Datasheet
2
22.May.2013 Rev.004
www.rohm.com
C
RL
RST
Micro
CT C
Micro
TOP VIEW
V
OUT
VDD
GND N.C. C
T
Voltage Detector IC Series
Free Delay Time Setting
CMOS Voltage Detector IC Series
BD52Exxx series BD53Exxx series
●General Description
Rohm's BD52Exxx and BD53Exxx series are highly
accurate, low current consumption Voltage Detector
ICs with a capacitor controlled time delay. The line up
includes BD52Exxx devices with N-channel open drain
output and BD53Exxx devices with CMOS output. The
devices are available for specific detection voltages
ranging from 2.3V to 6.0V in increments of 0.1V.
●Features
Delay Time Controlled by external Capacitor
Two output types (N-channel open drain and CMOS
output)
Ultra-low current consumption
Very small, lightweight and thin package
Package SSOP5 is similar to SOT-23-5(JEDEC)
●Typical Application Circuit
V
DD1
V
C
T
BD52Exxx
Open Drain Output type
BD52Exxx Series
L
(Capacitor for
noise filtering)
controller
GND
●Connection Diagram
SSOP5
Marking
Lot. No
●Pin Descriptions
SSOP5
PIN No. Symbol Function
1 VOUT Reset Output
2 VDD Power Supply Voltage
3 GND GND
4 N.C. Unconnected Terminal
5 CT
Capacitor connection terminal for
output delay time
●Key Specifications
Detection voltage: 2.3V to 6.0V (Typ.)
0.1V steps
High accuracy detection voltage: ±1.0%
Ultra-low current consumption: 0.95µA (Typ.)
●Package
SSOP5: 2.90mm x 2.80mm x 1.25mm
●Applications
Circuits using microcontrollers or logic circuits that
require a reset.
DD2
VDD1
GND
BD53Exxx
CMOS Output type
BD53Exxx Series
(Capacitor for
noise filtering)
RST
controller
L
○Product structure：Silicon monolithic integrated circuit ○This product is not designed for protection against radioactive rays
.
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Datasheet
BD52Exxx series BD53Exxx series
2
22.May.2013 Rev.004
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Output Type
Open Drain
CMOS
Detection
Voltage
Part Number
Part Number
6.0V
5.9V
Pg BD52E59
Uc
BD53E59
5.8V
Pf BD52E58
Ub
BD53E58
5.7V
Pe BD52E57
Ua
BD53E57
5.6V
Pd BD52E56
Ry
BD53E56
5.5V
Pc BD52E55
Rr
BD53E55
5.4V
Pb BD52E54
Rp
BD53E54
5.3V
Pa BD52E53
Rn
BD53E53
5.2V
Ny BD52E52
Rm
BD53E52
5.1V
Nr BD52E51
Rk
BD53E51
5.0V
Np BD52E50
Rh
BD53E50
4.9V
Nn BD52E49
Rg
BD53E49
4.8V
Nm BD52E48
Rf
BD53E48
4.7V
Nk BD52E47
Re
BD53E47
4.6V
Nh BD52E46
Rd
BD53E46
4.5V
Ng BD52E45
Rc
BD53E45
4.4V
Nf BD52E44
Rb
BD53E44
4.3V
Ne BD52E43
Ra
BD53E43
4.2V
Nd BD52E42
Qy
BD53E42
4.1V
Nc BD52E41
Qr
BD53E41
4.0V
Nb BD52E40
Qp
BD53E40
3.9V
Na BD52
E39 Qn BD53E39
3.8V
My BD52E38
Qm
BD53E38
3.7V
Mr BD52E37
Qk
BD53E37
3.6V
Mp BD52E36
Qh
BD53E36
3.5V
Mn BD52E35
Qg
BD53E35
3.4V
Mm BD52E34
Qf
BD53E34
3.3V
Mk BD52E33
Qe
BD53E33
3.2V
Mh BD52E32
Qd
BD53E32
3.1V
Mg BD52E31
Qc
BD53E31
3.0V
Mf BD52E30
Qb
BD53E30
2.9V
Me BD52E29
Qa
BD53E29
2.8V
Md BD52E28
Py
BD53E28
2.7V
Mc BD52E27
Pr
BD53E27
2.6V
Mb BD52E26
Pp
BD53E26
2.5V
Ma BD52E25
Pn
BD53E25
2.4V
Ly BD52E24
Pm
BD53E24
2.3V
Lr BD52E23
Pk
BD53E23
(Unit : mm)
SSOP5
2.9±0.2
0.13
4
°
+
6
°
−4
°
1.6
2.8±0.2
1.1±0.05
0.05±0.05
+0.2
−0.1
+0.05
−0.03
0.42
+0.05
−0.04
0.95
5
4
1 2
3
1.25Max.
0.2Min.
0.1
Direction of feed
Reel
∗
Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper right when you hold
reel on the left hand and you pull out the tape on the right hand
3000pcs
TR
( )
1pin
●Ordering Information
RE x x xB D x x - T
Part Output Type Reset Voltage Value Package Packaging and
Number 52 : Open Drain 23 : 2.3V G : SSOP5 forming specification
53 : CMOS 0.1V step TR : Embossed tape
60 : 6.0V and reel
●Lineup
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Datasheet
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2
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●Absolute maximum ratings
Parameter Symbol Limits Unit
Power Supply Voltage VDD-GND -0.3 to +10 V
Output Voltage
Nch Open Drain Output
CMOS Output GND-0.3 to VDD+0.3
V
OUT
Output Current Io 80 mA
Power
Dissipation
SSOP5
*1*2
Pd 540 mW
Operating Temperature Topr -40 to +105 °C
Ambient Storage Temperature Tstg -55 to +125 °C
*1 Reduced by 5.4mW/°C when used over 25°C.
*2 When mounted on ROHM standard circuit board (70mm×70mm×1.6mm, glass epoxy board).
●Electrical characteristics (Unless Otherwise Specified Ta=-40 to 105°C)
Parameter Symbol
VDD=HL, RL=470kΩ
Condition
*1
Ta=+25°C 2.475 2.5 2.525
VDET=2.5V
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C 2.970 3.0 3.030
VDET=3.0V
Ta=-40°C to 85°C
Ta=85°C to 105°C
Detection Voltage V
DET
VDET=3.3V
Ta=+25°C 3.267 3.3 3.333
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C 4.158 4.2 4.242
VDET=4.2V
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C 4.752 4.8 4.848
VDET=4.8V
Ta=-40°C to 85°C
Ta=85°C to 105°C
V
=2.3-3.1V - 0.80 2.40
DET
V
=3.2-4.2V - 0.85 2.55
Circuit Current when ON IDD1 VDD=VDET-0.2V
Circuit Current when OFF IDD2 VDD=VDET+2.0V
Operating Voltage Range VOPL
‘Low’ Output Voltage (Nch) VOL
‘High’ Output Voltage (Pch) VOH
VOL≤0.4V, Ta=25 to 105°C, RL=470kΩ 0.95 - VOL≤0.4V, Ta=-40 to 25°C, RL=470kΩ 1.20 - VDD=1.5V, I
VDD=2.4V, I
VDD=4.8V, I
VDD=8.0V, I
SINK
= 0.4 mA, VDET=2.3-6.0V - - 0.5
SINK
= 2.0 mA, VDET=2.7-6.0V - - 0.5
SOURCE
SOURCE
SOURCE
DET
V
=4.3-5.2V - 0.90 2.70
DET
V
=5.3-6.0V - 0.95 2.85
DET
V
=2.3-3.1V - 0.75 2.25
DET
V
=3.2-4.2V - 0.80 2.40
DET
V
=4.3-5.2V - 0.85 2.55
DET
V
=5.3-6.0V - 0.90 2.70
DET
=0.7 mA, VDET(2.3V to 4.2V)
=0.9 mA, VDET(4.3V to 5.2V)
=1.1 mA, VDET(5.3V to 6.0V)
VDET (T) : Standard Detection Voltage (2.3V to 6.0V, 0.1V step)
RL: Pull-up resistor to be connected between VOUT and power supply.
Design Guarantee. (Outgoing inspection is not done on all products.)
*1 Guarantee is Ta=25°C.
GND-0.3 to +10
Limit
Min. Typ. Max.
VDET(T)
×0.99
VDET(T)
2.418 - 2.584
2.404 - 2.597
2.901 - 3.100
2.885 - 3.117
3.191 - 3.410
3.173 - 3.428
4.061 - 4.341
4.039 - 4.364
4.641 - 4.961
4.616 - 4.987
VDD-0.5
VDD-0.5
VDD-0.5
- -
- -
- -
V
Unit
VDET(T)
×1.01
V
µA
µA
V
V
V VDD=6.0V, I
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Datasheet
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2
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●Electrical characteristics (Unless Otherwise Specified Ta=-40 to 105°C) - continued
Parameter Symbol
Leak Current when OFF I
VDD=VDS=10V
leak
VDD=VDET×1.1, VDET=2.3-2.6V, RL=470kΩ
VDD=VDET×1.1, VDET=2.7-4.2V, RL=470kΩ
Condition
*1
- - 0.1 µA
×0.30
×0.30
CT pin Threshold Voltage VCTH
VDD=VDET×1.1, VDET=4.3-5.2V, RL=470kΩ
VDD=VDET×1.1, VDET=5.3-6.0V, RL=470kΩ
Output Delay Resistance RCT VDD=VDET×1.1 VCT=0.5V
CT pin Output Current ICT
Detection Voltage
Temperature coefficient
VDET/∆T Ta=-40°C to 105°C - ±100 ±360 ppm/°C
VCT=0.1V VDD=0.95V
VCT=0.5V VDD=1.5V 150 240 -
Hysteresis Voltage ∆ VDET VDD=LHL, RL=470kΩ
×0.35
×0.40
*1
5.5 9 12.5 MΩ
*1
15 40 -
VDET
×0.03
VDET (T) : Standard Detection Voltage (2.3V to 6.0V, 0.1V step)
RL: Pull-up resistor to be connected between VOUT and power supply.
Design Guarantee. (Outgoing inspection is not done on all products.)
*1 Guarantee is Ta=25°C.
Limit Unit
Min. Typ. Max.
VDD
VDD
VDD
VDD
VDD
×0.40
VDD
×0.45
VDD
×0.50
VDD
×0.50
VDET
×0.05
VDD
×0.60
VDD
×0.60
VDD
×0.60
VDD
×0.60
µA
VDET
×0.08
V
V
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Datasheet
BD52Exxx series BD53Exxx series
2
22.May.2013 Rev.004
www.rohm.com
V
V
V
V
●Block Diagrams
Vref
Vref
DD
Figure.1 BD52Exxx Series
DD
Figure.2 BD53Exxx Series
GND
GND
OUT
CT
OUT
CT
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Datasheet
BD52Exxx series BD53Exxx series
2
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】
】
】
】
●Typical Performance Curves
2.0
BD5242G/FVE
【
【BD52E42G】
[µA]
DD
1.5
I
：
【BD53E42G】
18
[mA]
15
OL
I
：
12
BD5242G/FVE
【
【BD52E42G】
【BD53E42G】
VDD=2.4V
1.0
0.5
CIRCUIT CURRENT
0.0
0 1 2 3 4 5 6 7 8 9 10
VDD SUPPLY VOLTAGE ：VDD[V]
Figure.3 Circuit Current
45
BD5342G/FVE
【
40
[mA]
OH
I
35
：
30
25
20
15
10
5
0
"HIGH" OUTPUT CURRENT
0 1 2 3 4 5 6
DRAIN-SOURCE VOLTAGE ： VDS[V]
【BD53E42G】
VDD=8.0V
VDD=6.0V
VDD=4.8V
9
6
3
0
"LOW" OUTPUT CURRENT
0.0 0.5 1.0 1.5 2.0 2.5
DRAIN-SOURCE VOLTAGE ： VDS[V]
Figure.4 “Low” Output Current
9
BD5242G/FVE
【
8
[V]
7
OUT
V
：
6
【BD52E42G】
【BD53E42G】
5
4
3
Ta=25
2
OUTPUT VOLTAGE
1
Ta=25
℃
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
VDD SUPPLY VOLTAGE ：VDD[V]
VDD=1.2V
℃
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Figure.6 I/O Characteristics
TSZ02201-0R7R0G300080-1-
Datasheet
BD52Exxx series BD53Exxx series
2
22.May.2013 Rev.004
www.rohm.com
】
】～～
●Typical Performance Curves – continued
1.0
BD5242G/FVE
【BD52E42G】
[V]
0.8
OUT
V
：
【
【BD53E42G】
0.6
0.4
0.2
OUTPUT VOLTAGE
0.0
0.0 0.5 1.0 1.5 2.0 2.5
VDD SUPPLY VOLTAGE ： VDD[V]
Figure.7 Operating Limit Voltage
450
BD5242G/FVE
400
A]
µ
[
CT
350
I
：
300
【
【BD52E42G】
【BD53E42G】
】
250
200
150
100
50
CT OUTPUT CURRENT
0
0 1 2 3 4 5
VDD SUPPLY VOLTAGE ： VDD[V]
Figure.8 CT Terminal Current
5.6
BD5242G/FVE
【BD52E42G】
[V]
5.2
DET
V
：
4.8
Low to high(V
【
【BD53E42G】
DET
4.4
4.0
High to low(V
3.6
DETECTION VOLTAGE
3.2
-40 0 40 80
TEMPERATURE ： Ta[℃]
Figure.9 Detection Voltage
Release Voltage
+ΔV
DET
DET
1.5
[µA]
DD1
I
：
)
1.0
【BD52E42G】
BD5242G/FVE
【
【BD53E42G】
】
0.5
)
0.0
CIRCUIT CURRENT WHEN ON
-40 -20 0 20 40 60 80 100
TEMPERATURE ： Ta[℃]
Figure.10 Circuit Current when ON
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Datasheet
BD52Exxx series BD53Exxx series
2
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】
●Typical Performance Curves – continued
1.5
【BD52E42G】
BD5242G/FVE
[µA]
DD2
I
：
【
【BD53E42G】
1.0
0.5
CIRCUIT CURRENT WHEN OFF
0.0
-40 -20 0 20 40 60 80 100
TEMPERATURE ： Ta[℃]
Figure.11 Circuit Current when OFF
】
1.5
BD5242G/FVE
【BD52E42G】
[V]
OPL
V
：
【
【BD53E42G】
1.0
0.5
MINIMUM OPERATING VOLTAGE
0.0
-40 -20 0 20 40 60 80 100
TEMPERATURE ： Ta[℃]
Figure.12 Operating Limit Voltage
13
BD5242G/FVE
【BD52E42G】
12
[M]
11
CT
R
10
：
T
9
【
【BD53E42G】
8
7
6
5
RESISTANCE OF C
4
-40 -20 0 20 40 60 80 100
TEMPERATURE ： Ta[℃]
Figure.13 CT Terminal Circuit Resistance
】
10000
BD5242G/FVE
【
【BD52E42G】
1000
[ms]
PLH
100
t
：
10
1
DELAY TIME
0.1
0.0001 0.001 0.01 0.1
CAPACITANCE OF CT ： CCT[F]
Figure.14 Delay Time (t
【BD53E42G】
PLH
CT Terminal External Capacitance
】
) and
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Datasheet
BD52Exxx series BD53Exxx series
2
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www.rohm.com
1
2
3
4
5
R3Q3Q1
R3
③ ④
V
●Application Information
Explanation of Operation
For both the open drain type (Figure.15) and the CMOS output type (Figure.16), the detection and release voltages are
used as threshold voltages. When the voltage applied to the VDD pins reaches the applicable threshold voltage, the V
terminal voltage switches from either “High” to “Low” or from “Low” to “High”. Please refer to the Timing Waveform and
Electrical Characteristics for information on hysteresis. Because the BD52Exxx series uses an open drain output type, it is
necessary to connect a pull up resistor to VDD or another power supply if needed [The output “High” voltage (V
OUT
case becomes VDD or the voltage of the other power supply].
DD
V
R1
Vref
R2
VDD
DD
RL
RESET
OUT
V
V
R1
Vref
R2
Q3
DD
V
Q2
Q1
GND
CT
GND
CT
Figure.15 (BD52ExxxType Internal Block Diagram) Figure.16 (BD53ExxxType Internal Block Diagram)
Setting of Detector Delay Time
It is possible to set the delay time at the rise of VDD using a capacitor connected to the Ct terminal.
Delay time at the rise of VDD t
t
= -CCT×RCT×ln
PLH
：Time until Vout rises to 1/2 of VDD after VDD rises beyond the release voltage(V
PLH
VDD-V
CTH
V
DD
DET
CCT: CT pin External Capacitance
RCT: CT pin Internal Impedance（Please refer to Electrical Characteristics.）
V
: CT pin Threshold Voltage（Please refer to Electrical Characteristics.）
CTH
ln : Natural Logarithm
Reference Data of Falling Time (t
Examples of Falling Time (t
Part Number t
) Output
PHL
) Output
PHL
[µs] -40°C t
PHL
[µs] ,+25°C t
PHL
[µs],+105°C
PHL
BD52E27G 30.8 30 28.8
BD53E27G 26.8 26 24.8
*This data is for reference only.
The figures will vary with the application, so please confirm actual operating conditions before use.
Timing Waveforms
Example: the following shows the relationship between the input voltage VDD, the CT Terminal Voltage VCT and the output
voltage VOUT when the input power supply voltage VDD is made to sweep up and sweep down (The circuits are those in
Figure.15 and 16).
V
DD
V
DET
+ΔV
DET
V
DET
V
OPL
⑤
0V
CT
1/2 V
DD
When the power supply is turned on, the output is unstable
from after over the operating limit voltage (VOPL) until tPHL.
Therefore it is possible that the reset signal is not outputted when
the rise time of VDD is faster than tPHL.
When VDD is greater than VOPL but less than the reset release
voltage (VDET+VDET), the CT terminal (VCT) and output (VOUT)
voltages will switch to L.
If VDD exceeds the reset release voltage (VDET+VDET), then
VOUT switches from L to H (with a delay due to the CT terminal).
If VDD drops below the detection voltage (VDET) when the
power supply is powered down or when there is a power supply
V
OUT
t
PHL
t
PLH
t
PHL
t
PLH
fluctuation, VOUT switches to L (with a delay of tPHL).
The potential difference between the detection voltage and the
release voltage is known as the hysteresis width (VDET). The
system is designed such that the output does not toggle with
①
②
Figure.17 Timing Waveform
power supply fluctuations within this hysteresis width, preventing
malfunctions due to noise.
) in this
RESET
OUT
V
+V
DET
OUT
)
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RL
RST
RST
●Circuit Applications
1) Examples of a common power supply detection reset circuit
V
DD1
V
DD2
Application examples of BD52Exxx series (Open Drain
output type) and BD53Exxx series (CMOS output type)
are shown below.
BD52Exxx
C
T
C
L
（Noise-filtering
Capacitor）
Micro
controller
GND
CASE1: Power supply of the microcontroller (V
differs from the power supply of the reset detection
(V
).
DD1
Use an open drain output type (BD52Exxx) with a load
resistance R
attached as shown Figure.18.
L
Figure.18 Open Drain Output Type
CASE2: Power supply of the microcontroller (V
DD1
same as the power supply of the reset detection (V
V
DD1
Use a CMOS output type (BD53Exxx) device or open
drain output type (BD52Exxx) device with a pull up
GND
BD53Exxx
C
T
C
L
（Noise-filtering
Capacitor）
Micro
controller
When a capacitance CL for noise filtering is connected to
the V
pin (the reset signal input terminal of the
OUT
microcontroller), please take into account the waveform
of the rise and fall of the output voltage (V
Please refer to Operational Notes for recommendations
on resistor and capacitor values.
resistor attached between the output and V
Figure.19 CMOS Output Type
OUT
DD1
.
).
2) The following is an example of a circuit application in which an OR connection between two types of detection voltage
resets the microcontroller.
VDD1 VDD3
VDD2
RL
BD52Exxx
NO.1
BD52Exxx
NO.2
RST
CT
CT
microcontroller
Fig.20
GND
To reset the microcontroller when many independent power supplies are used in the system, OR connect an open drain
output type (BD52Exxx series) to the microcontroller’s input with pull-up resistor to the supply voltage of the microcontroller
) as shown in Fig. 20. By pulling-up to V
(V
DD3
, output “High” voltage of micro-controller power supply is possible.
DD3
DD2
) is the
).
DD1
)
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R2
R1
V1
3) Examples of the power supply with resistor dividers
In applications wherein the power supply voltage of an IC comes from a resistor divider circuit, an in-rush current will flow
into the circuit when the output level switches from “High” to “Low” or vice versa. In-rush current is a sudden surge of
current that flows from the power supply (VDD) to ground (GND) as the output logic changes its state. This current flow
may cause malfunction in the systems operation such as output oscillations, etc.
Figure.21
IDD
I1
CIN
VDD
BD52Exxx
BD53Exxx
VOUT
Through
Current
CL
GND
0
VDET
When an in-rush current (I1) flows into the circuit (Refer to Fig. 21) at the time when output switches from “Low” to “High”,
a voltage drop of I1×R2 (input resistor) will occur in the circuit causing the VDD supply voltage to decrease. When the VDD
voltage drops below the detection voltage, the output will switch from “High” to “Low”. While the output voltage is at “Low”
condition, in-rush current will stop flowing and the voltage drop will be reduced. As a result, the output voltage will switches
again from “Low” to “High” which causes an in-rush current and a voltage drop. This operation repeats and will result to
oscillation.
V D D - ID D P eak C urrent T a=25°C
10
B D 52Exxx
1
B D 53Exxx
0.1
ID D -peak[m A ]
0.01
0.001
3 4 5 6 7 8 9 10
V D D[V ]
Figure.22 IDD Peak Current vs. Power Supply Voltage
This data is for reference only.
*
The figures will vary with the application, so please confirm actual operating conditions before use.
DD
V
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Datasheet
BD52Exxx series BD53Exxx series
2
22.May.2013 Rev.004
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●
●Operational Notes
●●
1) Absolute maximum ratings
Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit
between pins or an open circuit between pins. Therefore, it is important to consider circuit protection measures, such
as adding a fuse, in case the IC is operated over the absolute maximum ratings.
2) Ground Voltage
The voltage of the ground pin must be the lowest voltage of all pins of the IC at all operating conditions. Ensure that no
pins are at a voltage below the ground pin at any time, even during transient condition.
3) Recommended operating conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
4) Bypass Capacitor for Noise Rejection
To help reject noise, put a 1µF capacitor between V
Be careful when using extremely big capacitor as transient response will be affected.
5) Short between pins and mounting errors
Be careful when mounting the IC on printed circuit boards. The IC may be damaged if it is mounted in a wrong
orientation or if pins are shorted together. Short circuit may be caused by conductive particles caught between the pins.
6) Operation under strong electromagnetic field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
7) The VDD line impedance might cause oscillation because of the detection current.
8) A VDD to GND capacitor (as close connection as possible) should be used in high VDD line impedance condition.
9) Lower than the mininum input voltage puts the VOUT in high impedance state, and it must be VDD in pull up (VDD)
condition.
10) External parameters
The recommended value of RL Resistor is 50k to 1M. The recommended value of CT Capacitor is over 100pF to
0.1µF. There are many factors (board layout, etc) that can affect characteristics. Please verify and confirm using
practical applications.
11) Power on reset operation
Please note that the power on reset output varies with the VDD rise time. Please verify the behavior in the actual
operation.
12) Testing on application boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should
always be turned off completely before connecting or removing it from the test setup during the inspection process. To
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and
storage.
13) Rush current
When power is first supplied to the IC, rush current may flow instantaneously. It is possible that the charge current to
the parasitic capacitance of internal photo diode or the internal logic may be unstable. Therefore, give special
consideration to power coupling capacitance, power wiring, width of GND wiring, and routing of connections.
pin discharge
14) C
T
Due to the capabilities of the CT pin discharge transistor, the CT pin may not completely discharge when a short input
pulse is applied, and in this case the delay time may not be controlled. Please verify the actual operation.
DD pin and GND and 1000pF capacitor between VOUT pin and GND.
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Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
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(Note1) Medical Equipment Classification of the Specific Applications
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CLASSⅣ CLASSⅢ
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(Note 1)
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H
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Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
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2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
2,
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1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
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[d] the Products are exposed to high Electrostatic
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