Rohm BM60052FV-C, BM60052FV-EVK-001 User Manual

BM60052FV-C Evaluation Board

(For 300 A/1200 V Full-SiC Power Module Drive)

BM60052FV-EVK-001

1-1. Overview

BM60052FV-EVK-001 (BM60052FV-C Evaluation Board) is an evaluation board whose shape allows direct mounting onto the ROHM’s 2ch 300 A/1200 V class full-SiC power module, BSM300D12P2E001. This is a single unit, comprising the SiC-MOSFET gate drive circuit along with the gate driver IC, the BM60052FV-C integrating insulation element, and an insulated DC-DC converter, supplying gate voltage. The constant is set to the value suitable for driving BSM300D12P2E001. Integrated functions include SiC-MOSFET’s DESAT detection function, soft turn-off function at DESAT detection, DESAT detection FLT signal output function, gate bias voltage reduction detection/gate state monitoring RDY signal output function, and mirror clamp function. This evaluation board is intended to be used with BM60052FV-C to drive the full-SiC power module for evaluation. However, it is not designed for mass-production use.

1-2. Schematic of the board

[BM60052FV-EVK-001]

Reference: [Full-SiC Power Module BSM300D12P2E001]: To be purchased separately

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Datasheet

BM60052FV-EVK-001

Datasheet

2-1. Performance specifications (Ta=25°C. These are typical values and do not guarantee the characteristics of the

evaluation board.)

Power voltage

Power current

Number of drive circuits 2

Range of input signal frequency DC ~ 100 kHz

Minimum input ON pulse width 1.0 µs * 6

Minimum input OFF pulse width 1.0 µs

Input signal 5V 0-P

Maximum gate drive charge 1500 nC * 1, * 2 Output forward bias voltage (+Vg) +17 V ~ +19 V * 1 Output reverse bias voltage (-Vg) -3 V ~ -5 V * 1 Gate forward direction bias current (+Ig) +7.5 A max (Prw  0.5 µs) * 1, * 2

Characteristic item Standard/Rating Remarks

12 VDC ~ 28 VDC (15 V typ., 24 V typ.) between Pin1 and Pin2

0.8 A (power voltage 15 VDC)

0.5 A (power voltage 24 VDC)

* 1

Gate drawing current (-Ig) -8.5 A max (Pfw  0.5 µs) * 1, * 2 Rise response delay time (+Tstg) 100 ns typ. * 1, * 3 Fall response delay time (-Tstg) 100 ns typ. * 1, * 4 Rise time (Tr) 100 ns typ. * 1, * 5 Fall time (Tf) 100 ns typ. * 1, * 5

Withstand voltage For one minute at AC 2500 V (between input and output)

Repeatedly peak voltage

1200V voltage betweenTH7 and TH8, voltage between TH8 and TH8

Insulation resistance 100 m or more at DC 500 V (between input and output)

DESAT detection voltage 4.0 V (min)

Operating temperature range -40 ~ +70ºC

Storage temperature range -40 ~ +80ºC

Operating humidity range 30% to 90% RH (No dew-condensation)

* 1 Vin: 15 V, 24 V; Load: Dummy load equivalent to BSM300D12P2E001, i.e., 1.6  + 0.083 µf; f: 100 kHz and Duty

cycle: 50%

* 2 A gate resistance (RG) of 0.2  is inserted in the circuit for SiC-MOSFET gate driver as shown in the following

figure.

Gate driver

ゲートドライバー

RG= 0.2 Ω

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BM60052FV-EVK-001

* 3 +Tstg: The time from the rise of input signals until reaching 10% of the output gate signal peak value. * 4 -Tstg: The time from the fall of input signals until reaching 90% of the output gate signal peak value. * 5 Tr, Tf: The time taken for the transition between 10% and 90% of the output gate signal peak value.

* 6 About 1 µs is defined for DESAT detection suppression after the gate rise.

2-2. Definition of output parameters

(1) At steady output (2) At DESAT detection

Datasheet

Input signal

Output signal

Gate current

Input signal

Output si

nal

Short-circuit detection suppression time 1 s typ

Soft turn-off

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BM60052FV-EVK-001

Datasheet

3. Operating procedures

(1) Place BM60052FV-EVK-001 on the full-SiC power module and make sure that the seven pins are correctly located.

(See the red solid lines in the following figure) (2) Fix BM60052FV-EVK-001 using self-tap screws. (See the blue dotted lines in the following figure) (3) Solder the seven pins for electrical connection.

[BM60052FC-EVK-001]

[BSM300D12P2E001]

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BM60052FV-EVK-001

4-1. Block diagram (check pin configuration)

Stabilizing

circuit

To e ach

circuit

Datasheet

converter

Short-circuit

detection circuit

UVLO circuit

To e ach

circuit

Gate drive circuit

To e ach

circuit

Gate state monitoring and soft turn-off circuit

Mirror clamp

circuit

Upper arm side

Connector

4-2. Description of check pins

CH15A SiC power module Upper arm drain voltage

CH11A Upper arm DC-DC converter Secondary +18 V

CH12A Upper arm DC-DC converter Secondary-4 V

CH11B Lower arm DC-DC converter Secondary +18 V

Stabilizing

To e ach

CH13A SiC power module Upper arm gate voltage

circuit

converter

Short-circuit

detection circuit

UVLO circuit

To e ach

circuit

Gate drive circuit

To e ach

circuit

Gate state monitoring

and soft turn-off circuit

Mirror clamp

circuit

Lower arm side

Connection side

with power module

CH14A SiC power module Upper arm source voltage Lower arm drain voltage Upper arm DC-DC converter secondary GND

CH2A Upper arm DC-DC converter Main FET drain voltage

CH1A Primary GND

CH2B Lower arm DC-DC converter Main FET drain voltage

CH12B Lower arm DC-DC converter Secondary-4 V

CH14B SiC power module Lower arm source voltage Lower arm DC-DC converter secondary GND

CH13B SiC power module Lower arm gate voltage

CH1B Primary GND

* Yellow: Primary, Red: Secondary upper arm side, Blue: Secondary lower arm side

The oscilloscope power supply should be floating. When measuring circuits with different GND potentials simultaneously, use a differential probe or other device to prevent ground fault or short circuit in the oscilloscope’s GND terminal.

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BM60052FV-EVK-001

5-1. Through-hole pin layout, connector layout

5-2. Names of input/output terminals

Power supply, signal input/output: HIF3BA-14PA-2.54DSA (71) (Hirose Electric) (Connector side: CN 1-14)

TH [7] TH [8] [9]

Signal name

VDD

Description TH

Input power (+12 V ~+28 V)

TH [10] [11]

TH [6] [5]

Gate source output, drain input: 2.0 mm through hole (Connection side with power module: upper figure [5] to [11])

Signal name

S-B

Description

B ch source output

Datasheet

Connector (CN)

14 13 12 11 10 9

8 7 6 5 4 3 2 1

A_XXX: A ch-related upper arm control-associated terminal B_XXX: B ch-related lower arm control-associated terminal

GND B_INA B_INB B_ENA B_FLT B_RDY A_INA A_INB A_ENA A_FLT A_RDY TH2 TH1

Input power (GND) 6

B ch input signal A 7

B ch input signal B 8

B ch enable signal

B ch short circuit detection output

B ch UVLO, gate state monitoring output

A ch input signal A 11

A ch input signal B X_A: Element-related terminal for upper arm

A ch enable signal X_B: Element-related terminal for lower arm

A ch short-circuit detection output

A ch UVLO, gate state monitoring output

Thermistor terminal 11 (not used)

Thermistor terminal 10 (not used)

G-B D-A S-A /D-B

For the thermistor terminals, TH1 and TH2 are only connected to each other on the substrate, and not to the IC.

G-A TH1 TH2

B ch gate output

A ch drain input

A ch source output

and B ch drain input

A ch gate output

Thermistor terminal 10 (not used)

Thermistor terminal 11 (not used)

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BM60052FV-EVK-001

5-3. Fitting connectors

Hirose Electric Omron

Flat cable pressure welding-type

HIF3BA-14D-2.54R XG4M-1430-T

Datasheet

connector Loose-wire crimp-type connector HIF3BA-14D-2.54C XG5N-141 Contact for loose wires HIF3-2226SC(AWG22~AWG26) XG5W-0231(AWG22~26)

HIF3-2428SC(AWG24~AWG28) XG5W-0232(AWG24~28)

Note: For details, refer to the manufacturer’s catalog.

6. Selection of gate resistance

The gate resistance of this product is 0.2 , which is a standard level for BSM300D12P2E001. This can be changed to an optimum value according to your equipment. Make the required adjustment by paying attention to the operation and heat generation in each part.

Upper/

lower arms

Upper arm

side

Lower arm

side

Rise

5-parallel

connection

Fall

5-parallel

connection

Rise

5-parallel

connection

Fall

5-parallel

connection

Circuit symbol Substrate pattern layout/Implementation status

RG1A1 Square shape chip resistor MCR100 (1 W_0.2 J,

ROHM): Implemented RG1A2 RG1A3 RG1A4 RG1A5

RG2A1 Square shape chip resistor MCR100 (1 W_0.2 J,

RG2A2 RG2A3 RG2A4 RG2A5

RG1B1 Square shape chip resistor MCR100 (1 W_0.2 J,

RG1B2 RG1B3 RG1B4 RG1B5

RG2B1 Square shape chip resistor MCR100 (1 W_0.2 J,

RG2B2 RG2B3 RG2B4 RG2B5

Square shape chip resistor MCR100 (1 W, ROHM): Not

implemented

Through-hole diameter φ1.2 mm and pitch 25.4 mm: Not

implemented

ROHM): Implemented

Square shape chip resistor MCR100 (1 W, ROHM): Not

implemented

Through-hole diameter φ1.2 mm and pitch 25.4 mm: Not

implemented

ROHM): Implemented

Square shape chip resistor MCR100 (1 W, ROHM): Not

implemented

Through-hole diameter φ1.2 mm and pitch 25.4mm: Not

implemented

ROHM): Implemented

Square shape chip resistor MCR100 (1 W, ROHM): Not

implemented

Through-hole diameter φ1.2 mm and pitch 25.4 mm: Not

implemented

RG2A1 ~ RG2A5 Upper arm fall side 5-parallel connection

RG1A1 ~ RG1A5 Upper arm rise side 5-parallel connection

RG2B1 ~ RG2B5 Upper arm fall side 5-parallel connection

RG1B1 ~ RG1B5 Lower arm rise side 5-parallel connection

 The recommended minimum gate resistance value is 0.2 .  Increasing the gate resistance value will increase switching loss of the SiC power module, which may adversely affect

the expected performance. Thus, a gate resistance as small as possible should be chosen.

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BM60052FV-EVK-001

7. Description of each function

 Input signal and enable signal, determine the output logic.

CN10: A_ENA

CN5: B_ENA

L x x L

H H x L

H L L L

H L H H

Logic H and L level input voltages are in the range 2.0 V ~ 5.5 V and 0 ~ 0.8 V, repectively.

CN9: A_INB CN4: B_INB

CN8: A_INA CN3: B_INA

Datasheet

TH[9]: G-A (gate output) TH[6]: G-B (gate output)

CH1 (yellow, 2.0 V/div): INA CH2 (light blue, 2.0 V/div): INB CH3 (pink, 5.0 V/div): Gate output

t: 2 µs/div

 DESAT detection, FLT signal output (A_FLT, B_FLT)

When the gate output is high and SiC-MOSFET's Vds is 4V or more, the gate voltage is lowered (soft turn-off) and FLT

signals (8-pin) are output. (0 V at detection and 4 V at steady state). This operation is cleared at the rise of input signal ENA. The FLT terminal is pulled up with the VREG terminal on the evaluation substrate at 10 k.

 A detection suppression time of about 1 µs is defined after the gate rise.  For details of the DESAT detection function, refer to the data sheet of BM60052FV-C.

 Gate bias voltage reduction detection (UVLO), gate state monitoring, RDY signal output (A_RDY, B_RDY)

When the gate bias voltage approximate 18V is decreased to approximate14V because of abnormalities such as gate output short-circuit and an output over current, or the gate state monitoring finds an inconsistency between the input and output, a RDY signal will be output (0 V at detection and 4 V at steady state). When the power voltage increases to the voltage reduction detection level, the operation returns to the steady state. The RDY terminal is pulled up with the VREG terminal on the evaluation substrate at 10 k.

 Gate state monitoring filter time: 1.5 µs ~ 2.5 µs

 Mirror clamp function

While the gate output is low, when the OUT2 terminal falls below a certain voltage level, the mirror clamp function starts operating. Also, it starts operating at DESAT detection.

 Mirror clamp detection voltage: 1.8 V ~ 2.2 V (between G and S)  For details of the mirror clamp function, refer to the data sheet of BM60052FV-C.

 Thermal protection function

BM60052FV-C has temperature sensor voltage input terminals and integrates the thermal protection function. However, these are set up as unavailable for this evaluation board. (The connection hole of the module is connected to the connector and not to BM60052FV-C.)

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BM60052FV-EVK-001

7. Outline drawing



58.4

7.25

30 .11

33.9

100

94.5

87.26

83.45

6 0.58

56.77

8 9 10 11

Datasheet

CN1:

H IF3BA- 14PA-2.54D SA1

57.5

1.6 TBD

Unit (mm)

(mm)

単位

Tolerance 1 mm

1mm

公差±

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■<High Voltage Safety Precautions>

◇ Read all safety precautions before use Please note that this document covers only the BM60052FV-C evaluation board

(BM60052FV-EVK-001) and its functions. For additional information, please refer to the datasheet.

To ensure safe operation, please carefully read all precautions before handling the evaluation board

Depending on the configuration of the board and voltages used,

Potentially lethal voltages may be generated.

Therefore, please make sure to read and observe all safety precautions described in the red box below.

Notice

Before Use

[1] Verify that the parts/components are not damaged or missing (i.e. due to the drops). [2] Check that there are no conductive foreign objects on the board. [3] Be careful when performing soldering on the module and/or evaluation board to ensure

that solder splash does not occur.

[4] Check that there is no condensation or water droplets on the circuit board.

During Use

[5] Be careful to not allow conductive objects to come into contact with the board.

[6] Brief accidental contact or even bringing your hand close to the board may result

in discharge and lead to severe injury or death.

Therefore, DO NOT touch the board with your bare hands or bring them too close to the board.

In addition, as mentioned above please exercise extreme caution when using conductive tools such as tweezers and screwdrivers.

[7] Please proceed carefully, taking note of any condensation when operating at low

temperatures or discoloration/leakage of the parts/board due to excessive heat.

[8] Be sure to wear insulated gloves when handling is required during operation.

After Use

[9] Even after the power has been turned off, please note that burns can still occur due to

contact with superheated parts or electric shock caused by charge stored in the capacitor.

[10] Protect against electric shocks by wearing insulated gloves when handling.

This evaluation board is intended for use only in research and development facilities and should by handled

only by qualified personnel familiar with all safety and

operating procedures.

We recommend carrying out operation in a safe environment that includes the use of high voltage signage at all entrances, safety interlocks, and protective glasses.

Notes

The information contained herein is subject to change without notice.

Before you use our Products, please contact our sales representative and verify the latest specifications :

Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.

Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.

The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document.

The Products specified in this document are not designed to be radiation tolerant.

For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems.

Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters.

10)

ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein.

11)

ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.

12)

Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.

13)

When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.

14)

This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.

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Rohm BM60052FV-C, BM60052FV-EVK-001 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual