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BU52011GUL
TECHNICAL NOTE
19 pgs671.83 Kb0

ROHM BU52011GUL, BU52011HFV, BU52021HFV, BU52015GUL, BU52025G TECHNICAL NOTE

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Hall IC Series / Hall IC(Latch type)
Bipolar Detection Hall ICs
BU52001GUL, BU52011HFV, BU52021HFV, BU52015GUL, BU52025G, BU52051NVX, BD7411G
●Description The bipolar Hall ICs are magnetic switches that can operate both S-and N-pole , upon which the output goes from Hi to Low. In addition to regular single-output Hall ICs, We offers a line up of dual-output units with a reverse output terminal (active High).
●Features
1) Bipolar detection
2) Micropower operation (small current using intermittent operation method)(BD7411G is excluded.)
3) Ultra-compact CSP4 package (BU52001GUL,BU52015GUL)
4) Ultra-Small outline package HVSOF5 (BU52011HFV,BU52021HFV)
5) Ultra-Small outline package SSON004X1216 (BU52051NVXV)
6) Small outline package (BU52025G,BD7411G）
7) Line up of supply voltage
For 1.8V Power supply voltage（BU52011HFV,BU52015GUL,BU52051NVX)
For 3.0V Power supply voltage (BU52001GUL) For 3.3V Power supply voltage (BU52021HFV,BU52025G) For 5.0V Power supply voltage (BD7411G)
8) Dual output type (BU52015GUL)
9) High ESD resistance 8kV(HBM)
●Applications Mobile phones, notebook computers, digital video camera, digital still camera, white goods etc.
●Product Lineup
Supply
Product name
BU52001GUL 2.40～3.30 +/-3.7 ※ 0.8 50 8.0μ CMOS VCSP50L1 BU52015GUL 1.65～3.30 +/-3.0 ※ 0.9 50 5.0μ CMOS VCSP50L1 BU52051NVX 1.65～3.30 +/-3.0 ※ 0.9 50 5.0μ CMOS SSON004X1216 BU52011HFV 1.65～3.30 +/-3.0 ※ 0.9 50 5.0μ CMOS HVSOF5 BU52021HFV 2.40～3.60 +/-3.7 ※ 0.8 50 8.0μ CMOS HVSOF5
BU52025G 2.40～3.60 +/-3.7 ※ 0.8 50 8.0μ CMOS SSOP5
BD7411G 4.50～5.50 +/-3.4 ※ 0.4 - 2.0m CMOS SSOP5
※Plus is expressed on the S-pole; minus on the N-pole
voltage
(V)
Operate
point (mT)
Hysteresis
(mT)
Period
(ms)
Supply current
(AVG)
(A)
Output
type
Package
June 2008
REV. H
●Absolute Maximum Ratings
BU52001GUL (Ta=25℃) BU52015GUL (Ta=25℃)
PARAMETERS SYMBOL LIMIT UNIT PARAMETERS SYMBOL LIMIT UNIT
1
±1
420
※
V
mA
2
※
mW
Power Supply Voltage Output Current Power Dissipation Pd Operating Temperature Range T Storage Temperature Range T
※3. Not to exceed Pd ※4. Reduced by 4.20mW for each increase in Ta of 1℃ over 25℃
（mounted on 50mm×58mm Glass-epoxy PCB）
Power Supply Voltage Output Current
V I
DD
OUT
-0.1～+4.5
Power Dissipation Pd Operating Temperature Range T Storage Temperature Range T
※1. Not to exceed Pd ※2. Reduced by 4.20mW for each increase in Ta of 1℃ over 25℃
（mounted on 50mm×58mm Glass-epoxy PCB）
opr
stg
-40～+85 ℃
-40～+125 ℃
BU52051NVX (Ta=25℃) BU52011HFV (Ta=25℃)
PARAMETERS SYMBOL LIMIT UNIT PARAMETERS SYMBOL LIMIT UNIT
5
±0.5
2049
※
V
mA
6
※
mW
Power Supply Voltage Output Current Power Dissipation Pd Operating Temperature Range T Storage Temperature Range T
※7. Not to exceed Pd ※8. Reduced by 5.36mW for each increase in Ta of 1℃ over 25℃
（mounted on 70mm×70 mm×1.6mm Glass-epoxy PCB）
Power Supply Voltage Output Current
V I
DD
OUT
-0.1～+4.5
Power Dissipation Pd Operating Temperature Range T Storage Temperature Range T
※5. Not to exceed Pd ※6. Reduced by 20.49mW for each increase in Ta of 1℃ over 25℃
（mounted on 70mm×70 mm×1.6mm Glass-epoxy PCB）
opr
stg
-40～+85 ℃
-40～+125 ℃
BU52021NVX (Ta=25℃) BU52025G (Ta=25℃)
PARAMETERS SYMBOL LIMIT UNIT PARAMETERS SYMBOL LIMIT UNIT
9
Power Supply Voltage
V
DD
-0.1～+4.5
※
V
Power Supply Voltage
VDD I
OUT
opr
stg
VDD I
OUT
opr
stg
VDD
-0.1～+4.5
-40～+85 ℃
-40～+125 ℃
-0.1～+4.5
-40～+85 ℃
-40～+125 ℃
-0.1～+4.5
±0.5
420
±0.5
536
11
3
※
V
mA
4
※
mW
7
※
V
mA
8
※
mW
※
V
I
Output Current
OUT
Power Dissipation Pd Operating Temperature Range T
※9. Not to exceed Pd
Storage Temperature Range T
※10. Reduced by5.36mW for each increase in Ta of 1℃ over 25℃
（mounted on 70mm×70 mm×1.6mm Glass-epoxy PCB）
opr
stg
±1
10
※
536
-40～+85 ℃
-40～+125 ℃
mA
mW
Output Current Power Dissipation Pd Operating Temperature Range T Storage Temperature Range T
※11. Not to exceed Pd ※12. Reduced by 5.40mW for each increase in Ta of 1℃ over 25℃
（mounted on 70mm×70 mm×1.6mm Glass-epoxy PCB）
BD7411G (Ta=25℃)
PARAMETERS SYMBOL LIMIT UNIT
13
Power Supply Voltage Output Current
V I
OUT
Power Dissipation Pd Operating Temperature Range T Storage Temperature Range T
-0.3～+7.0
-55～+150 ℃
DD
opr
stg
※
±1
14
※
540
-40～+85 ℃
※13. Not to exceed Pd ※14. Reduced by 5.40mW for each increase in Ta of 1℃ over 25℃
（mounted on 70mm×70 mm
×1.6mm Glass-epoxy PCB）
mA
mW
V
I
OUT
opr
stg
-40～+85 ℃
-40～+125 ℃
540
±1
mA
12
※
mW
2/20
●Magnetic, Electrical Characteristics
BU52001GUL (Unless otherwise specified, V
PARAMETERS SYMBOL
Power Supply Voltage Operate Point
Release Point
Hysteresis
2.4 3.0 3.3 V
V
DD
B
- 3.7 5.5
opS
B
opN
0.8 2.9 -
B
rpS
B
rpN
B
hysS
B
hysN
＝3.0V, Ta＝25℃)
DD
LIMIT
MIN TYP MAX
-5.5 -3.7 -
- -2.9 -0.8
- 0.8 -
- 0.8 -
UNIT CONDITIONS
mT
mT
mT
Period Tp - 50 100 ms
V
Output High Volｔage VOH
DD
-0.4
- - V
Output Low Voltage VOL - - 0.4 V Supply Current I
Supply Current During Startup Time Supply Current During Standby Time
- 8 12 μA Average
DD(AVG)
- 4.7 - mA During Startup Time Value
DD(EN)
- 3.8 - μA During Standby Time Value
DD(DIS)
B
<B<B
rpN
=-1.0mA
OUT
B<B
opN,BopS
=+1.0mA
OUT
※15
rpS
<B ※15
※15 B = Magnetic flux density
1mT=10Gauss Positive (“+”) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor.
After applying power supply, it takes one cycle of period (TP) to become definite output. Radiation hardiness is not designed.
3/20
V
BU52015GUL (Unless otherwise specified,
PARAMETERS SYMBOL
＝1.80V, Ta＝25℃)
DD
LIMIT
MIN TYP MAX
UNIT CONDITIONS
Power Supply Voltage VDD 1.65 1.80 3.30 V
B
Operate Point
Release Point
- 3.0 5.0
opS
mT
B
-5.0 -3.0 -
opN
B
0.6 2.1 -
rpS
mT
B
- -2.1 -0.6
rpN
Hysteresis
B
hysS
- 0.9 ­mT
B
hysN
- 0.9 -
Period Tp - 50 100 ms
OUT1: B OUT2: B<B I
Output High Volｔage VOH
V
DD
-0.2
- - V
OUT1: B<B
Output Low Voltage VOL - - 0.2 V
OUT2: B
During Startup Time 1 Supply Current During Standby Time 1
Supply Current 2 I Supply Current
During Startup Time 2 Supply Current During Standby Time 2
DD1(AVG)
DD1(EN)
DD1(DIS)
DD2(AVG)
DD2(EN)
DD2(DIS)
- 5 8 μA VDD=1.8V , Average
- 2.8 - mA
- 1.8 - μA
VDD=1.8V,
During Startup Time Value
VDD=1.8V,
During Standby Time Value
- 8 12 μA VDD=2.7V , Average
- 4.5 - mA
- 4.0 - μA
VDD=2.7V,
During Startup Time Value
V
During Standby Time Value
OUT
OUT
DD
=2.7V,
<B<B
rpN
opN
= -0.5mA
opN
<B<B
rpN
= +0.5mA
, B
, B
rpS
opS
opS
rpS
※16 B = Magnetic flux density
1mT=10Gauss Positive (“+”) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor. After applying power supply, it takes one cycle of period (T
) to become definite output.
P
Radiation hardiness is not designed.
※16
<B
<B ※16
4/20
BU52051NVX , BU52011HFV (Unless otherwise specified, V
LIMIT
PARAMETERS SYMBOL
MIN TYP MAX
＝1.80V, Ta＝25℃)
DD
UNIT CONDITIONS
Power Supply Voltage VDD 1.65 1.80 3.30 V
Operate Point
Release Point
Hysteresis
opS
B
-5.0 -3.0 -
opN
B
0.6 2.1 -
rpS
B
- -2.1 -0.6
rpN
B
- 0.9 -
hysS
B
- 0.9 -
hysN
mT
mT
mT
- 3.0 5.0
B
Period Tp - 50 100 ms Output High Volｔage VOH
DD
-0.2
- - V
V
Output Low Voltage VOL - - 0.2 V Supply Current 1 I
Supply Current During Startup Time 1 Supply Current During Standby Time 1
Supply Current 2 I Supply Current
During Startup Time 2 Supply Current During Standby Time 2
DD1(AVG)
DD1(EN)
DD1(DIS)
DD2(AVG)
DD2(EN)
DD2(DIS)
- 5 8 μA VDD=1.8V , Average
-
-
-
-
2.8
1.8
-
8
4.5
4.0
- mA
- μA
12 μA VDD=2.7V , Average
- mA
- μA
B
<B<B
rpN
=-0.5mA
OUT
B<B
opN
=+0.5mA
OUT
V
=1.8V,
DD
※17
rpS
, B
<B ※17
opS
During Startup Time Value VDD=1.8V, During Standby Time Value
VDD=2.7V, During Startup Time Value V
=2.7V,
DD
During Standby Time Value
BU52021HFV,BU52025G (Unless otherwise specified, V
PARAMETERS SYMBOL
MIN TYP MAX
＝3.0V, Ta＝25℃)
DD
LIMIT
UNIT CONDITIONS
Power Supply Voltage VDD 2.4 3.0 3.6 V Operate Point
Release Point
Hysteresis
- 3.7 5.5
opS
B
-5.5 -3.7 -
opN
B
0.8 2.9 -
rpS
B
- -2.9 -0.8
rpN
B
hysS
B
hysN
- 0.8 -
- 0.8 -
mT
mT
mT
B
Period Tp - 50 100 ms
Output High Volｔage VOH
DD
-0.4
- - V
V
Output Low Voltage VOL - - 0.4 V
Supply Current Supply Current
During Startup Time Supply Current During Standby Time
DD(AVG)
-
DD(EN)
-
DD(DIS)
-
8
4.7
3.8
12 μA Average
- mA During Startup Time Value
- μA During Standby Time Value
B
<B<B
rpN
=-1.0mA
OUT
B<B
opN
=+1.0mA
OUT
※17
rpS
, B
<B ※17
opS
※17 B = Magnetic flux density
1mT=10Gauss Positive (“+”) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor. After applying power supply, it takes one cycle of period (TP) to become definite output. Radiation hardiness is not designed.
5/20
BD7411G (Unless otherwise specified, V
PARAMETERS SYMBOL
Power Supply Voltage VDD
B
Operate Point
Release Point
Hysteresis
opS
B
opN
B
rpS
B
rpN
B
hysS
B
hysN
Output High Volｔage VOH
Output Low Voltage VOL
Supply Current IDD
＝5.0V, Ta＝25℃)
DD
LIMIT
MIN TYP MAX
4.5 5.0 5.5
- 3.4 5.6
-5.6 -3.4 -
1.5 3.0 -
- -3.0 -1.5
- 0.4 -
- 0.4 -
4.6
- - 0.4
- 2 4
- -
UNIT CONDITIONS
V
mT
mT
mT
V
V
B
<B<B
rpN
=-1.0mA
OUT
B<B
opN
=+1.0mA
OUT
, B
※18
rpS
<B ※18
opS
mA
※18 B = Magnetic flux density
1mT=10Gauss Positive (“+”) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor. Radiation hardiness is not designed.
6/20
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