

V

Bop and Brp are measured with applying the magnetic field
from the outside.

Fig.1 Bop,B

measurement circuit

rp

The period is monitored by Oscilloscope.

Fig.2 Tp measurement circuit

VOH

VDD

100μF

VDD

GND

OUT

BU52001GUL, BU52021HFV, BU52025G, BD7411G 1.0mA
BU52015GUL, BU52051NVX, BU52011HFV 0.5mA

I

V

OUT

Product Name I

Fig.3 V

measurement circuit

OH

VOL

VDD

100μF

VDD

GND

OUT

V

BU52001GUL, BU52021HFV, BU52025G, BD7411G 1.0mA
BU52015GUL, BU52051NVX, BU52011HFV 0.5mA

I

OUT

Product Name I

Fig.4 V

measurement circuit

OL

VDD

GND

OUT

OUT

OUT

IDD

VDD

A

Fig.5 I

C

measurement circuit

DD

VDD

GND

OUT

Product Name C

BU52001GUL,BU52015GUL,BU52051NVX,
BU52011HFV, BU52021HFV, BU52025G
BD7411G

7/20

2200μF

100μF

● Technical (Reference) Data

BU52001GUL (V

8.0

6.0

4.0

2.0

0.0

-2.0

-4.0

-6.0

MAGNETIC FLUX DENSITY [mT]

-8.0

-60 -40 -20 0 20 40 60 80 100

Fig.6 Bop,Brp–

Ambient temperature

=2.4～3.3V type)

DD

V

=3.0V

DD

AMBIENT TEMPERATURE [℃]

Bop S

Brp S

Brp N

Bop N

100

90

Ta = 25°C

80
70
60
50
40

PERIOD [ms]

30
20
10

0

2.0 2.4 2.8 3.2 3.6
SUPPLY VOLTAGE [V]

Fig.9 TP– Supply voltage

8.0

6.0

Ta = 25°C

4.0

2.0

0.0

-2.0

-4.0

-6.0

MAGNETIC FLUX DENSITY [mT]

-8.0

2.02.42.83.23.6
SUPPLY VOLTAGE ［V

Bop S

Brp S

Brp N

Bop N

］

Fig.7 Bop,Brp– Supply voltage

14.0

12.0

VDD=3.0V

10.0

8.0

6.0

4.0

2.0

0.0

AVERAGE SUPPLY CURRENT [µA]

-60 -40 -20 0 20 40 60 80 100

AMBIENT TEMPERATURE [℃]

Fig.10 IDD– Ambient

temperature

100

90

VDD=3.0V

80
70
60
50
40

PERIOD [ms]

30
20
10

0

-60 -40 -20 0 20 40 60 80 100
AMBIENT TEMPERATURE [℃]

Fig.8 T

14.0

12.0

10.0

8.0

6.0

4.0

2.0

AVERAGE SUPPLY CURRENT [µA]

0.0

2.0 2.4 2.8 3.2 3.6

– Ambient

P

temperature

Ta = 25°C

SUPPLY VOLTAGE [V]

Fig.11 IDD – Supply voltage

BU52015GUL, BU52051NVX, BU52011HFV (V

8.0

6.0

=1.8V

V

DD

4.0

2.0

0.0

-2.0

-4.0

-6.0

MAGNETIC FLUX DENSITY [mT]

-8.0

-60 -40 -20 0 20 40 60 80 100

AMBIENT TEMPERATURE [℃]

Bop S

Brp S

Brp N

Bop N

Fig.12 Bop,Brp–

Ambient temperature

100

90

Ta = 25°C

80
70
60
50
40

PERIOD [ms]

30
20
10

0

1.4 1.8 2.2 2.6 3.0 3.4 3.8
SUPPLY VOLTAGE [V]

=1.65～3.3V type)

DD

8.0

6.0

Ta = 25°C

4.0

2.0

0.0

-2.0

-4.0

-6.0

MAGNETIC FLUX DENSITY [mT]

-8.0

1.4 1.8 2.2 2.6 3.0 3. 4 3. 8

SUPPLY VOLTAGE ［V

Bop S

Brp S

Brp N

Bop N

］

Fig.13 Bop,Brp– Supply voltage

14.0

12.0

VDD=1.8V

10.0

8.0

6.0

4.0

2.0

0.0

AVERAGE SUPPLY CURRENT [µA]

-60 -40 -20 0 20 40 60 80 100

AMBIENT TEMPERATURE [℃]

100

90

VDD=1.8V

80
70
60
50
40

PERIOD [ms]

30
20
10

0

-60 -40 -20 0 20 40 60 80 100
AMBIENT TEMPERATURE [℃]

Fig.14 TP – Ambient

temperature

14.0

12.0

Ta = 25°C

10.0

8.0

6.0

4.0

2.0

AVERAGE SUPPLY CURRENT [µA]

0.0

1.4 1.8 2.2 2.6 3.0 3.4 3.8
SUPPLY VOLTAGE [V]

Fig.15 TP– Supply voltage

Fig.16 IDD– Ambient

temperature

8/20

Fig.17 IDD – Supply voltage

BU52021HFV, BU52025G (V

8.0

6.0

V

=3.0V

DD

4.0

2.0

0.0

-2.0

-4.0

-6.0

MAGNETIC FLUX DENSITY [mT]

-8.0

-60 -40 -20 0 20 40 60 80 100
AMBIENT TEMPERATURE [℃]

Brp N

Bop N

Fig.18 Bop,Brp–

Ambient temperature

Bop S

Brp S

=2.4～3.6V type)

DD

8.0

6.0

Ta = 25°C

4.0

2.0

0.0

-2.0

-4.0

-6.0

MAGNETIC FLUX DENSITY [mT]

-8.0

2.0 2.4 2.8 3.2 3.6 4.0
SUPPLY VOLTAGE ［V

Bop S

Brp S

Brp N

Bop N

］

Fig.19 Bop,Brp– Supply voltage

100

90
80

VDD=3.0V

70
60
50
40
30
20
10

0

AVERAGE SUPPLY CURRENT [µA]

-60 -40 -20 0 20 40 60 80 100
AMBIENT TEMPERATURE [℃]

Fig.20 TP – Ambient

temperature

100

90

Ta = 25°C

80
70
60
50
40

PERIOD [ms]

30
20
10

0

2.0 2.4 2.8 3.2 3.6 4.0
SUPPLY VOLTAGE [V]

Fig.21 TP – Supply voltage

BD7411G (V

8.0

6.0

4.0

2.0

0.0

-2.0

-4.0

-6.0

MAGNETIC FLUX DENSITY [mT]

-8.0

=4.5～5.5V type)

DD

V

=5.0V

DD

-60 -40 -20 0 20 40 60 80 100

AMBIENT TEMPERATURE [℃]

Fig.24 Bop,Brp–

Ambient temperature

6.0

5.0

Ta = 25°C

4.0

3.0

2.0

1.0

0.0

AVERAGE SUPPLY CURRENT [mA]

4.0 4.5 5.0 5.5 6.0
SUPPLY VOLTAGE [V]

Fig.27 IDD – Supply voltage

14.0

12.0

VDD=3.0V

10.0

8.0

6.0

4.0

2.0

0.0

AVERAGE SUPPLY CURRENT [µA]

-60 -40 -20 0 20 40 60 80 100

AMBIENT TEMPERATURE [℃]

Fig.22 IDD – Ambient

8.0

Bop S

Brp S

Brp N

Bop N

6.0

4.0

2.0

0.0

-2.0

-4.0

-6.0

MAGNETIC FLUX DENSITY [mT]

-8.0

temperature

Ta = 25°C

4.04.55.05.56.0
SUPPLY VOLTAGE ［V

Bop S

Brp S

Brp N

Bop N

］

14.0

12.0

Ta = 25°C

10.0

8.0

6.0

4.0

2.0

0.0

AVERAGE SUPPLY CURRENT [µA]

2.0 2.4 2.8 3.2 3.6 4.0
SUPPLY VOLATAGE [V]

Fig.23 IDD – Supply voltage

6.0

5.0

VDD=5.0V

4.0

3.0

2.0

1.0

0.0

AVERAGE SUPPLY CURRENT [mA]

-60 -40 -20 0 20 40 60 80 100

AMBIENT TEMPERATURE [℃]

Fig.25 Bop,Brp– Supply voltage Fig.26 IDD – Ambient

temperature

9/20

●Block Diagram

BU52001GUL

ＶDD

A1

HALL
ELEMENT

×

TIMING LOGIC

OFFSET

DYNAMIC

CANCELLATION

SAMPLE

& HOLD

Fig.28

PIN No. PIN NAME FUNCTION COMMENT

A1
A2
B1
B2

VDD

GND

OUT
N.C.

POWER SUPPLY

GROUND

OUTPUT

OPEN or Short to GND.

BU52015GUL

VDD

B2

HALL
ELEMENT

×

TIMING LOGIC

OFFSET

DYNAMIC

CANCELLATION

SAMPLE

& HOLD

LATCH

Fig.29

PIN No. PIN NAME FUNCTION COMMENT

A1 OUT1 Output pin (Active Lo w)

0.1μF

Adjust the bypass capacitor
value as necessary, according
to voltage noise conditions, etc.

The CMOS output terminals enable direct

B1

OUT

connection to the PC, with no external pull-up

LATCH

A2

resistor required.

GND

A1

A2

A2

A1

B2

B1

B2

Surface

B1

Reverse

0.1μF
Adjust the bypass capacitor

value as necessary, according
to voltage noise conditions, etc.

A2

A2

A1

GND
VDD

A1

OUT1

The CMOS output terminals enable direct
connection to the PC, with no external pull-up
resistor required.

A2

OUT2

B1

GND

A1

A2 OUT2 Output pin (Active High)
B1 GND GROUND
B2 VDD Power Supply Voltage

10/20

B1

Surface

B2

B2 B1

Reverse

BU52051NVX

ＶDD

4

HALL
ELEMENT

×

TIMING LOGIC

OFFSET

DYNAMIC

CANCELLATION

SAMPLE

& HOLD

Fig.30

PIN No. PIN NAME FUNCT ION COMMENT

1
2
3
4

OUT OUTPUT
GND GROUND

N.C. OPEN or Short to GND.

VDD POWER SUPPLY

BU52011HFV,BU52021HFV

HALL
ELEMENT

TIMING LOGIC

ＶDD

4

×

OFFSET

DYNAMIC

CANCELLATION

SAMPLE

& HOLD

Fig.31

PIN No. PIN NAME FUNCTION COMMENT

1
2
3
4
5

N.C. OPEN or Short to GND.

GND GROUND

N.C. OPEN or Short to GND.
VDD POWER SUPPLY
OUT OUTPUT

0.1μF
Adjust the bypass capacitor

value as necessary, according
to voltage noise conditions, etc.

The CMOS output terminals enable direct
connection to the PC, with no external pull-up

OUT

1

LATCH

2

resistor required.

GND

4 3

3 4

1 2

Surface

2 1

Reverse

0.1μF
Adjust the bypass capacitor
value as necessary, according
to voltage noise conditions, etc.

The CMOS output terminals enable direct
connection to the PC, with no external pull-up

OUT

5

LATCH

2

resistor required.

GND

5

4

4

5

1

Surface

2

3

3

2

Reverse

1

11/20

BU52025G

HALL
ELEMENT

TIMING LOGIC

ＶDD

4

×

OFFSET

DYNAMIC

CANCELLATION

SAMPLE

& HOLD

Fig.32

PIN No. PIN NAME FUNCTION COMMENT

1
2
3
4
5

N.C. OPEN or Short to GND.

GND GROUND

N.C. OPEN or Short to GND.
VDD POWER SUPPLY
OUT OUTPUT

BD7411G

ＶDD

5

REG

HALL
ELEMENT

TIMING LOGIC

×

OFFSET

DYNAMIC

CANCELLATION

SAMPLE

& HOLD

Fig.33

PIN No. PIN NAME FUNCTION COMMENT

1
2
3
4
5

N.C. OPEN or Short to GND.
GND GROUND

N.C. OPEN or Short to GND.
OUT OUTPUT
VDD POWER SUPPLY

0.1μF
Adjust the bypass capacitor
value as necessary, according
to voltage noise conditions, etc.

The CMOS output terminals enable direct
connection to the PC, with no external pull-up

OUT

5

LATCH

2

resistor required.

GND

5

4

4

5

1

Surface

2

3

3

2

1

Reverse

0.1μF

Adjust the bypass capacitor
value as necessary, according
to voltage noise conditions, etc.

The CMOS output terminals enable direct
connection to the PC, with no external pull-up
resistor required.

OUT

4

LATCH

2

GND

5

4

4

5

1

Surface

2

3

3

2

1

Reverse

12/20

●Description of Operations
(Micropower Operation)

I

DD

Startup time

(Offset Cancelation)

VDD

B

×

GND
Fig.35

Period

Standby

Fig.34

I

＋

Hall Voltage

－

The bipolar detection Hall IC adopts an intermittent
operation method to save energy. At startup, the Hall
elements, amp, comparator and other detection circuits
power ON and magnetic detection begins. During standby,
the detection circuits power OFF, thereby reducing current
consumption. The detection results are held while standby
is active, and then output.

t

Reference period: 50ms (MAX100ms)
Reference startup time: 48μs

※BD7411G don’t adopts an intermittent operation method.

The Hall elements form an equivalent Wheatstone (resistor)
bridge circuit. Offset voltage may be generated by a
differential in this bridge resistance, or can arise from
changes in resistance due to package or bonding stress. A
dynamic offset cancellation circuit is employed to cancel this
offset voltage.
When Hall elements are connected as shown in Fig. 35 and a
magnetic field is applied perpendicular to the Hall elements,
voltage is generated at the mid-point terminal of the bridge.
This is known as Hall voltage.
Dynamic cancellation switches the wiring (shown in the
figure) to redirect the current flow to a 90˚ angle from its
original path, and thereby cancels the Hall voltage.
The magnetic signal (only) is maintained in the sample/hold
circuit during the offset cancellation process and then
released.

13/20

(Magnetic Field Detection Mechanism)

Low

The bipolar detection
relationship between magnetic flux density and the distance separating the magnet and the Hall IC: when distance increases
magnetic density falls. When it drops below the operate point (Bop), output goes HIGH. When the magnet gets closer to the IC
and magnetic density rises, to the operate point, the output switches LOW. In LOW output mode, the distance from the magnet to
the IC increases again until the magnetic density falls to a poi nt just below Bop, and output returns HIGH. (This point, where
magnetic flux density restores HIGH output, is known as the release point, Brp.) This detection and adjustment mechan ism is
designed to prevent noise, oscillation and other erratic system operatio n.

The Hall IC cannot detect magnetic fields that run horizontal to the package top layer.
Be certain to configure the Hall IC so that the magnetic field is perpendicular to the top layer.

Hall IC detects magnetic fields running perpendicular to the top surface of the package. There is an inverse

S

S
N

Flux

S
N

High

Bop N Brp N

N-Pole

S

Fig.36

S

OUT [V]

Flux

High

0

Magnetic flux density [mT]

Fig.37

14/20

N

N

S

Flux

Brp S

S

N

N

Flux

High

Low

B

Bop S

S-Pole

●Intermittent Operation at Power ON
Power ON

VDD

Supply current

(Intermittent action)

Startup time

Standby time

Startup time

Standby time

OUT

(No magnetic
field present)

Indefinite

Indefinite

High

(Magnetic
field present)

Low

Fig.38

The bipolar detection Hall IC adopts an intermittent operation method in detecti ng the magnetic field during startup, as
shown in Fig. 38. It outputs to the appropriate terminal based on the detection result and maintains the output condition
during the standby period. The time from power ON until the end of the i nitial startup period is an indefinite interval, but it
cannot exceed the maximum period, 100ms. To accommodate the system design, the Hall IC output read should be
programmed within 100ms of power ON, but after the time allowed for the period ambient temperature and supply voltage.

※BD7411G don’t adopts an intermittent operation method.

●Magnet Selection

Of the two representative varieties of permanent magnet, neodymium generally offers greater magnetic power per volume
than ferrite, thereby enabling the highest degree of miniaturization, T hus, neodymium is best suited for small equipment
applications. Fig. 39 shows the relation between the size (volume) of a ne odymium magnet and ma gnetic flux densit y. The
graph plots the correlation between the distance (L) from three versions of a 4mm X 4mm cross-section neodymium magnet
(1mm, 2mm, and 3mm thick) and magnetic flux density. Fig. 40 shows Hall IC detection distance – a good guide for
determining the proper size and detection distance of the magnet. Based on the BU52011HFV, BU52015GUL operating
point max 5.0 mT, the minimum detection distance for the 1mm, 2mm and 3mm magnets would be 7.6mm, 9.22mm, and

10.4mm, respectively. To increase the magnet’s detection distance, either increase its thickness or sectional area.

Magnet material: NEOMAX-44H (material)

10

9
8
7
6
5
4
3

Magnetic flux density[mT]

2
1
0

02468101214161820

Y

Magnet size

t=1mm

7.6mm

Distance between magnet and Hall IC [mm]

X

t

X=Y=4mm
t=1mm,2mm,3mm

Fig.40 Magnet Dimensions and

…Flux density measuring point

Flux Density Measuring Point

t=3mm

9.2mm

10.4mm

Fig.39

Magnet

L: Variable

15/20

t=2mm

Maker: NEOMAX CO.,LTD.

t

●Position of the Hall Effect IC(Reference)

(

)

(

)

●Footprint dimensions (Optimize footprint dimensions to the board design and soldering condition)

●Terminal Equivalent Circuit Diagram

VCSP50L1

0.55

0.55

0.35

VCSP50L1

OUT , OUT1, OUT2

Fig.41

SSON004X1216

0.6

0.8

0.2

SSON004X1216

VDD

GND

Because they are configured for CMOS (inverter) output, the
output pins require no external resistance and allow direct
connection to the PC. This, in turn, enables reduction of the
current that would otherwise flow to the external resistor
during magnetic field detection, and supports overall low
current (micropower) operation.

HVSOF5

0.6

0.2

HVSOF5

SSOP5

0.8

1.45

0.6

UNIT：mm

SSOP5

UNIT：mm

16/20

●Operation Notes

1） Absolute maximum ratings

Exceeding the absolute maximum ratings for supply voltage, operating conditions, etc. may result in damage to or
destruction of the IC. Because the source (short mode or open mode) cannot be identified if the device is damaged in this
way, it is important to take physical safety measures such as fusing when implementin g any special mod e that operates in
excess of absolute rating limits.

2) GND voltage

Make sure that the GND terminal potential is maintained at the minimum in any operating state, and is al ways kept lower
than the potential of all other pins.

3) Thermal design

Use a thermal design that allows for sufficient margin in light of the power dissipation (Pd) in actual operating conditions.

4) Pin shorts and mounting errors

Use caution when positioning the IC for mounting on printed circuit boards. Mounting errors, such as improper positioning or
orientation, may damage or destroy the device. The IC may also be damaged or destroyed if output pins are shorted
together, or if shorts occur between the output pin and supply pin or GND.

5) Positioning components in proximity to the Hall IC and magnet

Positioning magnetic components in close proximity to the Hall IC or magnet may alter the magnetic field, and therefore the
magnetic detection operation. Thus, placing magnetic compon ents near the Hall IC and magnet should be avoide d in the
design if possible. However, where there is no alternative to employing such a design, be sure to thoroughly test and
evaluate performance with the magnetic component(s) in place to verify normal operation before implementing the design.

6) Slide-by position sensing

Fig.42 depicts the slide-by configuration employed for position sensing. Note that when the gap (d) between the magnet and
the Hall IC is narrowed, the reverse magnetic field generat ed by the magnet can cause the IC to malfunction. As seen in
Fig.43, the magnetic field runs in opposite directions at Point A and Point B. Since the bipolar detection Hall IC can de tect
the S-pole at Point A and the N-pole at Point B, it can wind up switching output ON as the magnet slides by in the process of
position detection. Fig. 44 plots magnetic flux density during the m agnet slide-by. Although a reverse magnetic field was
generated in the process, the magnetic flux density decreased compared with the center of the magnet. This demonstrates
that slightly widening the gap (d) between the magnet and Hall IC reduces the reverse magnetic field and prevents
malfunctions.

Magnet

Slide

d

L

Hall IC

Fig.42

7) Operation in strong electromagnetic fields

Flux

A

S

N

Fig.43

B

Flux

10

8
6
4
2
0

-2

-4

-6

-8

-10

Magnetic fux density[mT]

012345678910

Horizontal distance from the magnet [mm]

Reverse

Fig.44

Exercise extreme caution about using the device in the presence of a strong electr oma gnetic field, as such use m ay caus e
the IC to malfunction.

8) Common impedance

Make sure that the power supply and GND wiring limits common impedance to the extent possible by, for example,
employing short, thick supply and ground lines. Also, take measures to minimize ripple such as using an inductor or
capacitor.

9) GND wiring pattern

When both a small-signal GND and high-current GND are provided, single- point groun din g at the reference point of the set
PCB is recommended, in order to separate the small-signal and high-current patterns, and to ensure that voltage changes
due to the wiring resistance and high current do not cause any voltage fluctuation in the small-signal GND. In the same way ,
care must also be taken to avoid wiring pattern fluctuations in the GND wiring pattern of external components.

17/20

p

10) Exposure to strong light

Exposure to halogen lamps, UV and other strong light sources may cause the IC to malfunction. If the IC is subject to such
exposure, provide a shield or take other measures to protect it from the light. In testing, exposure to white LED and
fluorescent light sources was shown to have no significant effect on the IC.

11) Power source design

Since the IC performs intermittent operation, it has peak current when it’s ON. Please taking that into account and under
examine adequate evaluations when designing the power source.

●Product Designations (Selecting a model name when ordering)

B

U

5

2

0

0

1

G

U

L

E2

ROHM model

VCSP50L1

<Dimensions>

Part number

1PIN MARK

4-φ0.25±0.05

0.05

B

A

B

A

0.30±0.1 0.50

1.10±0.1

12

Package type

VSCP50L1
SSON004X1216
HVSOF5
SSOP5

< Tape/Reel Info >

Tape

1.10±0.10.10±0.05

0.55MAX

S

0.08

A

S

0.30±0.10.50

B

(Unit: mm)

Quantity
Direction

of feed

1234 1234 1234 1234 1234

TR, E2 = Reel-wound embossed taping

: GUL
: NVX
: HFV
: G

VSCP50L1
SSON004X1216
HVSOF5
SSOP5

Embossed carrier tape
3000pcs

E2

(Correct direction: With reel in the lef t han d, th e 1pin of the prod uct shoul d be
at the upper left. Pull tape out with the right hand)

Reel

1pin

※Orders are available in complete units only.

: E2
: TR
: TR
: TR

Direction of feed

SSON004X1216

<Dimensions>

4 3

1 2

< Tape/Reel Info >

Tape
Quantity
Direction

of feed

Embossed carrier tape
5000

TR
(Correct direction: With reel in the left hand, the 1pin of the product
should be at the upper left. Pull tape out with the right hand)

cs

2

1

4 3

(Unit:mm)

Reel

※Orders are available in complete units only.

1pin

Feed direction

18/20

p

p

SSOP5

<Dimensions>

5

-0.1

+0.2

2.8±0.2

1.6

1 2 3

1.1±0.05

1.25MAX

0.95

0.05±0.05

2.9±0.2

< Tape/Reel Info >

Tape

+6°

4°

4

-4°

Quantity
Direction

of feed

0.42

+0.05

-0.04

0.2MIN

+0.05

0.13

-0.03

Embossed carrier tape

cs

3000

TR
(Correct direction: With reel in the left hand, the 1pin of the product
should be at the upper left. Pull tape out with the right hand)

XXX
X X X

XXX
X X X

XXX
X X X

XX X
X X X

X X X

X X X

HVSOF5

<Dimensions>

(Unit:mm)

(Unit: mm)

Reel

< Tape/Reel Info >

Tape
Quantity
Direction

of feed

Embossed carrier tape
3000

TR
(Correct direction: With reel in the left hand, the 1pin of the product
should be at the upper left. Pull tape out with the right hand)

XXX
X X X

Reel

1pin

Feed direction

※Orders are available in complete units only.

cs

XXX
X X X

XXX
X X X

1pin

XX X
X X X

X X X

X X X

Feed direction

※Orders are available in complete units only.

19/20