Page 1
Philips Semiconductors Object specification
Silicon Diffused Power Transistor BU4530AW
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PINNING - SOT429 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 16 A
Collector current peak value - 40 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 10.0 A; IB = 2.5 A - 3.0 V
Collector saturation current f = 32 kHz 10 - A
f = 90 kHz 8 - A
Fall time I
= 10.0 A; f = 32 kHz t.b.f t.b.f µs
Csat
I
= 8 A; f = 90 kHz t.b.f t.b.f µs
Csat
PIN DESCRIPTION
c
1 base
2 collector
b
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
-I
P
T
T
CESM
CEO
BM
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 16 A
Collector current peak value - 40 A
Base current (DC) - 10 A
Base current peak value - 15 A
Reverse base current peak value
1
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Storage temperature -55 150 ˚C
Junction temperature - 150 ˚C
2
1
3
e
-10A
1 Turn-off current.
January 1998 1 Rev 1.000
Page 2
Philips Semiconductors Object specification
Silicon Diffused Power Transistor BU4530AW
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
EBO
V
CEsat
V
BEsat
h
FE
h
FE
Junction to mounting base - - 1.0 K/W
Junction to ambient in free air 45 - K/W
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA
Base-emitter breakdown voltage IB = 1 mA 7.5 14 - V
Collector-emitter saturation voltage IC = 10.0 A; IB = 2.5 A - - 3.0 V
Base-emitter saturation voltage IC = 10.0 A; IB = 2.5 A t.b.f - 1.0 V
DC current gain IC = 1 A; VCE = 5 V - t.b.f -
IC = 10 A; VCE = 5 V 4.2 5.35 6.5
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (32 kHz line I
deflection dynamic test circuit).
t
s
t
f
Turn-off storage time t.b.f t.b.f µs
Turn-off fall time t.b.f t.b.f µs
Switching times (90 kHz line I
deflection dynamic test circuit).
t
s
t
f
Turn-off storage time t.b.f t.b.f µs
Turn-off fall time t.b.f t.b.f µs
= 10.0 A;IB1 = 2A;(IB2 = -5A)
Csat
= 8 A;IB1 = 1.6A;(IB2 = -4.8A)
Csat
2 Measured with half sine-wave voltage (curve tracer).
January 1998 2 Rev 1.000
Page 3
Philips Semiconductors Object specification
Silicon Diffused Power Transistor BU4530AW
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
21
max
15.5
min
3.5
4.0
max
2.2 max
3.2 max
16 max
5.3
15.5
max
1
2
5.45
3
1.1
5.45
7.3
seating
plane
0.4
5.3 max
1.8
o
3.5
max
2.5
0.9 max
M
Fig.1. SOT429; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
January 1998 3 Rev 1.000
Page 4
Philips Semiconductors Object specification
Silicon Diffused Power Transistor BU4530AW
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
January 1998 4 Rev 1.000
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